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BUZ20

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BUZ20 r z T SGS-THOMSON

i^o(g^©[i[L[i(gir^(Q)K{io(gi

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

TYPE Voss ^ D S ( o n ) *D

BUZ20 100 V o,2 n 12 A

• 100 VOLTS - FOR UPS APPLICATIONS

• ULTRA FAST SWITCHING

• RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦

• EASY DRIVE - FOR REDUCED AND COST INDUSTRIAL APPLICATIONS:

• UNINTERRUPTIBLE POWER SUPPLIES

• MOTOR CONTROLS

N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switch­

ing times make this POWER MOS transistor ideal for high speed switching applications.

Typical applications include UPS, battery charg­

ers, printer hammer drivers, solenoid drivers and motor control.

TO-220

INTERNAL SCHEMATIC DIAGRAM

Qo

G O - Os

ABSOLUTE MAXIMUM RATINGS

V DS Drain-source voltage (VGS = 0) 100 V

V DGR Drain-gate voltage (RGS = 20 KO) 100 V

V G S Gate-source voltage ± 2 0 V

b Drain current (continuous) Tc = 25°C 12 A

'd m Drain current (pulsed) 48 A

Ptot Total dissipation at Tc < 2 5 °C 75 W

"^stg Storage temperature - 5 5 to 150 °C

T i Max. operating junction temperature 150 °C

DIN humidity category (DIN 40040) E

IEC climatic category (DIN IEC 68-1) 55/150/56

♦ Introduced in 1988 week 44

June 1988 1/4

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BUZ20

THERMAL DATA

R,hj. case Thermal resistance junction-case max 1.67 °C/W

R,hj. amb Thermal resistance junction-ambient max 75 °C/W

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)

Parameters Test C onditions Min. Typ. Max. Unit

OFF

V (B R ) d s s Drain-source breakdown voltage

lD— 250 fiA VqS = 0 100 V

lDSS Zero gate voltage drain current (VGS = 0)

VDS= Max Rating

VDS= Max Rating Tj = 125°C

250 1000

mA fA lGSS Gate-body leakage

current (VDS = 0)

Vq s= ± 2 0 V ±100 nA

ON

^ G S (th ) Gate threshold

voltage

V D S ~ V G S lD= 1 mA 2.1 4 V

R D S (o n ) Static drain-source on resistance

VGS= 10 V _Q II CO < 0.2 0

ENERGY TEST

'uis Unclamped inductive VDD= 30 V L = 100 n H 12 A

switching current (single pulse)

starting T j= 25°C

DYNAMIC

9 t s Forward

transconductance

V DS = 25 V lD= 6 A 2.7 mho

^ i s s Input capacitance 2 0 0 0 PF

c^ o s s Output capacitance V DS= 2 5 V f= 1 MHz 500 PF

n^ r s s Reverse transfer

capacitance

v GS= o 140 PF

SWITCHING

(o n ) Turn-on time VD0= 30 V lD= 2.9 A 45 ns

t r Rise time RGs= 50 ft VGS= 10 V 75 ns

I d (o fl) Turn-off delay time 140 ns

t » Fall time 80 ns

2/4 r = J SCS-THOMSON

^ 7 # , M MM W icnim nct

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BUZ20

ELECTRICAL CHARACTERISTICS (Continued)

Param eters Test C onditions Min. Typ. Max. Unit

SOURCE DRAIN DIODE

'S D Source-drain current Tc = 25° C 12 A

'S D M Source-drain current

(pulsed)

48 A

V S D Forward on voltage <80- 24 A V G S - 0 1.8 V

‘ rr Reverse recovery time

200 ns

Q r r Reverse recovered

charge

Is d= 12 A di/dt = lOOA/^s 1.6

I*c

Output characteristics Transfer characteristics Transconductance

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BUZ20

Static drain-source on resistance

RoS(on) ( A )

0.14

0.12

0.10

008

0.06

0.04

0 10 20 30 40 50 lo(A)

Maximum drain current

Capacitance variation Gate threshold voltage

Source-drain diode forward characteristics

kglA I

Id'

10®

GC-Mtt

SGS-THOMSON

Gate charge vs gate-source voltage

«-o*a

VgsIV!

0 20 40 60 Q,(nC)

Drain-source on resistance vs temperature

-5 0 0 50 100 Tj (°C)

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