Tranzistory; Transistors - Digital Library of the Silesian University of Technology

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MACTb ⁴ PART ⁴

H a c T O flin e e M3AaHMe npeACTaBnaeT co6oii neTBep- Tbim B b in yc K KaTanora TpaH3MCTopoB, laroTOBjiaeMbix b C C C P b ycnoBHHX cepMÜHoro M onbiTHoro npOM3BOA- CTBa.

riapaMeTpbi npeACTaBneHbi bBMAeTa6nnii, b KOTopbix T p aH 3 M C To pbi c r p y n n H p o s a H b i n o p a 3 A e n a M : M a n o ü , c p e A H e ü , 6 o n b iu o M m o l u h o c t h m n o / ie B b ie . B n e p e o M p a 3 fle n e B b if le n e H b i 6 e c K o p n y c H b ie , o A H o n e p e x o A H b ie , A B y x a M M T T e p H b ie m n a B M H H b ie n p w ô o p b i. B KOHuie KaTa- J i o r a n p e A C T a B n e H b i ra ô a p M T H b te M epT ejKM , n o p s A K O B b ie H O M ep a K O T o p b ix yK a s a H b i c o o T B e T C T B e H Ho b n o c n e f lH e ii rp a tjje Ta6/im <. P a 3 M ep b i H a n e p T e x c a x A a H b i 6e3 flo n y c - k o b. B 3 a u jT p M X O B a H H b ix r p a c jia x T a ô x iw u n p M B O A flT ca C o o T B e T C T B e H h o pejK M M bi M3MepeHMfl n a p a iie T p o B .

fla H H b iii K a T a n o r no 3 Bo naeT 6 b ic T p o Bb i6 p aT b Heo6- xoAH M biü np w 6 o p nnn p «A n p n 6 o p o B , 6j i h3k h x A p y r k A p y r y no KaKMM-nii6o o c h o b h u m 3HaHeHnaM sneKTpM- HecKHX napaM eTpoB.

T h i s !s the fourth edition of the transistor data sheets in which are presented the transistors both mass and pilot produced in the U.S.S.R.

The transistors are tabulated by characteristic in the following categories: low power, medium power and high power transistors, and FETs. In the first section are presented unpackaged, unijunction, dualemitter and avalanche transistors. In the final sections are referenced outline drawings having their own number. Dimensions are actual.

These data sheets permit to select a particular device o r a fam ily of devices with sim ilar characteristics.

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n E P E M E H b T P A H 3 M C T O P O B

L I S T O F T R A N S I S T O R S

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CtP . Page

CTp.

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m i5 A - r T H 5 f l 14 rT329A-TT329r 32 KT607A 50

Mn20A-Mn21 E 14 TT330fl-rT330H 30 KT603A-KT603E 50

Mn25-Mn26B 12 KT331A-KT331 T 36 KT604A-KT604E 46

ri27-n28 14 KT332A-KT332A 38 KT605A-KT605B 46

n29-n30 18 KT336A-KT336E 38 n605-n606A 46

Mn35-Mfl38A 14 KT337A-KT337B 30 KT606A-KT606E 50

Mn39-Mn41A 12 TT338A-rT338B 40 n607-ri609A ⁴⁸

Mn42-Mn42B 14 KT339A-KT339A 28 KT608A- KT608E 50

K m o i r- K m o iE 64 KT340A-KT340A 24 KT610A-KT610E 50

Kni02E-Kni02n 64 TT341A-TT341B 32 KT611A-KT611 T 48

Kni03E-Kni03M 64 KT342A-KT342r 26 TT612A 50

KT104A-KT104r 16 KT343A-KT343T 26 KT616A-KT616E 50

K n ci0 4 A -K n ci0 4 n 66 KT345A-KT345B 26 KT617A 48

m o 8 A - rT io 8 r 12 TT346A-rT346B 30 KT618A 48

rT109A-m09H 14 KT347A-KT347B 30 KT626A-KT626B 58

M n iii- M n ii3 A 12 KT348A- KT348B 36 KT627A 62

M n n 4 - M n ii6 12 KT349A-KT349B 26 KT640A 50

KT117A-KT117T 42 KT350A 24 TT701A 54

KT118A-KT118B 42 Kll350A-Kn350B 70 n701-n701E 56

KT119A-KT119E 42 KT351A-KT351E 24 ri702-n702A 54

KT120A-KT120B 34 KT352A-KT352E 24 TT703A-rT703A 54

KT201A-KT201A 18 KT354A-KT354E 40 KT704A-KT704E 54

Kn20i E-Kn2om 64 KT355A 32 KT801A-KT801E 54

KT202A-KT202T 34 KT356A-KT356E 32 KT802A 56

KT203A-KT203B 16 KT357A-KT357T 26 KT803A 56

KT208A- KT208M 16 KT358A- KT358B 22 KT805A-KT805E 56

n210E-n210B 52 KT359A-KT359B 36 rT806A-TT806A 56

n213-n215 52 KT360A-KT360B 38 KT807A- KT807B 54

n2i6-n2i7r 52 KT361A-KT361 E 24 KT808A 54

KT301-KT301 >K 18 TT362A-rT362E 32 KT809A 54

Kn301E 66 KT363A-KT363E 32 TT810A 56

Kn302A-Kn302B 66 KT364A-KT364B 36 KT812A-KT812B 58

n302-ri306A 52 KT366A- KT366B 40 TT813A-rT813B 58

Kn303A-Kri303E 66 KT367A 32 Kn901A 68

Kn304A 66 KT368A-KT368E 30 KT902A 56

rT305A-rT30SB 22 KT369A-KT369E 36 Kn902A-Kri902B 68

Kn30Sfl-Kn305H 68 KT370A-KT370E 40 KT903A-KT903E 58

KT306A-KT306A 28 KT371A 34 KI1903A-Kn903B 68

Kn306A-Kri306B 70 KT372A-K.T372B 34 KT904A- KT904E 60

KT307A-KT307T 36 KT373A-KT373T 26 KI1904A 68

n307-n309 18 KT375A-KT375B 24 rT905A-rT905E 58

rT308A-TT308B 22 TT376A 32 KT907A- KT907E 60

TT309A- TT309E 20 TT383A-rT383B 34 KT908A-KT908E 56

rT310A-TT310E 22 KT391A 34 KT909A-KT909T 60

rT311E-rT311M 28 n401-ri403A 20 KT911A-KT911T 62

KT312A-KT312B 22 rT402A-TT402r 44 KT912A-KT912B 58

rT313A-TT313B 28 rT403A-rT403HO 44 KT913A-KT913B 62

KT315A-KT315M 24 rT404A-TT404r 44 KT914A 60

KT316A-KT316A 30 rT405A-rT405r 44 KT916A 62

KT317A-KT317B 34 n416-11416E 20 KT917A 56

KT318A-KT318E 38 n422-n423 20 KT918A-KT918E 62

KT319A- KT319B 34 KT501A-KT501M 16 KT919A-KT919B 62

T T 3 2 0 A -rT 3 2 0 B 22 KT601A 46 KT920A-KT920T 60

TT321A-TT321 E 20 n601M-n602AH 46 KT921A 58

TT322A-rT322B 20 KT602A-KT602T 48 KT922A-KT922A 58

KT324A -K T324E KT32SA-KT325B KT 326A -K T326E TT328A- TT328B KTE31 5A-KTE315E

38 32 28 28 34

rT323A-TT323B 46 KT925A-KT925T

KT926

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M A J I O f i E E C K O P n y C H b l E

M O I M H O C T M U N P A C K A G E D

L O W P O W E R

HH3KOMACTOTHblE

HM3KOM ACTOTH blE LOW FREQUENCY

LOW FREQUENCY K T 1 2 0 A -K T 1 2 0 B

M m i 4 - M n i i 6

M n 2 5 - M n 2 6 E CPEflHEM MACTOTbl

M r i3 9 -M n 4 1 A MEDIUM FREQUENCY

m o 8 A - r n o 8 r K T 2 0 2 A -K T 2 0 2 T

M n m - M n i i 3 A

H r i2 0 A -M r i2 1 E BblCOKOMACTOTHblE

M r i4 2 -M n 4 2 B HIGH FREQUENCY

M n 3 5 - M n 3 8 A K T 3 1 7 A -K T 3 1 7 B

n 2 7 - n 2 8 K T 3 1 9 A - K T319B

r T 1 0 9 A -r T 1 0 9 M K T 3 4 8 A -K T 3 4 8 B r T H 5 A - m i 5 A K T 3 6 9 A -K T 3 6 9 B

CPEflHEti MACTOTbl K T 3 0 7 A -K T 3 0 7 T

MEDIUM FREQUENCY K T 3 6 4 A - K T364B

K T 1 0 4 A -K T 1 0 4 T K T 3 5 9 A - K T359B K T 2 0 3 A -K T 2 0 3 B K T 3 31A -K T 331 T K T 5 0 1 A -K T 5 0 1 M K T 3 3 2 A -K T 3 3 2 A KT208A -KT208M K T E 3 1 5 A -K T E 3 1 5 S n 2 9 - n 3 0

