COflEP>KAHME CONTENTS
C rp . T p a H 3 M C T O p b l M a/IO M MOiqHOCTM HM3KOÈÎ H 3C T 0T bl
KT119A, KT119B... 9
T p a H 3M C T O p b l M ajlO M MOIHHOCTM BblCOKOM HaCTOTbl
KT321A-KT321E... 10
K T 3 3 6 A -K T 3 3 6 r... 12
KT339A, KT339AM ... 14
K T 3 8 4 A M -2 ... 15
K T 3 8 5 A M -2 ... 17
T p a H 3M C T O p b l M a /io ii MOIHHOCTM
CBH K T 3 1 2 3 A M -K T 3 1 2 3 B M ... 18
K T 3 1 2 6 A ... 19
K T 3 1 2 7 A ... 21
K T 3 1 2 8 A ... 22
T p a H 3 M C T o p b i c p e flH e w m o i±(h o c t m B b ic o K o ii n acT O T b i
KT601 A M ... 24
KT602AM, K T 6025M ... 25
KT604AM, K T604BM ... 27
KT611 AM, K T 6115M ... 28
K T 6 4 5 A ... 30
K T 6 4 6 A ... 31
T p a H 3 M C T o p b i c p e f lH e f i m o i h h o c t m
CBH KT607A-4, K T 6 0 7 B - 4 ... 32
I T 6 1 2 A - 4 ... 34
K T 6 2 4 A M ... 36
K T 6 2 5 A M ... 37
T p a H 3 M C T O p b l ÔOJlblUOM MOLLfHOCTM C p e flH e fi HaCTOTbl
K T812A -K T812B ... 38
K T827A -K T827B ... 40
K T834A -K T834B ... 41
K T837A -K T 83 70... 43
K T 8 3 8 A ... 45
K T 8 3 9 A ... 46
KT840A, KT840B... 47
T p a H 3 M C T O p b l ÔOJlbLUOM MOU^HOCTM BblCOKOH HaCTOTbl
KT932A, KT932B... 48
KT933A, KT933B... 49
K T 9 6 9 A ... 50
T
p 3H 3 H C T O p b l ÔO/IbLUOM MOIHHOCTMCBH KT916A, K T 916B ... 52
K T 9 3 8 B - 2 ... 54
KT939A, KT939B ... 55
K T 9 4 2 B ... 57
K T 962A -K T962B ... 58
n o n e B b ie T p a H 3 H C T o p b i Page
L o w -p o w e r lo w -fre q u e n c y tra n s is to rs KT119A.KT119B ... 9
L o w -p o w e r h ig h -fre q u e n c y tra n s is to rs K T 3 2 1 A -K T 3 2 1 E ... 10
KT336A-KT336I"... 12
KT339A, K T 3 3 9 A M ... 14
K T 3 8 4 A M -2 ... 15
K T 3 8 5 A M -2 ... 17
L o w -p o w e r m ic ro w a v e tra n s is to rs K T 3 1 2 3 A M -K T 3 1 2 3 B M ... 18
K T 3 1 2 6 A ... 19
K T 3 1 2 7 A ... 21
K T 3 1 2 8 A ... 22
M e d iu m -p o w e r h ig h -fre q u e n c y tra n s is to rs KT601 A M ... 24
KT602AM, K T 6 0 2 B M ... 25
KT604AM, K T 6 0 4 B M ... 27
KT611AM, K T 6 1 1 B M ... 28
K T 6 4 5 A ... 30
K T 6 4 6 A ... 31
M e d iu m -p o w e r m ic ro w a v e tra n s is to rs KT607A-4, K T 6 0 7 B -4 ... 32
T T 6 1 2 A -4 ... 34
K T 6 2 4 A M ... 36
K T 6 2 5 A M ... 37
H ig h -p o w e r m e d iu m -fre q u e n c y tra n s is to rs K T 8 1 2 A -K T 8 1 2 B ... 38
K T 8 2 7 A -K T 8 2 7 B ... 40
K T 8 3 4 A -K T 8 3 4 B ... 41
KT837A -K T8370 ... 43
K T 8 3 8 A ... 45
K T 8 3 9 A ... 46
KT840A, KT840 B ... 47
H ig h -p o w e r h ig h -fre q u e n c y tra n s is to rs KT932A, K T 9 3 2 B ... 48
KT933A,KT933B ... 49
K T 9 6 9 A ... 50
H ig h -p o w e r m ic ro w a v e tra n s is to rs KT916A, K T 9 1 6 B ... 52
K T 9 3 8 B -2 ... 54
KT939A, K T 9 3 9 B ... 55
K T 9 4 2 B ... 57
K T 9 6 2 A -K T 9 6 2 B ... 58
F ie ld -e ffe c t tra n s is to rs
3 J 1 0 P r
- o f l M H M3 K p y n H e P iiiin x b M H p e n 0 C T a B m n K 0 B M 3 fle n n ii 3 Jie K T p 0 H H 0 M npOM blLU/ieHHOCTH. V \3 f\e n v \9 \ COBeTCKOii S J ie K T p o -h m kh , o6naflaK)LJHMe
B b ic o K o ti Ha,qe>KH0CTbK),n o n b 3 y K )T c a 3 a c n y -
>KeHHbiM y c n e x o M H a m h p o b o m p b iH K e.
K a T a n o r 3HaKOMM T c T p a H 3 n c T o p a M w , n p e fln a r a e iv ib iM n H a s k c- n o p T B c e c o K )3 H b iM oô-beflU H eH M eivi
O i l O P r .
