LMP7701

(1)

LMP7701/LMP7702/LMP7704 Precision, CMOS Input, RRIO, Wide Supply Range Amplifiers

Check for Samples:LMP7701,LMP7702,LMP7704

1

FEATURES • Supply Current (LMP7704) 2.9 mA

• Supply Voltage Range 2.7V to 12V

23

• Unless Otherwise Noted, Typical Values at V

_S

= 5V • Rail-to-Rail Input and Output

• Input Offset Voltage (LMP7701) ±200 µV (max)

APPLICATIONS

• Input Offset Voltage (LMP7702/LMP7704) ±220

µV (max) • High Impedance Sensor Interface

• Input Bias Current ±200 fA • Battery Powered Instrumentation

• Input Voltage Noise 9 nV/√Hz • High Gain Amplifiers

• CMRR 130 dB • DAC Buffer

• Open Loop Gain 130 dB • Instrumentation Amplifier

• Temperature Range −40°C to 125°C • Active Filters

• Unity Gain Bandwidth 2.5 MHz

• Supply Current (LMP7701) 715 µA

• Supply Current (LMP7702) 1.5 mA

DESCRIPTION

The LMP7701/LMP7702/LMP7704 are single, dual, and quad low offset voltage, rail-to-rail input and output precision amplifiers each with a CMOS input stage and a wide supply voltage range. The LMP7701/LMP7702/LMP7704 are part of the LMP™ precision amplifier family and are ideal for sensor interface and other instrumentation applications.

The guaranteed low offset voltage of less than ±200 µV along with the guaranteed low input bias current of less than ±1 pA make the LMP7701 ideal for precision applications. The LMP7701/LMP7702/LMP7704 are built utilizing VIP50 technology, which allows the combination of a CMOS input stage and a 12V common mode and supply voltage range. This makes the LMP7701/LMP7702/LMP7704 great choices in many applications where conventional CMOS parts cannot operate under the desired voltage conditions.

The LMP7701/LMP7702/LMP7704 each have a rail-to-rail input stage that significantly reduces the CMRR glitch commonly associated with rail-to-rail input amplifiers. This is achieved by trimming both sides of the complimentary input stage, thereby reducing the difference between the NMOS and PMOS offsets. The output of the LMP7701/LMP7702/LMP7704 swings within 40 mV of either rail to maximize the signal dynamic range in applications requiring low supply voltage.

The LMP7701 is offered in the space saving 5-Pin SOT-23 and 8-Pin SOIC package. The LMP7702 is offered in the 8-Pin SOIC and 8-Pin VSSOP package. The quad LMP7704 is offered in the 14-Pin SOIC and 14-Pin TSSOP package. These small packages are ideal solutions for area constrained PC boards and portable electronics.

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

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+

R_S

Z LOAD V₁

V₂

R R

V⁺

V⁺ V^-

V^-

+ -

-

I = (V2± V1) RS A1

A2

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

TYPICAL APPLICATION

Figure 1. Precision Current Source

Absolute Maximum Ratings

^{(1) (2)}

ESD Tolerance⁽³⁾ Human Body Model 2000V

Machine Model 200V

Charge-Device Model 1000V

VINDifferential ±300 mV

Supply Voltage (VS= V⁺– V⁻) 13.2V

Voltage at Input/Output Pins V⁺+ 0.3V, V⁻−0.3V

Input Current 10 mA

Storage Temperature Range −65°C to +150°C

Junction Temperature⁽⁴⁾ +150°C

Soldering Information Infrared or Convection (20 sec) 235°C

Wave Soldering Lead Temp. (10 sec) 260°C

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics Tables.

(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.

(3) Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).

(4) The maximum power dissipation is a function of T_J(MAX),θ_JA. The maximum allowable power dissipation at any ambient temperature is PD= (TJ(MAX)– TA)/θJA. All numbers apply for packages soldered directly onto a PC Board.

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Operating Ratings

⁽¹⁾

Temperature Range⁽²⁾ −40°C to +125°C

Supply Voltage (V_S= V⁺– V⁻) 2.7V to 12V

Package Thermal Resistance (θ_JA⁽²⁾) 5-Pin SOT-23 265°C/W

8-Pin SOIC 190°C/W

8-Pin VSSOP 235°C/W

14-Pin SOIC 145°C/W

14-Pin TSSOP 122°C/W

(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics Tables.

(2) The maximum power dissipation is a function of TJ(MAX),θJA. The maximum allowable power dissipation at any ambient temperature is P_D= (T_J(MAX)– T_A)/θ_JA. All numbers apply for packages soldered directly onto a PC Board.

