20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.SA
TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960
Silicon Controlled Rflctlften 2N3228, 2N3525, 2N4101
5-A Silicon Controlled Rectifiers
For Low-Cost Power-Control and Power-Switching Applications Feature*
• High dl/dt and dvldt capabilities
• Low leakage currents, both forward and reverse
• Low forward voltage drop at high current levels
• Low thermal resistance
TERMINAL DESIGNATIONS
JEOECTO-31JAA
Types 2N3228. 2N3525, and 2N4101 use the JEDEC TO-66 package and have a blocking voltage capability of up to 600 volts and a forward currant rating of 5 amperes (rms value) at a case temperature of T5°C.
•Formerly Dev. Types MI222, MI225, and TA2773. respectively.
ABSOLUTE-MAXIMUM RATINGS, lor Operation with Sinusoidal AC Supply Voltage at a Frequency between 50 and 400 Hz, and with Resistive or Inductive Load.
ZN32M 2N3S2S 2N4101 Transient Peak Reverse Voltage (Non-Repetitive), VRU (non-rep) 330
Peak Reverse Voltage (Repetitive), vnM (rep) 200 Peak Forward Blocking Voltage (Repetitive), v,BOU (rep) 200 Forward Current: For case temperature (T<j of + 75*0, and unit mounted on heat sink
Average DC value at a conduction angle of 180*, !Fw • • 3,2
RMS value, I,RMS SO
For free-air temperature (Trf) of 25" C, and with no heat sink employed—
Average DC value at a conduction angle of 180*. IFAV 1 7
For other conditions, See Fig. 2
Peak Surge Current, IFM (surge); For one cycle 01 applied principal voltage.
60 Hz (sinusoidal). Tc = 75- C 50 Hz (sinusoidal), Tc » 75'C
For more than one cycle of applied voltage, See Fig. 5 Fusing Current (for SCR protection):
Tj = -40 to 100' C. I = 1 to 8.3 na. I2t Rale of Change of Forward Current, dl/dl IOI = 200 mA, 0.5 /is rise time
Gate Power1: Peak, Forward or Reverse, for 10 /us duration, POM
Average, POAV ,
Temperature;
Storage, T,4 — —
Operating (Case). Tc
'Any values of peak gate current or peak gate voltage to give the maximum gate power Is permissible 660 400
•400 3.2 5.0 1.7
60 SO
. 15 . .200'.
. 13 . 0.5 .
700 SCO 600
3.2 S.O
. -4010+125 . . -40 to -1-100 .
. A'j . A///S
. W . W . 'C . 'C
NJ Seini-Condtictors reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information tumished hy NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However N.I Semi-Conductors assumes no responsibility for any errors or omissions Jiscovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
2N3228, 2N3525, 2N4101
Cheneter/stlcs et Maximum Rellngt (unless otherwise specified), end el Indicated Ceie Temperature (rc) CHARACTERIiTICS
roiMrt ftttitvu Velup , »j0tt, A I T c - .IWC
Pitt Blocking CvllMt, al TC * * IOOPC:
VF80U 'MO1"1"1- *"""
VR80I" V(M<»»> «'"«
Forwiid Voltlje Owg, »F
Ad Foimtf Cgntnl ol 10 imptill Hid » TJ " .}5°C DC Galt-Tn||ei Cuntnt, IQT
*!!(;• .?S»C Cit(.Tli(|tl Volljft. VCT
Al TQ. .?i°C HDId«| Cuuinl, !HOO
AIIc« -?i°C
Cutcil Dili «l Awlici) Fonnid Vollij!.
Cnlicil «v/«
Vf g ' VBOO'"'11' v>lu<>. ciponcnltll rise, TC. ,ioo«C
Tu't-Ofl Time lp| iCelly Tinl • Rilf Tfmet r .
VFB • VBoo
1"
1". *>
l»«
|.
!r * <.*>«(*'«.
IQJ > 200«A. 0.1^1 1 llu lime. TC • >2S°C
lum-QII TIM. I0|(. . . . ,'
if • 7 jmptiK. SGjtSpuIlt width, dufB/dl ' ?0v//is.
di,/dl • lOA/,11. ICT ' ?OOmA. Tc • -WC
Theinl RHiilutf 1 jMcllon-to-c»«
Junct!on>to<*aniDienl
COMTROLLCD.ftCCTIFiei TYCES .1NUM
Urn.
200
10
(US
- T»P.
0.10
o.os
MS
a
1.2
Id
2M
11
IS
- Vll.
I,S
ais
!.«
IS
?.D
20
SO
4 40
JN35J5 Mm.
<oa
10
0.7S
—
Typ.
O.M
0.10
MS
1
1.2
id 200
I.S
IS
— Nil.
3.0
I.S
It
IS
2.0
10
SO
4 40
,3*4101.
Mm.
600
10
o.?s
- T»p.
O.M
O.H
MS
8
1.2
to
200
I.S
IS
— Mil.
1.0
2.0
M
IS
2.0
20
SO
4 40
UNITS
Hl|!
nA
nA
VO'.U
mA(itc)
oollt(ilc) HA
.oln/
mienHtond nJciQifcaids
micio»tondi
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CONOUCIIOM AHCLt_t \tV
