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20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.S.A.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

Silicon NPN Power Transistor BUY89

DESCRIPTION

• High Switching Speed

• Collector-Emitter Sustaining Voltage- : VCEO(susr 800V

APPLICATIONS

• Designed for use in AC motor control systems from three- phase mains.

ABSOLUTE MAXIMUM RATING S(Ta=25C) SYMBOL

VCES VCEO VEBO Ic

I CM

ICSM

IB

IBM

PC

T,

Tslg

PARAMETER

Collector- Emitter Voltage (VBE= 0) Collector-Emitter Voltage

Emitter- Base Voltage Collector Current-Continuous Collector Current-Peak Collector Current-Peak Non-repetitive Base Current Base Current-Peak Collector Power Dissipation

@TC=25'C

Junction Temperature Storage Temperature Range

MAX

1500

800

5

6

10

15

4

6

80

150

-65-150 UNIT

V

V

V

A

A

A

A

A

W

r

•c

THERMAL CHARACTERISTICS SYMBOL

Rth j-c

PARAMETER

Thermal Resistance, Junction to Case

MAX 1.12

UNIT

r/w

3 i/^

ra 2

PIN 1.BASE 2.B/IITTER

3. COLLECT OR (CASE) TO-3 package

f

^

r

r i

t-E

h* —

*4U— D I

- u — *•

J*-L-*

^K~\ n ^~~^*r "™~ ^

t Y

DIM A B

c

D E 13 H K L N

g u

V

^X

I

=, c

PL

./ ' r

9 c -

-BH

nun MN I MAX

3900

?S.3tl 7.80 0.30 140

26.67 8.30 1.10 1 60 10.92

5.46 11.40 1675 19.40 4.00 3000 4.30

13.50 1705 19.62 4.20 3020 450

I

i3H t t

', B

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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Silicon NPN Power Transistor BUY89

ELECTRICAL CHARACTERISTICS Tc=25°C unless otherwise specified

SYMBOL

VcEO(SUS)

VcE(sat)

VeE(sat)

ICES

IEBO

hFE

fi

COB

PARAMETER

Collector-Emitter Sustaining Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Current-Gain — Bandwidth Product

Output Capacitance

CONDITIONS

lc=0.1A; !B=0;L=25mH

|c= 4.5A; |B= 2A

lc= 4.5A; IB= 2A

VcE=VcESMmax;VBE= 0

VCE=VcESMmax;VBE= 0;Tj= 100'C

VEB= 5V; lc= 0

lo=4.5A;VCE=5V

lc=0.1A;VcE=5V;ftes,= 5MHz

lE=0;VCB=10V;f,es,= 1MHz

MIN

800

2.5 TYP.

7

125 MAX

1.0

1.5

1

10

UNIT

V

V

V

mA

mA

MHz

pF

Switching Times , Resistive Load

ton

lstg

tf

Turn-On Time

Storage Time

Fall Time

lc=4.5A;lBi=-lB2=2A;

Vcc= 250V; RL= 56 O

1.5

4.5

0.5

u s M. s

u s

Obraz

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