3V Electrical Characteristics

⁽¹⁾

Unless otherwise specified, all limits are guaranteed for T_A= 25°C, V⁺= 3V, V⁻= 0V, V_CM= V⁺/2, and R_L> 10 kΩto V⁺/2.

Boldface limits apply at the temperature extremes.

Parameter Test Conditions Min⁽²⁾ Typ⁽³⁾ Max⁽²⁾ Units

VOS Input Offset Voltage LMP7701 ±37 ±200

±500 μV

LMP7702/LMP7704 ±56 ±220

±520

TCV_OS Input Offset Voltage Temperature Drift ⁽⁴⁾ ±1 ±5 μV/°C

I_B Input Bias Current ^{(4) (5)} ±0.2 ±1

−40°C≤TA≤85°C ±50

(4) (5) ±0.2 ±1 pA

−40°C≤T_A≤125°C ±400

IOS Input Offset Current 40 fA

CMRR Common Mode Rejection Ratio 0V≤VCM≤3V 86 130

LMP7701 80

0V≤V_CM≤3V 84 130 dB

LMP7702/LMP7704 78

PSRR Power Supply Rejection Ratio 2.7V≤V⁺≤12V, Vo = V⁺/2 86 98 82 dB

CMVR Common Mode Voltage Range CMRR≥80 dB –0.2 3.2 V

CMRR≥77 dB –0.2 3.2

AVOL Open Loop Voltage Gain RL= 2 kΩ(LMP7701) 100 114

V_O= 0.3V to 2.7V 96

R_L= 2 kΩ(LMP7702/LMP7704) 100 114

VO= 0.3V to 2.7V 94 dB

R_L= 10 kΩ 100 124

V_O= 0.2V to 2.8V 96

(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device such that T_J= T_A. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ> TA.

(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are guaranteed through correlations using the Statistical Quality Control (SQC) method.

(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary over time and will also depend on the application and configuration. The typical values are not tested and are not guaranteed on shipped production material.

(4)

3V Electrical Characteristics

⁽¹⁾

(continued)

VOUT Output Voltage Swing High RL= 2 kΩto V⁺/2 40 80

LMP7701 120

R_L= 2 kΩto V⁺/2 40 80

LMP7702/LMP7704 150 mV

from V⁺

R_L= 10 kΩto V⁺/2 30 40

LMP7701 60

RL= 10 kΩto V⁺/2 35 50

LMP7702/LMP7704 100

Output Voltage Swing Low R_L= 2 kΩto V⁺/2 40 60

LMP7701 80

R_L= 2 kΩto V⁺/2 45 100

LMP7702/LMP7704 170

RL= 10 kΩto V⁺/2 20 40 mV

LMP7701 50

R_L= 10 kΩto V⁺/2 20 50

LMP7702/LMP7704 90

I_OUT Output Current^{(6) (7)} Sourcing V_O= V⁺/2 25 42

VIN= 100 mV 15

Sinking VO= V⁺/2 25 42 mA

V_IN=−100 mV (LMP7701) 20

Sinking VO= V⁺/2 25 42

V_IN=−100 mV (LMP7702/LMP7704) 15

I_S Supply Current LMP7701 0.670 1.0

1.2

LMP7702 1.4 1.8

2.1 mA

LMP7704 2.9 3.5

4.5

SR Slew Rate⁽⁸⁾ A_V= +1, V_O= 2 V_PP 0.9 V/μs

10% to 90%

GBW Gain Bandwidth 2.5 MHz

THD+N Total Harmonic Distortion + Noise f = 1 kHz, A_V= 1, R._L= 10 kΩ 0.02 %

e_n Input Referred Voltage Noise Density f = 1 kHz 9 nV/√Hz

in Input Referred Current Noise Density f = 100 kHz 1 fA/√Hz

(6) The maximum power dissipation is a function of TJ(MAX),θJA. The maximum allowable power dissipation at any ambient temperature is P_D= (T_J(MAX)– T_A)/θ_JA. All numbers apply for packages soldered directly onto a PC Board.

(7) The short circuit test is a momentary test.

(8) The number specified is the slower of positive and negative slew rates.

