MC33078-EP

FEATURES

1 2 3 4

8 7 6 5 OUT1

IN1−

IN1+

V_{CC −}

V_CC+

OUT2 IN2−

IN2+

D PACKAGE (TOP VIEW)

DESCRIPTION/ORDERING INFORMATION

IN+

IN −

OUT +

−

• Controlled Baseline • Low Input Offset Voltage . . . 0.15 mV – One Assembly/Test Site, One Fabrication • Low Total Harmonic Distortion . . . 0.002%

Site • High Slew Rate . . . 7 V/ µ s

• Enhanced Diminishing Manufacturing Sources • High-Gain Bandwidth Product . . . 16 MHz

(DMS) Support • High Open-Loop AC Gain . . . 800 at 20 kHz

• Enhanced Product-Change Notification • Large Output-Voltage Swing . . . 14.1 V to

• Qualification Pedigree

–14.6 V

• Dual-Supply Operation . . . ± 5 V to ± 18 V • Excellent Gain and Phase Margins

• Low Noise Voltage . . . 4.5 nV/√Hz

(1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST,

electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

The MC33078-EP is a bipolar dual operational amplifier with high-performance specifications for use in quality audio and data-signal applications. This device operates over a wide range of single- and dual-supply voltages and offers low noise, high-gain bandwidth, and high slew rate. Additional features include low total harmonic distortion, excellent phase and gain margins, large output voltage swing with no deadband crossover distortion, and symmetrical sink/source performance.

ORDERING INFORMATION

T_A PACKAGE⁽¹⁾ ORDERABLE PART NUMBER TOP-SIDE MARKING

–55°C to 125°C SOIC – D Reel of 2500 MC33078MDREP 33078M

(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at www.ti.com/sc/package.

SYMBOL (EACH AMPLIFIER)

Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN MAX UNIT

V_CC+ Supply voltage⁽²⁾ 18 V

V_CC– Supply voltage⁽²⁾ –18 V

VCC–to VCC+ Supply voltage 36 V

Input voltage, either input^{(2) (3)} V_CC–or V_CC+ V

Input current⁽⁴⁾ ±10 mA

Duration of output short circuit⁽⁵⁾ Unlimited

θJA Package thermal impedance^{(6) (7)} 97 °C/W

TJ Operating virtual junction temperature 150 °C

T_stg Storage temperature range⁽⁸⁾ –65 150 °C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values, except differential voltages, are with respect to the midpoint between V_CC+and V_CC–. (3) The magnitude of the input voltage must never exceed the magnitude of the supply voltage.

(4) Excessive input current will flow if a differential input voltage in excess of approximately 0.6 V is applied between the inputs, unless some limiting resistance is used.

(5) The output may be shorted to ground or either power supply. Temperature and/or supply voltages must be limited to ensure the maximum dissipation rating is not exceeded.

(6) Maximum power dissipation is a function of T_J(max),θJA, and T_A. The maximum allowable power dissipation at any allowable ambient temperature is P_D= (T_J(max) – T_A)/θJA. Operating at the absolute maximum T_Jof 150°C can affect reliability.

(7) The package thermal impedance is calculated in accordance with JESD 51-7.

(8) Long-term high-temperature storage and/or extended use at maximum recommended operating conditions may result in a reduction of overall device life. See http://www.ti.com/ep_quality for additional information on enhanced plastic packaging.