B K a T a n o r e n p u B e fle H b i o b u ^n e C B e fle H u n , n e p T e w n c ra ô a p H T H b iM H m n p u c o e flU H m e n b H b iM H p a 3 M e p a M M , 0 C H 0 B H b ie T e x H u n e c K n e /ja H H b ie m y c n o B H a S K c n n y a - Tai^HM TpaH 3H C TO pO B .B c n e flC T B u e H e n p e p b iB H o ro c 0 B e p w e H C T B 0 B a H H fl a n e K T p o H - hom TexH M Kn n a p a M e T p b i p f lf la
\A3f\er\wv\M o ry T O T jin H a T b C fi b n y H - n iyK ) C T o p o H y o t n p u B e fle H H b ix b « a T a n o r e .
n o B c e M B o n p o c a M c n e ^ y e T o ô p a m a T b C f l n o a ^ p e c y : C C C P ,
121200,
M o c K B a , C M O J ie H C K a f l- C e H H a ann., 32/34, 3
/1 0
P T T e n e rp a c fD H b iti a ^ p e c :3
/1 0
P r M o c K B aT en ecjD O H :
205-00-33
T e n e K c :
411385,411386
ELORG is one of the w orld’s largest suppliers of items of the elec
tronic industry. Items of Soviet electronics featuring a high reliability are well known in the world market.
This Catalogue contains information on transistors offered for export by the Vsesojuznoje Objedinenije ELORG. The Catalogue gi
ves general data, drawings with overall and connection dimensions, basic technical characteristics and operating conditions of transistors.
Because of continuous perfection of electronic products, the pa
rameters of a number of items may be better than those given in the Catalogue.
Please, address all inquiries to: ELORG, 32/34, Smolenskaya- Sennaya Sq., 121200, Moscow, USSR
Cable: ELORG Moscow
Telephone: 205-00-33
Telex: 411385, 411386
nOflCHEHMfl K KATAJlOry
TpaH3MCTopbi b Ka>KflOM p a 3 ,q e n e pacnono>KeH bi b ancf>aBMTHOM n o p n flK e m b n o p a flx e B 03pacTaH na qncfcp, cocTaBnnKDLi^nx y cn o B H o e o 6 o 3 H a n e H n e n p n - 6o p o b .
y c n o B H o e o 6 o 3 H a H e H n e TpaH3H CTopoB:
npmviep KT321A
rie p B b m a n e M e H T o 6 o 3 H a n a e T ncxoflHbiM n o n y n p o - BOflHMKOBblM M aT ep n a/1, M3 KOTOpOrO M3rOTOBJieH n p n -
6op:
r - repMaHMM
hjimcoeflMHeHun repMaHun;
K
- KpeMHMM n n n c o e fln n e H M fl KpewiHMa.BTopout s n e M e H T o n p e fle n n e T n o A K n a c c n p n 6 o p a : T - TpaH3MCTopbi (3 a MCKfiHDHeHneM n o n eB b ix TpaH - 3H C T0P0B );
(1 — TpaH3MCTopbi n o n e B b ie .
TpeTnPi aneiw eH T o n p e fle n n e T H a3H aneH M e npw- 6 o p a .
TpaH3MCTOpbl (3 a MCKJlKDMeHHeM nOneBbIX TpaH3HC- TOpOB)
TpaH3ncTopbi
M a n o ii molhhoctm(P
cm a x .^ 0,3 W ):
1 -
HM3KOMHaCTOTbl ( f j ^ 3 MHz)
2 - cpeflHew nacTOTbi (3 MHz <
f j30 MHz) 3
- BblCOKOM HaCTOTbl(fT > 30 MHz)
TpaH3MCTopbi cpeflHePi
m o ih h o c tu(0,3 W < Pc max. < 1,5 W ):
4 - HM3KOM HaCTOTbl
(fT > 30 MHz)
5 - cpeflHew nacTOTbi (3 MHz < f T sS 30 MHz)
6 - BblCOKOM HaCTOTbl(fT > 30 MHz)
T p a H3MCTopbi 6o n b iu o ii m oihhoctm
(P cm ax. > 1,5 W ):
7 - HM3KOM HaCTOTbl
(fT ^ 3 MHz)
8 - cpeflHefi nacTOTbi (3 MHz < fT =S 30 MHz)
9 - BblCOKOM HaCTOTbl(fT > 30 MHz)
MeTBepTbiii n nflTbiii aneivieHTbi onpeflenaioT no- pnflKOBbiii HOMep pa3pa6oTKH TexHonornnecKoro Tuna npn6opa
mo6o3HaHaioTCH
ot1 flo 99.
llle c T o ii anew ieH T o n p e f le n a e T fle n e H n e T e x H o n o - rH H ecK oro T u n a Ha napaMeTpHHecKMe rp y n n b i w 060- 3H anaeTCfl 6yKBawin p y c cK o ro ancjDaBMTa.
EXPLANATIONS TO CATALOGUE
Transistors in each section are arranged in alphabe
tical order and in the increasing order of the figures m a
king up the designation of the devices.
Designation of transistors:
For example, KT321A
The first elem ent stands for the source sem iconduc
tor material the device is made of:
T - germanium or germanium com pounds;
K - silicon or silicon compounds.
The second elem ent determines the subclass of the device :
T - transistors (except for field-effect transistors) ;
n- field-effect transistors.
The third element shows the application device.