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5V Electrical Characteristics

⁽¹⁾

±500 μV

LMP7702/LMP7704 ±32 ±220

±520

I_B Input Bias Current ^{(4) (5)} ±0.2 ±1

−40°C≤TA≤85°C ±50

(4) (5) ±0.2 ±1 pA

−40°C≤T_A≤125°C ±400

CMRR Common Mode Rejection Ratio 0V≤VCM≤5V 88 130

LMP7701 83

0V≤V_CM≤5V 86 130 dB

LMP7702/LMP7704 81

PSRR Power Supply Rejection Ratio 2.7V≤V⁺≤12V, V_O= V⁺/2 86 100 82 dB

CMVR Common Mode Voltage Range CMRR≥80 dB –0.2 5.2 V

CMRR≥78 dB –0.2 5.2

AVOL Open Loop Voltage Gain RL= 2 kΩ(LMP7701) 100 119

V_O= 0.3V to 4.7V 96

R_L= 2 kΩ(LMP7702/LMP7704) 100 119

VO= 0.3V to 4.7V 94 dB

R_L= 10 kΩ 100 130

V_O= 0.2V to 4.8V 96

VOUT Output Voltage Swing High RL= 2 kΩto V⁺/2 60 110

LMP7701 130

R_L= 2 kΩto V⁺/2 60 120

LMP7702/LMP7704 200 mV

from V⁺

R_L= 10 kΩto V⁺/2 40 50

LMP7701 70

RL= 10 kΩto V⁺/2 40 60

LMP7702/LMP7704 120

Output Voltage Swing Low R_L= 2 kΩto V⁺/2 50 80

LMP7701 90

R_L= 2 kΩto V⁺/2 50 120

LMP7702/LMP7704 190

RL= 10 kΩto V⁺/2 30 40 mV

LMP7701 50

RL= 10 kΩto V⁺/2 30 50

LMP7702/LMP7704 100

(6)

5V Electrical Characteristics

⁽¹⁾

(continued)

IOUT Output Current^{(6) (7)} Sourcing VO= V⁺/2 40 66

V_IN= 100 mV (LMP7701) 28

Sourcing V_O= V⁺/2 38 66

VIN= 100 mV (LMP7702/LMP7704) 25

Sinking V_O= V⁺/2 40 76 mA

V_IN=−100 mV (LMP7701) 28

Sinking VO= V⁺/2 40 76

V_IN=−100 mV (LMP7702/LMP7704) 23

1.2

LMP7702 1.5 1.9

2.2 mA

LMP7704 2.9 3.7

4.6

SR Slew Rate⁽⁸⁾ A_V= +1, V_O= 4 V_PP 1.0

10% to 90% V/μs

THD+N Total Harmonic Distortion + Noise f = 1 kHz, A_V= 1, R_L= 10 kΩ 0.02 %

en Input Referred Voltage Noise Density f = 1 kHz 9 nV/√Hz

(6) The maximum power dissipation is a function of TJ(MAX),θ_JA. The maximum allowable power dissipation at any ambient temperature is P_D= (T_J(MAX)– T_A)/θ_JA. All numbers apply for packages soldered directly onto a PC Board.

±5V Electrical Characteristics

⁽¹⁾

Unless otherwise specified, all limits are guaranteed for T_A= 25°C, V⁺= 5V, V⁻=−5V, VCM= 0V, and R_L> 10 kΩto 0V.

±500 μV

LMP7702/LMP7704 ±37 ±220

±520

I_B Input Bias Current ^{(4) (5)} ±0.2 1

−40°C≤T_A≤85°C ±50

(4) (5) ±0.2 1 pA

−40°C≤TA≤125°C ±400

CMRR Common Mode Rejection Ratio −5V≤V_CM≤5V 92 138

LMP7701 88

−5V≤VCM≤5V 90 138 dB

LMP7702/LMP7704 86

(4) This parameter is guaranteed by design and/or characterization and is not tested in production.

(7)

±5V Electrical Characteristics

⁽¹⁾

(continued)

Unless otherwise specified, all limits are guaranteed for T_A= 25°C, V⁺= 5V, V⁻=−5V, VCM= 0V, and R_L> 10 kΩto 0V.

