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BLW78

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, U na.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.S.A.

HF/VHF power transistor

TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960

BLW78

DESCRIPTION

N-P-N silicon planar epitaxial transistor intended for use in class-A, AB or B operated mobile, industrial and military transmitters in the h.f.

and v.h.f. bands. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions.

It has a 1/2" flange envelope with a ceramic cap. All leads are isolated from the flange.

QUICK REFERENCE DATA R.F. performance up to Th = 25 °C

MODE OF OPERATION

c.w. (class-B) s.s.b. (class-A) s.s.b. (class-AB)

VCE V 28 26 28

Ic Iqzs)

A - 3 0,05

f MHz

150 28 28

PL W 100

35(P.E.P.) 100(P.E.P.)

Gp

dB

> 6 typ. 19,5 typ. 19,0

'1

%

> 70 - typ. 42

djd>

dB

-

typ. -40 typ. -30

Note

1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.

Relative to the according peak envelope powers these figures should be increased by 6 dB.

PIN CONFIGURATION PINNING-SOT121B.

Fig.1 Simplified outline. SOT121B.

PIN 1 2 3 4

DESCRIPTION collector

emitter base emitter

NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quniih/ S«mi-f nnrWtnrc

(2)

HF/VHF power transistor BLW78

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0)

peak value VCESM Collector-emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO Collector current (average) IqAV) Collector current (peak value); f> 1 MHz ICM R.F, power dissipation (f > 1 MHz); Tmb = 25 °C Prf

Storage temperature Tstg

Operating junction temperature Tj

max.

max.

max.

max.

max.

max.

70 35 4 10 25 160

V V V A A W -65 to+150 °C max. 200 "C

Fig.2 D.C. SOAR.

50

I Continuous d.c operation II Continuous r,f operation

III Short-time operation during mismatch

100

Fig.3 R.F. power dissipation; VCE < 28 V; f > 1 MHz.

THERMAL RESISTANCE

(dissipation = 80 W; Tmb = 86 °C; i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink

Rthj-mb(dc) Rth j-mb(rf) Rth mb-h

1,45 K/W 1,06 K/W 0,2 K/W

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HF/VHF power transistor BLW78

CHARACTERISTICS Tj = 25 IJC

Collector-emitter breakdown voltage VBE = 0; lc = 50 mA

Collector-emitter breakdown voltage open base; lc = 100 mA

Emitter-base breakdown voltage open collector; IE = 5 mA Collector cut-off current

VBE = 0; VCE = 35 V D.C. current gainf)

lc = 5 A; VCE = 5 V

Collector-emitter saturation voltage IC= 1 5 A ; IB = 3 A

Transition frequency atf = 100 MHz'2) -IE = 5 A; VCB = 28 V

-IE = 15 A; VCB = 28 V

Collector capacitance at f = 1 MHz IE = le = 0; VCB = 28 V

Feedback capacitance atf = 1 MHz lc = 100 mA; VCE = 28 V Collector-flange capacitance

Notes

1. Measured under pulse conditions: tp < 300 us; S < 0,02.

2. Measured under pulse conditions: tp < 50 us; 5 < 0,01.

V(BR)CES > 70 V

V(BR)CEO > 35 V

V(BR)EBO > 4 V

ICES < 5 mA

hFE

V,CEsat

20 to 85

typ. 2 V

fT typ. 370 MHz fT typ. 350 MHz

Cc typ. 155 pF

Cre typ. 102 pF Crf typ. 3 pF

(4)

HF/VHF power transistor BLW78

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT121B

D --

t '~

D1 U3

10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

mm

inches A 7,27 617 0.286 0,243

b 582 556 0.229 0.219

c 0.16 0.10 0006 0004

D 1286 12,59 0.506 0.496

D1

12,8;

12,5"

o.sof

0495

D

1

2,83 2,57 .505 495

F 2.67 2,41 0,105 0.095

H 28,45 25.52 1 120 1.005

L 7.93 6,32 0312 0249

P 3,30 3.05 0130 0.120

Q 4 4 5 391 0.175 0154

q

18,4

0 7 2 , : 24 90

098 097

U2

6.48 6.22 0255 0245

U3

12.32 1206 0485

|_0.475

W1 051

0.02

W2

1.02

004 45°

OUTLINE VERSION

SOT121B

IEC

REFERENCES

JEDEC EIAJ

EUROPEAN PROJECTION

Cytaty

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