BUV27 SGS THOMSON
M DOS
FAST NPN SWITCHING TRANSISTOR
■ VERY LOW SATURATION VOLTAGE . FAST TURN-OFF AND TURN-ON
DESCRIPTIO N
High speed transistor suited for low voltage applica
tions.
High frequency and efficiency converters switching regulators motor control.
ABSOLUTE MAXIMUM RATINGS
S y m b o l P a r a m e t e r V a l u e U n i t
VcBO Collector-base Voltage (Ie = 0) 240 V
VcEO Collector-emitter Voltage ( Ib = 0) 120 V
oCD>
Emitter-base Voltage (lc = 0) 7 V
lc Collector Current 12 A
ICM Collector Peak Current 20 A
Ib Base Current 4 A
• b m Base Peak Current 6 A
P tot Total Dissipation at T c < 25°C 85 W
P tot Total Dissipation at T c < 60°C 65 W
Tstg Storage Temperature - 65 to 175 °C
Ti Max. Operating Junction Temperature 175 °C
November 1988 1/6
TH ERM AL DATA
Mhj-case Thermal Resistance Junction-case 1.76 °C/W
ELECTR IC AL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)
S y m b o l P a r a m e t e r T e s t C o n d i t i o n s M i n . T y p . M a x . U n i t .
I c E R Collector Cutoff
Current (RBe= 50fi)
Vce= 240V T c = 125“C 3 mA
I c E X Collector Cutoff Current Vce= 240V VBE = - 1.5V T c = 125°C 1 mA
Ie b o Emitter Cutoff Current ( l c = 0)
VEB = 5V 1 mA
V cE O( s u s ) * Collector Emitter Sustaining Voltage
l c = 0.2A L = 25mH 120 V
Vebo Emitter-base Voltage (lc =0)
Ie = 50mA 7 30 V
V c E ( s a t ) * Collector-emitter Saturation Voltage
lc = 4A IB = 0.4A lc =8A Ib = 0.8A
0.7 1.5
V V
V B E ( s a t ) * Base-emitter Saturation Voltage
l c = 8 A l B = 0.8A 2 V
RESISTIVE LOAD
S y m b o l P a r a m e t e r T e s t C o n d i t i o n s M i n . T y p . M a x . U n i t .
ton Turn-on Time VCC = 9 0 V l c = 8 A 0.4 0 .8 US
U Storage Time Vb e = — 6 V I b 1 = 0 . 8 A 0.5 1.2 US
t f Fall Time Rb b = 3 .7 5 Q 0 .1 2 0 .2 5 ps
INDUCTIVE LOAD
S y m b o l P a r a m e t e r T e s t C o n d i t i o n s M i n . T y p . M a x . U n i t .
ts Storage Time Vcc = 90V lc = 8A 0.6 ps
tf Fall Time IB1 = 0.8A
Lb = 1pH
Vbe = - 5V 0.04 ps
ts Storage Time Vcc = 90V lc = 8 A 2 ps
tf Fall Time Ibi = 0.8A VBE = — 5V 0.15 ps
L B = 1pH Tj = 125°C Pulsed : Pulse duration = 300 ps, duty cycle = 2 %.
2/6 HZT SGS-THOMSON
“ ■7# WBiWEUiCTIRMSIO
DC and Pulse Area. Collector-emitter Voltage vs. Base-emitter Resistance.
1 2 4 6 10 20 40 60 100 200 Vq e IV )
Power and Isb Derating vs. Case Temperature.
DC Current Gain.
1 V p j: - 5 V
\
\
r - v « r
\
* 0 ° c
V S
0 2 4 6 8 10 12 14 i c cai o 2 4 6 8 10 12 lc (A)
T SGS-THOMSON
“ 7 # M tC M M U C T IIO M C S
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Base Characteristics.
Saturation Voltage.
Collector Saturation Region.
0 0.2 0 .4 0.6 0.8 1 1 .2 Ib(A )
Collector Current Spread vs Base-emitter Voltage.
SW ITCHING O PERATIN G AND O VER LO AD AR EAS
o
i - « n J
° J.
i
r R„c
(J
X 1
_______ I__ T
Transistor Forward Biased Transistor Reverse Biased
- During the turn on - During the turn off with negative base-Semitter - During the turn off without negative base-emitter voltage
voltage and Rbe 2100 £2
SGS-THOMSON MDCmSUSBmMBDCS
4 /6
Forward Biased Safe Operating Area (FBSOA).
The hatched zone can only be used for turn on.
Forward Biased Accidental Overload Area (FBAOA).
Reverse Biased Safe Operating Area (RBSOA).
0 60 100 150 200 Vc e «V>
Reverse Biased Accidental Overload Area (RBAOA).
0 SO 100 150 200 V c E t V )
High accidental surge currents (I > Icm) are allowed if they are non repetitive and applied less than 3000 times during the component life.
The Kellog network (heavy point) allows the calcu
lation of the maximum value of the short-circuit cur
rent for a given base current Ib (90 % confidence).
After the accidental overload current, the RBAOA has to be used for the turn off.
SCS-THOMSON
(MCBMUiCmSiajllCS
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Switching Times vs Collector Current (resistive Switching Times vs Junction Temperature, load).
Switching Times Test Circuit on Inductive Load.
B Y X 6 1 -4 0 0
0 25 50 75 100 125 T j (°C )
Switching Times vs Junction Temperature (induc
tive load).
t
Ott)
0.6 0.4
0.2
0.1
0,06 0.04
0,02
0.01
0 1 2 3 4 5 6 7 8 l c (A)
IN DUC TIVE LOAD l _ V p p - - 5 V .
V CC = 90 V
•C^B = 10
SGS-THOMSON MCMMlJienHMDM 6/6
