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2N3879

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20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A. 2N3B7S

SILICON PLANAR NPN POWER TRANSISTOR

TELEPHONE: (201) 376-2922 (212) 227-6005 FAX: (201) 376-8960

TOM

Absolute Maximum Ratings

Collector-Base

Voltage 120V Collector-Emitter

Voltage 90V Emitter-Base

Voltage 7V D.C. Collector

Current 7A Power Dissipation

at 1CXTC Case

Temperature 20W Operating and Storage

Temperature Range —65 to 4-200'C Electrical Specifications (at 25°C unless noted)

Test D.C. Pulse current gain D.C. Pulse current gain (Note 1) D.C. Pulse current gain (Note 1) Collector saturation voltage (Note 1) Base-emitter voltage (Note 1) Collector-emitter sustaining voltage Collector-emitter sustaining voltage

Emitter-base breakdown voltage Collector cutoff current

Collector cutoff current, 150'C Emitter-base cutoff current Emitter-collector cutoff current Collector capacitance

Gain-bandwidth product Delay time _ ., . . J Rise time Switching speeds

Storage time Fall time

Symbol

h,t h,, h>c

V,.,(sat)

Vc(o(SUS)

V,,,(sus)

BV,,0 l.r,

l,.ix

l,.o l,,o

C,.,,

f,

trf t, t, t.

Min.

40

20

12

— 75 90

7

— _

— 40 _

Max.

80

' 1

2

;

— 4 4 2 5 175 _ 40 400 800 400

Units

V V V V

V mA mA mA mA /i /if mHz nsec nsec nsec nsec

Test Conditions I,;=0.5A, V,..=5V I,.=±4A. V, t=5V lc=4A, V«=2V 1. =4A, l,=400mA 1, =4A, V,;,=2V

1. =200mA, l,=0 (pulse test) 1, =200mA, l.=:0, Rn=50« (pulse

test) l,=10mA, 1. =0 ! V..i=100V,Vi«=-1.5V

Vc.=100V, V,.=-1.5V V,.=4V, 1, -0 V,,=40V, l,=0

V, ,=10V, l,=0, f=10mHz 1, -500mA, V,t-10V, f-lOmHz

|

1, =4A, V, l;=30V li.=— lH=400rnA

Quality Semi-Conductors

Cytaty

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