HIGH VOLTAGE SILICON POWER TRANSISTOR
■
SGS-THOMSON PREFERRED SALESTYPE
■
NPN TRANSISTOR
■
HIGH VOLTAGE CAPABILITY (450V V
CEO)
■
MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
■
HIGH DC CURRENT GAIN
APPLICATIONS
■
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUX87 is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
3 21
SOT-32
THERMAL DATA
R
t hj-ca seR
t hj- ambThermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.12 100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case= 25
oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it
I
CEVCollect or Cut-off Current (V
BE= -1.5V)
V
CE= 1000 V
V
CE= 1000 V T
j= 125
oC
100 1
µA
mA I
EBOEmitt er Cut-off Current
(I
C= 0)
V
EB= 5 V 1 mA
V
CEO (sus)Collect or-Emitter Sustaining Voltage
I
C= 100 mA 450 V
V
BEOCollect or-Base Sustaining Voltage
I
C= 10 mA 5 V
V
CE(sat )∗Collect or-Emitter Saturat ion Voltage
I
C= 0. 1 A I
B= 0.01 A I
C= 0. 2 A I
B= 0.02 A
0.8 1
V V V
BE(s at)∗Base-Emitt er
Saturat ion Voltage
I
C= 0. 2 A I
B= 0.02 A 1 V
h
FE∗DC Current G ain I
C= 50 mA V
CE= 5 V
I
C= 40 mA V
CE= 5 V 12
50
f
TTransit ion F requency I
C= 50 mA V
CE= 10 V f =1MHz 20 MHz
t
st
fRESI STIVE LO AD St orage Time Fall T ime
V
CC= 250 V I
C= 200 mA I
B1= 40 mA I
B2= -80 mA
t
p= 20
µs4.5
0.5
µsµs
∗ Pulsed: Pulse duration = 300µs, duty cycle 1.5 %