FAST RECOVERY RECTIFIER DIODES
DIMENSIONS Millimeters Inches
Min. Max. Min. Max.
A 11.80 12.20 0.465 0.480 B 8.90 9.10 0.350 0.358 C 1.95 2.05 0.077 0.081 D 0.75 0.85 0.029 0.034 E 12.60 12.80 0.496 0.504 F 25.10 25.50 0.988 1.004 G 31.50 31.70 1.240 1.248
H 4.00 0.157
I 4.10 4.30 0.161 0.169 J 4.10 4.30 0.161 0.169 K 14.90 15.10 0.586 0.595 L 30.10 30.30 1.185 1.193 M 37.80 38.20 1.488 1.504 O 7.80 8.20 0.307 0.323
P 5.50 0.216
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1996 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia Brazil Canada China France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco -The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
- Recommended torque value : 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the heatsink and the 4 screws given with the screw version).
- The screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min and 2.2 mm max.
BYT230PIV-1000 / BYT231PIV-1000
5/5
BYT230PIV-400 BYT231PIV-400
August 1996 - Ed : 2A
FAST RECOVERY RECTIFIER DIODES
VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE :
Insulating voltage = 2500 VRMS
Capacitance = 45 pF
DESCRIPTION FEATURES
Dual high voltage rectifiers ranging from 200V to 400V suited for Switch Mode Power Supplies and other power converters.
The devices are packaged in ISOTOP.
ISOTOPTM (Plastic)
Symbol Parameter Value Unit
IFRM Repetitive peak forward current tp≤10µs 500 A
IF(RMS) RMS forward current Per diode 50 A
IF(AV) Average forward current Tc=75°C
δ= 0.5
Per diode 30 A
IFSM Surge non repetitive forward current tp=10ms sinusoidal
Per diode 350 A
Tstg
Tj Storage and junction temperature range - 40 to + 150 - 40 to + 150
°C°C ABSOLUTE MAXIMUM RATINGS
Symbol Parameter BYT230PIV- / BYT231PIV- Unit
200 300 400
VRRM Repetitive peak reverse voltage 200 300 400 V
TM : ISOTOP is a trademark of SGS-THOM SON Microelectronics.
K2 A2
A1 K1
BYT231PIV-400
A2 K1
A1 K2
BYT230PIV-400
1/5
Symbol Test Conditions Min. Typ. Max. Unit
VF * Tj = 25°C IF= 30 A 1.5 V
Tj= 100°C 1.4
IR ** Tj= 25°C VR= VRRM 35 µA
Tj= 100°C 6 mA
Pulse test : * tp = 380µs, duty cycle < 2 %
** tp = 5 ms, duty cycle < 2 %
ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr Tj= 25°C IF= 0.5A IR= 1A
Irr = 0.25A 50 ns
IF= 1A VR= 30V
dIF/dt = -15A/µs 100
RECOVERY CHARACTERISTICS
Symbol Parameter Value Unit
Rth (j-c) Junction to case Per diode 1.5 °C/W
Total 0.8
Rth (c) Coupling 0.1 °C/W
When the diodes 1 and 2 are used simultaneously :
∆Tj(diode 1) = P(diode) x Rth(Per diode) + P(diode 2) x Rth(c) THERMAL RESISTANCE
Symbol Test Conditions Min. Typ. Max. Unit
tIRM dIF/dt = -120A/µs VCC= 200V IF= 30A Lp≤0.05µH Tj= 100°C see fig. 11
75 ns
dIF/dt = -240A/µs 50
IRM dIF/dt = -120A/µs 9 A
dIF/dt = -240A/µs 12
TURN-OFF SWITCHING CHARACTERISTICS (Without serie inductance)
Symbol Test Conditions Min. Typ. Max. Unit
C=VRP
VCC
Tj= 100°C VCC= 60V IF=IF(AV)
dIF/dt = -30A/µs Lp= 1µH see note see fig.12
3.3 /
Note : Applicable to BYT230PIV-400 / BYT231PIV-400 only To evaluate the conduction losses use the following equation : P = 1.1 x IF(AV)+ 0.0095 x IF2
(RMS)
TURN-OFF OVERVOLTAGE COEFFICIENT (With serie inductance)
BYT230PIV-400 / BYT231PIV-400
2/5
Fig.2 : Peak current versus form factor.
Fig.3 : Non repetitive peak surge current versus overload duration.
Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration.
