^Emi-Conductoi ^Products., One..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.S.A.
TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960
VHP push-pull power MOS transistor BLF278
FEATURES
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Broadcast transmitters in the VHP frequency range.
DESCRIPTION
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.
PINNING - SOT262A1 PIN
1 2 3 4 5
DESCRIPTION drain 1
drain 2 gate 1 gate 2 source
s T ^
3 Top view
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a push-pull common source test circuit.
MODE OF OPERATION CW, class-B
CW, class-C CW, class-AB
f (MHz)
108 108 225
VDS
(V) 50 50 50
PL (W) 300 300 250
GP (dB)
>20 typ. 18
>14 typ. 16
TlD
(%)
>60 typ. 80
>50 typ. 55
WARNING Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
N.I Semi-t onduclors reserves ih« right to change test conditions, parameter limits ;md package dimensions without notice
Information t'urrmhed by NJ Scmi-t on Juctort it believed to he both accurate and reliable <u the lime at going to press. However \ Vim•(. oiiduUors .bsiunes uu rcvfx.nisibiliiy lor ;my errors «r omissions discovered in its ti.se NJ Seim-t.oiiJtMi r
i ii';timcrs hi vail\« tlniashcets ire current helbrc plnciiia nriten
VHP push-pull power MOS transistor BLF278
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor section VDS
VGS ID Plot
Tstg Tj
drain-source voltage gate-source voltage drain current (DC) total power dissipation
storage temperature junction temperature
Tmb £ 25 °C; total device; both sections equally loaded
- - -
—
-65 -
125
±20 18 500
150 200
V V A W
°C
°C
THERMAL CHARACTERISTICS SYMBOL
Rth j-mb
Rth mb-h
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
CONDITIONS total device; both sections equally loaded.
total device; both sections equally loaded.
VALUE max. 0.35
max. 0.15
UNIT K/W
K/W
100
'D
(A)
10
1
Total de\) Curr
(2) Tmb
MRAHiS
(1) /
//*
_ . . /
~\
V V(2)
s
10 100 500
VDS (V)
nee, both sections equally loaded, ent is this area may be limited by Roson-
= 25 °C.
Fig.2 DC SOAR.
500
ptot (W)
400
300
200
100
0
Total de\) Con
(2) Sho
MGE6W
^
^
"^
'Sv^ X
<1)
^^s.
\^(2)
^v
\^v^^
^x
•V,.
"•v
40 80 120 160 Th (°C)
ice; both sections equally loaded, inuous operation,
•t-time operation during mismatch.
Fig. 3 Power derating curves.
VHP push-pull power MOS transistor BLF278
CHARACTERISTICS
Ti = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor section
V(BR)DSS
IDSS IGSS VoSth AVGS
9fs
9fsi/gfs2
RDSOP bsx
c
isCQS
c
rs Cd-fdrain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of both sections
forward transconductance forward transconductance ratio of both sections
drain-source on-state resistance drain cut-off current
input capacitance output capacitance feedback capacitance drain-flange capacitance
VQS = O; ID = 100mA VGS = 0; VDS = 50 V VGS = ±20 V; VDS = 0 VDS = 10V; ID = 50mA VDS = 10V; ID = 50mA VDS = 10V;ID = 5A VDS = 10V;ID = 5 A VGs = 10V;lD = 5A VGS = 10V; VDS = 10V VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz VGS = 0; VDS = 50 V; f = 1 MHz
125 - - 2
—
4.5 0.9
- - - - - -
- - - -
—
6.2
—
0.2 25 480 190 14 5.4
- 2.5 1 4.5 100
- 1.1
0.3 - - - - -
V mA HA V mV S
ii A PF PF PF PF
VQS group indicator
GROUP
A B C D E F G H J K L M N
LIMITS (V) MIN.
2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2
MAX.
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3
GROUP
O P Q R S T U V W X Y Z
LIMITS (V) MIN.
3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4
MAX.
3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5
