BU810

BU810 f Z T SGS-THOMSON

^ 7 # RaD(g^(5)[lLi01F^(S)iO(gi

MEDIUM POWER FAST SWITCHING DARLINGTON

DESCRIPTIO N

The BU810 is a silicon epitaxial planar NPN Darling­

ton transistor with integrated base-emitter speed-up diode, mounted in Jedec TO-220 plastic package.

It is particularly suitable as output stage in medium power, fast switching applications.

ABSO LU TE M AXIM UM RATING S

S ym bo l P a ra m e te r V a lu e U nit

V cB O Collector-base Voltage ( Ie = 0) 600 V

V cE O Collector-emitter Voltage (Ib = 0 ) 400 V

<m CD O Emitter-base Voltage (lc = 0) 5 V

lc Collector Current 7 A

• C M Collector Peak Current 10 A

Ib Base Current 2 A

P

tot

Tcase

T

stg

Ti

November 1988 1/4

BU810

THERM AL DATA

Rthj-case Thermal Resistance Junction-case Max 1.66 °C/W

ELECTR IC AL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

S ym bo l P a ra m e te r T e s t C o n d itio n s M in. T yp . M ax. U nit

Ices Collector Cutoff Current

(V Be = 0) VCE = 600 V 200 pA

I CEO Collector Cutoff Current

(Ib = 0 ) V CE = 400 V 1 mA

Iebo* Emitter Cutoff Current

d c = 0 ) V EB = 5 V 150 mA

VcEO(sus)* Collector-emitter Sustaining

lc - 100 mA 400 V

Voltage

V c E ( s a t)* Collector-emitter Saturation l c = 2 A Ib = 2 0 mA 2 V

Voltage lc = 4 A l B = 2 0 0 mA 2.5 V

lc = 7 A l B = 0.7 A 3 V

V B E (s a t)* Base-emitter Saturation lc = 2 A Ib = 2 0 mA 2.2 V

Voltage lc = 4 A Ib = 200 mA 3 V

V F* Diode Forward Voltage If= 7 A 3 V

RESISTIVE SWITCHING TIMES

Sym bol Parameter Test C ond ition s Min. Typ. Max. Unit.

^on Turn-on Time V cc = 250 V

lc = 2 A IB1 = 20 mA VBE(off) = - 5 V

0.6

ps

ts Storage Time 1.5

ps

tf Fall Time 0.5

ps

INDUCTIVE SWITCHING TIMES

S ym b o l P a ra m e te r T e s t C o n d itio n s M in. Typ . M ax. U nit.

ts Storage Time

Vciamp = 2 5 0 V

lc - 7 A IB1 = 0 .7 A Vbe(off) = - 5 V

1.5 ps

tf Fall Time 0.4 ps

ts Storage Time 1.5 ps

tf Fall Time 0.7 ps

* Pulsed : pulse duration = 300 ms, duty cycle = 1.5%

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[Z T SGS-THOMSON

^ 7 # HHCnOHJECIMMIICS

BU810

Safe Operating Areas.

Collector-emitter Saturation Voltage.

(V)

1 10 10* I B(m A)

Base-emitter Saturation Voltage.

10* l6 ' 1 I c (A)

DC Current Gain.

Collector-emitter Saturation Voltage.

G - 4879

T

*FE 100

1 0 -

K n \

1 N o 'v1

1q2 10* 1 l c (A)

Clamped Reverse Bias Safe Operating Areas.

G- 4 88S

r = J SGS-THOMSON

* 7 / NICIHHjeCinMIllOeS

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BU810

Saturated Switching Characteristics Saturated Switching Characteristics, (resistive load).

SGS-THOMSON