MIN MAX UNIT

V_CC– –5 –18

Supply voltage V

V_CC+ 5 18

T_A Operating free-air temperature –55 125 °C

Electrical Characteristics

V_CC–= –15 V, V_CC+= 15 V, T_A= 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

T_A= 25°C 0.15 2

V_IO Input offset voltage V_O= 0, R_S= 10Ω, VCM= 0 mV

T_A= –55°C to 125°C 3

Input offset voltage

αV_IO V_O= 0, R_S= 10Ω, V_CM= 0 T_A= –55°C to 125°C 2 µV/°C

temperature coefficient

T_A= 25°C 300 750

I_IB Input bias current V_O= 0, V_CM= 0 nA

T_A= –55°C to 125°C 800

T_A= 25°C 25 150

I_IO Input offset current V_O= 0, V_CM= 0 nA

T_A= –55°C to 125°C 175

Common-mode

V_ICR ∆VIO= 5 mV, V_O= 0 ±13 ±14 V

input voltage range

T_A= 25°C 90 110

Large-signal differential

A_VD R_L≥2 kΩ, V_O=±10 V dB

voltage amplification T_A= –55°C to 125°C 80

V_OM+ 10.7

R_L= 600Ω

V_OM– –11.9

VOM+ 13.2 13.8

Maximum output

V_OM V_ID=±1 V R_L= 2kΩ V

voltage swing V_OM– –13.2 –13.7

V_OM+ 13.5 14.1

R_L= 10kΩ

V_OM– –14 –14.6

CMMR Common-mode rejection ratio V_IN=±13 V 80 100 dB

kSVR(1) Supply-voltage rejection ratio VCC+= 5 V to 15 V, VCC–= –5 V to –15 V 80 105 dB

Source current 15 29

I_OS Output short-circuit current |V_ID| = 1 V, Output to GND mA

Sink current –20 –37

T_A= 25°C 2.05 2.5

Supply current

I_CC V_O= 0 mA

(per channel) T_A= –55°C to 125°C 3.5

(1) Measured with V_CC±differentially varied at the same time

D.U.T.

Voltage Gain = 50,000

Scope x 1 R_IN = 1.0 MΩ +

− 100 kΩ

10 Ω

0.1 µF

100 kΩ

0.1 µF 24.3 kΩ

4.7 µF 2.0 kΩ

2.2 µF 22 µF

110 kΩ 4.3 kΩ

1/2 MC33078-EP

NOTE: All capacitors are nonpolarized.

V_CC–= –15 V, V_CC+= 15 V, T_A= 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

SR Slew rate at unity gain A_VD= 1, V_IN= –10 V to 10 V, R_L= 2 kΩ, CL= 100 pF 5 7 V/µs

GBW Gain bandwidth product f = 100 kHz 16 MHz

B1 Unity gain frequency Open loop 9 MHz

C_L= 0 pF –11

Gain margin R_L= 2 kΩ dB

C_L= 100 pF –6

C_L= 0 pF 55

φm Phase margin R_L= 2 kΩ deg

C_L= 100 pF 40

Amplifier-to-amplifier isolation f = 20 Hz to 20 kHz –120 dB

Power bandwidth V_O= 27 V_(PP), R_L= 2 kΩ, THD≤1% 120 kHz

THD Total harmonic distortion V_O= 3 V_rms, A_VD= 1, R_L= 2 kΩ, f = 20 Hz to 20 kHz 0.002 %

z_o Open-loop output impedance V_O= 0, f = 9 MHz 37 Ω

r_id Differential input resistance V_CM= 0 175 kΩ

Cid Differential input capacitance VCM= 0 12 pF

V_n Equivalent input noise voltage f = 1 kHz, R_S= 100Ω 4.5 nV/√Hz

I_n Equivalent input noise current f = 1 kHz 0.5 pA/√Hz

Figure 1. Voltage Noise Test Circuit (0.1 Hz to 10 Hz

)