KT201 A - K T 2 0 1 A n 3 0 7 - n 3 0 9

CBM MICROWAVE BblCOKOH ACTOTH bl E K T 3 6 0 A -K T 3 6 0 B

HIGH FREQUENCY K T 3 1 8 A - K T318E

K T 3 01-K T 301 >K K T 3 3 6 A -K T 3 3 6 E T T 3 2 1 A -T T 3 2 1 E K T 3 2 4 A -K T 3 2 4 E n4 16 -n 4 16 E K T 3 6 6 A -K T 3 6 6 B r T 3 2 2 A -T T 3 2 2 B K T 3 7 0 A -K T 3 7 0 S

n 4 2 2 - n 4 2 3 K T 3 5 4 A -K T 3 5 4 E

n 4 0 1 - n 4 0 3 A

r T 3 0 9 A - r T 3 0 9 E nPOHME TPAH3HCTOPbl

MISCELLANEOUS TRANSISTORS K T 3 1 2 A - K T 3 1 2 B

KT358A-KT358B r T 3 3 8 A -lT 3 3 8 B T T 3 1 0 A -rT 3 1 0 E K T 1 1 9 A -K T 1 1 9 E T T 3 0 8 A -rT 3 0 8 B K T 1 1 7 A - K T 1 17T

rT 3 2 0 A -T T 3 2 0 B K T 1 1 8 A - KT118B

T T 3 0 5 A - TT 305B K T 3 5 0 A K T 3 5 1 A -K T 3 5 1E K T 3 5 2 A - K T352E K T 3 7 5 A -K T 3 7 5 E K T 3 1 5 A -K T 3 1 5 M K T 3 6 1 A -K T 3 6 1 E K T 3 4 0 A -K T 3 4 0 A K T 3 4 2 A -K T 3 4 2 T K T 3 4 3 A -K T 3 4 3 T

c p e a h e h

K T349A -KT349B

K T 3 7 3 A -K T 3 7 3 T M O L 1 4 H O C T H

K T 3 5 7 A -K T 3 5 7 T M E D I U M P O W E R

CBM HM3KOHACTOTHblE

MICROWAVE LOW FREQUENCY

K T 3 4 5 A - KT345B T T 4 0 3 A - r T 4 0 3 K )

T T 3 2 8 A -rT 3 2 8 B r T 4 0 2 A - r T 4 0 2 r

K T 3 2 6 A -K T 3 2 6 E r T 4 0 4 A - r T 4 0 4 r

K T 3 3 9 A -K T 3 3 9 A T T 4 0 5 A - r T 4 0 5 r

T T 3 1 3 A -rT 3 1 3 B BblCOKOMACTOTHblE

r T 3 1 1 E - r T 3 1 1 H HIGH FREQUENCY

K T 3 0 6 A -K T 3 0 6 A n 6 0 1 H -r i6 0 2 A H

K T 3 4 7 A -K T 3 4 7 B n 6 0 5 -n 6 0 6 A

K T 3 3 7 A - K T337B K T 6 0 1 A

T T 3 4 6 A - TT 346E K T 6 0 4 A -K T 6 0 4 E

K T 3 1 6 A -K T 3 1 6 A KT368A-KT368E

K T 6 0 5 A - K T605E K T 6 1 1 A -K T 6 1 1 T r T 3 3 0 A -r T 3 3 0 M

K T 3 2 5 A -K T 3 2 5 B

r i6 0 7 -r i6 0 9 A K T 6 0 2 A -K T 6 0 2 T

T T 3 7 6 A K T 6 1 7 A

K T 3 5 5 A K T 6 0 3 A -K T 6 0 3 E

K T 3 6 3 A -K T 3 6 3 B K T 6 0 8 A -K T 6 0 8 B

K T 3 67A K T 6 1 6 A -K T 6 1 6 E

r T 3 2 9 A - T T 3 2 9 r K T 6 18A

T T 3 4 1 A -T T 3 4 1 B T T 3 2 3 A -rT 3 2 3 B

CBM MICROWAVE K T 3 5 6 A -K T 3 5 6 E

T T 3 6 2 A -rT 3 6 2 E K T 6 0 6 A -K T 6 0 6 E

K T 3 7 1A K T 6 1 0 A -K T 6 1 0 E

K T 3 7 2 A -K T 3 7 2 B T T 6 1 2 A

rT383A -TT383B K T 6 40A

K T 3 9 1A K T 6 0 7 A

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n O J I E B b l E T P A H 3 M C T O P b l FI E L D - E F F E C T T R A N S IS T O R S K m o i r - K m o iE K m o 2 E - K n io 2 n K n i0 3 E - K m 0 3 M K n c io 4 A - K n c io 4 n Kn2oi E-K n 2 o m Kn301E Kn302A-Kn302B Kn303A-Kn303E KI1304A Kn305fl-Kn30SH Kn306A-Kn306B Kn3S0A-Kn350B

Kn901A

Kn902A-Kri902B Kn903A-KI1903B Kn904A

B o n b i u o k ! M O I M H O C T M H I G H P O W E R HM3KOMACTOTHblE LOW FREQUENCY n210E-n210B n 2 i3 - n 2 i5 ri2i6-n2i7r n302-n306A TT701A rT703A-rT703fl KT704A-KT704S CPEflHEM MACTOTbl MEDIUM FREQUENCY n702-n702A KT807A-KT807S KT808A KT809A

KT801A-KT801E KT802A

rT806A-rT806fl

n701-n701E

TT810A KT803A KT805A-KT805B BblCOKOM ACTOTH bl E HIGH FREQUENCY KT902A KT908A-KT908E KT917A KT926

rT905A-I"T905E KT626A-KT626B KT912A-KT912B KT921A

KT903A-KT903E KT812A- KT812B TT813A-rT813B KT922A-KT922fl CBM

MICROWAVE KT904A-KT904E KT907A-KT907E KT909A-KT909T KT92SA-KT92ST KT914A KT920A-KT920T KT911A-KT911 T KT918A-KT918E KT913A-KT913B KT916A

KT919A-KT919B KT627A

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0 E 0 3 H A H E H M E n A P A M E T P O B P A R A M E T E R S Y M B O L S

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Cc EMKocTb KonneKTopHoro nepexoAa Collector capacitance

Co EMKocTb 3MMTTepHoro nepexoAa Emitter capacitance

Cl1s BxoAHaü CMKocTb nonesoro TpaH3ncTopa Input capacitance

Cl2s ripoxoAHan eMKOCTb no/ieBoro TpaH3MCTopa Transfer capacitance

Cdso EMKOCTb CTOK-MCTOK npM pa30MKHyT0M

BblBOAC

Drain-to-source capacitance, gate open

C22s BbixoAHan eMKOCTb nonesoro TpaH3ncTopa Output capacitance

Cgso EMKOCTb 3aTBOp-MCTOK npM paJOMKHyTOM

BblBOflC

Gate-to-source capacitance, drain open

Cl EMKOCTb Harpy3KM Load capacitance

fh21e, fh21b ripeAe/ibHan naCTOTa kos cfïïj) mlim eH Ta nepeAaMM TOKa b cxeMe c o6ihmm SMHTTepOM H 6a30M COOTBeTCTBeH HO

Forward current transfer ratio

cut-off frequency in common-emitter and common-base configuration, respectively

fT TpaHMHHaa HaCTOTa K03<}>ct>MUMeHTa nepeAasu TOKa

Transition frequency

fmax MaKCHManbHan nacTOTa reHepauwM Maximum frequency of oscillation

fp npeAejibHaa MacTOTa K03ij)4,M14,ieHTa ycwneHMji no moiuhocth

Power gain cut-off frequency

F Ko3<j)(j)MUHeHT ujyMa Noise figure

4

H

hue. hi 1 b BxoAHoe conpoTMB/ieHne b pewHMe Manoro encarta b cxeMe c o6lhmm SMMTTepOM M 6a3oii COOTBeTCTBeHHO

Small-signal value of the input impedance in common-emitter and common-base configuration, respectively

h21c Ko3(t>4>nuneHT nepeAasM TOKa b cxeMe C o6lUMM 3MHTTepOM b pexMMe Ma/ioro CMTHa/ia

Small-signal value of the forw ard current transfer ratio in common-emitter configuration

h21e MoAynb KostjjtjjHUiieHTa nepeAanw TOKa Ha BbICOKOft HaCTOTe

The modulus of the current gain at high frequencies

h21 E OraTHHecKKH K03tf)4,nnneHT nepeAaHM TOKa B cxeMe C o6mHM SMHTTepOM b pe>KHMe 6onbLuoro cwrHana

Static value of the forward current transfer ratio in common-emitter configuration

h22e. h22b BbixoAHaa npoBOAMMOCTb b pe>KnMe Manoro curHana b cxeMe c o6lijkm SMHTTepOM H 6a3oii COOTBeTCTBeH HO

Small-signal value of the output admittance in common-emitter and common-base configuration, respectively

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0 5 0 3 H A H E H M E n A P A M E T P O B P A R A M E T E R S Y M B O L S

lc max, Icm max MaKCHManbHo A onycT H M biii t o k K o n neK T o pa, nOCTOflHHblM H HMnyjlbCHblii COOTBGTCTBGHHO

Maximum collector current, DC and pulse, respectively

max, IBM max MaKCHManbHo A o nycT H M biii t o k 6a3bi, nOCTOflHHblH M HM nyjlbCHblii COOTBeTCTBeHHO

Maximum base current, D C and pulse, respectively

Ie maxi lEM max MaKCHManbHo flonyCTMMbiii t o k SMMTTepa, nOCTOflHHblli H HMny/lbCHblM COOTBeTCTBeHKO

Maximum emitter current, D C and pulse, respectively

ICBO 0 6 p a T H b i i i t o k K o n n e K T o p a Collector cut-off current

(reverse current)

Iebo 0 6 p a T H b l i i TOK BMHTTepa Emitter cut-off current (reverse current)

ICBS

4

H a n a n b H b i f i t o k K o n n e K T o p a Collector cut-off current

ICEV ^T^{o k} K o n n e K T o p a 3aKp b iT oro TpaH3HCTopa Collector current of a closed transistor

Id max, IRM max MaKCHManbHo A o nycT H M biii n o cT o sH H b iii h HMnynbCHblH TOK CTOKa COOTBeTCTBeHHO

Maximum drain current, D C and pulse, respectively

Idss H an an bH b ifi t o k CTOKa D rain current at zero gate voltage

less. Ig,SS To k yTenKH 3aTBopa Gate-to-source reverse current

Ig d o 0 6 p a T H b i i i t o k n e p e x o A a 3aTB0p-CT0K npH P a30MKHyT0M BblBOAe