Transistors (except for field-effect transistors) Low-power transistors
( P qmax =£ 0.3 W) : 1 - low frequency
( f j « 3 MHz)
2 - medium frequency (3 MHz < fT « 30 MHz) 3 - high frequency ( f j > 30 MHz)
M edium -power transistors (0.3 W <
P qmax. ^ 1-5 W ):
4 - low frequency ( f j > 30 MHz)
5 - medium frequency (3 MHz < fT s= 30 MHz) 6 - high frequency (fT > 30 MHz)
High-power transistors (^C max. > 1 -5 W ):
7 - low frequency (fT =s3M H z)
8 - medium frequency (3 MHz < fT « 30 MHz) 9 - high frequency (fT > 30 MHz)
The fourth and fifth elements determine the serial number of the device technological type and are desig
nated from 1 to 99.
The sixth element defines the classification of the technological type into parametric groups and is desig
nated with the letters of the Russian alphabet.
F1POHME CBEflEHHfl
B KaTa/iore npeflCTaBneHbi rpacfcuKM 3aBncnMoc- Teii 0CH0BHbix napaMeTpoB. rpac^MKn 3aBncnMocTePi HB/iiiKiTCfl TunoBbiMH
mnonyneHbi Ha ocHoeaHMn CTa- TUCTUHeCKMX flaHHblX.
Ha raôapuTHbix HepTewax aneKTpOflbi
o 6 o 3 H a n e -Hbl ÔyKBaMM.
TpâH3ncTopbi (3a MCKHioneHneM noneBbix
T p a H -3HCTOPOB):
E -SMUTTep, C - KonneKTop, B - 6a3a, case - Kopnyc
OTHER DATA
The Catalogue includes graphs showing the rela
tions between the basic parameters. The graphs are standard, they are obtained on the basis of statistical data.
The electrodes on the outline drawings are designa
ted with the following letters.
Transistors (except for field-effect transistors) : E - emitter,
C - collector,
B - base,
D -c t o k,
G
- 3aTBOp,B -
n o fln o > K K ayCTO I/IHM BOCTb K B H e iilH M M B 0 3 fle Ü C T B M flM (eCHM H e y K a 3 a H 0 o c o ô o ) :
B M ô p a n n fl b f ln a n a 3 0 H e n a c T O T o t 1 0 f l o 6 0 0 H z c y c K o p e H M e M f l o 1 0 g ,
M H o r o K p a m b ie y f la p b i c y c K o p e H M e M f l o 7 5 g , n n H e ü H b ie H a r p y 3 K w c y c K o p e H M e M f l o 2 5 g ,
O T H o c n T e n b H a n B n a > K H o c T b B 0 3 f ly x a f l o 9 8 % n p w T e M n e p a T y p e f l o 4 0 ° C ,
fla B n e H M e o x p y jK a io L f le i/ i c p e f lb i o t 2 , 7 • 1 0 4 f l o 3 ■ 1 0 5 H /m 2.
3neKTpnHecKne napaMeTpbi TpaH3MCTopoB npuBO- flflTcn npn TeMnepaType 0Kpy>Kaf0i±(ei/i cpeflbi ta m b =
( 2 5 ± 1 0 )
0
C cyxa3aHneM pe>KHMOB, b KOTopbix npo- M3BOflMnHCb H3MepeHMfl.
H a rp a c)D H K ax n p w H H T b i c n e f l y i o i f l n e o 6 o 3 H a H e H M H : ______________ T u n o B b ie x a p a K T e p u c T M K M ,
_____________ rp a H H i4bi 9 5 % - r o p a 3 6 p o c a .
D - drain, G - gate, B - substrate
Resistance to external effect (unless specified other
wise) :
vibration within the frequency range of 10 to 600 Hz at an acceleration up to 10 g ;
multiple impacts at an acceleration up to 75 g ; linear acceleration up to 25 g ;
relative air hum idity up to 98 % at a tem perature of 40 0 C;
surrounding medium pressure from 2.7 • 104 to 3 ■ 105 N /m 2.
The transistor electrical parameters have been m ea
sured at ambient tem perature tam b = (25 ± 1 0 )0 C, and the operating conditions in which m easurem ents have been taken are specified.
The following designations are used on the graphs:
___________standard characteristics, __________ limits of a 95 % spread.
Y K A 3 A H H H 110 n P H M E H E H W O H S K C n jiy A T A L J H M H e p a 3 p e w a e T C fl n c n 0 /ib 3 0 B a T b TpaH3MCTopbi b coB M eifleH H bix M aK cnM anbH O flonycTm vibix pejKm viax;
p a c n o /ia r a T b
mx
b6/im 3H H a rp e B a to ifln x c H sneivieHTOB c x e M b i; n p e B b iiiia T b M aK cnM anbH O flon ycTw vib ie 3H a- Hem/m TOKa, H a n p n jK eH n a, m o ia h o c tu , T e M n e p a T y p b i ; BKJIIOMaTb Tp3H3H CT0pbl B CXeMy l/l BblKflKDHaTb npn noflK nioM eH H bixm cto h h u io x
n m a n v in .npw s K c n n y a T a u n n T p a H 3n cT o p o B b y c n o s n a x M e-
XaHMHeCKMX B03flePiCTBHM MX
HeOÔXOflHMOKpenMTb 3a
K opnyc.flrm
n o B b im e H u n Ha,qe>KHOc™ p e K O M e H fly e T c ahc-
n o n b 3 0 B a T b T p a H 3 n c T o p b i b pe>KMMax HM>Ke n p e f le n b -ho
flo n y c T M M b ix Ha20...30
% .H e peK O M eH flyeTC fl 3 K c n n y a T n p o B a T b T p a H 3 n c - Topbi npH p a ô o H n x TOKax, coM 3M epnM bix
c
H e y n p a B /in - eMbiMM oôpaTHbiM H TOKaMM bo BceM flM a n a 3 0 H e Tewi- n e p a T y p .r ip n p a ô o T e b y c /io B M a x n 3 M e H e H n a T e iv in e p a T y p b i 0K p y> K ai0 ii(e M c p e f lb i p e K O M e H fly e T c n n p e fly c M a T p n - BaTb T e M n e p a T y p H y io C T a 6 n n i/i3 a q m o b c x e M a x .
