HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS
RECOVERY CHARACTERISTICS
BYW29(F)
2/7
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Fig.2 : Peak current versus form factor.
Tj=125 Co
Fig.3 : Forward voltage drop versus forward current (maximum values).
0.1
Single pulse
tp(s)
T
=t p/T tp
1.0E-03 1.0E-02 1.0E-01 1. 0E+00
K
Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration.
(TO220AC)
Fig.1 : Average forward power dissipation versus average forward current.
0.2
1.0E-03 1.0E-02 1.0E-01 1.0E +00 1 .0E+0 1 K
T
=t p/T tp
Fig.5 : Relative variation of thermal impedance junction to case versus pulse duration.
(ISOWATT220AC)
BYW29(F)
3/7
0.0010 0.01 0.1 1
Fig.7 : Non repetitive surge peak forward current versus overload duration.
(ISOWATT220AC) Rth(j-a)=15 oC/W
Rth(j -a)=Rth(j-c)
Fig.8 : Average current versus ambient temperature.
(duty cycle : 0.5) (TO220AC)
0 20 40 60 80 100 120 140 160 Rth(j-a)=15 oC/W
Rth(j-a)=Rth(j-c)
Fig.9 : Average current versus ambient temperature.
(duty cycle : 0.5) (ISOWATT220AC)
C(pF)
VR(V)
F=1Mhz Tj=25 Co
Fig.10 : Junction capacitance versus reverse voltage applied (Typical values).
0.0010 0.01 0.1 1
Fig.6 : Non repetitive surge peak forward current versus overload duration.
(TO220AC)
QRR(nC)
IF=IF(av) 90 %CONFIDENCE Tj -10 0 C
dIF/dt(A/us)
O
Fig.11 : Recovery charges versus dIF/dt.
BYW29(F)
4/7
Tj( C)
QRR;IRM[Tj]/QRR;IRM[Tj=125 C]
IRM QRR
o
o
Fig.13 : Dynamic parameters versus junction temperature.
IRM(A)
IF=IF(av) 90% CONFIDENCE
dIF/dt(A/us)
Tj-100 CO
Fig.12 : Peak reverse current versus dIF/dt.
BYW29(F)
5/7
Cooling method : C Marking : Type number Weight : 2 g
Recommended torque value : 0.55m.N Maximum torque value : 0.70m.N PACKAGE MECHANICAL DATA TO220AC (JEDEC outline)
Cooling method : C Marking : Type number Weight : 1.9 g
Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N PACKAGE MECHANICAL DATA ISOWATT220AC (JEDEC outline)
A Millimeters Inches Min. Max. Min. Max.
A 10 10.4 0.393 0.409
B 15.2 15.9 0.598 0.626
C 13 14 0.511 0.551
D 6.2 6.6 0.244 0.260
E 16.4 typ. 0.645 typ.
F 3.5 4.2 0.137 0.165
G 2.65 2.95 0.104 0.116
H 4.4 4.6 0.173 0.181
I 3.75 3.85 0.147 0.151
J 1.23 1.32 0.048 0.051
K 1.27 typ. 0.050 typ.
L 0.49 0.70 0.019 0.027
M 2.4 2.72 0.094 0.107
N 4.95 5.15 0.194 0.203
O 1.14 1.70 0.044 0.067
P 0.61 0.88 0.024 0.034
A Millimeters Inches Min. Max. Min. Max.
A 10 10.4 0.393 0.409
B 15.9 16.4 0.626 0.645
C 28.6 30.6 1.126 1.204
D 16 typ 0.630 typ
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
Purchase of I2C Components by SGS-THOMSON Microelectronics, conveys a licence under the Philips I2C Patent. Rights to use these components in an I2C system, is grantede provided that the system conforms to
the I2C Standard Specification as defined by Philips.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia Brazil France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco The Netherlands -Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
BYW29(F)
7/7
BYW80(F)
August 1993 Ed : 1B
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
TO220AC (Plastic) BYW80-200 SUITED FOR SMPS
VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AC) : Insulating voltage = 2000 V DC
Capacitance = 12 pF
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS FEATURES
Single chip rectifier suited for switchmode power supply and high frequency DC to DC converters.
