2N7076
Siliconix
P-36736—Rev. C, 30-May-94
1
N-Channel Enhancement-Mode Transistor
Product Summary
V
(BR)DSS(V) r
DS(on)( ) I
D(A)
200 0.10 28
TO-254AA Hermetic Package
G D Top View
S
Case Isolated
D
G
S N-Channel MOSFET
Absolute Maximum Ratings (T C = 25 C Unless Otherwise Noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 200
Gate-Source Voltage VGS 20 VV
Continuous Drain Current (TJ= 150C) TC = 25C
ID
28 Continuous Drain Current(TJ = 150C)
TC = 100C ID
18 A
Pulsed Drain Current IDM 112
Maximum Power Dissipation
TC = 25C
PD
150
W Maximum Power Dissipation
TC = 100C PD
60 W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150
Lead Temperature (1/16” from case for 10 sec.) TL 300 CC
Thermal Resistance Ratings
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient RthJA 50
Maximum Junction-to-Case RthJC 0.83 C/W
Case-to-Sink RthCS 0.2
Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document
#‘1453.
2N7076
2 Siliconix
P-36736—Rev. C, 30-May-94
Specifications (T J = 25 C Unless Otherwise Noted)
Limit
Parameter Symbol Test Condition Min Typa Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 200
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2.0 4.0
V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
Zero Gate Voltage Drain Current IDSS VDS = 160 V, VGS = 0 V 25
mA Zero Gate Voltage Drain Current IDSS
VDS = 160 V, VGS = 0 V, TJ = 125C 250 mA
On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 28 A
Drain-Source On-State Resistanceb rDS(on)
VGS = 10 V, ID = 18 A 0.080 0.10
W Drain-Source On-State Resistanceb rDS(on)
VGS = 10 V, ID = 18 A, TJ = 125C 0.15 W
Forward Transconductanceb gfs VDS = 15 V, ID = 18 A 9.0 12 27 S
Dynamic
Input Capacitance Ciss 2700
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 850 pF
Reverse Transfer Capacitance Crss 300
Total Gate Chargec Qg 63 115
Gate-Source Chargec Qgs VDS = 100 V, VGS = 10 V, ID = 28 A 14 21 nC
Gate-Drain Chargec Qgd 32 60
Turn-On Delay Timec td(on)
W
15 35
Rise Timec tr VDD = 100 V, RL = 3.6 W
I 28 A V 10 V R 2 4 W
100 150
Turn-Off Delay Timec td(off) ns
DD , L
ID^ 28 A, VGEN = 10 V, RG = 2.4 W 70 125 ns
Fall Timec tf 50 100
Source-Drain Diode Ratings and Characteristics
Continuous Current IS 28
A
Pulsed Current ISM 112
A
Diode Forward Voltageb VSD IF = 28 A, VGS = 0 V 0.6 1.8 V
Reverse Recovery Time trr
IF= 28 A di/dt = 100 A/ms 175 650 ns
Reverse Recovery Charge Qrr IF = 28 A, di/dt = 100 A/ms
0.6 mC
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
2N7076
Siliconix
P-36736—Rev. C, 30-May-94
3
Typical Characteristics (25 C Unless Otherwise Noted)
Output Characteristics Transfer Characteristics
Capacitance Gate Charge
Transconductance On-Resistance vs. Drain Current
VDS – Drain-to-Source Voltage (V) – Drain Current (A)ID
VGS = 10 V
5 V 8 V
7 V 6 V
VGS – Gate-to-Source Voltage (V) – Drain Current (A)ID
TC = –55C
125C
– Gate-to-Source Voltage (V)– On-Resistance (
Qg – Total Gate Charge (nC) ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
C – Capacitance (pF) rDS(on))VGS
Crss Ciss
VDS = 100 V – Transconductance (S)gfs
9 V
TC = –55C
125C 25C
VGS = 10 V
ID = 28 A
V 4 V
20 V
ID – Drain Current (A) 50
40
30
20
10
0
25
20
15
10
5
0
6000
5000
4000
3000
2000
1000
0
25
20
15
10
5
0
0.5
0.4
0.3
0.2
0.1
0
15.0
12.5
10.0
7.5
5.0
2.5
0
0 2 4 6 8 10 0 2 4 6 8 10
0 10 20 30 40 50 0 25 50 75 100 125
0 10 20 30 40 50 0 20 40 60 80 100
25C
Coss
2N7076
4 Siliconix
P-36736—Rev. C, 30-May-94
Typical Characteristics (25 C Unless Otherwise Noted)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
(Normalized)– On-Resistance (
TJ – Junction Temperature (C) VSD – Source-to-Drain Voltage (V)
rDS(on)W) – Source Current (A)IS
TJ = 150C TJ = 25C
0 1 2 3 4 5
1 500
10 100 2.25
2.00 1.75 1.50 1.25 1.00 0.75 0.50
–50 –10 30 70 110 150
Thermal Ratings
– Drain Current (A)ID
Normalized Effective Transient Thermal Impedance– Drain Current (A)ID
Safe Operating Area Maximum Drain Current vs. Case Temperature
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec) 2
1
0.1
0.01
10–5 10–4 10–3 10–2 10–1 1 3
0.2 0.1 0.05 0.02
Single Pulse Duty Cycle = 0.5
TC – Case Temperature (C) VDS – Drain-to-Source Voltage (V)
30
25
20
15
10
5
0
2 10 100 500
0.2 1 10
100 10 ms
1 ms
10 ms
TC = 25C dc Single Pulse Limited by
rDS(on)
0 25 50 75 100 125 150
100 ms
100 ms
