INT-A-pak ä Power Modules

(1)

71 A

FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR

IRK.F72.. SERIES

INT-A-pak ä Power Modules

Features

Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V_RMS isolating voltage Industrial standard package UL E78996 approved

Description

These series of INT-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required.

Parameters IRK.F72.. Units

I_T(AV) 71 A

@ T_C 90 °C

I_T(RMS) 158 A

I_TSM @ 50Hz 2100 A

@ 60Hz 2200 A

I²t @ 50Hz 21.6 KA²s

@ 60Hz 19.8 KA²s

I²√t 216 KA²√s

tq 20 and 25 µs

trr 2 µs

V_DRM/ V_RRM up to 1200 V

T_J range - 40 to 125 ^oC

Major Ratings and Characteristics

(2)

2 ELECTRICAL SPECIFICATIONS Voltage Ratings

Voltage V_RRM/V_DRM, maximum repetitive V_RSM, maximum non- I_RRM/I_DRMmax.

Type number Code peak reverse voltage repetitive peak rev. voltage @ T_J = 125°C

V V mA

08 800 800

12 1200 1200

I_T(AV) Maximum average on-state current 71 A 180° conduction, half sine wave

@ Case temperature 90 °C

IT(RMS) Maximum RMS current 158 A T

C = 90°C, as AC switch

ITSM Maximum peak, one-cycle, 2100 A t = 10ms No voltage

non-repetitive surge current 2200 t = 8.3ms reapplied

1750 t = 10ms 100% V

RRM

1830 t = 8.3ms reapplied Sinusoidal half wave, I²t Maximum I²t for fusing 21.6 KA²s t = 10ms No voltage Initial T_J = 125°C

19.8 t = 8.3ms reapplied

15.3 t = 10ms 100% V_RRM

14.0 t = 8.3ms reapplied

I²√t Maximum I²√t for fusing 216 KA²√s t = 0 to 10ms, no voltage reapplied V_T(TO)1 Low level value of threshold voltage 1.28 V (16.7% x π x I_T(AV) < I < π x I_T(AV)), T_J = T_Jmax.

V_T(TO)2 High level value of threshold voltage 1.32 (I > π x IT(AV)), T_J = T_Jmax.

r_t1 Low level value of on-state slope resistance 3.20 mW (16.7% x π x I_T(AV) < I < π x I_T(AV)), T_J = T_Jmax.

r_t2 High level value of on-state slope resistance 3.00 (I > π x I_T(AV)), T_J = T_Jmax.

V_TM Maximum on-state voltage drop 2.40 V I_pk = 350A, T_J = T_Jmax., t_p = 10ms sine pulse I_H Maximum holding current 600 mA T_J= 25°C, I_T > 30 A

I_L Typical latching current 1000 mA T_J= 25°C, V_A = 12V, Ra = 6Ω, Ig= 1A

Parameter IRK.F72.. Units Conditions

On-state Conduction

Frequency f Units

50Hz 140 230 220 345 1860 2590 A

400Hz 170 280 250 406 900 1290 A

2500Hz 135 210 210 330 320 470 A

5000Hz 115 180 205 310 205 310 A

10000Hz 85 140 165 235 - - A

Recovery voltage Vr 50 50 50 50 50 50 V

Voltage before turn-on Vd 80% V_DRM 80% V_DRM 80% V_DRM V

Rise of on-state current di/dt 50 50 - - - - A/µ s

Case temperature 90 60 90 60 90 60 °C

Equivalent values for RC circuit 22 Ω / 0.15 µF 22 Ω / 0.15 µF 22 Ω / 0.15 µF

I_TM I_TM

180^oel 100µs

I_TM 180^oel

Current Carrying Capacity

IRK.F72.. 30

(3)

3

Bulletin I27104 rev. A 09/97

TJ Max. junction operating temperature range - 40 to 125 °C T_stg Max. storage temperature range - 40 to 150

R_thJC Max. thermal resistance, junction to 0.17 K/W Per junction, DC operation case

R_thC-hs Max. thermal resistance, case to 0.035 K/W Mounting surface flat and greased

heatsink Per module

T Mounting torque ± 10% IAP to heatsink 4 - 6 (35 - 53) Nm busbar to IAP 4 - 6 (35 - 53) (lb*in)

wt Approximate weight 500 (17.8) g (oz)

dv/dt Maximum critical rate of rise of off-state 1000 V/µs T

J = 125°C., exponential to= 67% V

DRM

voltage

V_INS RMS isolation voltage 3000 V 50 Hz, circuit to base, T_J = 25°C, t = 1 s I_RRM Maximum peak reverse and off-state 30 mA T_J = 125°C, rated V_DRM/V_RRMapplied I_DRM leakage current

