2SK3304

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MOS FIELD EFFECT TRANSISTOR

2SK3304

SWITCHING

N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION

The 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply.

FEATURES

• Low gate charge :

QG = 44 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.0 A)

• Gate voltage rating : ±30 V

• Low on-state resistance :

RDS(on) = 2.0 Ω MAX. (VGS = 10 V, ID = 4.0 A)

• Avalanche capability ratings

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C)

Drain to Source Voltage VDSS 900 V

Gate to Source Voltage VGSS(AC) ±30 V

Drain Current (DC) ID(DC) ±7 A

Drain Current (Pulse)^Note1 ID(pulse) ±21 A

Total Power Dissipation (T^C = 25°C) P^T 130 W Total Power Dissipation (TA = 25°C) PT 3.0 W

Storage Temperature Tstg –55 to + 150 °C

Single Avalanche Current^Note2 IAS 7 A

Single Avalanche Energy^Note2 EAS 147 mJ

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %

2. Starting T^ch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3304 TO-3P

(TO-3P)

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ELECTRICAL CHARACTERISTICS (T

A

= 25 °C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Drain Leakage Current IDSS VDS = 900 V, VGS = 0 V 100 µA

Gate to Source Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA

Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1.0 mA 2.5 3.5 V Forward Transfer Admittance | yfs| VDS = 20 V, ID = 4.0 A 2.5 4.7 S Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 4.0 A 1.6 2.0 Ω

Input Capacitance Ciss 1300 pF

Output Capacitance Coss 240 pF

Reverse Transfer Capacitance Crss

VDS = 10 V VGS = 0 V f = 1 MHz

55 pF

Turn-on Delay Time td(on) 20 ns

Rise Time tr 44 ns

Turn-off Delay Time td(off) 73 ns

Fall Time tf

VDD = 150 V ID = 4.0 A VGS(on) = 10 V RG = 10 Ω, R^L ≅ 36 Ω

45 ns

Total Gate Charge QG 44 nC

Gate to Source Charge QGS 6 nC

Gate to Drain Charge QGD

VDD = 450 V VGS = 10 V ID = 7.0 A

28 nC

Body Diode Forward Voltage VF(S-D) IF = 7.0 A, VGS = 0 V 1.0 V

Reverse Recovery Time trr 2.4 µs

Reverse Recovery Charge Qrr

IF = 7.0 A, VGS = 0 V

di/dt = 50 A/µs 13.5 µC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

RG = 25 Ω 50 Ω PG.

L

VDD

VGS = 20 → 0 V

BVDSS

IAS

ID

VDS

Starting Tch

VDD

D.U.T.

TEST CIRCUIT 3 GATE CHARGE

TEST CIRCUIT 2 SWITCHING TIME

PG. RG

0 VGS

D.U.T.

RL

VDD

τ = 1 sµ Duty Cycle ≤ 1 %

VGS Wave Form

ID Wave Form

VGS

10 %

VGS(on) 90 %

010 % ID

90 % 90 %

td(on) tr td(off) tf 10 % τ

ID

0

ton toff

PG. 50 Ω

D.U.T.

RL

VDD

IG = 2 mA

(3)

TYPICAL CHARACTERISTICS (T

A

= 25 °C)

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

TC - Case Temperature - °C

dT - Percentage of Rated Power - %

0 20 40 60 80 100 120 140 160 20

40 60 80 100

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

TC - Case Temperature - °C

PT - Total Power Dissipation - W

0 20 40 60 80 100 120 140 160 140

120 100 80 60 40 20

FORWARD BIAS SAFE OPERATING AREA

VDS - Drain to Source Voltage - V ID - Drain Current - A 1

0.1 10 100

1 10 100 1000

T^C = 25˚C Single Pulse

R^DS(on) Limited (at V

GS = 10 V)

PW =100 µs 1 ms 10 ms Power Dissipation Limited

ID(pulse) = 21 A

100 ms I^D(DC) = 7 A

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

VDS - Drain to Source Voltage - V

ID - Drain Current - A

0 8 12 16 20

8 10

4

Pulsed VGS = 6 V 6

4

2

V^GS = 10 V V^GS = 20 V

FORWARD TRANSFER CHARACTERISTICS

V^GS - Gate to Source Voltage - V

0.1

0.01 1 10 100

0 5 10 15

Pulsed TA = 125˚C

75˚C 25˚C

−25˚C

(4)