r ip n n 3 r n ô e BbiBOflOB flon >K H bi 6 b iT b n p u H H T b i M e p b i npefl0C T0p0>K H 0C TM , oôecneM M B aiounM e H e n o flB n > K - HOCTb B b iB O fla M e>K fly M ecT O M
M3rn6a n
K o p n y c o Mu wc-
KJnoHatouuM e H a p y iu e H n e re p M e T M H H o c T u K o p n y c a . K a T e ro p u n e c K M 3 a n p e m a e T c a K p y n e H n e BbiBOflOB BOKpyr ocm.
n p H BKniOHeHUM T p3H 3H C T 0 p0 B B SJieKTpHHeCKyfO q e n b , H a x o flflL q y io c H n o f l H a npn> K eH neM , K o n n e K T o p - HblPi B blB O fl flO n>KeH nO flK /llO H a T b C fl n o e n e flH H M M OT- K n io H a T b c a n e p B b iM .
ilp n n a ü K e BbiBOflOB flon>KHa 6biTb M CKm oneHa B03M0>KH0CTb npOTeKaHMfl TOKa H e p e 3 TpaH3MCTOp n o ô e cn eM e H Hafle>KHbm o t b o a T e rm a o t M e c T a nai/iKu k K o p nycy. H e 0 6 x 0 AHM0 3aiflM iflaTb K o p n y cT p a H 3H C T o p a o t n o n a A a H u n cjinio ca.
OPERATING INSTRUCTIONS
Never use the transistors under combined maximum allowable conditions; do not position them near heating circuit com ponents; maximum allowable values prevent the excess of m aximum allowable values of current, vol
tage, power, tem perature ; do not connect the transistors in the circuit or switch them off with the power sources connected.
W hen the transistors are employed under the con
ditions of mechanical effects, be sure to secure them by the case.
To improve the reliability of transistors, it is recom mended to use them under operating conditions 2 0 - 3 0 % lower than the maximum allowable ones.
It is not recommended to employ the transistors if the operating currents are com m ensurable with non
controlled feedback currents within the entire tem pera
ture range.
W hen operating under conditions of am bient tem perature variations, it is recommended to provide tem perature stabilization in the circuits.
W hen bending the leads, take precautions to fix the lead between the point of bending and the case so as to avoid deterioration of the case sealing.
NEVER twist the leads around the axis.
W hen connecting the transistors in an energized electric circuit, see that the collector lead is last connec
ted and first disconnected.
W hen soldering the leads, avoid leakage of current through the transistor and provide reliable heat sinking from the soldering point to the case. Protect the transis
tor case from flux.
yCJIOBMFI XPAHEHHfl
TpaH3HCTopbi Aon>KHbi xpaHHTbcn Ha CKnafle
b h h-TepBane TeMnepaTyp
o t5 ao 85° C, npu oTHocnTe/ib- hom B/ia>KHocTM B03Ayxa He 6onee 85
%n npH OTeyTeT-
b h h b
B03Ayxe arpeccwBHbix npnMeceii.
STORAGE CONDITIONS
The transistors should be kept in storehouses at tem peratures ranging from 5 to 85° C and relative air hum idity not exceeding 85 % in the absence of aggres
sive substances in the air.
EMKocTb K onn e K T o p H o ro n e p e x o fla EMKOCTb SMMTTepHoro n e p e x o fla B x o fln a n eMKOCTb n o n e s o r o TpaH3MCTopa n p o x o flH a fl eMKOCTb n o n e s o ro TpaH 3ncTopa B b ix o fln a n eMKOCTb n o n e B o ro T paH 3ncT opa HacTOTa
M3MepeHna
MaKCMManbHo flonycTMMan HacTOTa
rpaHMHHan <-iacTOTa Kosctxfum neH Ta nepeflaH M TOKa B CXeMe C 06u(MM SMMTTepOM
KoacjDcpnmieHT myMa
Kosc}xfin4MeHT ycnneHMn no
moihhoctmKpyTM3Ha xapaKTepMCTMKM n o /ie B o ro TpaH3MCTopa M o fly n b K03c})ct)M4MeHTa nepeflaMM TOKa
Ha B bicoK oii nacTOTe
C T a T M H e c K M fi K O 3 0 c p M 4 n e H T n e p e fla M M
TOKa bcxeMe c oôiflMM sMMrrepOM b pe>KMMe 6 o /ib iiio r o CM m ana
Ko3c(DcfiM4MeHT nepeflaM w TOKa b cxeM e c o ô iH M M 3 M M T T e p o M b pe>KMMe M a n o r o C M m a n a
0E03HAHEHME riAPAMETPOB PARAMETER SYMBOLS
Co Ce C11s
C ^ s s C 22 S
f f,
•max.u
G p gm
^21e|
^ 2 1 E
^21e
Collector capacitance Emitter capacitance Input capacitance (FETs) Transfer capacitance (FETs) Output capacitance (FETs) Measuring frequency Maximum frequency
Transition frequency, common-emitter configuration
Noise figure
Power gain
Forward transconductance Modulus of current gain at high frequencies
Static value c forward current transfer ratio -.ommon-emitter configuration
Small-signal value of forward current transfer ratio, common-emitter configuration
riO C TO H H H blM TO K S M M T T e p a M aKcnManbHO flon ycT M M biii t o k
KonneKTopa, nocTOHHHbiii m MMnynbCHbiii COOTBeTCTBeHHO
MaKCMManbHo flonycTM M biii t o k
6a3bl, HOCTOHHHblM M MMHynbCHblM COOTBeTCTBeHHO
O ôpaTH bifi t o k K o n n e K T o p a O ôp aT H b iii t o k sMMTTepa
0 6 p a T H b i i i t o k K o n n e K T o p - S M H T T e p ( n p n 3 a f l3 H H 0 M
Rgf=
RBE = 0
mR
bE = CO COOTBeTCTBeHHO)
To k BKJIIOHeHKH To k BblWUOMeHMfl
C p e flH H ii TOK SMUTTepa B OTKpblTOM C0CT03HMM flon ycT M M biii nOCTOHHHblii TOK CT0K3
H a n a /ib H b ifi t o kc t o k b OCTaTOMHbIM TOK CT0K3
C max., CM max.
