DATA SHEET
Product specification
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
1996 May 03 DISCRETE SEMICONDUCTORS
BB112
AM variable capacitance diode
alfpage
M3D053
1996 May 03 2
Philips Semiconductors Product specification
AM variable capacitance diode BB112
FEATURES
• Matched to 3%
• Leaded plastic package
• C8.5: 23 pF; ratio: 21.
APPLICATIONS
• Electronic tuning in AM radio applications
• VCO.
DESCRIPTION
The BB112 is a variable capacitance diode, fabricated in planar
technology, and encapsulated in the SOD69 (TO-92 variant) leaded plastic package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
VR continuous reverse voltage − 12 V
IF continuous forward current − 50 mA
Tstg storage temperature −55 +125 °C
Tj operating junction temperature −55 +85 °C Fig.1 Simplified outline (SOD69; TO-92 variant) and symbol.
handbook, halfpage
MAM222 k
a
ELECTRICAL CHARACTERISTICS Tj= 25°C; unless otherwise specified.
Notes 1. VR = 1 V.
2. For a set of 3 diodes.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IR reverse current VR= 12 V; see Fig.3 − − 50 nA
VR= 12 V; Tj= 85°C; see Fig.3 − − 300 nA
rs diode series resistance f = 500 kHz; note 1 − − 1.5 Ω
Cd diode capacitance VR= 1 V; f = 1 MHz; see Figs 2 and 4 440 − 540 pF VR= 8.5 V; f = 1 MHz; see Figs 2 and 4 17 − 29 pF
capacitance ratio f = 1 MHz − 18 −
capacitance matching VR= 1 to 9 V; note 2 − − 3 %
Cd 1V( ) Cd 8.5V( ) ---
Cd
∆ Cd ---
1996 May 03 3
Philips Semiconductors Product specification
AM variable capacitance diode BB112
GRAPHICAL DATA
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
f = 1 MHz.
handbook, full pagewidth750
(pF)
250
0
10 MGC808
1 V
R (V) 10−1
500 Cd
Fig.3 Reverse current as a function of junction temperature; maximum values.
handbook, halfpage
100 0
10
MGC809
102 10
(nA) IR
3
20 40 60 80
Tj (oC)
Fig.4 Temperature coefficient of diode capacitance as a function of reverse voltage; typical values.
handbook, halfpage
MLC815
1 10 102
10 3
10 4
10 5 10 1 (K−1)
V (V)R TCd
1996 May 03 4
Philips Semiconductors Product specification
AM variable capacitance diode BB112
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Dimensions in mm.
Fig.5 SOD69 (TO-92 variant).
MBC879 4.8 2.54
max
k a 1.6
4.2 max
0.67
max dimensions within 2.5 max uncontrolled
12.7 min 5.2 max
0.49 max 0.40 min