Gate-to-drain leakage current with source open

IdSX, iD(off) O c T a T O M H b l i i T O K C T O K a Drain residual current

6

IcA Tok KonneKTopa b naBHHHOM pewHMe Collector avalanche current

lEF(av) max CpeAHHM TOK 3MMTTepa OTKpblTOTO oAHonepexoAHoro TpaH3HCTopa

Typical emitter current of an open unijunction transistor

lEFA max AMnnnTyAHoe 3HaMeHwe BMMTTepHoro TOKa Peak point emitter current

Ie b2o 0 6 PaTHblii TOK 3MMTTepa Emitter cut-off current (reverse current)

Ic b j o; Ic b2o 06paTHbiii t o k KonneKTopa (6a3a 1

h 6a3a 2 COOTBeTCTBeHHO)

Collector cut-off current (reverse current), base one and base two, respectively

Ion Tok 8KnK>MeHHfl On current

loff Tok BbiKnioMeHHS Off current

Ie, max MaKCHManbHo AonycTHMbiii tok (oAHoro) sMHTTepa

Maximum emitter (one) current

Ib, max MaKCHManbHo AonycTHMbiii tok (oah o h) 6a3bi Maximum base (one) current

Le, (V) Tok 3MHTTepa 3aKpbiToro TpaH3MCTopa Emitter current of a closed transistor

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0 E 0 3 H A H E H M E fl A P A M E T P O B P A R A M E T E R S Y M B O L S

Pc maxi Pm r M a K C M M a n b H O A o n y c T M M a a M o u i H o c T b

Ha K o n n e K T o p e , n o c r o a H H a a m M M n y n b C H a a C O O T B e T C T B e H H O

Maximum collector power dissipation, C W and pulse, respectively

Pout. Pin BblXO AH aa M BXOAHaR MOUJHOCTb TpaH3MCTOpa COOTBeTCTBeHHO

Output and input power, respectively

P cA i M o m H O C T b H a K o n n e K T o p e B n a B M H H O M pe>KM n e

Maximum collector avalanche power dissipation

Pds max, PrM max M a K C M M a n b H O A o n y c T M M a a nocroaHHaa h H M n y n b C H a a p a c c e M B a e M a a M o u jH O C T b noneBoro T p a H 3 M C T o p a C O O T B e T C T B e H H O

Maximum C W and pulse power dissipation, respectively

8

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Rthja, Rlhjc TennoBoe co n p o T H B n e H n e TpaH3MCTopa n e p e x o A - O K p yw arom aa cp eA a h n e p e x o A - K ?p n y C COOTBeTCTBeHHO

Therm al resistance, junction-to-ambient and junction-to-case, respectively

Rb e B H e u jH e e co n p o T M B n eH n e MejKAy 6a30Ü h 3MMTTepoM

Extrinsic base-to-emitter resistance

rb ' b C o n p o T H B n e H n e 6a3bt Base resistance

rCEsal C o n p o T H B n e H n e Me>KAy K on neKT opoM h SMMTTepoM b pewMMe HaCbimeHMa

Collector-to-emitter saturation resistance

rDS(on) C onp O T H BneH M e CTOK-MCTOK B OTKpblTOM

COCTOaHMH TpaH3HCTOpa

Drain-to-source resistance of an open transistor

Rc b B H e u jH e e co n p o T K B n eH w e Me>KAy Kon neK T o po M m 6a3oü

Extrinsic collector-to-base resistance

Rl C o n p o T M B n e H H e Harpy3KM Load resistance

r 0 C o n p o T H B n e H w e O T K p b iT o ro TpaH3MCTopa b pe>KMMe Kntona

Resistance of an open transistor

RB2B, ConpoTMBneHHe MexAy 6a30Ü 1 m 6a3oñ 2 Base one-base two resistance

tamb max MaKCMManbHO AonycTM M aa T eM n ep aT yp a o K p y w a to m e ii cpeAbt

Maximum ambient temperature

tj max MaKCMManbHO AonycTM M aa T e M n ep aT yp a n e p e x o A a

Maximum junction temperature

*P flnM TenbHOCTb MMnynbca Pulse width

ts Bp eM a paccacbtBaHwa C a rrie r storage time

tr Bp eM a HapacTaHMa MMnynbca Rise time

tl B p eM a nep eKntoneH M a Total switching time

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0 E 0 3 H A H E H M E n A P A M E T P O B P A R A M E T E R S Y M B O L S

U c B max* ^CBM max MaKCMManbHo A onycTM M oe H an P a>KeHHe M ew Ay K on neKT opoM h 6a3oii, nocTOHHHoe

h MMnynbCHoe c o o t b c t c t b c hh o

M a x im u m co llecto r-to -b ase v o lta g e , D C an d p u lse d , r e s p e c tiv e ly

U c E max* U c E M max MaKCMManbHo AonyCTMMoe Hanpaw eH M e M e K A y Kon neK T o po M m 3m m t t cPo m, n0CT0HHH0e m MMnynbCHoe cooTBeTCTBeH H o

M a x im u m co lle c to r- to - e m itte r y o lta g e , D C an d p u lsed , re s p e c tiv e ly

U C E V Hanpa)KeH M e M e » A y K on neKT opoM m

3MHTTepOM SaKpblTOTO TpaH3MCTOpa

C o lle c to r- to - e m itte r v o lta g e o f a closed tr a n s is to r

UbE max MaKCMManbHo AonyCTMMoe H anpaw eH M e Me>KAy 3MMTTepOM H 6a3oii

M a x im u m b ase-to -em itter v o lta g e

U c E s a t H a n p a w e H M e Me>KAy Kon neKT o po M M SMMTTepOM B pejKMMe HaCbimeHMR

C o lle c to r- to - e m itte r s a tu r a tio n v o lta g e

C 03 m s H an p u w e H M e M ew A y 6a3oii m3MMTTepoM

b pe>KMMe Hacbim eHM s

B ase - to - e m itte r s a tu r a tio n v o lta g e

Ec H a n p a w e H M e MCTOHHMKa nMTaHMfl

K o n neK T o pa

C o lle c t o r s o u r c e v o lta g e

UgD max MaKCMManbHo A o n y cT K M o e H anpaw eH M e 3aTBOP -CTOK

M a x im u m g ate -to -d rain v o lta g e

U DS max MaKCMManbHo AonyCTMMoe HanpajKeHwe CTOK-MCTOK

M a x im u m d ra in - to - so u rce v o lta g e

UGS max MaKCMManbHo AonyCTMMoe H anpaw eH M e 33TBOp-M CTOK

M a x im u m g ate-to -so u rce v o lta g e

U GjS max, U GjS max MaKCMManbHo AonyCTMMoe Hanpaw eH M e 3aTBOp 1 - MCTOK M 3aTBOp 2 - MCTOK COOTBeTCTBeHHO

M a x im u m g a te o n e - s o u r c e , g a te tw o - s o u r c e v o lta g e , re s p e c tiv e ly

^G-jDmax, U G2D niax MaKCMManbHo AonyCTMMoe HanpnweHM e 3aTBOp 1 - CTOK M 3aTBOP 2 - CTOK COOTBeTCTBeHHO

M a x im u m g a te o n e - d r a in , g a te t w o - d r a in v o lta g e , r e s p e c tiv e ly

UG-,G2 max MaKCMManbHo AonyCTMMoe Hanpflw eHM e M ew Ay 3aTBopaMM

M a x im u m g a te o n e - g a te tw o v o lta g e

UGS(off) HanpsweHMe OTCeMkm G a te - to - so u rce cu t o ff v o lta g e

U n H an p n w e H M e ujyMa N o is e v o lta g e

U (br)ce llp o 6 M B H o e H an p a x e H M e Me)KAy K onneKTopoM M SMMTTepOM

B r e a k d o w n v o lta g e , co llecto r-to -e m itte r

10

Ua HanpaxceHM e b naBMHHOM pe>KMMe Avalanche voltage

U (V) 3 a n M p a K > m e e H anpaw eH M e Cut-off voltage

U B2^B,max MaKCMManbHo AonyCTMMoe H an psw eH M e 6a3bi 1 M 6a3bi 2

Maximum base one-base two voltage

U e B2(V) max MaKCMManbHo AonyCTM M oe H anpaw eH M e Me)KAy 3MMTTeP OM M 6a30M 2 B 3anOpHOM HanpaaneHMM

Maximum emitter-base two voltage (non-conducting condition)

Uo P l a A e H M e HanpflJKeHMfl Ha OTKpbiTOM

TpaH3HCTope b p e«M M e K n K w a

Voltage drop across an open transistor

Uconlr HanpjDKeHM e Ha y n p a B n a ra a tH X n e p e x o A a x Voltage across control junctions

U c B , contr max MaKCMManbHo AonyCTMMoe 3anMpaK>mee H an p jiK eH M e (yn p aB n e H M e ) M ew Ay K on neK T o po M m 6a3oii 1

Maximum cut-off (control) collector-base one voltage (non-conducting condition)

Ue*| E2^(V)max MaKCMManbHo AonyCTMMoe H an paw eH w e MejKAy 3MMTTepOM 3 aK p b lT o ro TpaH3MCTOpa

b KnKOHeBOM pe>KMMe

Maximum emitter one-emitter two voltage of a closed transistor in switching mode

^ E,g, max MaKCMManbHo AonyCTM M oe H anpaw eH M e M e « A y 3MMTTepOM 1 M 6a3oii 1

Maximum emitter one-base one voltage

Y22c B b ix o flH a a np osoAM M ocTb b cx e M e c o6uumm S m a ll- s ig n a l f o r w a r d tr a n s a d m it t a n c e S M M T T e p o M b pejKM M e M a n o r o c w r H a n a i n c o m m o n - e m i t t e r c o n f i g u r a t i o n

K.n.A. Collector efficiency

(8)

o T P A H 3 M C T O P b l M A J I O M M O L I J H O C T H L O W P O W E R T R A N S I S T O R S

Tun Type

fr ^thja Ü S

a

;>

MHz °c/mw

Pe

max f i t max

mW

npeije/ibtibie donnbie Maximum ratings

[ t o m b = 2 5 * 1 0 ° c )

max

UcB

max

^{^C£}

max

^U^se^. ^Ic

max

IC H

max

w A

P à

J/ox t*

Lom6

mcrx

°c

9 sicK njpui/ecK ue m ponem pb/

v m

IE '