Blocking

di/dt Maximum non-repetitive rate of rise 800 A/µs Gate drive 20V, 20Ω, tr ≤ 1ms, V_D= 80% V

DRM

TJ = 125°C

trr Maximum recovery time 2 µs I_TM = 350A, di/dt = -25A/µs, V_R= 50V, T_J = 25°C

tq Maximum turn-off time K J I

TM = 350A, T

J = 125°C, di/dt = -25A/µs, 20 25 µs V_R= 50V, dv/dt = 400V/µs linear to 80% V_DRM

Switching

Triggering

PGM Maximum peak gate power 60 W f = 50 Hz, d% = 50

PG(AV) Maximum peak average gate power 10 W T

J = 125°C, f = 50Hz, d% = 50

IGM Maximum peak positive gate current 10 A T

J = 125°C, t_p < 5ms - V_GM Maximum peak negative gate voltage 5 V

IGT Max. DC gate current required to trigger 200 mA T

J = 25°C, V

ak 12V, Ra = 6

V_GT DC gate voltage required to trigger 3 V

I_GD DC gate current not to trigger 20 mA T_J = 125°C, rated V_DRMapplied

V_GD DC gate voltage not to trigger 0.25 V

Thermal and Mechanical Specifications

A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is not recommendd, busbars should be used and restrained during tightening. Threads must be lubricated with a compound

(4)

4 ∆ R

_thJC

Conduction

(The following table shows the increment of thermal resistance R

thJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions

180° 0.016 0.011 K/W T_J = 125°C

120° 0.019 0.020

90° 0.024 0.026

60° 0.035 0.037

30° 0.060 0.060

IRK T F 7 2 - 12 H K N

1 2 3

1 - Module type 2 - Circuit configuration 3 - Fast SCR

4 - Current rating: I_T(AV) x 10 rounded

5 - 1 = option with spacers and longer terminal screws 2 = option with standard terminal screws

6 - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) 7 - dv/dt code: H ≤ 400V/µs

8 - t_q code: K ≤ 20µs J ≤ 25µs 9 - None = Standard devices

N = Aluminum nitrade substrate 4 Device Code

Ordering Information Table

5 6 7 8 9

NOTE: To order the Optional Hardware see Bulletin I27900

(5)

5

- All dimensions in millimeters (inches) - Dimensions are nominal

- Full engineering drawings are available on request

- UL identification number for gate and cathode wire: UL 1385

- UL identification number for package:

UL 94V0

Outline Table

For all types A B C D E

IRK...1 25 (0.98) ---- ---- 41 (1.61) 47 (1.85) IRK...2 23 (0.91) 30 (1.18) 36 (1.42) ---- ----

IRKTF.. IRKHF.. IRKLF.. IRKUF.. IRKVF.. IRKKF.. IRKNF..

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 70

80 90 100 110 120 130

0 20 40 60 80 100 120

DC 30°

60°

90°

120°

180°

Average On-state Current (A)

Maximum Allowable Case Temperature (°C)

Conduction Period IRK.F72.. Series R (DC) = 0.25 K/W_thJC

70 80 90 100 110 120 130

0 10 20 30 40 50 60 70 80

30°

60°

90°

120°

180°

Average On-state Current (A)

Maximum Allowable Case Temperature (°C)

Conduction Angle IRK.F72.. Series R (DC) = 0.25 K/W_thJC

(6)

6

Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance Z_thJC Characteristic Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 4 - On-state Power Loss Characteristics Fig. 3 - On-state Power Loss Characteristics

0 20 40 60 80 100 120 140

0 10 20 30 40 50 60 70 80

RMS Limit

Conduction Angle

Maximum Average On-state Power Loss (W)

Average On-state Curre nt (A) 180°

120°

90°

60°

30°

IRK.F72.. Series Per Ju nction T = 125°C_J

0 20 40 60 80 100 120 140 160 180 200

0 20 40 60 80 100 120

DC 180°

120°

90°

60°

30°

RMS Limit

Conduction Period

Maximum Average On-state Power Loss (W)

Average On-state Current (A) IRK.F72.. Series Per Junction T = 125°C

J

800 1000 1200 1400 1600 1800 2000

1 10 100

Number Of Equal Amplitude Half Cycle Current Pulses (N) At Any Rated Load Condition And With

Rated V Applied Following Surge.RRM

Peak Half Sine Wave On-state Current (A)

IRK.F72.. Series Per Junction

Initial T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s J

800 1000 1200 1400 1600 1800 2000 2200

0.01 0.1 1

Peak Half Sine Wave On-state Current (A)

Pulse Train Duration (s) Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained.

