•iSs.nii-Conciuctoi ^Pi
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.S.A.
TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960
EGP30A - EGP30K
Features
• Glass passivated cavity-free junction.
• High surge current capability.
• Low leakage current.
• Superfast recovery time for high efficiency.
• Low forward voltage, high current capability.
DO-201AD
COLOR BAND DENOTES CATHODE
Fast Rectifiers (Glass Passivated) Absolute Maximum Ratings*
T - 25'C unless otherwise notedSymbol
VR 'p(AV)
'FSM
Tstg
L
Parameter
Breakdown Voltage
Average Rectified Forward Current, .375 " lead length @ TA = 55°C Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature
Value
30A 30B 30C 300 50 100 150 200
30F 300
30G 400
30J 600
320 800 3.0
125 -65 to -65 to
+150 +150
Units
V A A
°C
°C
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics Symbol
PD RWA RflJL
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead
Value
6.25 20 8.5
Units w
°c/w
°c/w
Electrical Characteristics
T. = 25"C unless otherwise notedSymbol
VF t
IR
CT
Parameter
Forward Voltage @ 3.0 A Reverse Recovery Time
IF=0.5A, IR= 1.0 A, lr f= 0 . 2 5 A Reverse Current @ rated VR TA = 25°C
TA= 125°C Total Capacitance
VR=4.0V, f= 1.0MHz
Device
30A 30B 30C | 30D 0.95
30F 30G 1.25 50
30J 320 1.7 75 5.0
100
95 75
Units
V
ns HA HA PF
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Typical Characteristics
Average Rectified Forward Current, IF [A O -* l\ Cx SINC HAL
RES 1NDI .375 LEN
• LEPHA FWAVE
STIVE 0 JCTIVEL (9.0mm STHS
\E
?
OAD LEAD
\
\5 50 75
100 125 150 17 Ambient Temperature [°C]Jl50 J E 125
0 100
a
e I
751 50
£ 25
Jftn>
« n
X
"N,^•S•s.
™ »
•\^
1
Figure 1. Forward Current Derating Curve
5 10 20 50 Number of Cycles at SOHz
Figure 2. Non-Repetitive Surge Current 100
100
0.01
0.2 0.4 0.6 0.8 1 1.2 1.4 Forward Voltage, VF [V]
Figure 3. Forward Voltage Characteristics
I
001
0.001
0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%]
Figure 4. Reverse Current vs Reverse Voltage
5011 NONINDUCTIVE
£
1800H150 S 120 Iu 90
10Q.
0 60 15
0 30 0 0
S
\I S
V V Ss30F-E ,
\K s
S
>
^S
1 1
EG
., N s
'30A-I
S ^ '
^
EP30D
' . ,
•^»
10 100 1000
Reverse Voltage, VH [V]
Figure 5. Total Capacitance
NOTES:
1 Rise time = 7.0 ns man, Input impedance = 1.0 megaohm 22 pf.
2 Rise time -10 ns max, Source impedance = 50 ohms.
+0.5A
0 -0.25A
.1 nA
\
• — trr -j
V J
f ^
**"
—-) 1.0cm [-— SET TIME BASE FOR 5(10ns/cm