0 5 10 15 20 25 30 35
0 5 10 15 20 25 30 35 40 45 50 55 60
=0.05
=0.1
=0.2 =0.5
T
=tp/ T tp IF(av)(A)
PF(av)(W)
=1
Fig.1 : Low frequency power losses versus average current.
Fig.6 : Recovery charge versus diF/dt.
Fig.5 : Voltage drop versus forward current.
BYT230PIV-400 / BYT231PIV-400
3/5
Fig.7 : Recovery time versus dIF/dt. Fig.8 : Peak reverse current versus dIF/dt.
Fig.10 : Dynamic parameters versus junction temperature.
Fig.9 : Peak forward voltage versus dIF/dt.
Fig.11 : TURN-OFF SWITCHING CHARACTE-RISTICS (Without serie inductance)
Fig.12 : TURN-OFF SWITCHING CHARACTE-RISTICS (With serie inductance)
LC
DUT
V C C IF
VF
IR M
V C C
tIRM
diF /dt L C
DUT
V C C LP
IF
VF
VRP
V C C d iF/d t
BYT230PIV-400 / BYT231PIV-400
4/5
PACKAGE MECHANICAL DATA ISOTOP Screw version
Cooling method : C Marking : Type number Weight : 28 g (without screws) Electrical isolation : 2500V(RMS)
Capacitance : < 45 pF Inductance : < 5nH
K Millimeters Inches Min. Max. Min. Max.
A 11.80 12.20 0.465 0.480 B 8.90 9.10 0.350 0.358 C 1.95 2.05 0.077 0.081 D 0.75 0.85 0.029 0.034 E 12.60 12.80 0.496 0.504 F 25.10 25.50 0.988 1.004 G 31.50 31.70 1.240 1.248
H 4.00 0.157
I 4.10 4.30 0.161 0.169 J 4.10 4.30 0.161 0.169 K 14.90 15.10 0.586 0.595 L 30.10 30.30 1.185 1.193 M 37.80 38.20 1.488 1.504 O 7.80 8.20 0.307 0.323
P 5.50 0.216
- Recommended torque value : 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the heatsink and the 4 screws given with the screw version).
- The screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min and 2.2 mm max.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1996 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia Brazil Canada China France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco -The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
BYT230PIV-400 / BYT231PIV-400
5/5
BYT260PIV-1000 BYT261PIV-1000
August 1996 - Ed: 2A
FAST RECOVERY RECTIFIER DIODES
VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE :
Insulating voltage = 2500 VRMS
Capacitance = 45 pF
DESCRIPTION FEATURES
Dual high voltage rectifiers suited for Switch Mode Power Supplies and other power converters.
The devices are packaged in ISOTOP.
ISOTOPTM (Plastic)
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 1000 V
IFRM Repetitive peak forward current tp≤10µs 750 A
IF(RMS) RMS forward current Per diode 140 A
IF(AV) Average forward current Tc=60°C
δ= 0.5
Per diode 60 A
IFSM Surge non repetitive forward current tp=10ms sinusoidal
Per diode 400 A
Tstg
Tj Storage and junction temperature range - 40 to + 150 - 40 to + 150 °C
°C
TM : ISOTOP is a trademark of SGS-THOM SON Microelectronics.
ABSOLUTE MAXIMUM RATINGS
K2 A2
A1 K1
BYT261PIV-1000
A2 K1
A1 K2
BYT260PIV-1000
1/5
Symbol Test Conditions Min. Typ. Max. Unit
VF * Tj = 25°C IF= 60 A 1.9 V
Tj= 100°C 1.8
IR ** Tj= 25°C VR= VRRM 100 µA
Tj= 100°C 6 mA
Pulse test : * tp = 380µs, duty cycle < 2 %
** tp = 5 ms, duty cycle < 2 %
ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr Tj= 25°C IF= 0.5A IR= 1A
Irr = 0.25A 70 ns
IF= 1A VR= 30V
dIF/dt = -15A/µs 170
RECOVERY CHARACTERISTICS
Symbol Parameter Value Unit
Rth (j-c) Junction to case Per diode 0.7 °C/W
Total 0.4
Rth (c) Coupling 0.1 °C/W
When the diodes 1 and 2 are used simultaneously :
∆Tj(diode 1) = P(diode) x Rth(Per diode) + P(diode 2) x Rth(c) THERMAL RESISTANCE
Symbol Test Conditions Min. Typ. Max. Unit
tIRM dIF/dt = -240A/µs VCC= 200V IF= 60A Lp≤0.05µH Tj= 100°C see fig. 11
200 ns
dIF/dt = -480A/µs 120
IRM dIF/dt = -240A/µs 40 A
dIF/dt = -480A/µs 44
TURN-OFF SWITCHING CHARACTERISTICS (Without serie inductance)
Symbol Test Conditions Min. Typ. Max. Unit
C= VRP
VCC
Tj= 100°C VCC= 200V IF=IF(AV)
dIF/dt = -60A/µs Lp = 2.5µH see fig.12
3.3 4.5 /
To evaluate the conduction losses use the following equation : P = 1.47 x IF(AV)+ 0.005 x IF2
(RMS)
TURN-OFF OVERVOLTAGE COEFFICIENT (With serie inductance)
BYT260PIV-1000 / BYT261PIV-1000
2/5
IM(A) P=100W IM
P =70W
P =40W P=20W
Fig.2 : Peak current versus form factor.