I

y//,

I

V ' I

^mA*

'/ & / /

1ns

^ ae

r s

H M 3 K O H A C T O T H b l E L O W F R E Q U E N C Y

M m i4 0,1* 150 60 60

M n ii5 0,1* 150 30 30

M n n 6 0,5* 150 15 15

Mri25 0,2* 0,2 200 40 40

Mri25A 0,2* 0,2 200 40 40 MI125B 0,5* 0,2 200 40 40

Mn26 0,2* 0,2 200 70 70

MI126A 0,2* 0,2 200 70 70 Mri26E 0,5* 0,2 200 70 70

Mn39 0,5* 0,2 150 15 15

Mn39B 0,5* 0,2 150 15 15

Mn40 1,0* 0,2 150 15 15

Mfl40A 1,0* 0,2 150 30 30 M n 4 i 1,0* 0,2 150 15 15 MI141A 1,0* 0,2 150 15 15

TT108A 0,5* 0,8 75 10

TT108B 1* 0,8 75 10

m o 8 r 1* 0,8 75 10

M n m

0,5* 0,5 150 20 20 M n n i A 0,5* 0,5 150 10 10 M n i i i B 0,5* 0,5 150 20 20 M m i 2 0,5* 0,5 150 10 10

M n m 1,0* 0,5 150 10 10

Mni13A 1,2* 0,5 150 10 10 o 0 0 0 0 0

10 10 10 10 10 10

10 10 10

10 ' so*

300*

400*

300*

400*

1504 1504 150^

150^

1504 1504

50 50 50 50

20;

1 0 0*

120 > 9*

120 9-45*

120 15-100*

75 13-25*

75 20-40*

75 30-80*

75 13-25*

75 20-40*

75 30-80*

85 > 12*

85 20-60*

85 20-40*

85 30-60*

85 50-100*

80 20-50*

80 35-80*

80 60-130*

80 110-250*

120 10-25*

120 10-30*

120 15-45*

120 35-105*

20 20 20 35 35 35

5 5 5 5 5 5

5 5 5 5

2.5 2.5 2.5 5 5 5

300 300 300

20 2,5 1,5 20 2,5 1,5 20 2,5 1,5 35 1,5 1,0 35 1.5 1,0 35 1,5 1,0

5 1 3,3 5 1 3,3 5 1 3,3 5 1 3,3 5 1 3,3 5 1 3.3

5 1 2*

10 10 10

75 75 75 75 75 75

15 15 15 15 15 15

10 10 10 10

30 15 10

40 40 40 70 70 70

10 5 10 5 5 5

♦ Pe>KMM nepeKnioHeHMfl

■ TexHOJiorwii:A - cnnaBHaa; D - Am^yaMOHHaa; C - KOHBepcMOHHaa; A D - cnnaBH0-An4><j3y3H0HHaa; P - nnaHapHas; PE - njiaHapHo-oriMTaK- cuanbHaa; M P - Meaa-nnaHapHaa

12

o

E te c tricc / porcrmcters ( t Q//J^ - 25 t- io 'c )

Ge p-n-p (tt)

75 40 0,25 100 1,2 160 20 2,5 20 20 1.5-103 25 A 1a

75 40 0,25 100 1,0 160 20 2,5 20 20 1.5-103 25 A 1a

75 40 0,25 100 1,0 160 20 2,5 20 20 1,5-103 25 _I A 1a

75 70 0,25 100 1,2 160 35 1,5 15 35 1,5-103 25 ^{• E} A 1a

75 70 0,25 100 1,0 160 35 1,5 15 35 1,5-103 25 A 1a

30 5 220 5 1 60 5 0,5 A 1a

30 5 220 5 1 60 5 0,5 12 1k 0,5 A 1a

30 5 220 5 1 60 5 0,5 A 1a

5000 5 0,465 5 50 A 3

Si n-p-n

3 5 170 5 18 1 K 0,5 A 1a

3 5 170 5 A 1a

♦ Switching mode

■ Technology: A - allo y; D - diffusion; AD - alloy-diffusion; C - conversion; P - planar; PE - planar-epitaxial; M P - mesa-planar

13

(9)

o T P A H 3 M C T O P b l M A J I O M MOL14HOCTM L O W P O W E R T R A N S I S T O R S

Tun Type

fr

f m

a

th/a ^Pc _am p *

O í

max

MHz mW

flpeije/ibHbie donnbie Maximum ratings

( ¿ m í = & t 1 0 ° c )

UC8 max max

^{4 ce}

w

7 ;

f a ' .

¿ ¿ A

Ub e

max

^It

c max L _CM

max

m A

P É

t *

ÍL

Lontg

max

° c

d/ieKmpui/ecKue napoMempbi

h .

h v e

V E

*

wm

f t

^*ip

^Hz

'ZtJL

P É _{h }}

mA.

•ns

•HE

Q

I

V>

< .'A A .

i

mA' '¿A

‘zzs

*

1ne

h s

kso I * _CBS

I* * CEY

fiA á!

H M3 K O M A C T O T H bl E L O W F R E Q U E N C Y

M ri20A 2* 0,33 150 30 20 30 3004 85 50-150* 5 25

M ri20B 1,5* 0,33 150 30 20 30 300+ 85 80-200* 5 25

r-iri20B 1,5* 0 33 150 40 30 40 300+ 85 20-100* 5 25

M n 2i r 1,0* 0,33 150 60 35 40 300^ 85 20-80* 5 25

M Ü 21A 1,0* 0,33 150 50 30 40 3004 85 60-200* 5 25

M n 21 E 0,7* 0,33 150 70 35 40 300^ 85 30-150* 5 25

Mn42 1* 0,2 200 15 15 3 150* 85 20-35 1 10*

Mri42A 1* 0,2 200 15 15 3 150* 85 30-50 1 10*

M1142E 1* 0,2 200 15 15 3 150* 85 45-100 1 10*

50 30

50 40

50 60

50 50

50 70

25** 15 25** 15 25** 15

Mn35 0,5* 150 15 15 0

M n36A 1,0* 150 15 15 0

Mn37 1,0* 150 15 15 0

Mri37A 1,0* 150 30 30 0

M n37E 1,0* 150 30 30 0

Mri38 2,0* 150 15 15 0

MI138A 2,0* 150 15 15 0

20;150* 75 10-125* 5

20;150* 75 15-45* 5

20 ; 150* 75 15-30* 5 20; 150* 75 15-30* 15 20; 150* 75 25-50* 15

20; 150* 75 25-55* 5

20 ; 150* 75 45-100* 5

5 1 3,3 30 5

n27 1,0* 30 5 5 0,5 6 75 20-100* 5 0,5 3 5

n27A 1,0* 30 5 5 0,5 6 75 20-170* 5 0,5 3 5

ri28 5 ,0 * 30 5 5 0,5 6 75 20-200* 5 0,5 3 5

TT109A 1,0 1,8 30 10 6 200 20 80 20-50* 5 1 5 1 3,3 5 5

TT109B 1,0 1.8 30 10 6 200 20 80 35-80* 5 1 5 1 3,3 5 5

m 09B 1,0 1,8 30 10 6 200 20 80 60-130* 5 1 5 1 3,3 5 5

m o 9 r 1,0 1,8 30 10 6 200 20 80 110-250* 5 1 5 1 3,3 5 5

m o 9 f l 3,0 1,8 30 10 6 200 20 80 20-70* 1,2 0,1 5 1 3,3 2 1,2

TT109E 5,0 1.8 30 10 6 200 20 80 50-100* 1.2 0,1 5 1 3,3 2 1,2

rT109>K 1,8 30 10 6 200 20 80 > 100 1,5 0,01 = 5 1 3,3 1 1,5

m o 9 n 1 1,8 30 10 6 200 20 80 20-80* 5 1 5 1 3,3 5 5

m i 5 A 1* 50 20 20 30 45* 20-80 1 25

I 2'7 25 40 20

TT115& 1* 50 30 20 30 45* 20-80 1 25 2,7 25 40 30

m i 5 B 1* 50 20 20 30 45* 60-150 1 25 10-«* 2,7 25 40 20

m i 5 r 1 * 50 30 20 30 45* 60-150 1 25 2,7 25 40 30

m i 5 f l 1 * 50 20 20 30 45* 125-250 1 25 ’ 2,7 25 40 20

♦ PejKHM nepexniOMeHHR

■ TexHonorMa : A - cnnaBHan; D - AHi^tjjyîHOHHaH; C - KOHBepcMOHHas; A D - cnnaBHO-An4>(|>y3noHHaH; P - nnaHapHan; PE - nnaHapHooriMTaK- CManbHas; M P - Me3a-nnaHaPHaa

14

o

E le c tr ic e / param eters ( t a/n¿ = 25 t- 10 ^{' c )}

Ge p-n-p

50 30 0,3 300; 60*

50 40 0,3 300; 60*

0,15 10 0,4

0,2 10 0,4

(t.) 2.5-103 1.5-103 1.0-103

10 10 10

A 1a

G e n-p-n

15 5

220 5 1 60 5 0,5

10 1k 0,5 A 1a

A 1a

Ge

^C^L ¹ ^c ¹ _p

50 5 1

5 5 5000 5 30 5 0,465

3 1,2 5000 5 40 1,2 0,465

5 5

5 5 5000 5 30 5 0,465

10 1k 0,5 A 1

5 1 K 0,5 A 1

A 4

12 1 K 0,5 A 4

A 1a

♦ Switching mode

■ Technology: A - alloy; D - diffusion; A D - alloy-diffusion; C - conversion; P - planar; PE - planar-epitaxial; M P - mesa-planar

(10)

o T P A H 3 M C T O P b I MAJTIOM M O I H H O C T M L O W P O W E R T R A N S I S T O R S

Tun Type

fr Rthja Kzis

a

;>

MHz °tfmw Pc max

P * max.

