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CMPD914

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MAXIMUM RATINGS: (TA=25°C)

SYMBOL UNITS

Continuous Reverse Voltage VR 75 V

Peak Repetitive Reverse Voltage VRRM 100 V

Continuous Forward Current IF 250 mA

Peak Repetitive Forward Current IFRM 250 mA

Forward Surge Current, tp=1.0 µs IFSM 4.0 A

Forward Surge Current, tp=1.0 ms IFSM 2.0 A

Forward Surge Current, tp=1.0 s IFSM 1.0 A

Power Dissipation PD 350 mW

Operating and Storage

Junction Temperature TJ, Tstg -65 to +150 °C

Thermal Resistance ΘJA 357 °C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN MAX UNITS

BVR IR=100µA 100 V

IR VR=20V 25 nA

IR VR=75V 5.0 µA

VF IF=10mA 1.0 V

CT VR=0V, f=1.0 MHz 4.0 pF

trr IR=IF=10mA, RL=100Ω, Rec. to 1.0 mA 4.0 ns

CMPD914

HIGH SPEED SWITCHING DIODE

SOT-23 CASE

Central

Semiconductor Corp.

TM

R4 (13-November 2002) DESCRIPTION:

The Central Semiconductor CMPD914 is a ultra- high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, designed for high speed switching applications.

MARKING CODE: C5D

(2)

Central

Semiconductor Corp.

TM

SOT-23 CASE - MECHANICAL OUTLINE

CMPD914

HIGH SPEED SWITCHING DIODE

R4 (13-November 2002) LEAD CODE:

1) ANODE

2) NO CONNECTION 3) CATHODE

MARKING CODE: C5D

Cytaty

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