TYPICAL CHARACTERISTICS

0 100 200 300 400 500 600

5 6 7 8 9 10 11 12 13 14 15 16 17 18 VCC+/–VCC–– Supply Voltage – V

IIB–InputBiasCurrent–nA

V_CM= 0 V TA= 25°C

0 100 200 300 400 500 600

-15 -10 -5 0 5 10 15

VCM– Common Mode Voltage – V IIB–InputBiasCurrent–nA

VCC+= 15 V V_CC–= –15 V T_A= 25°C

0 100 200 300 400 500 600 700 800 900 1000

-55 -35 -15 5 25 45 65 85 105 125 TA– Temperature – °C

IIB–InputBiasCurrent–nA

VCC+= 15 V V_CC–= –15 V V_CM= 0 V

-2 -1.5 -1 -0.5 0 0.5 1 1.5 2

-55 -35 -15 5 25 45 65 85 105 125 TA– Temperature – °C

VIO–InputOffsetVoltage–mV

VCC+= 15 V VCC–= –15 V V_CM= 0 V

INPUT BIAS CURRENT INPUT BIAS CURRENT

vs vs

COMMON-MODE VOLTAGE SUPPLY VOLTAGE

INPUT BIAS CURRENT INPUT OFFSET VOLTAGE

vs vs

TEMPERATURE TEMPERATURE

0 0.2 0.4 0.6 0.8 1 1.2 1.4

-55 -25 5 35 65 95 125

TA– Temperature – °C InputCommon-ModeVoltageLow ProximitytoVCC––V

VCC+= 3 V to 15 V VCC–= -3 V to -15 V èVIO= 5 mV VO= 0 V D

-1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0

-55 -25 5 35 65 95 125

TA– Temperature – °C InputCommon-ModeVoltageHigh ProximitytoVCC+–V

V_CC+= 3 V to 15 V V_CC–= -3 V to -15 V

V_IO= 5 mV VO= 0 V

D

0 1 2 3 4 5 6 7 8 9 10

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 RL– Load Resistance – k@

OutputSaturationVoltage ProximitytoVCC––V

T = –55°CA

T = 25°CA

T = 125°CA

kW -10

-9 -8 -7 -6 -5 -4 -3 -2 -1 0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 R_L– Load Resistance – kh

OutputSaturationVoltage ProximitytoVCC+–V

T = –55°CA

T = 25°CA

T = 125°CA

kW

INPUT COMMON-MODE VOLTAGE INPUT COMMON-MODE VOLTAGE

LOW PROXIMITY TO V_CC– HIGH PROXIMITY TO V_CC+

vs vs

TEMPERATURE TEMPERATURE

OUTPUT SATURATION VOLTAGE PROXIMITY TO V_CC+ OUTPUT SATURATION VOLTAGE PROXIMITY TO V_CC–

vs vs

LOAD RESISTANCE LOAD RESISTANCE

10 20 30 40 50 60 70

-55 -35 -15 5 25 45 65 85 105 125 TA– Temperature – °C

IOS–OutputShort-CircuitCurrent–mA

VCC+= 15 V VCC–= –15 V VID= 1 V

Sink

Source

0 1 2 3 4 5 6 7 8 9 10

-55 -35 -15 5 25 45 65 85 105 125 TA– Temperature – °C

ICC–SupplyCurrent–mA

VCM= 0 V

RL= High Impedance VO= 0 V

VCC±= 15 V±

VCC±= 10 V±

V_CC±= 5 V±

0 10 20 30 40 50 60 70 80 90 100

1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06 1.0E+07 f – Frequency – Hz

CMMR–dB

100 1k 10k 100k 1M 10M

V = 15 V V = –15 V V = 0 V

V = 1.5 V T = 25°C

CC+

CC–

CM CM A

D ±

0 10 20 30 40 50 60 70 80 90 100 110 120

1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06 1.0E+07 f – Frequency – Hz

PSRR–dB

100 1k 10k 100k 1M 10M

V = 15 V V = –15 V T = 25°C

CC+

CC–

A

T3P

T3N

TYPICAL CHARACTERISTICS (continued)