PSRR Power Supply Rejection Ratio 2.7V≤V⁺≤12V, VO= 0V 86 98

82 dB

CMVR Common Mode Voltage Range CMRR≥80 dB −5.2 5.2

CMRR≥78 dB −5.2 5.2 V

A_VOL Open Loop Voltage Gain R_L= 2 kΩ(LMP7701) 100 121

V_O=−4.7V to 4.7V 98

RL= 2 kΩ(LMP7702/LMP7704) 100 121 V_O=−4.7V to 4.7V 94

R_L= 10 kΩ(LMP7701) 100 134 dB

VO=−4.8V to 4.8V 98

R_L= 10 kΩ(LMP7702/LMP7704) 100 134 VO=−4.8V to 4.8V 97

VOUT Output Voltage Swing High RL= 2 kΩto 0V 90 150

LMP7701 170

R_L= 2 kΩto 0V 90 180

LMP7702/LMP7704 290 mV

from V⁺

R_L= 10 kΩto 0V 40 80

LMP7701 100

RL= 10 kΩto 0V 40 80

LMP7702/LMP7704 150

Output Voltage Swing Low RL= 2 kΩto 0V 90 130

LMP7701 150

R_L= 2 kΩto 0V 90 180

LMP7702/LMP7704 290 mV

from V^–

R_L= 10 kΩto 0V 40 50

LMP7701 60

RL= 10 kΩto 0V 40 60

LMP7702/LMP7704 110

I_OUT Output Current^{(6) (7)} Sourcing V_O= 0V 50 86

VIN= 100 mV (LMP7701) 35

Sourcing V_O= 0V 48 86

VIN= 100 mV (LMP7702/LMP7704) 33 mA

Sinking VO= 0V 50 84

V_IN=−100 mV 35

1.3

LMP7702 1.7 2.1

2.5 mA

LMP7704 3.2 4.2

5.0

SR Slew Rate⁽⁸⁾ AV= +1, VO= 9 VPP 1.1 V/μs

10% to 90%

THD+N Total Harmonic Distortion + Noise f = 1 kHz, A_V= 1, R_L= 10 kΩ 0.02 %

en Input Referred Voltage Noise Density f = 1 kHz 9 nV/√Hz

(6) The maximum power dissipation is a function of T_J(MAX),θ_JA. The maximum allowable power dissipation at any ambient temperature is P_D= (T_J(MAX)– T_A)/θ_JA. All numbers apply for packages soldered directly onto a PC Board.

(8)

V⁺ 1

2

3

4 5

6 7 N/C 8

-IN

+IN

V^-

OUTPUT

N/C N/C

+ - OUT

V^-

IN+

V⁺

IN-

+ -

1

2

3

5

4

CONNECTION DIAGRAMS

Figure 2. 5-Pin SOT-23 (LMP7701) Figure 3. 8-Pin SOIC (LMP7701)

Top View Top View

Figure 4. 8-Pin SOIC/VSSOP (LMP7702) Figure 5. 14-Pin SOIC/TSSOP (LMP7704)

Top View Top View

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TCV_OS (PV/°C)

-3 -2 -1 0 1 2 3

0 4 8 12 16 20

PERCENTAGE (%)

V_S = 10V -40°C dT_Ad125°C

-200 -100 0 100 200

0 5 10 15 20 25

PERCENTAGE (%)

OFFSET VOLTAGE (PV) V_S = 10V

T_A = 25°C

TCVOS (PV/°C)

-3 -2 -1 0 1 2 3

0 4 8 12 16 20

PERCENTAGE (%)

V_S = 5V -40°C dTAd125°C

-200 -100 0 100 200

0 5 10 15 20 25

PERCENTAGE (%)

OFFSET VOLTAGE (PV) VS = 5V

T_A = 25°C

TCV_OS (PV/°C)

-3 -2 -1 0 1 2 3

0 4 8 12 16 20

PERCENTAGE (%)

VS = 3V -40°C dT_Ad125°C

-200 -100 0 100 200

0 5 10 15 20 25

PERCENTAGE (%)

OFFSET VOLTAGE (PV) VS = 3V

TA = 25°C

Typical Performance Characteristics

Unless otherwise noted: T_A= 25°C, V_CM= V_S/2, R_L> 10 kΩ.

Offset Voltage Distribution TCV_OSDistribution

Figure 6. Figure 7.

Offset Voltage Distribution TCVOSDistribution

Offset Voltage Distribution TCV_OSDistribution

(10)

-1 0 1 2 3 4 5 6 -200

-150 -100 -50 0 50 100 150 200

OFFSET VOLTAGE (PV)

V_CM (V)

V_S = 5V

-40°C

25°C

125°C

-1 0 1 2 7 8 9 10 11

V_CM (V) -200

-150 -100 -50 0 50 100 150 200

OFFSET VOLTAGE (PV)

3 4 5 6 -40°C

125°C 25°C

V_S = 10V

2 4 6 8 10 12

-200 -150 -100 -50 0 50 100 150 200

OFFSET VOLTAGE (PV)

SUPPLY VOLTAGE (V) -40°C

25°C

125°C

-0.5 0 0.5 1 1.5 2 2.5 3 3.5 V_CM (V)