IM(A)
Fig.3 : Non repetitive peak surge current versus overload duration.
K=Zth(j-c)/Rth(j-c)
SINGLE PULSE
= 0 . 5
t(s)
T
= tp/ T tp
Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration.
PF(av)
Fig.1 : Low frequency power losses versus average current.
QRR( C) IF=I F(AV)
dIF/dt(A/ s) 90% CONFIDENCE Tj=100 Co
Fig.6 : Recovery charge versus diF/dt.
0.1 1 10 100
MAXIMUM VALUES
IFM(A)
Tj=25 Co
Tj=100 Co
Fig.5 : Voltage drop versus forward current.
BYT260PIV-1000 / BYT261PIV-1000
3/5
TFR( s)
IF =IF(AV) Tj=100 Co
dIF/dt( A/ s)
VFr=1.1*VF 90% CONFIDENCE
Fig.7 : Recovery time versus dIF/dt.
IRM(A)
10 100 500
1 10 100
IF=IF( AV)
dIF/dt( A/ s) 90% CONFIDENCE Tj=100 Co
Fig.8 : Peak reverse current versus dIF/dt.
QRR;IRM[Tj]/QRR;IRM[Tj=100oC] TYPICAL VALUES
Tj( C)o
Fig.10 : Dynamic parameters versus junction temperature.
IF =IF(AV)
dIF/dt(A/ s) 90% CONFIDENCE Tj=100 Co
Fig.9 : Peak forward voltage versus dIF/dt.
Fig.11 : TURN-OFF SWITCHING CHARACTE-RISTICS (Without serie inductance)
Fig.12 : TURN-OFF SWITCHING CHARACTE-RISTICS (With serie inductance)
LC
BYT260PIV-1000 / BYT261PIV-1000
4/5
PACKAGE MECHANICAL DATA ISOTOP Screw version
Cooling method : C Marking : Type number Weight : 28 g (without screws) Electrical isolation : 2500V(RMS)
Capacitance : < 45 pF Inductance : < 5 nH
K Millimeters Inches Min. Max. Min. Max.
A 11.80 12.20 0.465 0.480 B 8.90 9.10 0.350 0.358 C 1.95 2.05 0.077 0.081 D 0.75 0.85 0.029 0.034 E 12.60 12.80 0.496 0.504 F 25.10 25.50 0.988 1.004 G 31.50 31.70 1.240 1.248
H 4.00 0.157
I 4.10 4.30 0.161 0.169 J 4.10 4.30 0.161 0.169 K 14.90 15.10 0.586 0.595 L 30.10 30.30 1.185 1.193 M 37.80 38.20 1.488 1.504 O 7.80 8.20 0.307 0.323
P 5.50 0.216
- Recommended torque value : 1.3 N.m (MAX 1.5 N.m) for the 6 x M4 screws. (2 x M4 screws recommended for mounting the package on the heatsink and the 4 screws given with the screw version).
- The screws supplied with the package are adapted for mounting on a board (or other types of terminals) with a thickness of 0.6 mm min and 2.2 mm max.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1996 SGS-THOM SON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia Brazil Canada China France Germany Hong Kong Italy Japan Korea Malaysia Malta -Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
BYT260PIV-1000 / BYT261PIV-1000
5/5
BYT260PIV-400 BYT261PIV-400
August 1996 - Ed : 2B
FAST RECOVERY RECTIFIER DIODES
VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE :
Insulating voltage = 2500 VRMS
Capacitance = 45 pF
DESCRIPTION FEATURES
Dual high voltage rectifiers ranging from 400V to 200V suited for Switch Mode Power Supplies and other power converters.
