• Nie Znaleziono Wyników

FAST SWITCHING THYRISTORS

N/A
N/A
Protected

Academic year: 2022

Share "FAST SWITCHING THYRISTORS"

Copied!
6
0
0

Pełen tekst

(1)

r Z Z S G S - T H O M S O N

^ 7 # T G F 148 - 600 B - ► 1200 B

FAST SWITCHING THYRISTORS

■ GLASS PASSIVATED CHIP

■ HIGH STABILITY AND RELIABILITY . EXCELLENT SURGE CAPABILITY

■ HIGH di/dt AND dv/dt RATINGS

■ tq < 40 |JS

DESCRIPTIO N

SCR designed for high frequency power switching applications.

ABSOLUTE RATINGS (limiting values)

S y m b o l P a r a m e te r V a lu e U n it

It ir m s) RMS o n -sta te C u rre n t (1) T 0 = 65 °C 63 A

It(a v) M ean o n -sta te C u rre n t (1) T c = 65 °C 40 A

Itsm Non R ep e titive S u rge P eak o n -sta te C u rre n t t = 8.3 ms 700 A

(Tj

initial < 125 °C) (2) t = 10 ms 670

l2t l2t V a lu e fo r Fusing t = 10 ms 2 24 5 A 2s

d i/d t C ritical R ate o f Rise o f o n -sta te C u rre n t (3) 200 A/gs

T stg S to ra g e a nd O p e ra tin g Ju nction T e m p e ra tu re R ange - 4 0 to 150 °C

T i - 4 0 to 125 °C

S y m b o l P a r a m e te r

T G F 1 4 8 -

U n it 6 0 0 B 7 0 0 B 8 0 0 B 9 0 0 B 1 0 0 0 B 1 1 0 0 B 1 2 0 0 B Vdrm

Vrrm

R epetitive P eak o ff-sta te V o ltage (4) 600 700 800 9 00 1000 1100 1200 V

(1) Single phase circuit, 180° conduction angle.

(2) Half sine wave.

(3) lG = 1 A dio/dt = 1 A/|is.

(4) Tj = 125 °C .

TH ERM AL R ESISTANCES

S y m b o l P a r a m e te r V a lu e U n it

Rth (j-c) Ju nctio n -case fo r D.C. 0.61 °C /W

Rth (c-h) C o n ta ct (ca se to heatsink) 0.30

°c/w

February 1989 1/6

(2)

G ATE C H A R A C T E R IS T IC S (m axim um values)

PGM = 80 W (tp = 500 ns) I

fgm

= 10 A (tp = 500 ns) V

rgm

= 5 V

P

g(AV) =

2 W V

fgm= 1

5 V (tp

=

500 ns)

E LE C TR IC AL C H A R A C T E R IS T IC S

S y m b o l T e s t C o n d it io n s M in . T y p . M a x . U n it

Igt Tj = 2 5 °C V D = 12 V Rl = 3 3 Q Pulse D uration > 20 ps

150 mA

Vgt T , = 2 5 °C V D = 1 2 V R L = 3 3 f i Pulse D uration > 2 0 ps

1.5 V

Vgd T j = 125 °C Vq = Vqrm Rl = 3.3 kQ 0.2 V

Ih T j = 2 5 °C l j = 5 0 0 m A G a te O pen 2 00 mA

I I T j = 2 5 °C V D = 1 2 V lG = 3 0 0 m A Pulse D uration > 2 0 ps

4 0 0 mA

Vtm Tj = 2 5 °C Ij m= 5 0 0 A t p = 1 0 m s 4 V

Idrm T j = 1 2 5 ° C Vdrm S p e cified 12 mA

Irrm T j = 125 °C V RRM S p e cified 12 mA

*gt Tj = 2 5 °C Vd = Vdrm It = 5 0 0 A Ig = 1 A d io /d t = 10 A /jis

2 ps

tq T j = 1 2 5 °C l T = 5 0 0 A Vr= 5 0 V

Vd = 6 7 % Vdrm d i/d t = 3 0 A/ps d v /d t = 2 0 V/ps G a te O pen

40 ps

d v/d t* T j = 1 2 5 ° C G a te O pen L in e a r S lope up to V D = 6 7 % V DRM

2 0 0 V/ps

* For higher guaranteed values, please consult us.