OUTPUT SHORT-CIRCUIT CURRENT SUPPLY CURRENT

vs vs

TEMPERATURE TEMPERATURE

CMRR PSSR

vs vs

FREQUENCY FREQUENCY

0 5 10 15 20 25 30

-55 -35 -15 5 25 45 65 85 105 125 TA– Temperature – °C

GBW–GainBandwidthProduct–MHz

0 5 10 15 20 25 30

5 6 7 8 9 10 11 12 13 14 15 16 17 18 VCC+/–VCC–– Supply Voltage – V

GBW–GaindBandwidthProduct–MHz

0 5 10 15 20 25 30

1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 1.E+07 f – Frequency – Hz

VO–OutputVoltage–V

100 1k 10k 100k 1M 10M

10

V = 15 V V = –15 V R = 2 k A = 1 THD < 1%

T = 25°C

CC+

CC–

L V

A

W

-20 -15 -10 -5 0 5 10 15 20

5 6 7 8 9 10 11 12 13 14 15 16 17 18 VCC+/–VCC–– Supply Voltage – V

VO–OutputVoltage–V

R = 10 k_L W

R = 2 kL W

R = 10 kL W

R = 2 kL W

GAIN BANDWIDTH PRODUCT GAIN BANDWIDTH PRODUCT

vs vs

SUPPLY VOLTAGE TEMPERATURE

OUTPUT VOLTAGE OUTPUT VOLTAGE

vs vs

SUPPLY VOLTAGE FREQUENCY

80 85 90 95 100 105 110

5 6 7 8 9 10 11 12 13 14 15 16 17 18 VCC+/–VCC–– Supply Voltage – V

AV–Open-LoopGain–dB

R = 2 k f < 10 Hz

V = 2/3(V – V ) T = 25°C

L

O CC+ CC–

A

W D

80 85 90 95 100 105 110 115 120

-55 -35 -15 5 25 45 65 85 105 125 TA– Temperature – °C

AV–Open-LoopGain–dB

R = 2 k f < 10 Hz

V = 2/3(V – V ) T = 25°C

L

O CC+ CC–

A

W D

100 110 120 130 140 150 160 170 180 190 200

1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 f – Frequency – Hz

CrosstalkRejection–dB

1k 10k 100k

Drive Channel V = 15 V V = –15 V R = 2 k V = 20 V T = 25°C

CC+

CC–

L

O PP

A

W

10 100

0 5 10 15 20 25 30 35 40 45 50

1.0E+03 1.0E+04 1.0E+05 1.0E+06 1.0E+07 f – Frequency – Hz

ZO–OutputImpedance–

VCC+= 15 V VCC–= –15 V VO= 1 Vrms

TA= 25°C

W

1k 10k 100k 1M 10M

A = 1V

A = 10V

A = 100V

A = 1000V

TYPICAL CHARACTERISTICS (continued)