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

PW - Pulse Width - s

rth(t) - Transient Thermal Resistance - ˚C/W

10

0.001 0.01 0.1 1 100 1000

0.001 0.01 0.1 1 10 100 1000

0.0001

TC = 25˚C Single Pulse Rth(ch-A)= 41.7 ˚C

Rth(ch-C)= 0.96 ˚C

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

I^D - Drain Current - A

| yfs | - Forward Transfer Admittance - S V^DS = 20 V

Pulsed 1

0.1 10

1 10 100

100 0.1

TA = −25˚C 25˚C 75˚C 125˚C

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

VGS - Gate to Source Voltage - V

RDS(on) - Drain to Source On-state Resistance - Ω

0 5 10 15 20 25 Pulsed 5.0

4.0

3.0

2.0

1.0

0.0

ID = 7 A ID = 4 A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

4.0

1 0.01 0.1

6.0 8.0

10 100

0.0 2.0

Pulsed VGS = 10 V

GATE TO SOURCE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

VGS(off) - Gate to Source Cut-off Voltage - V

−50 0 50 100

VDS = 10 V I^D = 1.0 mA

150 0.0

1.0 2.0 3.0 4.0 5.0

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DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

−50 0 50 100 150

I^D = 4.0 A 5.0

4.0

3.0

2.0

1.0

0.0

V^GS = 10 V

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

VSD - Source to Drain Voltage - V

ISD - Diode Forward Current - A

0.1 0.0 1 10 100

0.5

Pulsed

1.0 1.5

VGS = 10 V

VGS = 0 V

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

Ciss, Coss, Crss - Capacitance - pF

10

1 100 1000 10000

10 100 1000

VGS = 0V f = 1 MHz

1

Ciss

Coss

Crss

SWITCHING CHARACTERISTICS

I^D - Drain Current - A

td(on), tr, td(off), tf - Switching Time - ns

10.1 10 100 1000

1 10 100

VDD = 150 V VGS = 10 V RG = 10 Ω td(off)

t^d(on)

tr

t^f

REVERSE RECOVERY TIME vs.

DRAIN CURRENT

IF - Drain Current - A

trr - Reverse Recovery Time - ns

di/dt = 50 A / VGS = 0 V

µs 100.1

1 10 100

1000 10000

100

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

QG - Gate Charge - nC

0 10 20 30 60

800

600

400

200

VDD = 450 V 300 V 150 V

ID = 7.0 A 14 12 10 8 6 4 2 40 50 0 VDS

VGS

VGS - Gate to Source Voltage - V

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SINGLE AVALANCHE CURRENT vs.

INDUCTIVE LOAD

L - Inductive Load - H

IAS - Single Avalanche Current - A

1 10 100

VDD = 150 V VGS = 20 V → 0V RG = 25 Ω Starting T^ch = 25˚C

IAS = 7.0 A

0.0001 0.001 0.01 0.1

0.1

EAS

= 147 mJ

SINGLE AVALANCHE ENERGY vs STARTING CHANNEL TEMPERATURE

Starting Tch - Starting Channel Temperature - ˚C

EAS - Single Avalanche Energy - mJ

25 50 75 100

150

125

100

75

50

25

0 125 150

VDD = 150 V RG = 25 Ω VGS = 20 V → 0 V ID(peak) = IAS

175 EAS = 147 mJ

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PACKAGE DRAWING (Unit : mm)

TO-3P (MP-88) EQUIVALENT CIRCUIT

Remark Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.

15.7 MAX.

3.2±0.2

4.7 MAX.

1.5 TYP.

7.0 TYP.

2.8±0.1 1.0±0.2 0.6±0.1

2.2±0.2

5.45 TYP. 5.45 TYP.

18.7±0.44.5±0.2

1.0 TYP.5.0 TYP.3.4 MAX.

19 MIN.20.5 MAX.

1: Gate 2: Drain 3: Source 4: Fin (Drain)

1 2 3

4

Source Body Diode Gate

Drain

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M8E 00. 4

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(Note)

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