2N1613-2

rm.

20 STERN AVE.

SPRINGFIELD. NEW JERSEY 07081

U.SA

2N1613

2N1711 2N1893

TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-6960

NPN Silicon Transistor JEDEC TO-39 case

DESCRIPTION

2N1613, 2N1711, and 2N1893 are S i l i c o n NPN Planar E p i t a x i a l Transistors designed for small signal general purpose and switching applications.

MAXIMUM RATINGS (TA=25°C unless otherwise noted)

2N1613 2N17H 2N18_93 Collector-Base Voltage

Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage

Collector Current-Continuous Power Dissipation

Power Dissipation, TC=25°C Operating and Storage Junction Temperature

ELECTRICAL CHARACTER 1ST I r.$ (TA=25°C) Test Conditions

VCBO

VCEO

VEBO PT • c PT

Tj,Tstg

75 50-

7.0

75 - 50 7.0

§°§

3'°

-65 to +200°C 120 80 100 7.0

Vdc Vdc Vdc Vdc mAdcwatts watts

VCB=60V VCB=90V VEB=5.0V

IC=100uA IC=10mA

IC=10mA, RBE=10 OHMS lE=100uA

IC=50mA, !B=5mA lC=150mA, IB=15mA IC*50mA, lB=5mA IC^lSOmA, I 8=15mA VCE='OV, lc=10uA

VCE=IOV, ic VCE=IOV, VCE=IOV,

VCB'IOV, VBE=0.5-

Ic-500mA

50mA, f-20 MHz f=100 KHz , f=100 KHz

IC=300uA, f-1.0 KHz

2N1613 Mrn^ Max

10 - 10

75 50 7-0

-

35

25 30 12

2N1711 Min Max

10 - 5

75

7.0

-

ko

70 25 80 8.0

2N1893

- 10 10 120 80 100 7.0

1.2 5.0

0.9 1.3

- 35

**0 120 -50

15 85

U n i t nA nA nA V V V V V V V V

_ _

- -

MHz— P '

P ^dB

N.I Semi-Conductors reserves the right to change lest conditions, parameter limits and package dimensions without notice.

Information furnished by NJ Semi-Conductors is believed to be hoth accurate and reliable at the time of going to press However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customer'; to vcrifv that datasheets are current before placing orders.