B max., BM max.
IcBO
Ie b oIcER, icES>
Ic e o
■on I off EF (av)
I I °
DSS 'DSXDC emitter current Maximum collector current, DC and pulse,
respectively
Maximum base current, DC and pulse, respectively
Collector back current Emitter back current
Collector-emitter, back current (specified Rgg,
R g g = 0 and R g g = respectively) On current
Off current
Emitter average current (turned-on) DC drain current
Drain current at zero gate voltage Residual drain current
MaKCMManbHo flonycTMMas paccensaeMasi
M o tn H o c T b K o n n e K T o p a , n o c T o s w H a n M HMnynbCHafl COOTBeTCTBeHHO B x o flH a a MoinHocTb ô n n o n a p H o ro TpaH3ncTopa
B b ixo flH a n MotflHOCTb ô n n o n o p H o ro TpaH3MCTOpa
BblXOflHan MOlflHOCTb TpaH3MCTOpa (cpeflnee 3HaseHne)
MaKCMManbHo flonycTMMaa nocraaHHan
p a c c e M B a e M a n M o if lH o c T b n o n e B o r o T p a H 3 M C T o p a
MaKCMManbHo flonycTMMaa nocTOHHHaa
C max.>
RM max.
Pin P out
^out (av)
>
DS max.
□ [ d
max.Maximum collector power dissipation, DC and pulse, respectively
Input power Output power
Average output power
Maximum DC power dissipation
(FETs)
Maximum DC power
CKBcDKHOCTb
Tennosoe conpoTMBneHne TpaH3MCTopa nepexofl-oKpyjKaromas cpefla
m nepexofl-Kopnyc cooTBeTCTBSHHo BHeujHee conpoTMBneHMe Me>Kfly 6a3oii M SMMTTepOM
Me>i<6a30Boe conpOTMBneHne
Q
Duty cycleRthja.
Rthjc
R
BER B2B1
Thermal resistance, junctlon-to-amblent
and junction-to-case, respectively Extrinsic base-emitter
resistance
Interbase resistance
flonycTMMan TeMnepaTypa OKpyjKatomeii cpeflbi
MaKCMManbHo flonycTM M aa TeM ne paT ypa TeMnepaTypa Kopnyca
TeMnepaTypa noflno>KKM BpeMfi paccacbieaHMH f l n n T e n b H O C T b n M n y n b c a
BpeMfl BKntoneHUH BpeMfi BblKniOHeHMSl BpeMfi HacbiifleHHn
l amb
t j max.
f
tsu bt
t,t
to ff
^sat
cases P on
Ambient temperature
Maximum junction temperature Case temperature
Substrate temperature Carrier storage time Pulse width Turn-on time Turn-off time Saturation time
nocTonHHan BpeMeHM i^enn oöpaTHoü CBH3M Ha BblCOKOI* MaCTOTe
Collector-base time constant at high frequencies
("locTOflHHoe H a n p n > K e H n e K o n n e K T o p a MaKCMManbHo flonycTM M oe nocTOfiHHoe H a n p f D K e H M e K o n n e K T o p - 6 a 3 a MaKCMManbHo flonycTM M oe nocTonHH oe H a n p a > K e H M e K o n n e K T O p - S M M T T e p n o c T o ^ H H o e H a n p a > K e H M e S M M r r e p a MaKCMManbHo flonycTM M oe nocTOfiHHoe H a n p n > K e H M e 3 M M T T e p - 6 a 3 a
M e > « 6 a 3 0 B 0 e H a n p f i w e H M e MaKCMManbHo flonycTM M oe
Me>K6a30B0e nanpfweHMe
MaKCMManbHo flonycTM M oe H anpsw eHM e Me>Kfly S M M i r e p o M m 6 a 3 0 ü 2
b 3an0pH0M Hanpn>KeHnn
Hanpji>KeHMe HacbimeHMf) S M M r r e p
Hanpn)«eH M e HacbiifleHMa K o n n e K T o p -s M M ire p
HanpnKeHMe HacwifleHMn 6a3a-3MMTTep
f l o c T o a H H o e H a n p a w e H M e K o n n e K T o p -
SMMTTep npM 3aflaHH0M Rgg
fp a H M H H o e H a n p a > K e H M e ( n p n lg = 0 m 3 a f l a H H 0 M Ig)
M a K C M M a n b H o f lo n y c T M M o e H a n p a w e H M e 3M M T T e p -6a3a (n p M I q = 0)
MaKCMManbHo flonycTMMoe HanpaweHMe
KonneKTop-6a3a (npM lg = 0)M a K C M M a n b H o f lo n y c T M M o e H a n p n > K e H M e c t o k-m c t o k M a K C M M a n b H o f lo n y c T M M o e H a n p s w e H M e
3 a T B O p -C T O K
M a K C M M a n b H o f lo n y c T M M o e H a n p jw e H M e
33TB0P'MCT0K
Knfl
u u u
u f
CB max.
