KSC5024

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October 2008

KSC5024

NPN Silicon Transistor

• High Voltage and High Reliabilty

• High Speed Switching

• Wide SOA

Absolute Maximum Ratings*

^Ta = 25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics*

^Ta=25°C unless otherwise noted

Symbol Parameter Ratings Units

V_CBO Collector-Base Voltage 800 V

V_CEO Collector-Emitter Voltage 500 V

V_EBO Emitter- Base Voltage 7 V

I_C Collector Current (DC) 10 A

I_CP Collector Current (Pulse) 20 A

I_B Base Current 3 A

P_C Collector Dissipation (T_C=25°C) 90 W

T_J Junction Temperature 150 °C

T_STG Storage Temperature - 55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV_CBO Collector-Base Breakdown Voltage I_C = 1mA, I_E= 0 800 V

BV_CEO Collector-Emitter Breakdown Voltage I_C = 5mA, I_B= 0 500 V

BV_EBO Emitter-Base Breakdown Voltage I_E= 1mA, I_C = 0 7 V

V_CEX(sus) Collector-Emitter Sustaining Voltage I_C= 3.5A, I_B1=-I_B2=1.4A L = 500mH, Clamped

500 V

I_CBO Collector Cut-off Current V_CB= 500V, I_E= 0 10 mA

I_EBO Emitter Cut-off Current V_EB= 5V, I_C = 0 10 mA

h_FE1 h_FE2

DC Current Gain V_CE= 5V, I_C= 0.8A

V_CE=5V, I_C= 4A

15 8

50

V_CE(Sat) Collector-Emitter Saturation Voltage I_C= 4A, I_B= 0.8A 1 V

V_BE(Sat) Base-Emitter Saturation Voltage I_C= 4A, I_B= 0.8A 1.5 V

C_ob Output Capacitance V_CB= 10V, I_E=0, f = 1MHz

120 pF

f_T Current Gain Bandwidth Product V_CE= 10V, I_C=0.8A 18 MHz

t_on Turn On Time V_CC= 200V

I_C= 5I_B1=-2.5I_B2=5A R_L = 40W

0.5 ms

t_s Storage Time 3 ms

t_f Time Fall Time 0.3 ms

TO-3P 1

1.Base 2.Collector 3.Emitter

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KSC5024 Rev. 1.0.0 2

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

Figure 5. Switching Time Figure 6. Safe Operating Area

0 2 4 6 8 10 12

IB = 1.6A IB = 1.4A

IB = 800mA IB = 1A IB = 1.2A

IB = 600mA IB = 500mA I_B = 400mA IB = 300mA IB = 200mA IB = 100mA IB = 50mA IB = 0 IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

0.01 0.1 1 10

1 10 100 1000

VCE = 5V

hFE, DC CURRENT GAIN

IC[A], COLLECTOR CURRENT

0.01 0.1 1 10

IC = 5 IB

VCE(sat) VBE(sat)

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

0 1 2 3 4

VCE = 5V

VBE[V], BASE-EMITTER VOLTAGE

0.1 1 10

0.01 0.1 1

10 IC=5.IB

tF

tON

tSTG

tON, tSTG, tF [ms], TIME

1 10 100 1000

0.01 0.1 1 10 100

50ms 100_m 1ms s 10ms

DC I_C(max).(Pulse)

IC(max)

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C 50 2 4 — N P N S ili c o n T ra n s is to r Typical Characteristics

(Continued)

Figure 1. Reverse Bias Safe Operating Area Figure 2. Power Derating

10 100 1000 10000

0.01 0.1 1 10 100

0 25 50 75 100 125 150 175

0 10 20 30 40 50 60 70 80 90 100

PC[W], POWER DISSIPATION

TC[^oC], CASE TEMPERATURE

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KSC5024 Rev. 1.0.0 4

Package Dimension (TO-3P)

NOTES:

A) THIS PACKAGE CONFORMS TO EIAJ SC-65 PACKAGING STANDARD.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONING AND TOLERANCING PER ASME14.5 1973.

D) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS.

E) DRAWING FILE NAME: TO3P03AREV2.

15.80 15.40

5.204.80

20.10 19.70

3.703.30

20.30 19.70

1.651.45 5.004.60

5.45 5.45

1.200.80 1.802.20

3.202.80

0.750.55 2.602.20

1 3

18.90 18.50

(1.85)

(R0.50)

(R0.50) 0.55

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