CPH6020

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http://onsemi.com

Semiconductor Components Industries, LLC, 2013

August, 2013

CPH6020

RF Transistor

8V, 150mA, fT=16GHz, NPN Single CPH6

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Features

•

Low-noise use : NF=1.2dB typ (f=1GHz)

•

High cut-off frequency : fT=16GHz typ (VCE=5V)

•

High gain : |S21e|

²

=13.5dB typ (f=1GHz)

Specifi cations

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to- Base Voltage VCBO 15 V

Collector-to-Emitter Voltage VCEO 8 V

Emitter-to-Base Voltage VEBO 2 V

Collector Current IC 150 mA

Collector Dissipation PC When mounted on ceramic substrate (250mm²×0.8mm) 700 mW

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Package Dimensions unit : mm (typ)

7018A-002

Product & Package Information

• Package : CPH6

• JEITA, JEDEC : SC-74, SOT-26, SOT-457

• Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking

Electrical Connection

1, 2, 5, 6

4 3

GT

LOT No.

TL

1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector CPH6

3 2 1

6 5 4

2.9

0.05

0.4

2.8 1.6 0.2

0.60.60.9 0.2

0.15

0.95

CPH6020-TL-E

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Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions Ratings

min typ max Unit

Collector Cutoff Current ICBO VCB=5V, IE=0A 1.0 μA

Emitter Cutoff Current IEBO VEB=1V, IC=0A 1.0 μA

DC Current Gain hFE VCE=5V, IC=50mA 60 150

Gain-Bandwidth Product fT VCE=5V, IC=50mA 13 16 GHz

Forward Transfer Gain | S21e |² VCE=5V, IC=50mA, f=1GHz 10 13.5 dB

Noise Figure NF VCE=1V, IC=10mA, f=1GHz 1.2 1.8 dB

Notre) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.

Ordering Information

Device Package Shipping memo

CPH6020-TL-E CPH6 3,000pcs./reel Pb Free

Cre -- VCB hFE -- IC

Collector-to-Emitter Voltage, VCE -- V

Collector Current, I C - - mA

Base-to-Emitter Voltage, VBE -- V

IC -- VBE

Collector Current, I C - - mA

IC -- VCE

IT14950

0 0.2 0.4 0.6 0.8 1.0 1.2

IT14951

0 2 4 6 8

0 20 40 60 140

80 100 120

0 30 60 90 150

120

V CE

=1V

5V

IB=0mA 0.3mA

0.6mA 0.9mA

1.2mA 1.5mA

3 5

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Collector Current, IC -- mA

NF -- IC

Noise Figure, NF -- dB

Ambient Temperature, Ta -- °C

PC -- Ta

Collector Dissipation, P C - - mW

Collector Current, IC -- mA

|S21e|

²

-- IC

Forward T ransfer Gain, |S21e |

2

- - dB

Collector Current, IC -- mA

fT -- IC

Gain-Bandwidth Product, f T - - GHz

Collector-to-Base Voltage, VCB -- V

Cob -- VCB

Output Capacitance, Cob - - pF

IT14958 16

14

12

10

8 6

4

2

3 10

2 5 7 2 3 5 7 100 2 3

1.0

IT14956

IT14955 7

2 3 5

7

7 5 10

1.0

1.0 2 3 5 7 10 2 3 5 7 100 2 3

IT14957

1.0 2 3 5 7 10 2 3 5 7 100

0 1 2 3 4

VCE=1V 5V f=1GHz

7 2

2 5

3 1.0

3

2 5 10

0.1 7 1.0 2 3 5 7

f=1MHz

IT14954

VCE=5V f=1GHz

00

20 40 60 80 100 120 140 160

700 600 800

500

300 400

200 100

When mounted on ceramic substrate

(250mm

²

×0.8mm)

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Embossed Taping Specifi cation

CPH6020-TL-E

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Outline Drawing Land Pattern Example CPH6020-TL-E

Mass (g) Unit 0.015

* For reference mm

Unit: mm

0.6

2.41.4

0.95 0.95

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