2N3947

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.SA

TELEPHONE: (973) 376-2922 (212)227-6008 FAX: (973) 3764960

2N3947

NPN SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCH

ELECTRICAL CHARACTERISTICS (25"C Ambient Temperature tmlu» otherwise noted)

SYMBO

BVceO

BVCEO

BV£BO

'CEX

•BL

hpE

VCE (sal) VBEtsal)

hf^B Cob

c

hle

hoe NF

CHARACTERISTIC

Collector to Biiso Bioakdown Voltage

Collector to Emitter Breakdown Voltage (Note 4)

Emitter to Biiso Breakdown

Vollaijt!

Collector Cutoff Current

Bust? Cutoff Current DC Current Gain (Note 4)

Collector to Emitter Saturation Voltage (Note 4)

Base to Emitter Saturation Voltage (Note 4)

Current Gain Bandwidth Product Output Capacitance

Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance

Moise Figure

2N3947 I ,,...,.

M.N. MAX. UNIT

60 V I 40 V

I G.O V

10 "A 15 I yA 25 nA 60 1 90

100 300 40

0.2 V 0.3 V 0.6 0.9 V 1.0 1 V 3.0 1

4.0 pF 8.0 I pF 2.0 12 1 k«

20 1 x10~4

100 700 1 5.0 SO 1 fimhos

5.0 I dB

1

TEST CONDITIONS

I C - I O f A . l E - O

IC" 10mA. IB ~ 0

IE - 10 iiA. (c-o

VCE - 40 v, VEB •= 3.0 v

VCE 10 v, V

» 3.0 v, T

- 150 c VCE -

°

-

EB = 3.0 v

l^c =0.1 mA. VCE - 1.0 V 1C - 1.0mA, VCE * 1.0 V

IG - 10mA, VCE • i.o v

1C = 50 tnA, VCE * 1.0 V

1C J 10 '"A. l(j - 1.0 mA

IG •• 50 mA, IB - 5.0 mA 1C = 10 mA, IB - 1,0 rnA C - 50 mA, IB - ^.0 mA

C = 10 mA, VCE =• 20 V. ( - 100 MHz E =0, VCB = 10 V. f = 100 kHz VEB 1.0 V, lc -0, f - 100 kH/

C - 1.0mA, VCE = 10 V, f - 1,0 kHz C = 1.0 mA, VCE - 10 V. f - 1.0kHz C - 1.0mA, VCE " 10 V, f - 1.0 kHz

c - 1.0mA, VCE * 10 V. f • 1.0 kHz C " 100 >JA. VCE " 5-0 V, RG » 1 .0 kU

10 Hz 10 15.7 kHz

Additional Electrical Characteristics on following pug*.

N.I Semi-Cimdiictors reserves the right to change lest conditions, parameter limits ;ind package dimensions without notice.

Inlbrmution tumisheil hy NJ Semi-Conductors is believed to he hoth accurate und reliable at the time of suing to press. Himever M.l Seini-C'iinductnis Assumes no rcipnnsihility for Jnv errors or omissions discovered in us use M Semi-Ci nductors enci unices

ELECTRICAL CHARACTERISTICS (25°C Ambient Tempnrature unless otherwise noted) (Cont'd)'

SYMBOL

'(1

Ir

<s

t f

r,,-Cc

CHARACTERISTIC

Onlay Time

(sno ti'sl circuit no. 526) Risi.1 Time

(sue irsl circuit no. 526) Siomgi! Tirnu

(see test circuit no. 527) Fall Time

(SRC test circuit no, 527) Collector to Base Time Constant

2N3947 MIN. MAX.

35

300

375

75

200

UNITS ns

ns

ns

ns

PS

TEST CONDITIONS

VCC = 3.0 V, VB E ( O F F, = 0 . 5 V , 1C » 10 mA. Igi =1.0 mA VCC - 3.0 V. VB E (OFF) = 0.5V, 1C " 10 mA, IBI J '-0 mA Vcc = 3-0 V, 1C " 10 mA.

IBI

iB2 •" i-°

VCG = 3.o v, IG = 10 mA.

Ifll = 'B2 • 1-0 mA

1C • 10 mA, VCE " 20 V. f - 31 .8 MM/

__ 1

NOTES:

t. These rijtinys are limiting values abovo which tho serviceability of any individual semiconductor device may bu impaired.

2. These are steady state limits. The factory should be consulted on application involving pulsed or low duty cycle operations.

3. These ratings give a maximum junction temperature of 200"C anil junction to ambient thermal resistance of 486 C/W (<iuratin<| f a c t o r of 2.06 inW/''O; junction to case thermal resistance of 14G"C/W (derating factor of 6.9 mW/"O.

4. Pulse coiiHitions: )un<|th • 3OO A's; du ty cyclo - 2%.

(TO-18) METAL

™*

II

«

urn

S!!

131'!!

o.«»

tanW 1.711

11.71 us

«•

MAX

!M

<K 133

VI

scUt) M'II)

5C '-V

MH P2tt 01V8 0.17B

0.01?

0.10

°«ff

0.^

-JSSL, Olfl

_^

fwSx"

0730 O.I9B 0210

0.030

.un

ISC Dl^f

o.Ma

sc p.w

3 Collector