P A C K A G E M E C H A N IC A L DATA TO 65 Metal

0 3,8 min

Cooling method : by conduction (method C) Marking : type number

W eight: 19 g without accessories Polarity : anode to case

Stud torque : 3.5 mAN min - 3.8 mAN max.

2/6

SGS-THOMSON

^ 7 # Ri80ieia®auKEiris®iMBigs

(3)

TGF 148-600B -> 1200B

SINUSOIDAL CURRENT PULSE DATA

iO 102 103

PULSE WIDTH. tp (ps)

PARAMETER : F (Hz)

100 400 1000 2500 5000

10000

FI6.2 - MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VERSUS P1LSE WIDTH FOR Tc - 85 *C.

10 102 103

PULSE WIOTH. tp (ps)

PARAMETER : F (Hz)

100 400 1000 2500 5000

10000

FIG.3 - M A XI M* ALLOWABLE PEAK ON-STATE CURRENT VERSUS M L S E WIDTH FOR Tc - 90 *C.

NOTES :

1. VD = Vq = BOO Volts_

2. fl.C Snubber. C = O.lpF.

n - 33 n .

r z

7 SCS-THOMSON

^ 7 # M c n e & a c n i M K S

3/6

(4)

TRAPEZOIDAL CURRENT PULSE DATA

PULSE WIDTH. tp (ps) FIB.4 - ENER6Y R L 5 FOR TRAf^ZOIIUL PULSES.

PARAMETER : I t m<a)

1000 800 600 400 300 200 150 100 70 50

10 102 103

PULSE WIDTH, tp (ps)

PARAMETER : F (Hz)

100 400 1000 2500 5000

FI6.B - MAXI M* Ail ARABLE PEAK ON-STATE OIVENT VERSUS

10

PARAMETER F (Hz)

100 400 1000 2500

102

PULSE WIDTH. (ps) iO3

FIB.8 - MAXIMUM Al LOMABLE « A K ON-STATE OIVCN7 VERSUS PULSE WIDTH FOR T0 - 90 *0.

di/dt = 100 A/ps

^ d i / d t A ITH

fcP

NOTES :

1. V0 * VH - BOO Volts.

2. R.C SnubOer, C * 0.1 (J F.

R = 33 n .

£ Z

T SGS-THOMSON

“ T# Micmnjieniotnc*

4/6

(5)

INSTANTANEOUSON-STATECURRENT,

TGF 148-600B -> 1200B

INSTANTANEOUS ON-STATE VOLTAGE, VT (V) F IB .7 - tUXIMW ON-STATE COOUCTION

CHARACTERISTIC (T j - 125 * 0 .

PULSE BASE WIDTH, t (ms) F IS .B - NON H tm in V E SUB-CYCLE SURGE ON-STATE CUHFENT AM) l^t RATING

(IN IT IA L T j - 125 * 0 .

FIS.B

NUMBER OF CYCLES (at 50 Hz)

nim KFcrrrivE turn

k m

on - state e w e r

OF CYCLES.

[ Z

7 SCS-THOMSON

“ •T # M cn im jicvw sM ie s

5/6

(6)

FIE. 10 - RELATIVE VARIATION OF BATE TRI66ER CURRENT AND HOLDING CURRENT VERSUS JUNCTION TEMPERATURE.

GATE CURRENT. Ig (A) FIG. 11 - BATE TRIGGER CHARACTERISTICS.

6/6

r z 7 SCS-THOMSON

MKMMLOCTIIiMIICS

Cytaty

Powiązane dokumenty

Fig 5 - Helative variation of gate trigger Fig 6 - Non repetitive surge peak on-state current and holding current versus current versus number of cycles,. junction

Fig.5 - Relative variation of gate trigger Fig.B Non repetitive surge peak on-state current and holding current versus current versus number of cycles,. junction

Fig.5 - Relative variation of gate trigger Fig.B - Non repetitive surge peak on-state current and holding current versus current versus number of cycles,. junction

RATE OF RISE OF TURN OFF GATE

Fig-7 : Relative variation of thermal transient impedance Fig.8 : Relative variation of thermal transient impedance junction to case versus

Fig-4 : Relative variation of thermal transient impedance junction to case versus pulse duration. Fig-6 : Junction capacitance versus reverse voltage

PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction

drain-source voltage gate-source voltage drain current (DC) total power dissipation. storage temperature