Initial T = 125°C No Voltage Reapplied Rated V Reapplied_RRM

J

100 1000 10000

1 2 3 4 5 6 7 8 9 10

T = 25°C_J

Instantaneous On-state Current (A)

Instantaneous On-state Voltage (V) T = 125°C_J

0.001 0.01 0.1 1

0.001 0.01 0.1 1 10 100

Square Wave Pulse Duration (s)

thJCTransient Thermal Impedance Z (K/W)

IRK.F72.. Series Per Junction Steady State Value:

R = 0.25 K/W (DC Operation)

thJC

(7)

7

Fig. 9 - Reverse Recovery Charge Characteristic Fig. 10 - Reverse Recovery Current Characteristic

Fig. 11 - Frequency Characteristics

Fig. 12 - Frequency Characteristics 10 20 30 40 50 60 70 80 90 100 110 120

10 20 30 40 50 60 70 80 90 100

Maximum Reverse Recovery Current - Irr (A)

Rate Of Fall Of On-state Current - di/dt (A/µs) IRK.F72.. Series

T = 125 °C_J

I = 500 A_TM

300 A 200 A

100 A

50 A

20 40 60 80 100 120 140 160

10 20 30 40 50 60 70 80 90 100

Maximum Reverse Recovery Charge - Qrr (µC)

Rate Of Fall Of On-state Current - di/dt (A/µs) I = 500 A_TM

300 A

200 A

50 A IRK.F72.. Series

T = 125 °C_J

100 A

1E2 1E3 1E4

1E1 1E2 1E3 1E4

50 Hz 1000 400

2500 5000

Pulse Basewidth (µs)

Peak On-state Current (A)

Snubber circuit R = 22 ohms C = 0.15 µF V = 80% V

s s

D DRM

IRK.F72.. Series Sinusoidal Pulse T = 60 °C_C

150 tp

1E4 1E1 1E2 1E3 1E4

50 Hz 1000 400

2500 5000

s s

D DRM

IRK.F72.. Series Sinusoidal Pulse T = 90 °C_C

150 tp

1E1

1E2 1E3 1E4

1E1 1E2 1E3 1E4

50 Hz

400 1000 2500 5000

150

s s

D DRM

IRK.F72.. Series Trapezoidal Pulse T = 60 °C, di/dt 50A/µs_C tp

1E4 1E1 1E2 1E3 1E4

50 Hz

400 1000 2500 5000

Pulse Basewidth (µs) 150 IRK.F72.. Series Trapezoidal Pulse T = 60 °C, di/dt 100A/µs_C

s s

D DRM

tp

1E1

(8)

8

Fig. 15 - Gate Characteristics Fig. 13 - Frequency Characteristics

Fig. 14 - Maximum On-state Energy Power Loss Characteristics 1E2

1E3 1E4

1E1 1E2 1E3 1E4

50 Hz

400 1000 2500 5000

150

s s

D DRM

IRK.F72.. Series Trapezoidal Pulse T = 90 °C, di/dt 50A/µs_C tp

1E4 1E1 1E2 1E3 1E4

50 Hz

400 1000 2500 5000

s s

D DRM

IRK.F72.. Series Trapezoidal Pulse T = 90 °C, di/dt 100A/µs_C

150 tp

1E1

1E1 1E2 1E3 1E4

1

0.1

Peak On-state Current (A) 10 joules per pulse 2.55

0.5 0.25

0.05

IRK.F72.. Series Sinusoidal pulse tp

1E4 1E1 1E2 1E3 1E4

1

0.1

Pulse Basewidth (µs) 10 joules per pulse 5

2.5 0.5 0.25

0.05

IRK.F72..Series Trapezoidal Pulse di/dt = 50A/µs tp

1E1

0.1 1 10 100

0.01 0.1 1 10 100

VGD IGD

(b) (a)

Tj=25 °C

Tj=125 °C Tj=-40 °C

(1) (2) (3)

Instantaneous Gate Current (A) Instantaneous Gate Voltage (V) a) Recommended load line for

b) Recommended load line for

Rectangular gate pulse (1) PGM = 10W, tp = 10ms

(2) PGM = 20W, tp = 5ms (3) PGM = 40W, tp = 2.5ms

IRK.F72.. Series Frequency Limited by PG(AV) rated di/dt : 20 V, 10 ohms tr<=1 µs

<=30% rated di/dt : 10 V, 10 ohms tr<=1 µs