BCR112
Jul-16-2001 1
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor (R1=4.7k, R2=4.7k)
1
2 3
VPS05161
EHA07184
3
2 1
C
E B
R1
R2
Type Marking Pin Configuration Package
BCR112 WFs 1 = B 2 = E 3 = C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 50 V
VCBO 50 Collector-base voltage
Emitter-base voltage VEBO 10
Input on Voltage Vi(on) 15
100 mA
IC DC collector current
Total power dissipation, TS = 102 °C Ptot 200 mW
Junction temperature Tj 150 °C
-65 ... 150
Storage temperature Tstg
Thermal Resistance
Junction - soldering point1) RthJS 240 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BCR112
Jul-16-2001 2
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter Symbol Values Unit
typ. max.
min.
DC Characteristics
- V
50 -
V(BR)CEO Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
50 -
V(BR)CBO Collector-base breakdown voltage
IC = 10 µA, IB = 0
-
- Collector cutoff current
VCB = 40 V, IE = 0
ICBO - 100 nA
- - mA
Emitter cutoff current VEB = 10 V, IC = 0
IEBO 1.61
20 - - -
DC current gain 1) IC = 5 mA, VCE = 5 V
hFE
VCEsat - - 0.3 V
Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA
0.8 Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off) - 1.5 V
1 -
Input on Voltage IC = 2 mA, VCE = 0.3 V
Vi(on) 2.5 V
3.2 4.7 k
Input resistor R1 6.2
R1/R2 0.9 1 1.1
Resistor ratio -
AC Characteristics
fT - 140 - MHz
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Ccb - 3 pF
Collector-base capacitance VCB = 10 V, f = 1 MHz
-
1) Pulse test: t < 300s; D < 2%
BCR112
Jul-16-2001 3
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
10 -1 10 0 10 1 10 2 mA 10 3
IC
10 -1
10 0
10 1
10 2
10 3
-
hFE
Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20
0.0 0.1 0.2 0.3 V 0.5
VCEsat
10 0
10 1
10 2
mA
IC
Input on Voltage Vi(on) = f (IC)
VCE = 0.3V (common emitter configuration)
10 0 10 1 V 10 2
Vi(on)
10 -1
10 0
10 1
10 2
10 3
mA
IC
Input off voltage Vi(off) = f (IC)
VCE = 5V (common emitter configuration)
1.0 1.2 1.4 1.6 V 2.0
Vi(off)
10 -2
10 -1
10 0
10 1
mA
IC
BCR112
Jul-16-2001 4
Total power dissipation Ptot = f (TS)
0 20 40 60 80 100 120 °C 150
TS
0 50 100 150 200 mW
300
Ptot
Permissible Pulse Load Ptotmax / PtotDC = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0
tp
10 0
10 1
10 2
10 3
-
Ptotmax / PtotDC
D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
Permissible Pulse Load RthJS = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0
tp
10 -1
10 0
10 1
10 2
10 3
K/W
RthJS
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0