^zml-Conductoi Lptoducti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960
DISCRETE POWER & SIGNAL TECHNOLOGIES
2N6076
SILICON PNP SMALL SIGNAL TRANSISTOR
BVCEO 25 V (Mln)
hFE . . . . 100 (Min) @ VCE - 10 V, Ic = 10 mA
ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES
Storage Temperature
Operating Junction Temperature
-55 Degrees C to
POWER DISSIPATION (NOTES 2 & 3) Total Device Dissipation at TA = 25 Deg C
VOLTAGES & CURRENT VCEO Collector to Emitter VCBO Collector to Base VEBO Emitter to Base Ic Collector Current
1 B
2 C
3 E
1 50 Degrees C 1 50 Degrees C
625 mW
25V 25V 5 V 500mA
0.175-0.185 (4.450-4.700)
LOGOXYY
2N 6076
0.135-0.145
f
(3.429 - 3.683)
1
0.175-0.185 (4.450 - 4.700)
SEATING
A PLANE
(12.70)
J.
MIN
H-
0.016- 0.021 (0.410-0.533) 0.045 - 0.055 (1.143- 1.397) 0.095-(2.413 - 2.667)
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
SYM
BVCBO
BVCEO
BVEBO ICBO
ICES
lEBO hFE VcE(sat) VBE(sat)
VBE(OII)
CHARACTERISTICS
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Cutoff CurrentCollector Cutoff Current Emitter Cutoff Current DC Current Gain
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
Base -Emitter On Voltage
MIN
25 25 5100
0.5
MAX
100 10 100 100 500 0.25 0.8
1.2
UNITS
V V V nA uA nA uAV V
v
TEST CONDITIONS Ic= 100 uA
Ic= 10mA IE= 10 uA VCB= 25V
VCB= 25V,T=+100°C VCE= 25V
VEB= 3.0V
VCE= 10 V Ic = 10 mA
1C = 10mA IB = 1.0mAIc = 10mA IB = 1.0mA
VCE= 10 V Ic =10mA
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