-200 -150 -100 -50 0 50 100 150 200

OFFSET VOLTAGE (PV)

V_S = 3V

25°C

125°C -40°C

10 1k 1M

FREQUENCY (Hz) -140

-100 -60 0

CMRR (dB)

100k 10k 100

-20

-80

-120 -40

V_S = 5V VS = 3V

V_S = 10V

-40 -20 0 20 40 60 80 100 120125 -200

-150 -100 -50 0 50 200

OFFSET VOLTAGE (PV)

TEMPERATURE (°C) 100

150

V_S = 3V

V_S = 5V

V_S = 10V

Typical Performance Characteristics (continued)

Offset Voltage CMRR

vs. vs.

Temperature Frequency

Offset Voltage Offset Voltage

vs. vs.

Supply Voltage VCM

Offset Voltage Offset Voltage

vs. vs.

VCM VCM

(11)

0 2 4 6 8 10 -500

-250 0 250 500

IBIAS (fA)

V_CM (V)

VS = 10V

-40°C

25°C

0 2 4 6 8 10

-300 -200 -100 0 100 200 300

IBIAS (pA)

V_CM (V)

V_S = 10V

85°C

125°C

0 1 2 3 4 5

-300 -200 -100 0 100 200 300

IBIAS (fA)

VCM (V)

V_S = 5V

-40°C

25°C

0 1 2 3

V_CM (V) -300

-200 0 200 300

IBIAS (pA) 100

-100

85°C

125°C

4 5

VS = 5V

0 0.5 1 1.5 2 2.5 3

VCM (V) -200

-100 0 100 200

IBIAS (fA)

V_S = 3V

-40°C

25°C

0 1 2 3

V_CM (V) -300

-200 0 200 300

IBIAS (pA)

V_S = 3V

0.5 1.5 2.5

100

-100

85°C

125°C

Typical Performance Characteristics (continued)

Input Bias Current Input Bias Current

vs. vs.

VCM VCM

Input Bias Current Input Bias Current

vs. vs.

VCM VCM

Input Bias Current vs.

V_CM Input Bias Current vs. V_CM

(12)

0 20 40 60 80 100 0

1 2 (V⁺) -2 (V⁺) -1 V⁺

VOUT FROM RAIL (V)

OUTPUT CURRENT (mA)

| |

VS = 3V, 5V, 10V T_A = -40°C, 25°C, 125C

3V

2 4 6 8 10 12

0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5

SLEW RATE (V/Ps)

SUPPLY VOLTAGE (V) FALLING EDGE

RISING EDGE

A_V = +1 VIN = 2 VPP RL = 10 k:

C_L = 10 pF

2 4 6 8 10 12

0 20 40 60 80 100 120

ISINK (mA)

SUPPLY VOLTAGE (V) 125°C

-40°C 25°C

2 4 6 8 10 12

0 20 40 60 80 100 120

ISOURCE (mA)

SUPPLY VOLTAGE (V) 125°C -40°C

25°C

2 4 6 8 10 12

0 0.2 0.4 0.6 0.8 1 1.2

SUPPLY CURRENT (mA)

-40°C

25°C

10 1k 1M

FREQUENCY (Hz) 0

40 120

PSRR (dB)

100k 10k 100

100

60

20 80

-PSRR +PSRR V_S = 10V

V_S = 5V V_S = 3V

VS = 10V VS = 5V

VS = 3V

Typical Performance Characteristics (continued)

PSRR vs. Frequency Supply Current vs. Supply Voltage (Per Channel)

Sinking Current vs. Supply Voltage Sourcing Current vs. Supply Voltage

Output Voltage vs. Output Current Slew Rate vs. Supply Voltage

(13)

1V/DIV

10 Ps/DIV V_S = 5V f = 10 kHz A_V = +10 VIN = 400 mVPP R_L = 10 k:

C_L = 10 pF

200 mV/DIV

10 Ps/DIV V_S = 5V f = 10 kHz AV = +10 V_IN = 100 mV_PP R_L = 10 k:

C_L = 10 pF

500 mV/DIV

10 Ps/DIV VS = 5V f = 10 kHz A_V = +1 V_IN = 2 V_PP R_L = 10 k:

C_L = 10 pF

20 mV/DIV

10 Ps/DIV V_S = 5V f = 10 kHz A_V = +1 VIN = 100 mVPP R_L = 10 k:

C_L = 10 pF 100

100 10k 1M 100M

FREQUENCY (Hz) -60

-20 40

GAIN (dB)