mW

flpeije/ibHöie doHHbie Maximum ratings

( t a r a i = * * * w ° ° )

UcB

max max

^{U s £}

max

^{I c}

awx

JCM

max

mA

P

8 V k

L

t *

tUGX

3 / ic K m p u y e c K u e n a p a M é m p b i

i I

¿A

m ^u

V/A ï i ï r

*

ï

f e i / *

XCBS

I* *CEV

ftA

C P E A H E M M A C T O T b l M E D I U M F R E Q U E N C Y

KT104A 5* 0,4 150 30 30 10 10 50 100* 9-36* 5 1 1 30

KT104B 5* 0,4 150 15 15 10 10 50 100* 20-80* 5 1 1 15

KT104B 5* 0,4 150 15 15 10 10 50 100* 40-160* 5 1 1 15

KT104 r 5* 0,4 150 30 30 10 10 50 100* 15-60* 5 1 1 30

KT203A 5* 150 60 60 2 30 10;50* 150 > 9* 5 1 300 50 1 60

KT203E 5* 150 30 30 2 15 10;50* 150 30-90* 5 1 300 30 1 30

KT203B 5* 150 15 15 2 10 10;50* 150 15-100* 1 300 15 1 15

KT501A 5 350 15 15 10 10 500 150 20-60 1 30 2500* 5 5 55*

KT501B 5 350 15 15 10 10 500 150 40-120 1 30 2500» 5 5 55*

KT501B 5 350 15 15 10 10 500 150 80-240 1 30 2500* 5 5 55*

KT501 r 5 350 30 30 10 10 500 150 20-60 1 30 2500* 5 5 55*

KTSO Ifl 5 350 30 30 10 10 500 150 40-120 1 30 2500* 5 5 55*

KT501 E 5 350 30 30 10 10 500 150 80-240 1 30 2500* 5 5 55*

KT501 >K 5 350 45 45 10 20 500 150 20-60 1 30 2500* 5 5 55*

KT501M 5 350 45 45 10 20 500 150 40-120 1 30 2500* 5 5 55*

KT501K S 350 45 45 10 20 500 150 80-240 1 30 2500* 5 5 55*

KT501H 5 350 60 60 10 20 500 20-60 1 30 2500* 5 5 55*

KT501M 5 350 60 60 10 20 500 150 40-120 1 30 2500* 5 5 55*

KT208A 200 20 20 10 20 150;300* 500 150 20-60 1 30* 1 20

KT208B 200 20 20 10 20 150;300* 500 150 40-120 1 30* 1 20

KT208B 200 20 20 10 20 150;300* 500 150 80-240 1 30* 1 20

KT208T 200 30 30 10 20 150;300* 500 150 20-60 1 30* 1 30

KT208fl 200 30 30 10 20 150;300* 500 150 40-120 1 30* 1 30

KT208E 200 30 30 10 20 150;300* 500 150 80-240 1 30* 1 30

KT208W 200 45 45 10 20 150;300* 500 150 20-60 1 30* 1 45

KT208M 200 45 45 10 20 150;300* 500 150 40-120 1 30* 1 45

KT208K 200 45 45 10 20 150;300* 500 150 80-240 1 30* 1 45

KT208TI 200 60 60 10 20 150;300* 500 150 20-60 1 30* 1 60

KT208M 200 60 60 10 20 150;300* 500 150 40-120 1 30* 1 60

♦ PeîKHM ilGpCK/1 KOMEH Ha

■ T e x H o n o r H H : A - cn n a sH aa ; D - ÄH4><j)y3MOHHaa; C - KOHBepcHOHHaa; AD - cn^aBHo-AM<j>4>y3MOHHa,,; P - nn aH apH aa; PE - nnaHapHo-an-MTaK- cw anbHaa; M P - Me3a-nnaHapHaa

E le c tr ic a l param eters ( t Q ^ - 25 t 10 ^{’ c )}

Si p-n-p

10 0,5 10; 2* 1

10 0,5 10; 1* 1

30 1

15 1 4*

10 1

0,4 200;60*

0,4 300;60*

0,4 300; 60*

0,4 300;60*

0,4 300; 60*

0,4 300;60*

20 0,3 300; 60* 1,5 20 0,3 300; 60* 1,5 20 0,3 300; 60* 1,5 20 0,3 300; 60* 1,5 20 0,3 300; 60* 1.5 20 0,3 300; 60* 1,5 20 0,3 300; 60* 1.5 20 0,3 300; 60* 1,5 20 0,3 300; 60* 1,5 20 0,3 300; 60* 1.5 20 0,3 300;60* 1,5

10 5 10

50 10 0,5 0,5 100

50 10 0,5 0,5 100 50 10 0,5 0,5 100 50 10 0,5 0,5 100 50 10 0,5 0,5 100 50 10 0,5 0,5 100

50 10 0.5 0,5 100

50 10 0,5 0,5 100

PE 36

PE 6

PE 7

PE 5

Switching mode

Technology: A - alloy; D - diffusion; AD - alloy-diffusion; C - conversion; P - planar; PE - planar-epitaxial; M P - mesa-planar

(11)

o T P A H 3 M C T O P b l M A J I O M M O I H H O C T M L O W P O W E R T R A N S I S T O R S

C P E f l H E M H A C T O T b l M E D I U M F R E Q U E N C Y

n29 5* 30 12-* 10* 1004 75 20-50 0,5 20 4 12

n29A 5* 30 12-* 10^ 100^ 75 40-100] 0,5 20 4 12

ri30 10* 30 12-* 104 1004 75 80-180 0,5 20 4 12

KT201A 10 150 20 20 2 20 20 100* 100* 20-60 1 5* 1 2 1 20

KT201B 10 15) 20 20 2 20 20 100* 100* 30-90 1 5* 1 2 1 20

KT201B 10 150 10 10 2 10 20 100* 100* 30-90 1 5* 1 2 1 10

KT201 r 10 150 10 10 2 10 20 100* 100* 70-210 1 5* ¹ ² ¹ ¹⁰

KT201fl 10 150 10 10 2 10 20 100* 100* 30-90 1 5* ¹ ² ¹ ¹⁰

11307 20 250 80 80 100 3 30 120* 70* 16-50* 20 10 2 10 4 70 20 10 20 80

n307A 20 250 80 80 100 3 30;120* 70* 30-90* 20 10 2 10 4 70 20 10 20 80

n307B 20 250 80 80 100 3 15 120* 70* 50-150* 20 10 2 10 4 70 20 10 20 80

n307B 20 250 60 (0 100 3 30 120* 70* 50-150* 20 10 2 10 4 70 20 10 20 60

n307T 20 250 80 80 100 3 15 120* 70* 16-50* 20 10 2 10 4 70 20 10 20 80

n308 20 250 120 120 100 3 15 120* 70* 30-90* 20 10 2 10 4 70 20 10 20 120

n309 20 250 120 120 100 3 30;120* 70* 16-50* 20 10 2 10 4 70 20 10 20 120

B b l C O K O H A C T O T H bl E H I G H F R E Q U E N C Y

KT301 30** 0,6 150 20 2C 0 3 10 120 20-60* 10 3 1 20 3 10 3* 3 10 ;o

KT301A 30** 0,6 150 20 20 0 3 10 120 40-120* 10 3 1 20 3 10 3* 3 10 20

KT331B 30** 0,6 150 30 30 0 3 10 120 10-32* 10 3 1 20 3 10 3* 3 10 30

KT301B 30** 0,6 150 30 30 0 3 10 120 20-60* 10 3 1 20 3 10 3* 3 10 30

KT301 r 60** 0,6 150 20 20 0 3 10 120 10-32* 10 3 1,5 20 3 10 3* 3 10 20

KT301A 60** 0,6 150 20 20 0 3 10 120 20-60* 10 3 1.5 20 3 10 3* 3 10 20

KT301 E 60** 0.6 150 20 20 0 3 10 120 40-120* 10 3 1,5 20 3 10 3* 3 10 20

KT301 >K 60** 0,6 150 20 20 0 3 10 120 80-300* 10 3 1,5 20 3 10 3* 3 10 20

♦ PcjkmM nepeKriKJHeHMfl

K TexHonorwa : A - cnnaBHaa; D - AH4>4>>'3HOHHaa; C - KOHBepCHOHHaa; AD - cn/iaaKo-AHt^y^0^ ^ ' P - n^aHaPHas; PE - nnaHapHo-snHTaK- CHanbHaa; M P - Mew-nnaHapHafl

o

E le c tric a I param eters ( t Q ^ - 25 ^±- 10 ^{'c )}

Ge p-n-p

4 12 0,2 20; 2* 6 6 1 20 6 1 A 1a

4 12 0,2 20; 1* 6 6 1 20 6 1 A 1a

4 12 0,2 20; 0,5* 6 6 6 1 20 6 1 A 1a

Si n-p-n

20 5 10 PE 8

20 5 10 15 1 K 0,2 PE 8

10 3

DP 16

10 3

DP 16

10 3 DP 16

10 3

DP 16

10 3

DP 16

10 3 DP 16

10 3

DP 16

10 3 3 10; 1* 2,5 10 20 2 0,5 80 P 36

10 3 3 10; 1* 2.5 10 20 2 0,5 80 P 36

10 3 3 10; 1* 2,5 10 20 2 0,5 80 P 36

♦ Switching mode

■ Technology: A - allo y; D - diffusion; AD - alloy-diffusion; C - conversion; P - planar; PE - planar-epitaxial; M P - mesa-planar

(12)

T P A H 3 M C T O Pbl M A J I O M M O I U H O C T M L O W P O W E R T R A N S I S T O R S

Tun Type

fr

rh2lS

; «I/770X

% a

Pc

max

P *O i

max.

