MOS FIELD EFFECT TRANSISTOR
2SJ448
SWITCHING
P-CHANNEL POWER MOS FET
The information in this document is subject to change without notice. Before using this document, please
DESCRIPTION
The 2SJ448 is P-channel MOS Field Effect Transistor designed for high voltage switching applications.
FEATURES
• 250 V rating high withstand voltage
• Low on-state resistance:
RDS(on) = 2.0 Ω MAX. (VGS = –10V, ID = –2.0A)
• Low input capacitance:
Ciss = 470 pF TYP.
• Narrow gate cut-off voltage width:
VGS(off) = −5.5 to −4.0 V
• Built-in gate protection diode
• Full-mold package for easy mounting
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS –250 V Gate to Source Voltage (VDS = 0 V) VGSS m30 V Drain Current (DC) (TC = 25°C) ID(DC) m4.0 A Drain Current (pulse) Note1 ID(pulse) m16 A Total Power Dissipation (TC = 25°C) PT1 30 W Total Power Dissipation(TA = 25°C) PT2 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current Note2 IAS –4.0 A
Single Avalanche Energy Note2 EAS 80 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = –125V, RG = 25 Ω, VGS = –20 → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ448 Isolated TO-220
★ (Isolated TO-220)
★
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit
Zero Gate Voltage Drain Current IDSS VDS = –250V, VGS = 0V –100 µA
Gate Leakage Current IGSS VGS = m25V, VDS = 0V m10 µA
Gate Cut-off Voltage VGS(off) VDS = –10V, ID = –1mA –4.0 –4.8 –5.5 V Forward Transfer Admittance | yfs| VDS = –10V, ID = –2.0A 1.0 2.3 S Drain to Source On-state Resistance RDS(on) VGS = –10V, ID = –2.0A 1.5 2.0 Ω
Input Capacitance Ciss VDS = –10V 470 pF
Output Capacitance Coss VGS = 0V 200 pF
Reverse Transfer Capacitance Crss f = 1MHz 70 pF
Turn-on Delay Time td(on) VDD = –125V, ID = –2.0 A 13 ns
Rise Time tr VGS = –10V 7 ns
Turn-off Delay Time td(off) RG = 10Ω 34 ns
Fall Time tf 10 ns
Total Gate Charge QG VDD= –200V 15 nC
Gate to Source Charge QGS VGS = –10V 4 nC
Gate to Drain Charge QGD ID = –4.0A 9 nC
Body Diode Forward Voltage VF(S-D) IF = 4.0A, VGS = 0V 1.0 V
Reverse Recovery Time trr IF = 4.0A, VGS = 0V 195 ns
Reverse Recovery Charge Qrr di/dt = 50A/µs 760 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME
RG = 25 Ω 50 Ω
L
VDD
VGS = –20 → 0 V
BVDSS
IAS
ID
VDS
Starting Tch
RG = 10 Ω D.U.T.
PG.
PG.
0 τ
RL
VDD
VGS
ID(−) 0
0 10%
10%
90%
90%
10%
90%
ID
VGS
td (off)
td (on)
ton toff
tf
tr
TEST CIRCUIT 3 GATE CHARGE D.U.T.
RL
VDD
50 Ω IG = –2 mA PG.
VDD
VGS(−)
RG
D.U.T.
VGS
Wave Form
ID
Wave Form
τ = 1 µs Duty Cycle ≤ 1%
TYPICAL CHARACTERISTICS (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID - Drain Current - A
–0.1
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
TC - Case Temperature - ˚C
dT - Percentage of Rated Power - %
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature - ˚C
PT - Total Power Dissipation - W
0 20 40 60 80 100 120 140 160 35
30 25 20 15 10 5
0 –10 –15 –20
–15 –1.0
–10
–100 Pulsed
–10
–5
0
Pulsed
–5 –10
TA = –25˚C 25˚C 75˚C 125˚C
–5
VDS = –10 V FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID - Drain Current - A
–0.1 –1 –1.0
–10 –100
–10 –100 –1000
RDS(on) Limited
ID(pulse)
PW = 100 s
10 ms 1 ms Power dissipation Limitted
0 20 40 60 80 100 120 140 160 20
40 60 80 100
DC
ID(DC) µ
TC = 25˚C Single Pulse
VGS= –20 V –10 V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
|yfs| - Forward Transfer Admittance - S
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - Ω
0 –5
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
- Gate to Source Cut-off Voltage - V
- Drain to Source On-state Resistance - Ω
2.0
VDS = –10 V Pulsed
–1.0 1.0
10 100
–10 –100
1.0 3.0
–10 –15
Pulsed
4.0
Pulsed 6.0
–2.0
VDS = –10 V ID = –1 mA
–4.0 –6.0 –8.0 0.1
2.0
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth(t) - Transient Thermal Resistance - ˚C/W
10
0.001 0.01 0.1 1 100 1000
1 m 10 m 100 m 1 10 100 1000
10 100
Single Pulse Rth(ch-C) = 4.17˚C/W
–0.1
VGS = –10 V
µ µ
Rth(ch-A) = 62.5˚C/W
TA = –25˚C 25˚C 75˚C 125˚C
ID = –4.0 A –2.0 A –0.8 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
RDS(on) - Drain to Source On-state Resistance - Ω SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
ISD - Diode Forward Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on), tr, td(off), tf - Switching Time - ns
1.0 –0.1 0
–50 1.0
2.0 3.0
0 50 100 150
ID = –2.0 A
0.1
0 1 10 100
0.5
Pulsed
1.0 –1.0 10 100 1000
–10 –100 –1000
VGS = 0 V f = 1 MHz
10 100 1000
–1.0 –10 –100
VGS - Gate to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
ID - Drain Current - A
trr - Reverse Recovery Time - ns
di/dt = 50 A/ s VGS = 0 V
µ
10 0.1 100 1000 10000
1.0 10 100
1.0 1.5
4.0
VDD = –125 V VGS = –10 V RG = 10 Ω
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
QG - Gate Charge - nC
VDS - Drain to Source Voltage - V
0
4 8 12 16
–100 –200
ID = –4.0 A
–4 –8 –12 –16 VGS = –10 V
Ciss
tr
tf
VGS = 0 V −10 V
0 Crss
Coss
td(on)
td(off)
VDD= –200 V –125 V –50 V
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
IAS - Single Avalanche Current - A
SINGLE AVALANCHE ENERGY DERATING FACTOR
Starting Tch - Starting Channel Temperature - ˚C
Energy Derating Factor - %
–1.0
0 25 –10
–100
100 1 m 10 m 100 m
VDD = –125 V VGS = –20 → 0 V RG = 25 Ω
20 80 120 160
50 75 100 125 150
100
60 40 140
EAS = 80 mJ ID = –4.0 A
–0.1µ
VDD = –125 V RG = 25 Ω VGS = –20 → 0 V IAS ≤ –4 A
PACKAGE DRAWING (Unit: mm)
10.0 ± 0.3
3.2 ± 0.2 φ 4.5 ± 0.2
2.7 ± 0.2
2.5 ± 0.1 0.65 ± 0.1 1.5 ± 0.2
2.54 1.3 ± 0.2
2.54 0.7 ± 0.1
4 ± 0.2
15.0 ± 0.3 12.0 ± 0.2
3 ± 0.1
1 2 3
1.Gate 2.Drain 3.Source
13.5MIN.
Isolated TO-220(MP-45F)
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
EQUIVALENT CIRCUIT
Source Body Diode
Gate Protection Diode Gate
Drain
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