10M 1k 100k

80

60

20

0

-40 GAIN

PHASE

V_S = 5V CL = 20 pF RL = 10 k:

225

-135 -45 90 180

135

45

0

-90

PHASE (°)

125°C

-40°C 25°C

125°C -40°C

25°C

100

100 10k 1M 100M

FREQUENCY (Hz) -60

-20 40

GAIN (dB)

10M 100k

1k 80

60

20

0

-40 GAIN

PHASE

V_S = 10V C_L = 20 pF

V_S = 3V C_L = 100 pF V_S = 3V, 5V, 10V CL = 20 pF, 50 pF, 100 pF R_L = 10 k:

225

-135 -45 90 180

135

45

0

-90

PHASE (°)

Typical Performance Characteristics (continued)

Open Loop Frequency Response Open Loop Frequency Response

Large Signal Step Response Small Signal Step Response

(14)

2 4 6 8 10 12 0

20 40 60 80 100

VOUT FROM RAIL (mV)

25°C

-40°C R_L = 2 k:

2 4 6 8 10 12

0 20 40 60 80 100

VOUT FROM RAIL (mV)

25°C

-40°C R_L = 2 k:

2 4 6 8 10 12

0 10 20 30 40 50

VOUT FROM RAIL (mV)

25°C

-40°C R_L = 10 k:

2 4 6 8 10 12

0 10 20 30 40 50

VOUT FROM RAIL (mV)

25°C -40°C R_L = 10 k:

500 400 300 200 100 0

60 70 80 90 100 110 120 130 140 150

OPEN LOOP GAIN (dB)

OUTPUT SWING FROM RAIL (mV) R_L = 2 k:

R_L = 10 k: V_S = 3V

V_S = 10V V_S = 5V

1 100 100k

FREQUENCY (Hz) 0

40 120

1k 10k 10

100

60

20 80

V_S = 3V

VS = 5V

VS = 10V INPUT REFERRED VOLTAGE NOISE (nV/Hz)

Typical Performance Characteristics (continued)

Input Voltage Noise vs. Frequency Open Loop Gain vs. Output Voltage Swing

Output Swing High vs. Supply Voltage Output Swing Low vs. Supply Voltage

(15)

100 1k 10k 100k 1M FREQUENCY (Hz)

40 60 80 100 120 140

CROSSTALK REJECTION (dB)

V_S = 3V V_S = 5V V_S = 12V

0.001 0.01 0.1 1 10

V_OUT (V) 0.001

0.01 0.1 1

THD+N (%)

A_V= +1

A_V= +10 V_S = 5V f = 1 kHz R_L = 100 k:

10 100 1k 10k 100k

FREQUENCY (Hz) 0.001

0.01 0.1 1

THD+N (%)

A_V= +1 A_V= +10 V_S = 5V

V_O = 4.5 V_PP R_L = 100 k:

Typical Performance Characteristics (continued)

THD+N vs. Frequency THD+N vs. Output Voltage

Crosstalk Rejection Ratio vs. Frequency (LMP7702/LMP7704)

Figure 44.

(16)

APPLICATION INFORMATION LMP7701/LMP7702/LMP7704

The LMP7701/LMP7702/LMP7704 are single, dual, and quad low offset voltage, rail-to-rail input and output precision amplifiers each with a CMOS input stage and wide supply voltage range of 2.7V to 12V. The LMP7701/LMP7702/LMP7704 have a very low input bias current of only ±200 fA at room temperature.

The wide supply voltage range of 2.7V to 12V over the extensive temperature range of −40°C to 125°C makes the LMP7701/LMP7702/LMP7704 excellent choices for low voltage precision applications with extensive temperature requirements.

The LMP7701/LMP7702/LMP7704 have only ±37 μV of typical input referred offset voltage and this offset is guaranteed to be less than ±500 μV for the single and ±520 μV for the dual and quad, over temperature. This minimal offset voltage allows more accurate signal detection and amplification in precision applications.

The low input bias current of only ±200 fA along with the low input referred voltage noise of 9 nV/√Hz gives the LMP7701/LMP7702/LMP7704 superiority for use in sensor applications. Lower levels of noise from the LMP7701/LMP7702/LMP7704 mean of better signal fidelity and a higher signal-to-noise ratio.

National Semiconductor is heavily committed to precision amplifiers and the market segment they serve.

Technical support and extensive characterization data is available for sensitive applications or applications with a constrained error budget.