Packaged in TO220AC, or ISOWATT220AC this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.
isolated ISOWATT220AC
(Plastic) BYW80F-200
Symbol Parameter Value Unit
IF(RMS) RMS forward current 20 A
IF(AV) Average forward current δ= 0.5
TO220AC Tc=120°C 10 A
ISOWATT220AC Tc=95°C 10
IFSM Surge non repetitive forward current tp=10ms sinusoidal
100 A
Tstg
Tj Storage and junction temperature range - 65 to + 150
- 65 to + 150 °C
°C
Symbol Parameter BYW80-(F)
Unit
50 100 150 200
VRRM Repetitive peak reverse voltage 50 100 150 200 V
K A
K A
1/7
Symbol Test Conditions Min. Typ. Max. Unit
IR* Tj= 25°C VR= VRRM 10 µA
Tj= 100°C 1 mA
VF ** Tj= 125°C IF= 7 A 0.85 V
Tj= 125°C IF= 15 A 1.05
Tj= 25°C IF= 15 A 1.15
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380µs, duty cycle < 2 %
To evaluate the conduction losses use the following equation : P = 0.65 x IF(AV)+ 0.027 x IF2
(RMS)
Symbol Test Conditions Min. Typ. Max. Unit
trr Tj= 25°C IF= 0.5A IR= 1A
Irr = 0.25A 25 ns
IF= 1A VR= 30V
dIF/dt = -50A/µs 35
tfr Tj= 25°C IF= 1A VFR= 1.1 x VF
tr = 10 ns 15 ns
VFP Tj= 25°C IF= 1A tr = 10 ns 2 V
Symbol Parameter Value Unit
Rth (j-c) Junction to case TO220AC 2.5 °C/W
ISOWATT220AC 4.7
THERMAL RESISTANCE
ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS
RECOVERY CHARACTERISTICS
BYW80(F)
2/7
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Fig.2 : Peak current versus form factor.
0.1 1 10 100
Fig.3 : Forward voltage drop versus forward current (maximum values).
0.1
Single pulse
tp(s)
T
=t p/T tp
1.0E-03 1.0E-02 1.0E-01 1. 0E+00
K
Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration.
(TO220AC)
Fig.1 : Average forward power dissipation versus average forward current.
0.2
1.0E-03 1.0E-02 1.0E-01 1.0E +00 1 .0E+0 1 K
T
=t p/T tp
Fig.5 : Relative variation of thermal impedance junction to case versus pulse duration.
(ISOWATT220AC)
BYW80(F)
3/7
0.0010 0.01 0.1 1 10
Fig.7 : Non repetitive surge peak forward current versus overload duration.
(ISOWATT220AC) Rth(j-a)=15 oC/W
Rth(j-a)=Rth(j-c)
Fig.8 : Average current versus ambient temperature.
(duty cycle : 0.5) (TO220AC)
0 20 40 60 80 100 120 140 160 Rth(j-a)=15 oC/W
Rth(j-a)=Rth(j-c)
Fig.9 : Average current versus ambient temperature.
(duty cycle : 0.5) (ISOWATT220AC)
C(pF)
VR(V)
Fig.10 : Junction capacitance versus reverse voltage applied (Typical values).
0.0010 0.01 0.1 1 100IM(A)
Tc=25 oC
Fig.6 : Non repetitive surge peak forward current versus overload duration.
(TO220AC)
QRR(nC)
90% CONFIDENCE Tj=125oC IF=IF(av)
dIF/dt(A/us) Fig.11 : Recovery charges versus dIF/dt.
BYW80(F)
4/7
Tj( C) QRR;IRM[Tj]/QRR;IRM[Tj=125 C]
IRM
QRR
o
O
Fig.13 : Dynamic parameters versus junction temperature.
I RM(A)
90% CONFIDENCE Tj=125oC IF=IF(av)
dIF/dt(A/us)
Fig.12 : Peak reverse current versus dIF/dt.
BYW80(F)
5/7
Cooling method : C Marking : Type number Weight : 2 g
Recommended torque value : 0.55m.N Maximum torque value : 0.70m.N PACKAGE MECHANICAL DATA TO220AC (JEDEC outline)
Cooling method : C Marking : Type number Weight : 1.9 g
Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N PACKAGE MECHANICAL DATA ISOWATT220AC (JEDEC outline)
A Millimeters Inches Min. Max. Min. Max.
