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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
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Silicon NPN Power Transistors
TELEPHONE: (973) 376-2922 (212)227-6005
BUS14
DESCRIPTION
•With TO-3 package
•High voltage ,high speed
APPLICATIONS
•Converters
•Inverters
•Switching regulators
•Motor controls
PINNING (See Fig.2)
PIN 1 2 3
DESCRIPTION Base
Emitter Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
VCBO VGEO
VEBO
Ic
I CM
IB IBM PT Tj Tstg
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current
Base current-Peak Total power dissipation Junction temperature Storage temperature
CONDITIONS Open emitter
Open base Open collector
Tmb=25
MAX 850 400 9 30 50 6 10 250 200 -65-200
UNIT V V V A A A A W
THERMAL CHARACTERISTICS SYMBOL
Rthj-mb
PARAMETER Thermal resistance from junction to mounting base
VALUE 0.7
UNIT /W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon NPN Power Transistors BUS14
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL
VcEO(SUS)
VcE(sat)
VsE(sat)
ICES
IEBO
(IRE
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
lc=0.1A; IB=0; L=25mH
IC=20A; IB=4A
lc=20A; IB=4A
VcE=RatedBVcEo; VBE=0 Tc=125
VEB=9V; lc=0
lc=2A ; VCE=5V
MIN
400
15
TYP. MAX
1.5
1.7
1 5
10
50
UNIT
V
V
V
mA
mA
Switching times
ton
ts
tf
Turn-on time
Storage time
Fall time
lc=20A; IB1=- IB2=4A
1.0
4.0
0.8 us
us
us
Silicon NPN Power Transistors BUS14
'ACKAGE OUTLINE
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utline dimensions