The LMP7701 is offered in the space saving 5-Pin SOT-23 and 8-Pin SOIC package. The LMP7702 comes in the 8-Pin SOIC and 8-Pin VSSOP package. The LMP7704 is offered in the 14-Pin SOIC and 14-Pin TSSOP package. These small packages are ideal solutions for area constrained PC boards and portable electronics.

CAPACITIVE LOAD

The LMP7701/LMP7702/LMP7704 can each be connected as a non-inverting unity gain follower. This configuration is the most sensitive to capacitive loading.

The combination of a capacitive load placed on the output of an amplifier along with the amplifier's output impedance creates a phase lag which in turn reduces the phase margin of the amplifier. If the phase margin is significantly reduced, the response will be either underdamped or it will oscillate.

In order to drive heavier capacitive loads, an isolation resistor, R

_ISO

, in Figure 45 should be used. By using this isolation resistor, the capacitive load is isolated from the amplifier's output, and hence, the pole caused by C

_L

is no longer in the feedback loop. The larger the value of R

_ISO

, the more stable the output voltage will be. If values of R

_ISO

are sufficiently large, the feedback loop will be stable, independent of the value of C

_L

. However, larger values of R

_ISO

result in reduced output swing and reduced output current drive.

Figure 45. Isolating Capacitive Load

INPUT CAPACITANCE

CMOS input stages inherently have low input bias current and higher input referred voltage noise. The

LMP7701/LMP7702/LMP7704 enhance this performance by having the low input bias current of only ±200 fA, as

well as, a very low input referred voltage noise of 9 nV/√Hz. In order to achieve this a larger input stage has been

used. This larger input stage increases the input capacitance of the LMP7701/LMP7702/ LMP7704. The typical

value of this input capacitance, C

_IN

, for the LMP7701/LMP7702/LMP7704 is 25 pF. The input capacitance will

interact with other impedances such as gain and feedback resistors, which are seen on the inputs of the

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1k 10k 100k 1M 10M FREQUENCY (Hz)

-10 -8 -6 -4 -2 0 2

NORMALIZED GAIN (dB)

V_S = 5V C_F = 0 pF A_V = -1

R₁ = R₂ = 100 k:

R₁ = R₂ = 30 k:

R₁ = R₂ = 10 k:

R₁ = R₂ = 1 k:

+ ¨

©

§ ¨©

-1 § 2CIN

P_1,2 = 1 R₁

1

R₂ r 1 R1

1 R2

+

2

- 4 A₀C_IN R2 -R2/R1

1 + s

¨©

§ ¨©

§ + s²

A0

CINR2

¨©

§ ¨©

§ VOUT

VIN

(s) =

A0 R1

R1+R2

C_IN R₁

R₂

V_OUT

+ - +

-

V_IN

+ -

V_OUT V_IN

R₂ R₁ A_V= - = -

C_F

amplifier, to form a pole. This pole will have little or no effect on the output of the amplifier at low frequencies and DC conditions, but will play a bigger role as the frequency increases. At higher frequencies, the presence of this pole will decrease phase margin and will also cause gain peaking. In order to compensate for the input capacitance, care must be taken in choosing the feedback resistors. In addition to being selective in picking values for the feedback resistor, a capacitor can be added to the feedback path to increase stability.

The DC gain of the circuit shown in Figure 46 is simply –R

₂

/R

₁

.

Figure 46. Compensating for Input Capacitance

For the time being, ignore C

_F

. The AC gain of the circuit in Figure 46 can be calculated as follows:

This equation is rearranged to find the location of the two poles:

(1)

As shown in Equation 1, as values of R

₁

and R

₂

are increased, the magnitude of the poles is reduced, which in turn decreases the bandwidth of the amplifier. Whenever possible, it is best to choose smaller feedback resistors.

Figure 47 shows the effect of the feedback resistor on the bandwidth of the LMP7701/LMP7702/LMP7704.

Figure 47. Closed Loop Gain vs. Frequency

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ESD R₁ IN⁺

ESD

D₁

D₂

R₂ ESD

IN^- ESD V⁺

V^- V^-

V⁺

1k 10k 100k 1M 10M

FREQUENCY (Hz) -10

-8 -6 -4 -2 0 2

NORMALIZED GAIN (dB)

V_S = 5V R₁ = R₂ = 100 k: A_V = -1

C_F = 5 pF

C_F = 3 pF

C_F = 1 pF C_F = 0 pF

(1 - A_V)² 2A₀A_VC_IN R₁

<

Equation 1 has two poles. In most cases, it is the presence of pairs of poles that causes gain peaking. In order to eliminate this effect, the poles should be placed in Butterworth position, since poles in Butterworth position do not cause gain peaking. To achieve a Butterworth pair, the quantity under the square root in Equation 1 should be set to equal −1. Using this fact and the relation between R

₁

and R

₂

, R

₂

= −A

_V

R

₁

, the optimum value for R

₁

can be found. This is shown in Equation 2. If R

₁

is chosen to be larger than this optimum value, gain peaking will occur.

