CS-30

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CS 30

Symbol Test Conditions Maximum Ratings

I_T(RMS) T_VJ = T_VJM 49 A

I_T(AV)M T_case = 85°C; 180° sine 31 A

I_TSM T_VJ = 45°C; t = 10 ms (50 Hz), sine 300 A

V_R = 0 V t = 8.3 ms (60 Hz), sine 320 A

T_VJ = T_VJM t = 10 ms (50 Hz), sine 270 A

V_R = 0 V t = 8.3 ms (60 Hz), sine 290 A

I²t T_VJ = 45°C t = 10 ms (50 Hz), sine 450 A²s V_R = 0 V t = 8.3 ms (60 Hz), sine 440 A²s T_VJ = T_VJM t = 10 ms (50 Hz), sine 365 A²s V_R = 0 V t = 8.3 ms (60 Hz), sine 355 A²s (di/dt)_cr T_VJ = T_VJM repetitive, I_T = 40 A 150 A/µs

f = 50Hz, t_P =200µs V_D = 2/3 V_DRM

I_G = 0.3 A non repetitive, I_T = I_T(AV)M 500 A/µs di_G/dt = 0.3 A/µs

(dv/dt)_cr T_VJ = T_VJM; V_DR = 2/3 V_DRM 1000 V/µs R_GK = ∞; method 1 (linear voltage rise)

P_GM T_VJ = T_VJM t_P= 30 µs 10 W

I_T = I_T(AV)M t_P = 300 µs 5 W

P_GAV 0.5 W

V_RGM 10 V

T_VJ -40...+125 °C

T_VJM 125 °C

T_stg -40...+125 °C

M_d Mounting torque M3 1.13 Nm

10 lb.in.

Weight 6 g

Features

● Thyristor for line frequency

● International standard package JEDEC TO-247

● Planar passivated chip

● Long-term stability of blocking currents and voltages

Applications

● Motor control

● Power converter

● AC power controller

● Switch-mode and resonant mode power supplies

● Light and temperature control

Advantages

● Easy to mount with 1 screw (isolated mounting screw hole)

● Space and weight savings

● Simple mounting

● Improved temperature and power cycling

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

Phase Control Thyristor V

_RRM

= 1200-1600 V I

_T(RMS)

= 49 A

I

_T(AV)M

= 31 A

V_RSM V_RRM Type

V_DSM V_DRM

V V

1200 1200 CS 30-12io1 1400 1400 CS 30-14io1 1600 1600 CS 30-16io1

723

A C

G

A C TO-247 AD

C = Cathode, A = Anode, G = Gate TAB = Anode

(TAB) G

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CS 30

Symbol Test Conditions Characteristic Values

I_R, I_D T_VJ = T_VJM; V_R = V_RRM; V_D = V_DRM ≤ 5 mA

V_T I_T = 45 A; T_VJ = 25°C ≤ 1.6 V

V_T0 For power-loss calculations only (T_VJ = 125°C) 0.9 V

r_T 15 mΩ

V_GT V_D = 6 V; T_VJ = 25°C ≤ 1.0 V

T_VJ = -40°C ≤ 1.2 V

I_GT V_D = 6 V; T_VJ = 25°C ≤ 65 mA

T_VJ = -40°C ≤ 80 mA

T_VJ = 125°C ≤ 50 mA

V_GD T_VJ = T_VJM; V_D = 2/3 V_DRM ≤ 0.2 V

I_GD ≤ 5 mA

I_L T_VJ = 25°C; t_P = 10 µs ≤ 150 mA

I_G = 0.3 A; di_G/dt = 0.3 A/µs

I_H T_VJ = 25°C; V_D = 6 V; R_GK = ∞ ≤ 100 mA

t_gd T_VJ = 25°C; V_D = 1/2 V_DRM ≤ 2 µs

I_G = 0.3 A; di_G/dt = 0.3 A/µs

R_thJC DC current 0.62 K/W

R_thJH DC current 0.82 K/W

a Max. acceleration, 50 Hz 50 m/s²

TO-247 AD Outline

Dim. Millimeter Inches Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A₁ 2.2 2.54 .087 .102 A₂ 2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b₁ 1.65 2.13 .065 .084 b₂ 2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

∅ P

e

Fig. 1 Gate trigger range

Fig. 2 Gate controlled delay time t_gd

10 100 1000

1 10 100 1000

µs t_gd

I_G

1 10 100 1000 10000

0.1 1 10

I_G V_G

mA V

4

1 2 5

6

mA typ. Limit

3

T_VJ= 25°C

I_GD, T_VJ =125°C

4: P_GAV = 0.5 W 5: P_GM = 1 W 6: P_GM = 10 W 1: I_GT, T_VJ = 125°C

2: I_GT, T_VJ = 25°C 3: I_GT, T_VJ = -40°C

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0 20 40 60 80 100 120 0

5 10 15 20 25 30 35 40 45 50

I_T(AV)M

0 10 20 30 40

0 10 20 30 40 50 60 70 80 90

0 25 50 75 100 125 150

0.001 0.01 0.1 1

0 100 200 300 400

0.0 0.5 1.0 1.5 2.0

0 10 20 30 40 50 60

0.001 0.01 0.1 1 10 100

0.0 0.5 1.0

I_TSM I_T

A

V_T t

s

P_T W

I_T(AV)M A

Tamb

°C

t s Z_thJC

K/W

V

A

1 2 3 4 5 6 7 8 910

100 1000

I²t

t A²s

T_case A

°C ms

Fig. 8 Transient thermal impedance junction to case

Fig. 3 Forward characteristics Fig. 4 Surge overload current I_TSM: crest value, t: duration

Fig. 5 I²t versus time (1-10 ms)

Fig. 6 Power dissipation versus forward current and ambient temperature Fig. 7 Max. forward current at case temperature

T_VJ= 125°C T_VJ= 45°C 50Hz, 80%V_RRM

T_VJ= 125°C

DC 180° sin 120°

60°

30°

R_thHA:

1 K/W 2 K/W 3 K/W 5 K/W 7.5 K/W 15 K/W

T_VJ= 45°C

DC 180° sin 120°

60°

30°

60°

120°

180°

DC

V_R= 0 V

200 300

T_VJ= 25°C T_VJ= 125°C

R_thJC for various conduction angles d:

d R_thJC (K/W)

DC 0.62

180° 0.71

120° 0.748

60° 0.793

30° 0.817

Constants for Z_thJC calculation:

i R_thi (K/W) t_i (s)

1 0.206 0.013

2 0.362 0.118

3 0.052 1.488

400