<£e.mi-dona.\jLako\i, fine.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.S.A.
TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960
2N1564 - 2N1565 2N1566
Diffused Silicon NPN Transistors
mechanical data
01M
01"
INI (OdEdoi it in tietr«i<n
COHIAd WITH THE MSI.
111 1EDEC 10-1 OIMEKSIOKS AHO HOICS AIE «rril(AllC.
All OlMIKrtlOMt Alf
M l
" ' '
MAXIMUM RATINGS
Total Device Dissipation - Free Air GOOmW . Operating Temperature -65 °C to +I75°C Storage Temperature -S5°0 to +200°C
DESIGN CHARACTERISTICS AT 25 °C(E«.pt« Noted)
2N1564 2N1565 2N1566
SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX. UNITS BVCB0
'8VCEO BVEBO
!CBO
'CBO
'EBO
vCE(sat)
c
ob"fe
h(e
h(e
h,e
Collector-Base Breakdown Voltage Collector -Emitter Breakdown Voltage Emitter -Base Breakdown Voltage Collector Reverse Current Collector Reverse Current Emitter Reverse Current Saturation Voltage Collector Capacitance Current Transfer Ratio Current Transfer Ratio Current Transfer Ratio Input Impedance nurnit MmMiar?
Icg.lO^A, IE.0 80 100 - 80 lOO - 80 lOO lCE,10mA, 19-0 60 75 60 75 • 60 75 - i IEB= lOO^iA, Ig. 0 5 8 - 5 8 - 5 8 - VCB= 40V, T.25°C • 0.05 1 • 0.05 1 • 0.05 1 VCB.40V,T. 150°C 5 100 5 100 5 100 VE B= 5 V , T-25°C - 1 10 - 1 10 - 1 10
!B.2mA, lc.lQnA - . 6 1 - . 6 1 - . 6 1 VC B-5V, IE-0, f.lmc 5 10 5 10 5 10 VCE.5V, lE--5mA,f.lKC 20 - 50 40 • 100 80 - 200 VC E- 5 V , lE--lmA,f=.lKC 15 - - 30- • • 60 • • VC E»5V, lE.-5mA,UlKC, T- -55°C 12 • • 20 - - 40 . • VC E.5V, lE--5mA,f,lKC • - 1 2 0 0 • • 1500 .- - 1800 Vcc=5V. lc»-5mA.f. 1 K C - 2 5 - - 6 5 • - 9 5 • ui
V V V i^A uA MA V
H*
•
•
n
nhos
Voltage Feedback Transfer Ratio
Current Transfer Ratio I
'i 'Pulse niG.isuicment 300|<scc pulse, 2°i Duty Cycle
VC E. 5 V , lE- - 5 m A , f . 1KC
V cE- 5 V , lE»-5mA,f»30mc
.1 1.3 • xlO"