(2)

In Figure 46, C

_F

is added to compensate for input capacitance and to increase stability. Additionally, C

_F

reduces or eliminates the gain peaking that can be caused by having a larger feedback resistor. Figure 48 shows how C

_F

reduces gain peaking.

Figure 48. Closed Loop Gain vs. Frequency with Compensation

DIODES BETWEEN THE INPUTS

The LMP7701/LMP7702/LMP7704 have a set of anti-parallel diodes between the input pins, as shown in Figure 49. These diodes are present to protect the input stage of the amplifier. At the same time, they limit the amount of differential input voltage that is allowed on the input pins. A differential signal larger than one diode voltage drop might damage the diodes. The differential signal between the inputs needs to be limited to ±300 mV or the input current needs to be limited to ±10 mA.

Figure 49. Input of LMP7701

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REDUCED INPUT VOLTAGE NOISE = en1²+e²n2+ +enN 2

= 1 N

1 N Nen

2 = N

N e_n

= 1 en N

I = V2± V1 R_S

V2R R + R

(V0± IRS)R V1R V0R

+ = +

R + R R + R R + R

+

R_S

Z LOAD V₁

V₂

R R

V⁺

V⁺ V^-

V^-

+ -

-

I = (V2± V1) RS A1

A2

PRECISION CURRENT SOURCE

The LMP7701/LMP7702/LMP7704 can each be used as a precision current source in many different applications. Figure 50 shows a typical precision current source. This circuit implements a precision voltage controlled current source. Amplifier A1 is a differential amplifier that uses the voltage drop across R

_S

as the feedback signal. Amplifier A2 is a buffer that eliminates the error current from the load side of the R

_S

resistor that would flow in the feedback resistor if it were connected to the load side of the R

_S

resistor. In general, the circuit is stable as long as the closed loop bandwidth of amplifier A2 is greater then the closed loop bandwidth of amplifier A1. Note that if A1 and A2 are the same type of amplifiers, then the feedback around A1 will reduce its bandwidth compared to A2.

Figure 50. Precision Current Source The equation for output current can be derived as follows:

Solving for the current I results in the following equation:

LOW INPUT VOLTAGE NOISE

The LMP7701/LMP7702/LMP7704 have the very low input voltage noise of 9 nV/√Hz. This input voltage noise can be further reduced by placing N amplifiers in parallel as shown in Figure 51. The total voltage noise on the output of this circuit is divided by the square root of the number of amplifiers used in this parallel combination.

This is because each individual amplifier acts as an independent noise source, and the average noise of independent sources is the quadrature sum of the independent sources divided by the number of sources. For N identical amplifiers, this means:

Figure 51 shows a schematic of this input voltage noise reduction circuit. Typical resistor values are:

R

_G

= 10Ω, R

_F

= 1 kΩ, and R

_O

= 1 kΩ.

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eni = en ²+e²i +et2

V^- V⁺

V_OUT R_O

R_G V_IN

R_F

V^- V⁺

R_O R_G

R_F

V^- V⁺

R_O R_G

R_F

V^- V⁺

R_O R_G

R_F

+ -

Figure 51. Noise Reduction Circuit

TOTAL NOISE CONTRIBUTION

The LMP7701/LMP7702/LMP7704 have very low input bias current, very low input current noise, and very low input voltage noise. As a result, these amplifiers are ideal choices for circuits with high impedance sensor applications.

Figure 52 shows the typical input noise of the LMP7701/LMP7702/LMP7704 as a function of source resistance where:

e

_n

denotes the input referred voltage noise

e

_i

is the voltage drop across source resistance due to input referred current noise or e

_i

= R

_S

* i

_n

e

_t

shows the thermal noise of the source resistance

e

_ni

shows the total noise on the input.

Where:

The input current noise of the LMP7701/LMP7702/LMP7704 is so low that it will not become the dominant factor in the total noise unless source resistance exceeds 300 MΩ, which is an unrealistically high value.

As is evident in Figure 52, at lower R

_S

values, total noise is dominated by the amplifier's input voltage noise.

Once R

_S

is larger than a few kilo-Ohms, then the dominant noise factor becomes the thermal noise of R

_S