20 STERN AVE
SPRINGFIELD, NEW JERSEY 07081
U.SATELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 378-8960
MECHANICAL DATA Dimensions in mm (inches)
19.05 (0.750)
mln.
31
to O isi!
15.42 (0.607)
max.
m
2.286 d/4") UNF2A
2N1617 NPN SILICON TRANSISTOR
Bipolar Power Transistor TO-61 Hermetic Package High Current Switching
LF Large Signal Amplification
TO-61 Metal Package.
Pin 1 - Emitter Pin 2 - Base Case - Collector
ABSOLUTE MAXIMUM RATINGS (T
case= 25°C unless otherwise stated) VCBO
VCEO VEBO
"c PD
TSTG • TJ
Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Total Device Dissipation Derate above 100°C
Storage and Operating Junction Temperature Range
80V 70V 8V 5A 85W
570 mW/°C -65to+175
eC
NJ Serni-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
2N1617
'CBO
!CEX
'EBO
V(BR)CEO*
V(BR)EBO*
V(BR)CBO'
h
2iE
VcEsat
VBE fT Rth(J-C)
Parameter
Collector-Base cut-off current Tease = 150°C
Collector-Emitter cut-off current
Emitter-Base cut-off current
Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Breakdown Voltage Static Forward Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter Voltage
Transition Frequency (f=lMHz) Thermal Resistance (junction to case)
Test
V
CB= 80V
VCB = 86V
VEB = 8V lc = 100mA IB = 1mA lc = 1mA VCE = 12V IC = 2A VCE = 12V Vce = 30V
Conditions
|
E= 0
VBE = -1V
|c = 0
IB = 0 lc = 0 IE = 0 lc = 2A IB = 250mA IC = 2A lc = 300mA
Min. Typ. Max.
10-
1
1
70 8 80
15 75 2 3 3
1.75
Units
mA
V
-
V
MHz
°C7W
' Pulse test tp = 300(is , 8 < 2%