A 10 10.4 0.393 0.409
B 15.2 15.9 0.598 0.626
C 13 14 0.511 0.551
D 6.2 6.6 0.244 0.260
E 16.4 typ. 0.645 typ.
F 3.5 4.2 0.137 0.165
G 2.65 2.95 0.104 0.116
H 4.4 4.6 0.173 0.181
I 3.75 3.85 0.147 0.151
J 1.23 1.32 0.048 0.051
K 1.27 typ. 0.050 typ.
L 0.49 0.70 0.019 0.027
M 2.4 2.72 0.094 0.107
N 4.95 5.15 0.194 0.203
O 1.14 1.70 0.044 0.067
P 0.61 0.88 0.024 0.034
A Millimeters Inches Min. Max. Min. Max.
A 10 10.4 0.393 0.409
B 15.9 16.4 0.626 0.645
C 28.6 30.6 1.126 1.204
D 16 typ 0.630 typ
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
Purchase of I2C Components by SGS-THOMSON Microelectronics, conveys a licence under the Philips I2C Patent. Rights to use these components in an I2C system, is grantede provided that the system conforms to
the I2C Standard Specification as defined by Philips.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia Brazil France Germany Hong Kong Italy Japan Korea Malaysia Malta Morocco The Netherlands -Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
BYW80(F)
7/7
BYW 100-50 → 200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD AND REVERSE RECOVERY TIMES
HIGH SURGE CURRENT
THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trrAND IRMAT 100°C UNDER USERS CONDITIONS
DESCRIPTION
Low voltage drop and rectifier suited for switching mode base drive and transistor circuits.
December 1994
F 126 (Plastic)
Symbol Parameter Value Unit
IFRM Repetive Peak Forward Current tp≤20µs 50 A
IF (AV) Average Forward Current* Ta =90°C
δ= 0.5
1.5 A
IFSM Surge non Repetitive Forward Current tp= 10ms Sinusoidal
50 A
Pto t Power Dissipation* Ta =90°C 1.3 W
Tstg
Tj
Storage and Junction Temperature Range - 40 to + 150
- 40 to + 150
°C TL Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
230 °C
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
Rth (j - a) Junction-ambient* 45 °C/W
THERMAL RESISTANCE
Symbol Parameter BYW
100-Unit
50 100 150 200
VRRM Repetitive Peak Reverse Voltage 50 100 150 200 V
VRSM Non Repetitive Peak Reverse Voltage 55 110 165 220 V
* On infinite heatsink with 10mm lead length.
1/5
2/5
Synbol Test Conditions Min. Typ. Max. Unit
IR Tj= 25°C VR= VRRM 10 µA
Tj= 100°C 0.5 mA
VF Tj= 25°C IF= 4.5A 1.2 V
Tj= 100°C IF= 1.5A 0.85
STATIC CHARACTERISTICS ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr Tj= 25°C IF= 1A diF/dt = - 50A/µs
VR= 30V See figure 10
35 ns
Qrr Tj= 25°C IF= 1A diF/dt = - 20A/µs
VR≤30V
10 nC
tfr Tj= 25°C IF= 1A tr= 10ns
Measured at 1.1 x VF
30 ns
VFP Tj= 25°C IF= 1A tr= 10ns 5 V
RECOVERY CHARACTERISTICS
To evaluate the conduction losses use the following equations:
VF= 0.66 + 0.075 IF
P = 0.06 x IF(AV)+ 0.075 IF2 (RMS)
BYW 100-50→200
Figure 2. Average forward current versus ambient temperature.
Figure 3. Thermal resistance versus lead length.
Figure 4. Transient thermal impedance junction-ambient for mounting n°2 versus pulse duration (L = 10 mm).
Figure 5. Peak forward current versus peak forward voltage drop (maximum values).
Mounting n°1 INFINITE HEATSINK
Mounting n°2 PRINTED CIRCUIT Fi g ure 1 . M a xi m u m av er ag e powe r
dissipation versus average forward current.
3/5
BYW 100-50 →200
4/5
Figure 6. Capacitance versus reverse voltage applied.
Figure 7. Recovery time versus diF/dt.
Figure 8. Peak reverse current versus diF/dt.
Figure 10. Measurement of trr (Fig. 7) and IRM
(Fig. 8).
Figure 9. Dyn amic pa rameters versus junction temperature.
BYW 100-50→200
F 126 (Plastic)