CE max.
U E
EB max.u u
B2B1
B2 B^max.u
EB2max.u u
CE sat EsatU BE sat
u,
'CERU L
(CEO)u u
EBO max.
CBO max.
u u u
DS max.
GD max.
GS max.
Tic
DC collector voltage Maximum collector-base voltage, DC
Maximum collector-emitter voltage, DC
DC emitter voltage Maximum emitter-base voltage, DC
Interbase voltage Maximum interbase voltage
Maximum reverse emitter-base 2 voltage
Emitter saturation voltage
Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter voltage, DC (specified Rb e) Limiting collector-emitter voltage (Iq = 0, specified lg) Maximum emitter-base voltage (Iq = 0) Maximum collector-base voltage (l|= = 0)
Maximum drain-source voltage Maximum gate-drain
voltage
Maximum gate-source voltage
Collector efficiency
I ririaHapHO - anw aK C M an bH afl
„ E P --- ---
I P l a n a r - e p i t a x i a l |
M e 3 a n / ia H a p H a f l
M P
M e 3 a n n a H a p H O - a n m a K c w a / i b H a ^
M P E m I
J In c p ( |) y 3 n o H H O - 3 n n T a K C n a n b H a q
E D 1
M e s a - p l a n a r
M e s a - p la n a r - e p it a x ia l
Di f f us i o n - e p i t a x i a l
3
m h t t e pE m it t e r H E
5 a 3 a
B a s e K B
I K o jin e tv r o p
1 c o l l e c t o r
K c
e \ l H
c t o k* ) \ Source
d ) | D rain C
t o kg ) i
3aTBop
Gate
T P A H 3 M C T 0 P b l MAJ10M M OU1HOCTM H M 3K O M H A C T O T b l
L O W -P O W E R L O W -F R E Q U E N C Y T R A N S IS T O R S KT119A, KT1195
OflHonepexoflHbie
TpaH3MCTopbiKT119A, KT1195
n p e ,q H a 3 H a H e H b i f l n a paôOTbi b c x e M a x re H e p u p o B a H M fi m
pa3nnHHoro
B M fla p e n a K c a i^ M O H H b ix c x e M a xpafluo-
a n e K T p o H H o ti a n n a p a T y p b i b c o c T a B e rn ô p v iflH b ix n n e - HOHHblX M M K p o e x e M , M M K p O M O flyjIb H b lX y3J10B H ÔnOKOB.
Si-n-P
The KT119A, KT1195 transistors are unijunction transistors designed for use in oscillator applications and in relaxation circuits of radio electronic equipment of hybrid film microcircuits, m icromodule assemblies and subassemblies.
MAKCHMAJlbHO flO riYC TM M blE flA H H b lE t am b = - 4 5 ...+ 8 5 0 C MAXIMUM RATINGS
'-^E^max., V ... 20
uEB2 max.1 v ... 20
lEF(av),rnA ... 10
lE F M m ax.(lF ( a v ) ^ 1 0 m A ;tP ^ 1 0 !lS)>m A ... 50
F’d max.Oamb S 35° C), mW : C TenjIOOTBOflOM h e a t s i n k ... 60
6e3 Tenn00TB0fla free a i r ... 25
3J1EKTPHHECKME HAPAMETPbl ELECTRICAL PARAMETERS
riapaMeipbi Parameters
KT119A KT119E Pe>KHMbl
Conditions
!e b2o- u a <1 =S1 UEB2max. = 2 ° V
Ion. uA 0 ,5 -5 0 ,5 -5 u B2 B l = i o v
l0ff, mA 1 - 6 1 - 6 Ub2B i = i o v
fmax.i kHz 5=200 S200 Ub2 Bi =i o v
U E s a fV «2,5 =52,5 Ub2 Bi = i°v
,e b1 = 1 ° mA
'ic 0 ,5 -0 ,6 5 0 ,6 -0 ,7 5 Ub2Bi = 1 0 V
RB2B1- a 4 - 1 2 4 - 1 2 UB2B i = 1
v
I on. /¿A
5
—
- - U ia fio vN
*«•
-5 0 - 2 5 0 * 2 5 + 50 + 7 5 t a m i°C
-5 0 -2 5 0 + 2 5 + 5 0 + 7 5 t amÈ,°C
«Csat. V
— - —’
0 10 2 0 JO ‘lO iB m a x i/^ A
Uesat y
3
i i i/s,8,= 10V
— i r - 10mA
fmax i k H z 600 500
m m
200
\ , UsfWV
\ 'o'
S -
- 5 0 - 2 5 0 * 2 5 + 50 +75 t am6.°C -50 -25 0 +25 +50 +75 tams;C
K T 1 1 9 A , K T 1 1 9 B
He
0.8 0,7
0,6
0.5 OM 0,3
KT113A
1 1
%»,--iov
I
\l
1
1
1" " \T
■ 5 0 - 2 5 0 + 2 5 + 5 0 + 1 5 t amS,°C
KT1195
0.01 nc
0.8 0,1
0.5 0,5 OH
/ / / I / 1 #
J m s m
-
—
- 5 0 - 2 5 0 +25 + 5 0 * 1 5 t amS,°C
Rg ^¡.k S l
10 Us,B2 ^
' **
•*-
- 5 0 - 2 5 0 + 2 5 + 5 0 + 7 5 t amS;C
TPAH3MCT0Pbl MAJIOM MOLLJHOCTM BblCOKOM HACTOTbl LOW-POWER HIGH-FREQUENCY TRANSISTORS
T
paH 3M C TopbiKT321A-KT321E
n p e flH a 3 H a H e H b i f l n n p a 6 o T b i b B bicoKO M acTO TH bix n M M riynbC H bix p a - flM O TexHM HecKHx c x e M a x a n n a p a T y p b i w u p o K o r o n p n -MeHeHMH.
