<Ss.mi-donau.ctoi , O ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.S.A.
TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960
Silicon PNP Power Transistor 2SA1041
DESCRIPTION
High Current Capability
•Good Linearity of hFE
Collector-Emitter Breakdown Voltage- : V(BR)CEo=-120V(Min.)
•Complement to Type 2SC2431
APPLICATIONS
•Designed for high speed, high voltage switching systems.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
VCBO
VCEO
VEBO
Ic
IB
PC
T;
Tstg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@TC=25'C
Junction Temperature
Storage Temperature
VALUE
-120
-120
-5
-15
-5
100
175
-65-175
UNIT
V
V
V
A
A
W
"C
c
PIN 1.BASE 2. BETTER 3. COLLECTOR (CASE) TO-3 package
r
U
V-
A t
• — r—N— j I j A — i
1. 1 1 r
I 1
-JU-D f»- L-»
fc.~
V
DIM A B
<•
D
£ G H K L N
&_
U V
^~^\L ^/ ,
•j}-"45 C
^^^ '
1^3
nun MIN MAX
3900 25.30
7.80 0.90 MO
266?
a .60
1 10 1 60 1092
S4&
11.3 a
1675 1940 400 30.00 430
1350 1705 1962 420 30^0 450
t , B
1
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon PNP Power Transistor 2SA1041
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specifiedSYMBOL
V(BR)CEO
V(BR)C8O
V(BR)EBO
vCE(sat)
VsE(sat)
ICBO
ICEO
IEBO
hpE-1
hFE-2
COB
fr
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Output Capacitance
Current-Gain—Bandwidth Product
CONDITIONS
lc= -10mA; RBE= r"
IC=-50/M;IE=0
lE=-1mA; lc=0
|c= -7A; IB= -0-7A
lc= -7A; IB= -0.7A
VCB=-120V; IE=0
VCE=-120V; IB=0
VEB= -4V; lc= 0
lc= -1 .5A; VCE= -5V
lc=-15A;VCE=-5V
|E=0;VC B=-10V;f= 1.0MHz
lc=-1A;Vce=-10V
MIN
-120
-120
-5
35
7
TYP.
350
60
MAX
-1.5
-1.8
-50
-1
-50
200 UNIT
V
V
V
V
V
^ A
niA
/ / A
pF
MHz
Switching Times
tr
'stg
tf
Rise Time
Storage Time
Fall Time
lc= -7.5A; IB1= -IB2= -0.75A;
RL=4Q
0.8
1.0
0.8
/IS
us
/.ts
