Parameter Typ (Note 1) Max (Note 2) Unit Comments
Sector Erase Time 0.4 5 sec Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time 108 sec
Word Program Time 7 210 µs Excludes system level
overhead (Note 5)
Accelerated Word Program Time 4 120 µs
Chip Program Time (Note 3) 50 200 sec
Description Min Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#) –1.0 V 13 V
Input voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V
VCC Current –100 mA +100 mA
Parameter
Symbol Parameter Description Test Setup Typ Max Unit
CIN Input Capacitance VIN = 0 4.2 5.0 pF
COUT Output Capacitance VOUT = 0 5.4 6.5 pF
CIN2 Control Pin Capacitance VIN = 0 3.9 4.7 pF
Parameter Description Test Conditions Min Unit
Minimum Pattern Data Retention Time
150°C 10 Years
125°C 20 Years
3233 \ 16-038.9h
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT AS NOTED).
4. e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7 SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
PACKAGE VBB 080
JEDEC N/A
11.50 mm x 9.00 mm NOM PACKAGE
SYMBOL MIN NOM MAX NOTE
A --- --- 1.00 OVERALL THICKNESS
A1 0.20 --- --- BALL HEIGHT
A2 0.62 --- 0.76 BODY THICKNESS
D 11.50 BSC. BODY SIZE
E 9.00 BSC. BODY SIZE
D1 8.80 BSC. BALL FOOTPRINT
E1 5.60 BSC. BALL FOOTPRINT
MD 12 ROW MATRIX SIZE D DIRECTION
ME 8 ROW MATRIX SIZE E DIRECTION
N 80 TOTAL BALL COUNT
φb 0.30 0.35 0.40 BALL DIAMETER
e 0.80 BSC. BALL PITCH
SD / SE 0.40 BSC. SOLDER BALL PLACEMENT
(A3-A6, B3-B6, L3-L6, -M3-M6) DEPOPULATED SOLDER BALLS
BOTTOM VIEW
Revision A (September 30, 2002)
Initial release.
Revision A+1 (October 29, 2002)
Distinctive Characteristics
Added VIO option at 1.8 V and 3 V I/O to Enhanced VIO Control section.
Modified wording of WP#/ACC (Write Protect/Acceler-ation) Input.
Product Selector Guide
Modified the Product Selector Guide Table.
Ordering Information
Changed package type from TBD to VK.
Added VKI to Valid combinations table.
Added Process Technology to Standard Product sec-tion.
Revised Order Numbers and Package Markings to re-flect speed option changes.
Global
Changed 55 speed option to 53, changed 65 speed option to 63 and 68.
Table 1. Am29PDL127H Device Bus Operations Added note #2.
Requirements for Reading Array Data Reworded Page Mode Read section Common Flash Memory Interface (CFI)
Changed wording in last sentence of third paragraph from, “...the autoselect mode.” to “...reading array data.”
Changed CFI website address.
Command Definitions
Changed wording in last sentence of first paragraph from, “...resets the device to reading array data.” to ...”may place the device to an unknown state. A reset
command is then required to return the device to reading array data.”
Customer Lockable: SecSi Sector NOT Programmed or Protected at the factory.
Added second bullet, SecSi sector-protect verify text and figure 3.
SecSi Sector Flash Memory Region and Enter SecSi Sector/Exit SecSi Sector Command Sequence
Added notes, “Note that the ACC function and unlock bypass modes are not available when the SecSi sector is enabled.”
Sector Erase Command Sequence and Chip Erase Command Sequence
Added “Note that the SecSi Sector, autoselect, and CFI functions are unavailable when a [program/erase]
operation is in progress.”
Table 13. Memory Array Command Definitions Changed the first address of the unlock bypass reset command sequence from BA to XXX.
CMOS Compatible
Added ILR parameter to table.
Deleted IACC parameter from table.
Revision A+2 (January 24, 2003)
Ordering Information
Corrected the package marking for package type PC on 83 and 88 speed options.
Revision A+3 (June 20, 2003)
Distinctive Characteristics
Changed the active read current to 55 mA.
Product Selector Guide
Added row to table to expand speed options and allow for another VCC range.
Revision A+4 (June 30, 2003)
Product Selector Guide
Corrected typo in the VCC,VIO range for the 53 speed option.
Trademarks
Copyright © 2003 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
©2003 Advanced Micro Devices, Inc.
01/03 Printed in USA One AMD Place, P.O. Box 3453, Sunnyvale, CA 94088-3453 408-732-2400
TWX 910-339-9280 TELEX 34-6306 800-538-8450 http://www.amd.com Advanced Micro Devices reserves the right to make changes in its product without notice
in order to improve design or performance characteristics.The performance characteristics listed in this document are guaranteed by specific tests, guard banding, design and other practices common to the industry. For specific testing details, contact your local AMD sales representative.The company assumes no responsibility for the use of any circuits described herein.
© Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD Arrow logo and combination thereof, are trademarks of
Advanced Micro Devices, Inc. Other product names are for informational purposes only and may be trademarks of their respective companies.
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