OPEN-LOOP GAIN OPEN-LOOP GAIN

vs vs

SUPPLY VOLTAGE TEMPERATURE

OUTPUT IMPEDANCE CROSSTALK REJECTION

vs vs

FREQUENCY FREQUENCY

0.0001 0.001 0.01 0.1 1

1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 f – Frequency – Hz

THD–TotalHarmonicDistortion–%

1k 10k 100k

V = 15 V V = –15 V V = 1 V A = 1 R = 2 k T = 25°C

CC+

CC–

O rms

V L A

W

10 100

0.0001 0.001 0.01 0.1 1

0 1 2 3 4 5 6 7 8 9

VO– Output Voltage – Vrms

THD–TotalHarmonicDistortion–%

V = 15 V V = –15 V f = 2 kHz R = 2 k T = 25°C

CC+

CC–

L A

W A = 1V

A = 10V

A = 100_V A = 1000_V

2 3 4 5 6 7 8 9 10

5 6 7 8 9 10 11 12 13 14 15 16 17 18 VCC+/–VCC–– Supply Voltage – V

SR–SlewRate–V/µs Falling Edge Rising Edge

V = 2/3(V – V ) A = 1

R = 2 k T = 25°C D

W

IN CC+ CC–

V L A

2 3 4 5 6 7 8 9 10

-55 -35 -15 5 25 45 65 85 105 125 TA– Temperature – °C

SR–SlewRate–V/µs

V = 15 V V = –15 V

CC+

CC–

V = 20 V A = 1 R = 2 k D

W

IN V L

Falling Edge

Rising Edge

TOTAL HARMONIC DISTORTION TOTAL HARMONIC DISTORTION

vs vs

FREQUENCY OUTPUT VOLTAGE

SLEW RATE SLEW RATE

vs vs

SUPPLY VOLTAGE TEMPERATURE

0 10 20 30 40 50 60 70 80

1.E+03 1.E+04 1.E+05 1.E+06 1.E+07 f – Frequency – Hz

Gain–dB

-180 -135 -90 -45 0

PhaseShift–deg

V = 15 V V = –15 V

CC+

CC–

R = 2 k T = 25°C

L A

W

100k 1M 10M

1k 10k

Phase

Gain

0 3 6 9 12

1 10 100 1000

Cout– Output Load Capacitance – pF

GainMargin–dB

0

10

20

30

40

50

60

70

80

PhaseMargin–deg

Gain, T = 125°CA

Gain, T = 25°CA

Gain, T = –55°CA

Phase, T = 125°CA

Phase, T = 25°CA

Phase, T = –55°CA

V = 15 V V = –15 V

CC+

CC–

V = 0 VO

0 10 20 30 40 50 60 70 80 90 100

10 100 1000

Cout– Output Load Capacitance – pF

Overshoot–%

VCC+= 15 V VCC–= –15 V VIN= 100 mVPP

T = 125°CA

T = 25°CA

T = –55°CA

1 10 100

10 100 1000 10000 100000

f – Frequency – Hz

InputVoltageNoise–nV/rtHz

0.1 1 10

InputCurrentNoise–pA/rtHz

VCC+= 15 V V_CC–= –15 V TA= 25°C

Input Voltage Noise

Input Current Noise

10 100 1k 10k 100k

pA/ÖHz

nV/ÖHz

TYPICAL CHARACTERISTICS (continued)

GAIN AND PHASE GAIN AND PHASE MARGIN

vs vs

FREQUENCY OUTPUT LOAD CAPACITANCE

OVERSHOOT INPUT VOLTAGE AND CURRENT NOISE

vs vs

OUTPUT LOAD CAPACITANCE FREQUENCY

1 10 100 1000

1.E+01 1.E+02 1.E+03 1.E+04 1.E+05 1.E+06 R_S– Source Resistance – è

InputReferredNoiseVoltage–nV/rtHz

V_CC+= 15 V V_CC–= –15 V f = 1 Hz T_A= 25°C

W

10 100 1k 10k 100k

nV/ÖHz

1M

0 2 4 6 8 10 12 14 16

0 1 10 10 0 10 0 0 10 0 0 0 10 0 0 0 0

RSD– Differential Source Resistance – è

GainMargin–dB

0 4 8 12 16 2 0 2 4 2 8 3 2 3 6 4 0 4 4 4 8 5 2 5 6 6 0 6 4

PhaseMargin–deg

VCC+= 15 V V_CC–= –15 V AV= 100 VO= 0 V TA= 25°C Phase Margin

Gain Margin

W

1k 10k 100k

100

0 1 10

-15 -5 5 15 25 35 45 55

-2 2 6 10 14 18 22

Time – µs VO–OutputVoltage–V

-60 -50 -40 -30 -20 -10 0 10

VI–InputVoltage–V V = 15 V

V = –15 V A = 1 R = 2 k C T = 25°C

CC+

CC–

V L

A

W

L= 100 pF Input

Output

-15 -5 5 15 25 35 45 55

-2 2 6 10 14 18 22

Time – µs VO–OutputVoltage–V

-60 -50 -40 -30 -20 -10 0 10

VI–InputVoltage–V V = 15 V

V = –15 V A = –1 R = 2 k C T = 25°C

CC+

CC–

V L

A

W

L= 100 pF Input

Output

INPUT REFERRED NOISE VOLTAGE GAIN AND PHASE MARGIN

vs vs

SOURCE RESISTANCE DIFFERENTIAL SOURCE RESISTANCE

LARGE SIGNAL TRANSIENT RESPONSE LARGE SIGNAL TRANSIENT RESPONSE

(A_V= 1) (A_V= –1)