MHz mW

flpeije/ibtibie doHHbte Maximum ratings (tomb = t 10 ^{° c)}

Uc8 max Uce

max w

'/y

f e 'y

¿ A

max Us£ Ic max

¡CM max

m A

P ^{i r}

t *

LomS m ax

°c

d/icKrrrpuyecKue napoMempht

m\h. I

v>

¿A

I I

^mAy

'¿A

‘¿zs

t lne\

r s

kdO

I *

CBS xctv

V *

fiA

m

B b l C O K O H A C T O T H b l E H I G H F R E Q U E N C Y

TT321A 60 0,25 '

60 50 0,1 4 2004; 2-10’* 30 85 20-60 3 500* 3 20 15 500 60

TT321B 60 0,25 60 50 0,1 4 2004; 2-10’* 30 85 40-120 3 500* 3 20 15 500 60

IT321B 60 0,25 160; 60 50 0,1 4 200^; 2-1 O’* 30 85 80-200 3 500* 3 20 15 500 60

TT321 T 60 0,25 20 W 45 40 0,1 2,5 200+; 2-10‘* 30 85 20-60 3 500* 3 20 15 500 45

rT321,q 60 0,25 45 40 0,1 2,5 200+; 2-10’* 30 85 40-120 3 500* 3 20 15 500 45

TT321 E 60 0,25

■ 45 40 0,1 2,5 2004; 2.10” 30 85 80-200 3 500* 3 20 15 500 45

n416 40 0,4 12 1 3 25;120* 5 85 20-80* 5 5 2 20 5 5 5 5 3 10

I1416A 60 0,4 100;

['360" 12 1 3 25;120* 5 85 60-125* 5 5 3 20 5 5 5 5 3 10

n416E 80 0,4 12 1 3 25;120* 5 85 90-250* 5 5 4 20 5 5 5 5 3 10

TT322A 80 0,7 50 25 25 10 10 55* 30-100 5 1 4 25

TT322E 80 0,7 50 25 25 10 10 55* 50-120 5 1 4 25

IT322B 80 0,7 50 25 25 10 10 55* 20-120 5 1 4 25

n422 50 100 10 1 20 70 24-100* 5 1 2,5 20 5 5 5 5 5 5

ri423 100 100 10 1 20 70 24-100* 5 1 5 20 5 5 5 5 5 5

n401

30** 0,64 100 10 10 1 1 20 85 16-300* 5 5 5 1 5 10 5

n402 60** 0,64 100 10 10 1 1 20 85 16-250* 5 5 5 1 5 5 5

R403 120** 0,64 100 10 10 1 1 20 85 30-100* 5 5 5 1 5 5 5

n403A 120** 0,64 100 10 10 1 1 20 85 16-200* 5 5 5 1 5 5 5

TT309A 120 50 10 10 10 70 20-70 5 1 6 20 38 5 1 5 5 5

rT309E 120 50 10 10 10 70 60-180 5 1 6 20 38 5 1 5 5 5

TT309B 80 50 10 10 10 70 20-70 5 1 4 20 38 5 1 5 5 5

TT309r 80 50 10 10 10 70 60-180 5 1 4 20 38 5 1 5 5 5

TT309/H 40 50 10 10 10 70 20-70 5 1 2 20 38 5 1 5 5 5

TT309E 40 50 10 10 10 70 60-180 5 1 2 20 38 5 1 5 5 5

♦ PejKMM nepeKntoweHMfl

■ TexMonorMs: A — cnnaBHaa; D — ,nM<Jj4>y3MOHHafl; C — KOHBepcMOHHas; AD — cnnaBHO-fln4><}>y3MOHHaH; P — nnaHapHan; PE - nnanapHO-anHTaK- CHanbHaa; M P - Me3a-nnaHapHas

20

o

E le c tr ic a l param eters ( t amb ~ 25 ± 10 ^{°c )}

Ge p-n-p

2,5 700;140* 1,3 600 10 15* 80 10 5 0,5 600 1-10» 700 C 2

2,5 700 ; 70* 1,3 600 10 15* 80 10 5 0,5 600 1 • 103 700 c 2

2,5 700; 35* 1,3 600 10 15* 80 10 5 0,5 600 1 -103 700 c 2

2,5 700;140* 1,3 600 10 15* 80 10 5 0,5 600 1-103 700 c 2

2,5 700;70* 1,3 600 10 15* 80 10 5 0,5 600 1 -103 700 c 2

2,5 700;35* 1,3 600 10 15* 80 10 5 0,5 600 1-10J 700 c ²

150 2 2 50; 10 0,7 500 5 5 8 5 5 1 40 1-103 50; 4* AD 2

150 2 2 50; 10 0,5 500 5 5 8 5 5 1 40 1 • 103 50; 4* AD 2

150 2 2 50; 10 0,5 500 5 5 8 5 5 1 40 1-103 50; 4* AD 2

50 5 1 1,8 5 10 4 1.6M 1 AD 10a

100 5 1 1,8 5 10 4 1,6M 1 AD 10a

200 5 1 2,5 5 10 4 1,6M 1 AD 10a

1000 5 5 10 5 5 10 1,6M 1 AD 2

500 5 5 10 5 5 10 1,6M 1 AD 2

100 3500 5 15 5 5 AD 2

100 1000 5 10 5 5 AD 2

100 500 5 10 5 5 AD 2

500 5 5 10 5 5 D 6

500 5 5 10 5 5 6 1,6M 1 D 6

1000 5 5 10 5 5 D 6

1000 5 5 10 5 5 6 1.6M 1 D 6

1000 5 5 10 5 5 D 6

♦ Switching mode

■ Technology: A - allo y; D - diffusion; A D - alloy-diffusion; C - conversion; P - planar; PE - planar-epitaxial; M P-m esa-planar

(13)

o T P A H 3 M C T O P b l M A J I O M M O I M H O C T M L O W P O W E R T R A N S I S T O R S

B b l C O K O H A C T O T H blE H I G H F R E Q U E N C Y

KT312A 80 0,4 } ¹⁵ ¹⁵ 0,1 4 30 150 12-100 2 20 4 20 5 10 10

KT3126 120 0,4 \ 225;

15 15 0,1 4 30 150 25-100 2 20 6 20 5 10 10

KT312B 120 0,4 | 450*

15 15 0,1 4 30 150 50-250 2 20 6 20 5 10 10

KT358A 80 0,7 ) 15 15 0,1 4 30; 60* 1 120 10-100 5,5 20 4 20 5 10 15

KT3585 120 0,7 ( 100;

30 30 0,1 4 30; 60* 1 120 25-100 3,5 20 6 20 5 10 30

KT358B 120 0,7 j 200*

15 15 0,1 4 30; 60* 1 120 50-280 5,5 20 6 20 5 10 15

TT310A 120 20 12 10 10 10 75 20-70 5 1 6 20 5 38 5 1 3 5 5

TT310E 120 20 12 10 10 10 75 60-180 5 1 6 20 5 38 5 1 3 5 5

TT310B 160 20 12 10 10 10 75 20-70 5 1 8 20 5 38 5 1 3 5 5

r T 3 i o r ¹⁶⁰ 20 12 10 10 10 75 60-180 5 1 8 20 5 38 5 1 3 5 5

TT310A 80 20 12 10 10 10 75 20-70 5 1 4 20 5 38 5 1 3 5 5

IT310E 80 20 12 10 10 10 75 60-180 5 1 4 20 5 38 5 1 3 5 5

TT308A 90 0,25 20 12 1 3 50 ;120* 5 85 20-75 1 10 4,5 20 5 2 5

TT308B 120 0,25 I 150;

20 12 1 3 50 ;120* 5 85 50-120 1 10 6 20 5 2 5

TT308B 120 0,25 1360*

20 12 1 3 50 ;120* 5 85 80-200 1 10 6 20 5 2 5

TT320A 80 0,225 I 20 12 1 3 150;300* 5 90 20-80 1 10 4 20 10 10 20

TT3205 120 0,225 I 203;

( 1 *W 20 11 1 3 150;300* 5 90 50-120 1 10 6 20 10 10 20

TT320B 160 0,225

I

²⁰ ⁹ ¹ ³ ^150;300* ⁵ ⁹⁰ ^80-250 ¹ ¹⁰ ⁸ ²⁰ ¹⁰ ¹⁰ ²⁰

TT305A 140 0,8 75 15 15 1,5 40;100* 10 85 25-80 1 10 7 20 10 6** 15

TT305B 160 0,8 75 15 15 1,5 40;100* 10 85 60-180 1 10 8 20 10 6** 15

TT305B 160 0,8 75 15 15 0,5 40 ;100* 10 85 40-120 1 10 8 20 10 4; 6*’* 15

♦ Pc>KMM nepCKHKiHeHMil

■ T e x H o n o r n s : A - cn naBH an; D - AM4>4)y3MOHHa,,; C - KOHBepCMOHHas; A D - cnnaBHO-AM(j3(j>y3MOHHafl; P - nn aH apH aa; PE - nnaHapHo-anMTaK- CManbHas; M P - Me3a-nnaHapHaa

22

o

Si n-p-n

10 4 500 10 5 10 5 1 20 P 13a

10 4 0,5 20; 2* 1,64 500 10 5 10 5 1 20 P 13a

10 4 0,35 20; 2* 1,64 500 10 5 10 5 1 20 P 13a

10 4 0,8 20; 2* 1,1 500 10 5 PE 14

10 4 0,8 20; 2* 1,1 500 1.0 5 PE 14

10 4 0,8 20; 2* 1,1 500 10 5 PE 14

Ge p-n-p

2 50; 10 0,7 300 5 5 4 5 5 3 1,6M 1 AD 11

2 50; 10 0,7 300 5 5 5 5 5 4 1,6M 1 AD 11

2 50; 10 0,7 500 5 5 5 5 5 4 1,6M 1 AD 11

Ge p-n-p

50 2 10; 1* 0,5 400 5 5 8 5 5 1 25 1-103 50; 4* AD 2

50 2 10; 1* 0,5 400 5 5 8 5 5 1 25 1-103 50; 2* AD 2

50 2 10; 1* 0,5 500 5 \ 5 8 5 5 1 25 1 • 103 50; 1,25* 8 1,6M 5 AD 2

100 2 1,7 200; 10 0,5 500 5 5 8 5 5 1 25 0,4 10; 1* D 2

100 2 1,7 200;10 0,5 500 5 5 8 5 5 1 25 0,5 10; 1* D 2

100 2 1,7 200; 10 0,5 500 5 5 8 5 5 1 25 0,6 10; 1* D 2

30 1,5 0,5 10 0,7 500 5 5 7 5 5 0,5 50 3-103 10 D 6

30 0,5 300 5 5 5,5 5 5 0,5 50 6 1,6M 5 D 6

♦ Switching mode

■ Technology: A - allo y; D - diffusion; A D - alloy-diffusion; C - conversion; P - planar; PE - planar-epitaxial; M P - mesa-planar

