Investigation of Pressure Assisted Nanosilver Sintering Process for Application in Power Electronics

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Delft University of Technology

Investigation of Pressure Assisted Nanosilver Sintering Process for Application in Power

Electronics

Zhang, Hao

DOI

10.4233/uuid:49ccc901-a128-424f-9e9d-e2f8c63ad31b

Publication date

2019

Document Version

Final published version

Citation (APA)

Zhang, H. (2019). Investigation of Pressure Assisted Nanosilver Sintering Process for Application in Power

Electronics. https://doi.org/10.4233/uuid:49ccc901-a128-424f-9e9d-e2f8c63ad31b

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To cite this publication, please use the final published version (if applicable).

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This work is downloaded from Delft University of Technology.

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 𝑑𝜌 𝑑𝑡= 3 2𝜎(1 − 𝜌) (1 − 𝛼 ( 1 𝜌− 1) 1 3_ln 1 1−𝜌) 1 𝜂 ρ σ α ρ η σ 𝜎 = 𝛾 (_𝑅1 1+ 1 𝑅2) + 𝑃 γ

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𝐻𝐼𝑇=𝐹𝑚𝑎𝑥_𝐴

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σ ε 𝜎 = {𝐸𝜀 (𝜎 ≤ 𝜎𝑦) 𝜎𝑦(1 +_𝜎𝐸 𝑦𝜀𝑝) 𝑛 (𝜎 > 𝜎𝑦) σ ε σ 𝜎𝑦≈𝐻₃𝐼𝑇 σ σ σ  σ 

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μ μ        𝜎 = {31.72𝜀 (𝜎 ≤ 0.26 GPa) 0.26(1 + 120.22𝜀𝑝)0.43 (𝜎 > 0.26 GPa) 𝜎 = {39.93𝜀 (𝜎 ≤ 0.33 GPa) 0.33(1 + 122.65𝜀𝑝) 0.47 (𝜎 > 0.33 GPa) 𝜎 = {66.73𝜀 (𝜎 ≤ 0.64 GPa) 0.64(1 + 104.64𝜀𝑝)0.48 (𝜎 > 0.64 GPa) 𝜎 = {81.83𝜀 (𝜎 ≤ 0.67 GPa) 0.67(1 + 122.69𝜀𝑝) 0.48 (𝜎 > 0.67 GPa)

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𝑛𝑣= n × exp (−_𝑅𝑇𝑄𝑣)

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  𝐸𝐼𝑇= 𝐴 + 𝐵 ∗ 𝑇 𝐸𝐼𝑇= 21.41 − 0.09𝑇 𝑇 ∈ (140～200°C) 𝐸𝐼𝑇= 29.14 − 0.11𝑇 𝑇 ∈ (140～200°C) 𝐸𝐼𝑇= 39.36 − 0.16𝑇 𝑇 ∈ (140～200°C) 𝐸𝐼𝑇= 51.43 − 0.20𝑇 𝑇 ∈ (140～200°C)

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   𝜀̇ = A ∙ [sinh(𝛼 ∙ 𝜎)]𝑛_{∙ 𝑒𝑥𝑝 (}−𝐸𝑎 𝑅∙𝑇) 𝜀̇ σ α α

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   𝜀̇ = A ∙ [sinh(𝛼 ∙ 𝜎)]𝑛_{∙ 𝑒𝑥𝑝 (}−𝐸𝑎 𝑅∙𝑇) 𝜀̇ σ α α

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𝐹 = √3₂(𝑠 − 𝛼)(𝑠 − 𝛼) − 𝑌 = 0 α α α = ∑𝑛 𝑖=1𝛼𝑖 ∆𝛼𝑖=2₃𝐶𝑖∙ ∆𝜀𝑝𝑙− 𝛾𝑖𝛼𝑖∙ ∆𝜀̂𝑝𝑙+_𝐶1 𝑖 𝑑𝐶𝑖 𝑑𝜃∆𝜃 ∙ 𝛼 ε θ γ γ  γ γ    

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