-0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0.6

-0.5 0.0 0.5 1.0 1.5

Time – µs VO–OutputVoltage–V

-0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 0.1 0.2

VI–InputVoltage–V V = 15 V

V = –15 V A = 1 R = 2 k C T = 25°C

CC+

CC–

V L

A

W

L= 100 pF Input

Output

-500 -400 -300 -200 -100 0 100 200 300 400

-5 -4 -3 -2 -1 0 1 2 3 4 5

Time – s

InputVoltageNoise–nV

T3 VCC+= 15 V VCC–= –15 V BW = 0.1 Hz to 10 Hz TA= 25°C

TYPICAL CHARACTERISTICS (continued)

SMALL SIGNAL TRANSIENT RESPONSE LOW_FREQUENCY NOISE

Output Characteristics

0.25V per Division

250 ns per Division Maximum capacitance

before oscillation = 380 pF

250 ns per Division

0.25V per Division

Maximum capacitance before oscillation = 560 pF

250 ns per Division

0.25V per Division

Maximum capacitance before oscillation = 590 pF

250 ns per Division

0.25V per Division

250 ns per Division

0.25V per Division

250 ns per Division

0.25V per Division

5 V –5 V

15 V

–15 V

RO

VO

R = 2 kL Ω CL

All operating characteristics are specified with 100-pF load capacitance. The MC33078 can drive higher capacitance loads. However, as the load capacitance increases, the resulting response pole occurs at lower frequencies, causing ringing, peaking, or oscillation. The value of the load capacitance at which oscillation occurs varies from lot to lot. If an application appears to be sensitive to oscillation due to load capacitance, adding a small resistance in series with the load should alleviate the problem (see Figure 2).

PULSE RESPONSE PULSE RESPONSE PULSE RESPONSE

(R_L= 600Ω, C_L= 380 pF) (R_L= 2 kΩ, C_L= 560 pF) (R_L= 10 kΩ, C_L= 590 pF)

PULSE RESPONSE PULSE RESPONSE PULSE RESPONSE

(R_O= 0Ω, C_O= 1000 pF, R_L= 2 kΩ) (R_O= 4Ω, C_O= 1000 pF, R_L= 2 kΩ) (R_O= 35Ω, C_O= 1000 pF, R_L= 2 kΩ)

www.ti.com 24-Jan-2013

PACKAGING INFORMATION

Orderable Device Status

(1)

Package Type Package Drawing

Pins Package Qty Eco Plan

(2)

Lead/Ball Finish MSL Peak Temp

(3)

Op Temp (°C) Top-Side Markings

(4)

Samples

MC33078MDREP ACTIVE SOIC D 8 2500 Green (RoHS

& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -55 to 125 33078M

MC33078MDREPG4 ACTIVE SOIC D 8 2500 Green (RoHS

& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -55 to 125 33078M

V62/07606-01XE ACTIVE SOIC D 8 2500 Green (RoHS

& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM -55 to 125 33078M

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) Only one of markings shown within the brackets will appear on the physical device.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

•

NOTE: Qualified Version Definitions:

•

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package Type

Package Drawing

Pins SPQ Reel Diameter

(mm)

Reel Width W1 (mm)

A0 (mm)

B0 (mm)

K0 (mm)

P1 (mm)

W (mm)

Pin1 Quadrant

MC33078MDREP SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

www.ti.com 26-Jan-2013

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

MC33078MDREP SOIC D 8 2500 367.0 367.0 35.0

issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.

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