Si-p-n-p-EP
The KT321A-KT321E transistors are designed for use in high-frequency and pulse circuits of radio equip
ment in a wide range of applications.
MAKCMMA/lbHO flO iiyCTM M blE flAHHblE tamb = -60...+125° C MAXIMUM RATINGS
UCB max.’ V:
K T 3 2 1 A -B ... 60
K T 3 2 1 T -E ... 45
UCE max.’ K T 3 2 1 A -B ... 50
K T 3 2 1 T -E ... 40
^EBm ax.’ V ... 4
lC m ax.’ m A ... 200
'CM max. (*P^ 30 jts ; Q > 100; t a m b « 4 5 ° C ) ,A ... 2
lBmax..rr' A ... 30
'BMmax(tp«30tts,Q>100),A
... 0,5pCmax(tamb«+45°C)*,mW... 210
t im a x .,° C ... 150
08
E/
C'
08,J 0//,7mox
017,5
*npi/i
At Wnb ' 45° C — Pq ,■ 150 tamt) 0.5
3/1EKTPMHECKME flAPAMETPbl ELECTRICAL PARAMETERS
napaMeTpbi Parameters
KT321 Pe>KMMbl
Conditions
A B B r A E
•C B O mA €0,1 €0,1 €0,1
€0,1 €0,1 €0,1
UCB = 60 V UCB = 4 5 V
‘CER’ mA €0,2 €0,2 €0,2
€0,2 €0,2 €0,2
UCE = 50 V UC£ = 40 V
KT321A-KT321E
riapaMeTpbi Parameters
KT321 Pe>KMMbl
Conditions
A B B r A E
h21E 2 0 -6 0 4 0 -1 2 0 8 0 -2 0 0 2 0 -6 0 4 0 -1 2 0 8 0 -2 0 0 Uc e = 3 V
lc = 0,5 A
I h21e I
5=3 5=3 5=3 5=3 5=3 5=3
UCB = 1 0 V lE = 15 mA f = 20 MHz
U(BR) EB O -v 5=4 5=4 5=4 5=4 5=4 5=4 lEgQ = 0,5 mA
te, ps «400 «400
1E = 15 mA UCB = 10 V
UCE sat- v
«2 ,5
«2,5
« 2 ,5
«2 ,5
«2 ,5
« 2 ,5
Ig = 140 mA
IR = 70 mA l C “
B f 0.7A
lB = 35 mA
J
u B E s at’ v
«1 ,3
«1,3
«1 ,3
«1 ,3
«1,3
«1,3
lg = 140 mA !
' S " ™1B = 35 mA
m4 J 1
0 °7 ¡U(L) CEO’ V 5=45 5=35 ÍE =0.7 A
IB,mA le, mA
80
un /
■ / -
t
—
..HU —
. .. . ¿ y
O 20 W BO 80 WUcß.V -HO O +W +60 +120tm ß,eC
KT321A-KT321E
ISO 150 no
120 100
80
B O
*10
20
"21
f/ \
•3V — /
/ \ UCB
s \
\
/ \ \
\
\ \
\ \
\
/ S
N."S.
\ •<S.
---- — — 0 0,2 0.1 0,6 0,8 1.0 1.2 I c, A
KT336A-KT336r TPAH3MCT0Pbl MAJlOil
M O U L | H O C T HBblCOKOM HACTOTbl LOW-POWER HIGH-FREQUENCY TRANSISTORS
T p a H 3 n c T o p b i K T 3 3 6 A - K T 3 3 6 r n p e flH a s H a n e H b i p a6o T b i b a n n a p a T y p e m n p o K o ro n p n M eH eH n a.
Si-n-p-n-EP
The K T336A -K T336r transistors are designed for use in wide range of applications.
MAKCMMAJlbHO flOnyCTMMblE flAHHblE tamb = -6 0 ...+ 8 5 0 C MAXIMUM RATINGS
'Cmax.’ ™ ^ ... 20
u C B O m ax.'V ... 10
u CEm ax.(RB E s s 3 k n ) ' V ... 10
u EBOmax.’ V ... 4
RC max. (tam b:®'’50C),mW 50
tjm a x ..° C ... 105
3J1EKTPMHECKME flAPAMETPbl ELECTRICAL PARAMETERS
riapaMeTpbi P aram eters
KT336 Pe>KHMbl
Conditions
A B B r A E
!CBO’ ilA « 0 ,5 «0 ,5 « 0 ,5 u c = 10 V
■ebo- i,a «1 «1 «1 c m II <
h21E 2 0 -6 0 4 0 -1 2 0 5=80 2 0 -6 0 4 0 -1 2 0 S80 Uc = 1 v
lc = 10 mA
| h2 1 e | ^ 2 ,5 2=2,5 5=2,5 5=4,5 2=4,5 5=4,5 UC = 2 V
lE = 5 mA f = 108 Hz
UCE s a t’ V «0 ,3 «0 ,3 « 0 ,3 UC = 1 V
Iq = 10 mA
u B E s a t ’ v «0 ,9 «0 ,9 « 0 ,9
Cc ,pF « 5 « 5 « 5 « 5 « 5 « 5 Uc = 5 V
f = 107 Hz
KT336A-KT336r
riapaMeTpbi Parameters
KT336 Pe>KMMbl
Conditions
A 5 B r f l E
Ce. pF « 4 « 4 « 4 « 4 « 4 « 4 UE = 0
f = 107 Hz
ts. ns « 3 0 « 3 0 « 5 0 « 1 5 « 1 5 « 1 5 Iq = 10 mA
Iq = 1 mA
Ihgel 1CBO
"2/f h'! t E (20°C)
Vbesoi'II'beshM 'C )
U ce sat
-60-40 -20 O *20 +10 +50 +BOtamS°C
uceR ira
io
03
0,8
OJOß,Ut 1.0 10
R,kS?