The devices are packaged in ISOTOP.
ISOTOPTM (Plastic)
Symbol Parameter Value Unit
IFRM Repetitive peak forward current tp≤10µs 800 A
IF(RMS) RMS forward current Per diode 140 A
IF(AV) Average forward current Tc=80°C
δ= 0.5
Per diode 60 A
IFSM Surge non repetitive forward current tp=10ms sinusoidal
Per diode 600 A
Tstg
Tj Storage and junction temperature range - 40 to + 150 - 40 to + 150
°C°C ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
BYT261PIV-/BYT260PIV-Unit
200 300 400
VRRM Repetitive peak reverse voltage 200 300 400 V
TM : ISOTOP is a trademark of SGS-THOM SON Microelectronics.
K2 A2
A1 K1
BYT261PIV-400
A2 K1
A1 K2
BYT260PIV-400
1/5
Symbol Test Conditions Min. Typ. Max. Unit
VF * Tj = 25°C IF= 60 A 1.5 V
Tj= 100°C 1.4
IR ** Tj= 25°C VR= VRRM 60 µA
Tj= 100°C 6 mA
Pulse test : * tp = 380µs, duty cycle < 2 %
** tp = 5 ms, duty cycle < 2 %
ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr Tj= 25°C IF= 0.5A IR= 1A
Irr = 0.25A 50 ns
IF= 1A VR= 30V
dIF/dt = -15A/µs 100
RECOVERY CHARACTERISTICS
Symbol Parameter Value Unit
Rth (j-c) Junction to case Per diode 0.7 °C/W
Total 0.4
Rth (c) Coupling 0.1 °C/W
When the diodes 1 and 2 are used simultaneously :
∆Tj(diode 1) = P(diode) x Rth(Per diode) + P(diode 2) x Rth(c) THERMAL RESISTANCE
Symbol Test Conditions Min. Typ. Max. Unit
tIRM dIF/dt = -240A/µs VCC= 200V IF= 60A Lp≤0.05µH Tj= 100°C see fig. 11
75 ns
dIF/dt = -480A/µs 50
IRM dIF/dt = -240A/µs 18 A
dIF/dt = -480A/µs 24
TURN-OFF SWITCHING CHARACTERISTICS (Without serie inductance)
Symbol Test Conditions Min. Typ. Max. Unit
C= VRP
VCC
Tj= 100°C VCC= 120V IF=IF(AV) dIF/dt = -60A/µs Lp = 0.8µH
see note see fig.12
3.3 4 /
Note : Applicable to BYT261PIV-400 only
To evaluate the conduction losses use the following equation : P = 1.1 x IF(AV)+ 0.0045 x IF2
(RMS)
TURN-OFF OVERVOLTAGE COEFFICIENT (With serie inductance)
BYT261PIV-400
2/5
Fig.2 : Peak current versus form factor.
Fig.3 : Non repetitive peak surge current versus overload duration.
K=Zth(j-c)/Rth(j-c)
0.001 0.01 0.1 1 10
0.1 1
= 0 . 2
= 0. 1
SINGLE PULSE
= 0 . 5
t(s)
T
= tp/ T tp
Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration.
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0
10 20 30 40 50 60 70 80 90 100 110 120
=0.05 =0.1 =0.2 =0.5
T
=tp/ T tp IF(av)(A)
PF(av)(W)
=1
Fig.1 : Low frequency power losses versus average current.
Fig.6 : Recovery charge versus diF/dt.
Fig.5 : Voltage drop versus forward current.
BYT261PIV-400
3/5
Fig.7 : Recovery time versus dIF/dt. Fig.8 : Peak reverse current versus dIF/dt.
Fig.10 : Dynamic parameters versus junction temperature.
Fig.9 : Peak forward voltage versus dIF/dt.
Fig.11 : TURN-OFF SWITCHING CHARACTE-RISTICS (Without serie inductance)
Fig.12 : TURN-OFF SWITCHING CHARACTE-RISTICS (With serie inductance)
LC
DUT
V C C IF
VF
IR M
V C C
tIRM
diF /dt L C
DUT
V C C LP
IF
VF
VRP
V C C d iF/d t
BYT261PIV-400
4/5
PACKAGE MECHANICAL DATA