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BCR112

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BCR112

Jul-16-2001 1

NPN Silicon Digital Transistor

 Switching circuit, inverter, interface circuit, driver circuit

 Built in bias resistor (R1=4.7k, R2=4.7k)

1

2 3

VPS05161

EHA07184

3

2 1

C

E B

R1

R2

Type Marking Pin Configuration Package

BCR112 WFs 1 = B 2 = E 3 = C SOT23

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage VCEO 50 V

VCBO 50 Collector-base voltage

Emitter-base voltage VEBO 10

Input on Voltage Vi(on) 15

100 mA

IC DC collector current

Total power dissipation, TS = 102 °C Ptot 200 mW

Junction temperature Tj 150 °C

-65 ... 150

Storage temperature Tstg

Thermal Resistance

Junction - soldering point1) RthJS  240 K/W

1For calculation of RthJA please refer to Application Note Thermal Resistance

(2)

BCR112

Jul-16-2001 2

Electrical Characteristics at TA=25°C, unless otherwise specified

Parameter Symbol Values Unit

typ. max.

min.

DC Characteristics

- V

50 -

V(BR)CEO Collector-emitter breakdown voltage

IC = 100 µA, IB = 0

50 -

V(BR)CBO Collector-base breakdown voltage

IC = 10 µA, IB = 0

-

- Collector cutoff current

VCB = 40 V, IE = 0

ICBO - 100 nA

- - mA

Emitter cutoff current VEB = 10 V, IC = 0

IEBO 1.61

20 - - -

DC current gain 1) IC = 5 mA, VCE = 5 V

hFE

VCEsat - - 0.3 V

Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA

0.8 Input off voltage

IC = 100 µA, VCE = 5 V

Vi(off) - 1.5 V

1 -

Input on Voltage IC = 2 mA, VCE = 0.3 V

Vi(on) 2.5 V

3.2 4.7 k

Input resistor R1 6.2

R1/R2 0.9 1 1.1

Resistor ratio -

AC Characteristics

fT - 140 - MHz

Transition frequency

IC = 10 mA, VCE = 5 V, f = 100 MHz

Ccb - 3 pF

Collector-base capacitance VCB = 10 V, f = 1 MHz

-

1) Pulse test: t < 300s; D < 2%

(3)

BCR112

Jul-16-2001 3

DC Current Gain hFE = f (IC)

VCE = 5V (common emitter configuration)

10 -1 10 0 10 1 10 2 mA 10 3

IC

10 -1

10 0

10 1

10 2

10 3

-

hFE

Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20

0.0 0.1 0.2 0.3 V 0.5

VCEsat

10 0

10 1

10 2

mA

IC

Input on Voltage Vi(on) = f (IC)

VCE = 0.3V (common emitter configuration)

10 0 10 1 V 10 2

Vi(on)

10 -1

10 0

10 1

10 2

10 3

mA

IC

Input off voltage Vi(off) = f (IC)

VCE = 5V (common emitter configuration)

1.0 1.2 1.4 1.6 V 2.0

Vi(off)

10 -2

10 -1

10 0

10 1

mA

IC

(4)

BCR112

Jul-16-2001 4

Total power dissipation Ptot = f (TS)

0 20 40 60 80 100 120 °C 150

TS

0 50 100 150 200 mW

300

Ptot

Permissible Pulse Load Ptotmax / PtotDC = f (tp)

10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0

tp

10 0

10 1

10 2

10 3

-

Ptotmax / PtotDC

D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Permissible Pulse Load RthJS = f (tp)

10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0

tp

10 -1

10 0

10 1

10 2

10 3

K/W

RthJS

0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0

Cytaty

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