(14)

o T P A H 3 M C T O P b l M A J I O M M O L U H O C T M L O W P O W E R T R A N S I S T O R S

Tun Type

ft rh2t8

f* * /mx

MHz

npe$e/ibnbie doHHbte Maximum ratings (tan/h ~ 2 ^{S ±} 10 ^{° c)}

Pc max

p *

“^h m x .

m W Uc b m aA

4

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max max

^U^b^£ ^{I c}

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B b l C O K O H A C T O T H blE H I G H F R E Q U E N C Y

KT350A 100 0,6 200 20 15

KT351A 200 0,6 200 20 15

KT351B 200 0,6 200 20 15

KT352A 200 0,6 200 20 15

KT352B 200 0,6 200 20 15

KT375A 0,5 I 200; 60 60

KT375B 0,5 I 400* 30 30

KT315A 25) 0,67 150 25

KT315B 250 0,67 150 20

KT315B 250 0,67 150 40

KT315T 250 0,67 150 35

KT315A 250 0,67 150 40

KT315E 250 0,67 150 35

KT315>K 150 0,67 100 15

KT315H 150 0,67 100 60

KT361A 250 0,67 150 25 25*

KT361B 250 0,67 150 20 20*

KT361B 250 0,67 150 40 40*

KT361 T 250 0,67 150 35 35*

KT361A 150 0,67 150 40 40*

KT361 E 150 0,67 150 35 35*

KT340A 300 150 5 5

KT340B 300 150 20 20

KT340B 300 150 15 15

KT340T 300 150 15 15

KT340A 300 150 15 15

10

10 10

0,1 0,1

600* •10J 150 20-200 1 500

400* 4 150 20-80 1 300

400* 4 150 50-200 1 300

200* ■10> 150 25-120 1 200 200* • 10’ 150 70-300 1 200

100;200* 1 125 10-100 2 20 100;200* 1 125 50-280 2 20

100 120 20-90 10 1

100 120 50-350 10 1

100 120 20-90 10 1

100 120 50-350 10 1

100 120 20-90 10 1

100 120 50-350 10 1

50 120 30-250 10 1

50 120 30 10 1

120 20-90 10 1

120 50-350 10 1

120 20-90 10 1

120 50-350 10 1

120 20-90 10 1

120 50-350 10 1

50 85* 100-150 1 10*

50 85* > 100 1 10*

50; 200* 85* > 35 2 200*

75; 500* 85* > 16 2 500*

50 85* > 40 1 10*

2 2

2.5 2.5

2.5 2.5 2.5 2.5 2.5 2.5 1.5 1.5

2,6 2.5 2.5 2.5 2.5 2.5

20

100 100

100 100 100 100 100 100 100 100

100 100 100 100 100 100

10

10 10

5 5

40 40 40 40 40 40

10

10 10

60 30

10 10 10 10 10 10 10 10

10 10 10 10 10 10

♦ Pe)KMM riepeKmoHeHMH

■ TexHonorwfl: A - cnnaBHaa; D - Amj>4>y3noHHaii; C - KOHBepcMOHHas; AD - cnnaBH0-fln4><{)y3H0HHafl; P - nnaHapHaa; PE - nnaHapHo-annTaK- cvtanbHafl; M P - ne3a-nnaHapHa«

o

E le c tr ic a l parameters ( I ant¿ - 25 t 10 ^{'C )}

Si p-n-p

0,2 10

0,25 10

0,4 200

0,6 500

0,3 10

10 4 0,5 500;50* 1,25

10 4 0,6 400;10* 1,1 10 4 0,6 400;10* 1,1

10 4 0,6 200;20*;3* 1,1 10 4 0,6 200; 20*; 3* 1,1

1 5 0,4 10; 1

30 5 0,4 20; 2* 1,1 30 5 0,4 20; 2* 1,1 30 5 0,4 20; 2* 1,1 30 5 0,4 20; 2* 1,1

30 5 1 20; 2* 1,0

30 5 0,5 20; 2* 0,9

30 5

30 5 0,4 20; 2* 1

30 5 1,0 20; 2* 1

300 10

500 10

1000 10

500 10

1000 10

500 10

250 10

1000 10

45 5

60 5

85 5

150 5

70 5 5-10 1 100

15 5 5-10 1 30

Si n-p-n

10 10 10 10 10 10 10 10

Si p-n-p

10 10 10 10 10 10

3.0 3.7 3.7 3.7 6.0

10 10 10 10 10 10

Si n-p-n

150 1 0 0;10*

0; 25 3; 1*

5 10 5 7 10 5

5 10 5 7 15 5

5 10 5 7 75 5

PE 7

PE 12 PE 12

PE 15 PE 15 PE 15 PE 15 PE 15 PE 15 PE 15 PE 15

PE 15 PE 15 PE 15 PE 15 PE 15 PE 15

P 7

♦ Switching mode

■ Technology; A - alloy; D - diffusion; A D - alloy-diffusion; C - conversion; P - p lan ar; PE - planar-epitaxial; M P - mesa-planar

(15)

o T P A H 3 kl C T O P bl M A J I O M M O L M H O C T M L O W P O W E R T R A N S I S T O R S

Tun Type

fr

f*

hn

% a

imax

?* *

Pc max P *

O í

max,

MHz

^{m W}

flpe^e/iöHbie doHHb/e Maximum ratings

( i a m b = & - * o ° c )

UcB

maA max max

^{I I}

c max 1CM wax

mA

P ^{ÍL ,}

lo m t

mcrx

°C

9 n e x m p u y e c K u e nap o M em p b /

g

B b I C O K O M A C T O T H blE H I G H F R E Q U E N C Y

0,5 25 0,5 20 0,5 15 0,5 25

KT342A 300 0,5 250 30 10

KT3426 300 0,5 250 25 10

KT342B 300 0,5 250 10 10

KT342T 300 0,5 250 60 10

50;300*

50; 300*

50:300*

40 150 100-250 5 1

40 150 200-500 5 1

40 150 400-1000 5 1

40 150 50-125 5 10

KT343A 300 0,5 150 17 10 4 50 150 > 30* 0,3 10

KT343B 300 0,5 150 17 10 4 50 150 > 50* 0,3 10

KT343B 300 0,5 150 9 10 4 50 150 > 30* 0,3 10

KT343T 300 0,5 150 17 10 4 50; 150* 150 > 20* 1.0 10

KT349A 300 0,6 200 20 15 10 4 40* 1-103 150 20-80 1 10 3 100 10

KT349E 300 0,6 200 20 15 10 4 40* 1-103 150 40-160 1 10 3 100 10

KT349B 300 0,6 200 20 15 10 4 40* M O 3 150 120-300 1 10 3 100 10

KT357A 300 0,7 100 6 6 3,5 40 120 20-100 0,5 10* 3 100 10*

KT357B 300 0,7 100 6 6 3,5 40 120 60-300 0,5 10* 3 100 10*

KT357B 300 0,7 100 20 20 3,5 40 120 20-100 0,5 10* 3 100 10*

KT357T 300 0,7 100 20 20 3,5 40 120 60-300 0,5 10* 3 100 10*

KT373A 300 0,6 150 30 30 10 5 50; 200* 50 150 100-250 5 1 3 100 5

KT373B 300 0,6 150 25 25 10 5 50; 200* 50 150 200-600 5 1 3 100 5

KT373B 300 0,6 150 10 10 10 5 50; 200* 50 150 500-1000 5 1 3 100 5

KT373I" 300 0,6 150 60 60 10 5 50; 200* 50 150 50-125 5 1 3 100 5

1 1 1 1

1:1,5<

1:1,5"

1:1,5

5 5 5 5

0,05 0,05 0,05 0,05

10 10 7 10

10; 15 10; 15 10; 15

6 6 20 20

25 20 10 25

C B H

M I C R O W A V E

KT345A 350 1,1 20 20 10 4 200:300* 10 150 > 20* 1 100 3,5 100 10

KT345B 350 1,1

Co—*■ o o o o *-•

20 20 10 4 200;300* 10 150 > 50* 1 100 3,5 100 10

KT345B 350 1,1 20 20 10 4 200;300* 10 150 > 70* 1 100 3,5 100 10

20 20 20

♦ PewHM nepeKriK>4eHHH

■ TexHonorwa : A - cn n a B H aa; D - An4>4)y3HOHHa>i; C - KOHBepcHOHHaa; A D - cnnaBHo-AM^KtjyjHOHHaa; P - nnaH apH an; PE - nnaHapHo-snMTaK- cuanbHan; M P - MC3a-nnaHapHas

