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1N5719

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20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.SA

TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960

1N5719

DESCRIPTION:

The1N5719 is a Silicon PIN Diode Designed for General Purpose

Attenuator and Switching Applications from 100 MHz to 3 GHz.

MAXIMUM RATINGS

IF

VR

PDISS Tj TSTG

Ojc

100mA 150V

250 mW @ T

A

= 25 ° -65

-65

0

o

C to +200 C to +200

°C

°C C

0.7°C/mW

PACKAGE STYLE 01

1.0 MIN (254) 2 PLACES

CATHODE BAND

.075(1.9051 .065(1.651)

016(406) 014 (.355)

.165(4.191) .145(3.683)

CHARACTERISTICS T

c

= 2

5

°c SYMBOL

VBR CT

Rs

T trr

TEST CONDITIONS

!

R

= 10(xA

V

R

= 1 0 0 V f = 1.0 MHz IF = 100mA f= 100 MHz

IF = 50 mA I

R

= 250 mA V

R

= 10V f = 20mA

MINIMUM 150

100

TYPICAL

100

MAXIMUM

0.3

1.25

UNITS V PF

ii

^s us

NJ Semi-Condiictors reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However N.I Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use. N.I Semi-Coiuluctors encourages customers to verity that datasheets are current before placing orders.

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