KT339A, KT339AM T P A H 3 M C T 0 P b l M A JlO fi MOUÜIHOCTH BblCOKOPi H A C TO Tbl L O W -P O W E R H IG H -F R E Q U E N C Y T R A N S IS T O R S
TpaH3MCTopbi KT339A, KT339AM npeflHasHaneHbi ,qn« pa6oTbi b BbixoflHbix Kacxaflax
Y riHTe/ieBW3opoB m flp yru x ycTpowcTB ujnpoKoro npnMeHeHnn.
Si-n-p-n-EP
The KT339A, KT339AM transistors are designed for use in the output stages of IF amplifiers of TV sets and other circuits in a wide range of applications.
M A K CHM A nbHO flO nyCTM M blEflAH HblEtam b = -6 0 ...+ 1 2 5 ° C MAXIMUM RATINGS
UCB m ax.'v
^CEm ax.’ V
^E B m ax.'V
^Cmax.'
40 25 4 25
175
^Cmax. 0 a m b ^ 3 5 ° C ),m W ... 260
t jm a x . . ° C ...
3J1EKTPHMECKME nAPAMETPbl ELECTRICAL PARAMETERS
flapaMeTpfai Parameters
KT339A, KT339AM Pe>KMMbl Conditions
1 2 3
u CBO’ v 2*40 lc = 1 |.A
UEBO> v 2=4 lE = 1 uA
h21E 2=25 UCB = 10 V
lE = 7 mA
Gp,dB 2=24 UCE = 16,6 V
lc = 7,2 mA f = 35 MHz
| h21e | 2=3
u CB = i o v lE = 5 mA f = 100 MHz
1 2 3
TC, P S « 2 5
UCB = 1 0 V lE = 7 m A
f = 5 MHz
Cc, pF
« 2 UCB = 5 V
f = 10 MHz
l cM Ic.mA
KT339A, KT339AM
th2lel
2 1 6 8 10 12 11 16 WIc.mA
"1?,e'
11
10
\ 0 \
\
\ \
\ \ A
\ \
\ \
\
\
S.
V .
V
a 20
ioso
so f.rn z15 20 I E,mA
TPAH3MCT0Pbl MAJ10M MOUJHOCTM BblCOKOM HACTOTbl
LOW-POWER HIGH-FREQUENCY TRANSISTORS KT384AM-2
T paH 3M C T o pbi
KT384AM-2
n p e flH a 3 H a H e H b i f ln n n c n 0 /ib 3 0 B a H M H b H e p e M O H T n p y e M b ix rM 6 p n flH b ix c x e - M ax, M M K p o M O fly n a x , y 3 J ia x m 6 /io K a x , n M e to m n x r e p - MeTMHHyto 3a Lq nT y o t fle w c T B u ii c o n H e s H o r o CBeTa, B n a rn , c o r m H o r o T yiviaH a, n n e c H e B b ix rp n 6 K O B , n o B b i- LueHHoro m noHM>KeHHoro aTMOCCfcepHoro fla B /ie H H n , n c n o n b 3 y e M b ix b y c r p o iiC T B a x u u n p o K o ro n p n M e H e H n n .Si-n-p-n-EP
The KT384AM-2 transistors are designed for use in non-repairable hybrid circuits, m icromodules, assem blies and subassem blies which are herm etically protec
ted against the effects of sunlight, humidity, salt spray, mould fungi, high and low atm ospheric pressure. The devices are intended for use in a wide range of applica
tions.
J/77QA Imax
; k
’ X
i l l I J
r " i
i ---- ID c
WOE
! I
8 E
1
M A K C H M A /lb H O f lO n y C T M M b lE f lA H H b lE te a s e = -4 5 ...+ 8 5 ° C M A X IM U M R A T IN G S
'Cmax.’ A ... °>3
!CM max. (lP 55 5 ^lS; Q 5510) , A ... 0,5 u CBmax. >v ... 30 u E B m ax.-v ... 4
KT384AM-2
u C E m a x.(RBE = 5 k n ) ' V max. ('case s 70° C), W Pcmax. (te a s e - 85°C), W t j m a x . . ° C ...
3/1EKTPMHECKME HAPAMETPbl ELECTRICAL PARAMETERS
30 0,3 0,2
120
napaMeTpbi KT384AM-2 Pe>KMMbl
Parameters Conditions
1 2 3
■CBO> tlA « 1 0 UCB = 30 V
■e b o > J*A « 1 0 UE B = 4 V
1 2 3
h21E
3 0 -1 8 0 u CE =
1
vlc = 150 mA
UCE sat’ v
« 0,6 Ig = 15 mA
lc = 150 mA
| h21e | «4 ,5
UCE = 10 V Iq = 100 mA f = 10s Hz
ts, ns « 1 5
IB1 = 'B j = 15 mA lc = 150 mA
0 1 2 5 lU c f.V
hm /ti2