26

o

Si n-p-n

30 5 0,1 10; 1* 0,9 8 5 10 PE 7

30 5 0,2 10; 1* 1,1 8 5 10 PE 7

Si p-n-p

0,3 10; 1* 6 5 10 0 8 10 10 PE 7

0,3 10; 1* 6 5 10 0 8 20 10 PE 7

0,3 10; 1* 6 5 10 0 8 10 10 PE 7

1 150;15* 6 5 10 0 8 15 10 PE 7

1 4 0,3 10; 1* 1.2 6 5 5-10 0 8 PE 7

1 4 0.3 10; 1* 1,2 6 5 5-10 0 8 PE 7

1 4 0,3 10; 1* 1,2 6 5 5-10 0 8 PE 7

5 3,5 0,3 10; 1* 1 7 5 5 0 10 150 10; 1* PE 14

5 3,5 0,3 10; 1* 1 7 5 5 0 10 250 10; 1* PE 14

5 3,5 0,3 10; 1* 1 7 5 5 0 10 150 10; 1* PE 14

5 3,5 0,3 10; 1* 1 7 5 5 0 10 250 10; 1* PE 14

30 5 0,1 10; 1* 0,9 8 5 10 PE 14

30 5 0,2 10; 1* 1,1 8 5 10 PE 14

1 4 0,3

100;10*

1,1 1,1 1,1

15 5 10 0 30 70

100;10*

PE 16

Switching mode

Technology: A - allo y; D - diffusion; A D - alloy-diffusion; C - conversion; P - p lan ar; PE - planar-epitaxial; M P - mesa-planar

(16)

o T P A H 3M C T O P b l M A J I O M M O I H H O C T M

L O W P O W E R T R A N S I S T O R S O

Tun Type

ilpede/ibHùie doHHb/e Maximum ratings {tomb = & * 10 ^«c)

fr

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M I C R O W A V E

TT328A 400 50 15 15 5 0,25 10

TT328B 300 50 15 15 5 0,25 10

KT326A 400 0,6 250 20 15 100 4 50

KT326E 400 0,6 250 20 15 100 4 50

KT339A 300 250 40 25 4 25

KT339B 250 250 25 12 4 25

KT339B 450 250 40 25 4 25

KT339T 250 250 40 25 4 25

KT339fl 250 250 40 25 4 25

TT313A 300 100 15 15 0,5 0,2 30

TT313B 450 100 15 15 0,5 0,2 30

TT313B 350 100 15 15 0,5 0,2 30

TT311 E 250 0,35 150 12 12 2 50

TT311>K 300 0,35 150 12 12 ^rb

^ <11C 2 50 IT311H 450 0,35 150 10 10 "E

1,5 50

KT306A 300 150 15 10 3 4 30

KT306B 500 150 15 10 3 4 30

KT306B 300 150 15 10 3 4 30

KT306T 500 150 15 10 3 4 30

KT306fl 200 150 15 10 3 4 30

55* 20-200 5 3 4 100 2

55* 40-200 5 3 3 100 2

55* 10-50 5 3 3 100 2

120* 20-70 2 10* 4 100 10

120* 45-160 2 10* 4 100 10

150 > 25 10 7 3 100 150 > 25 10 7 2,5 100 150 > 15 10 7 4,5 100 150 > 15 10 7 2,5 100 150 > 40 10 7 2,5 100

70 20-250* 5 5 3 100 5

70 20-250* 5 5 4,5 100 5

70 30-170* 5 5 3,5 100 5

70 15-80 3 15 2,5 100 5

70 50-200 3 15 3 100 5

70 100-300 3 15 4,5 100 5

150 20-60 1 10* 3 100 10

150 40-120 1 10* 5 100 10

150 20-100 1 10* 3 100 10

150 40-200 1 10* 5 100 10

150 30-150 1 10* 2 100 10

10 10 10

0,5 0,5

15 15 15

20 20

40 25 40 40 40

100 100 100

0,1 0,1

0,25 0,25 0,25

0,5 15 0,5 15

30 5 5 0,5 15

1,2 1,2

1 0 ; 1 * 1 0 ; 1 *

5 12 50 0,2

10 12 15 2 0,3

10 10 15 1,5 0,3

0,3 0,3

15; 1,5*

1 0; 1* 1 0; 1*

5 10 10

450 450

25 25 50 100 150

0,6 0,6 0,6

75 100 100

500 500 500

75 5

40 5

75 5

10 2

Ge

1.5

p-n-

5

P

10

10 2 1.5 5 10

10 2 1,5 5 10

5 10

Si p

5

-n-p

5 10

5 10 5 5 10

10 7

Si n

2

-p-n

5 10

10 7 2 5 10

Ge p-n-p

2.5 2.5 2.5

G e n-p-n

0,15 0,15 0,15

2,5 5 5

5 10 0,25 14

5 10 0,25 18

180M

5 5 2,5 5 10 0,25 5 50 20; 2*

Si n-p-n

5 5 10 0 4,5 30 10; 1*

5

5|

⁵ ⁵ ¹⁰ ^{0 4,5}

5 5 Is 5 5 10 0 4,5

5 5] 5 5 5 0 4,5

PE 10a PE 10a PE 10a

PE 5

PE 106 PE 106 PE 106 PE 106 PE 106

AD 17

P 4

PE 136 PE 136 PE 136 PE 136 PE 136

4 PewHM nepeKnioMeHMs

■ T e x H o n o r v ia : A - cn naB H aa; D - AM<43cJ>y3HOHHaji; C - KOHBepcMOHHaa; AD - ^ nasH C -A m ^ y3*101^ 3*; P ~ nn aH apH aa; PE - nnaHapHo-sriMTaK- cuanbHan; M P - Meaa-nnaHapHaa

♦ Switching mode

■ Technology: A - alloy; D - diffusion; AD - alloy-diffusion; C - conversion; P - p lan ar; PE - planar-epitaxial; M P - mesa-planar 28

(17)

o T P A H 3 M C T O P bl M A J I O M M O L 4 H O C T H L O W P O W E R T R A N S I S T O R S

Tun Type

T lp eije/ibH bie d on n ée M axim um ra tin g s (tom b = * W ° CJ

fr fk ii f Z

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M I C R O W A V E

KT347A 500 0,5 150 15 15 10 4 50;110* 150 30-400 0,3 10 5 100 10 1 15

KT347B 500 0,5 150 9 9 10 4 50; 110* 150 30-400 0,3 10 5 100 10 1 9

KT347B 500 0,5 150 6 6 10 4 50;110* 150 50-400 0,3 10 5 100 10 1 6

KT337A 500 0,6 150 6 6 10 4 30 150 > 30 0,3 10 5 100 10 1 6

KT337E 600 0,6 150 6 6 10 4 30 150 > 50 0,3 10 6 100 10 1 6

KT337B 600 0,6 150 6 6 10 4 30 150 > 70 0,3 10 6 100 10 1 6

TT346A 700 40 15 15 5 0,3 10 85 > 10 10 2 7 100 2 10 15

TT3465 550 40 15 15 5 0,3 10 85* > 10 10 2 5,5 100 2 10 15

KT316A 600 150 10 10 3 4 30; 50* 100* 20-60 1 10* 6 100 10 0,5 10

KT3165 800 150 10 10 3 4 30; 50* 100* 40-120 1 10* 8 100 10 0,5 10

KT316B 800 150 10 10 3 4 30; 50* 100* 40-120 1 10* 8 100 10 0,5 10

KT316T 600 150 10 10 3 4 30; 50* 100* 20-100 1 10* 6 100 10 0,5 10

KT316/H 800 150 10 10 3 4 30; 50* 100* 60-300 1 10* 8 100 10 0,5 10

KT368A 900 225 15 15 3 4 30; 60* 500 125* 50-300 5 10* 9 100 10 6 5 10 0,5 15

KT368B 900 225 15 15 3 4 30; 60* 500 125* 50-300 5 10* 9 100 10 6 5 10 0,5 15

rT 330fl 500 1 50 10 TT330>K 1000 1 50 10

TT330M 500 1 50 10

1,5 20 1,5 20 1,5 20

60 30-400 5 5 5 100 5

60 30-400 5 5 10 100 5

60 10-400 5 5 5 100 5

5 10 5 10 5 10

♦ PewMM nepeKnKîHCHHH

■ TexHonorMn : A - cn/iaBHan; D - AM<j>|}jy5MOHHaR; C - KOHBepcMOHHaa; AD - c^^aBHO-AH^}Jct5y3MOHHa,,! P _ nnaHapHas; PE - nnaHapHo-3nMTaK- cwanbHaa; M P - Me3a-nnaHapHas

30

o

Si p-n-p

10 4 0,3 10; 1* 6 5 10 0 8 25 10 PE 7

10 4 0,3 10; 1* 6 5 10 0 8 40 10 PE 7

5 4 0,2 10; 1* 1 6 5 10 0 8 25 10; 1* PE 7

5 4 0,2 10; 1* 1 6 5 10 0 8 28 10; 1* PE 7

Ge p-n-P

100 0,3 3 10 2 1,3 5 10 8 800M 2 PE 7

100 0,3 5,5 10 2 1,3 5 10 PE 7

Si n-p-n

0,4 10; 1* 1 3 5 10 0 2,5 10 10; 1* PE 7

0,4 10; 1* 1 3 5 10 0 2,5 15 10; 1* PE 7

0,4 10; 1* 1 150 5 10* 3 5 10 0 2,5 PE 7

0,4 10; 1* 1 150 5 10" 3 5 10 0 2,5 PE 7

1 4 15 5 10 1,7 5 10 1 3 3,3 60M 10 PE 10a

1 4 15 5 10 1,7 5 10 1 3 PE 10a

G e n-p-n

100 1.5 30 5 5 3 5 30 0,5 5 8 400M 5 P 18

100 1,5 50 5 5 3 5 30 0,5 5 8 400M 5 P 18

100 1,5 30 5 5 3 5 30 0,5 5 P 18

Switching mode

Technology: A - alloy; D - diffusion; AD - alloy-diffusion; C - conversion; P - planar; PE - planar-epitaxial; MP - mesa-planar

31

Tranzistory; Transistors - Digital Library of the Silesian University of Technology

MACTb 4 PART 4

►

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max f i t max

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H M3 K O M A C T O T H bl E L O W F R E Q U E N C Y

MACTb ⁴ PART ⁴

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E le c tric a I param eters ( t Q ^ - 25 ^±- 10 ^{'c )}

flpeije/ibtibie doHHbte Maximum ratings (tomb = t 10 ^{° c)}

P ^{i r}

E le c tr ic a l param eters ( t amb ~ 25 ± 10 ^{°c )}