BDP948

(1)

Semiconductor Group 1 Nov-28-1996 BDP 948

PNP Silicon AF Power Transistor

• For AF drivers and output stages

• High collector current

• High current gain

• Low collector-emitter saturation voltage

• Complementary type: BDP947, BDP949 (NPN)

Type Marking Ordering Code Pin Configuration Package BDP 948 BDP 948 Q62702-D1336 1 = B 2 = C 3 = E 4 = C SOT-223 BDP 950 BDP 950 Q62702-D1338 1 = B 2 = C 3 = E 4 = C SOT-223 Maximum Ratings

Parameter Symbol Values Unit

Collector-emitter voltage BDP 948

BDP 950

V_CEO

60 45

V

Collector-base voltage BDP 948

BDP 950

V_CBO

60 45

Emitter-base voltage V_EBO 5

DC collector current I_C 3 A

Peak collector current I_CM 5

Base current I_B 200 mA

Peak base current I_BM 500

Total power dissipation, T_S = 99°C P_tot 3 W

Junction temperature T_j 150 °C

Storage temperature T_stg - 65 ... + 150

Thermal Resistance

Junction ambient ¹⁾ R_thJA ≤ 42 K/W

Junction - soldering point R_thJS ≤ 17

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm² Cu

(2)

Electrical Characteristics at T_A=25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I_C = 10 mA, I_B = 0 mA, BDP 948 I_C = 10 mA, I_B = 0 mA, BDP 950

V_(BR)CEO

60 45

- -

V

Collector-base breakdown voltage

I_C = 100 µA, I_B = 0 , BDP 948 I_C = 100 µA, I_B = 0 , BDP 950

V_(BR)CBO

60 45

- -

Base-emitter breakdown voltage I_E = 10 µA, I_C = 0

V_(BR)EBO

5 - -

Collector cutoff current

V_CB = 45 V, I_E = 0 , T_A = 25 °C V_CB = 45 V, I_E = 0 , T_A = 150 °C

I_CBO

- -

20

100 nA

µA Emitter cutoff current

V_EB = 4 V, I_C = 0

I_EBO

- - 100

nA

DC current gain

I_C = 10 mA, V_CE = 5 V I_C = 500 mA, V_CE = 1 V I_C = 1 A, V_CE = 2 V

h_FE

50 85 25

- - -

- 475 -

-

Collector-emitter saturation voltage 1) I_C = 2 A, I_B = 0.2 A

V_CEsat

- - 0.5

V

Base-emitter saturation voltage 1) I_C = 2 A, I_B = 0.2 A

V_BEsat

- - 1.3

AC Characteristics Transition frequency

I_C = 50 mA, V_CE = 10 V, f = 100 MHz

f_T

- 100 -

MHz

Collector-base capacitance V_CB = 10 V, f = 1 MHz

C_cb

- 40 -

pF

1) Pulse test: t < 300µs; D < 2%

(3)

Total power dissipation P_tot = f (T_A*;T_S)

* Package mounted on epoxy

0 20 40 60 80 100 120 °C 150

T_A,T_S 0.0

0.4 0.8 1.2 1.6 2.0 2.4 W 3.2

P_tot

T_S T_A

Permissible Pulse Load R_thJS = f(t_p)

10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 10 ^-1s 10 ⁰ t_p 10 -2

10 -1

10 0

10 1

10 2

10 3

K/W

R_thJS

D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Permissible Pulse Load P_totmax / P_totDC = f(t_p)

10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 10 ^-1s 10 ⁰ t_p 10 0

10 1

10 2

10 3

- P_totmax/P_totDC

D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

DC current gain h_FE = f (I_C) V_CE = 2V

10 ⁰ 10 ¹ 10 ² 10 ³ mA I_C 10 0

10 1

10 2

10 3

- h_FE

-50°C 25°C 100°C

(4)

Collector cutoff current I_CBO = f (T_A) V_CB = 45V

0 20 40 60 80 100 120 °C 150

T_A 10 -1

10 0

10 1

10 2

10 3

10 4

10 5

nA

I_CBO

max

typ

Collector-emitter saturation voltage I_C= f (V_CEsat), h_FE = 10

0.0 0.1 0.2 0.3 V 0.5

V_CEsat 10 0

10 1

10 2

10 3

10 4

mA

I_C

-50°C 25°C 100°C

Base-emitter saturation voltage I_C = f (V_BEsat), h_FE= 10

0.0 0.2 0.4 0.6 0.8 1.0 V 1.3

V_BEsat 10 0

10 1

10 2

10 3

10 4

mA

I_C

-50°C 25°C 100°C

Collector current I_C = f (V_BE) V_CE = 2V

0.0 0.2 0.4 0.6 0.8 1.0 V 1.3

V_BE 10 0

10 1

10 2

10 3

10 4

mA

I_C

-50°C 25°C 100°C