CPH3101

http://onsemi.com

Semiconductor Components Industries, LLC, 2013

CPH3101

Bipolar Transistor

–30V, –2A, Low VCE(sat), PNP Single CPH3

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Applications

•

Relay drivers, lamp drivers, motor drivers, fl ash

Features

•

Adoption of FBET and MBIT processes

•

Large current capacity

•

Low collector-to-emitter saturation voltage

•

High-speed switching

•

Ultrasmall-sized package permitting applied sets to be made small and slim

•

High allowable power dissipation

Specifi cations

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO --30 V

Collector-to-Emitter Voltage VCEO --30 V

Emitter-to-Base Voltage VEBO --6 V

Collector Current IC --2 A

Collector Current (Pulse) ICP --4 A

Base Current IB --400 mA

Collector Dissipation PC When mounted on ceramic substrate (600mm²×0.8mm) 0.9 W

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Package Dimensions unit : mm (typ)

7015A-003

Product & Package Information

• Package : CPH3

• JEITA, JEDEC : SC-59, TO-236, SOT-23

• Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking

Electrical Connection

3

2 1

AA

TL

CPH3101-TL-E

1 : Base 2 : Emitter 3 : Collector CPH3

2.9

0.05

0.4

2.8 1.6 0.2

0.60.60.9 0.2

0.15

2 1

3

0.95

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions Ratings

min typ max Unit

Collector Cutoff Current ICBO VCB= --20V, IE=0A --0.1 μA

Emitter Cutoff Current IEBO VEB= --3V, IC=0A --0.1 μA

DC Current Gain hFE VCE= --2V, IC= --100mA 200 400

Gain-Bandwidth Product fT VCE= --10V, IC= --50mA 150 MHz

Output Capacitance Cob VCB= --10V, f=1MHz 32 pF

Collector-to-Emitter Saturation Voltage VCE(sat) IC= --1.5A, IB= --75mA --350 --600 mV

Base-to-Emitter Saturation Voltage VBE(sat) IC= --1.5A, IB= --75mA --0.85 --1.2 V

Collector-to-Base Breakdown Voltage V(BR)CBO IC= --10μA, IE=0A --30 V

Collector-to-Emitter Breakdown Voltage V(BR)CEO IC= --1mA, RBE=∞ --30 V

Emitter-to-Base Breakdown Voltage V(BR)EBO IC= --10μA, IC=0A --6 V

Turn-ON Time ton

See specifi ed Test Circuit.

60 ns

Storage Time tstg 350 ns

Fall Time tf 25 ns

Switching Time Test Circuit

Ordering Information

Device Package Shipping memo

CPH3101-TL-E CPH3 3,000pcs./reel Pb Free

VR RL

VCC= --12V VBE=5V

IC=20IB1= --20IB2= --500mA

+ +

50Ω

INPUT OUTPUT

1kΩ

100μF 470μF PW=20μs

IB1 IB2 D.C.≤1%

IC -- VCE IC -- VBE

hFE -- IC

DC Current Gain, h FE

Collector Current, IC -- A

f T -- IC

Collector Current, IC -- mA Gain-Bandwidth Product, f T

-- MHz

Cob -- VCB

Collector-to-Base Voltage, VCB -- V

Output Capacitance, Cob - - pF

VCE(sat) -- IC

Collector Current, IC -- A Collector -to-Emitter Saturation V o ltage, V CE (sat) - - V

PC -- Ta A S O

Collector-to-Emitter Voltage, VCE -- V Collector Current, I C -- A

Ambient Temperature, Ta -- °C Collector Dissipation, P C - - W

IC ICP

1ms 10ms 100ms DC operation

100 μs 500

μ_s

3 2 5 7 --0.1 3 2 5 7 3 2 5 7

--1.0

2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7

1.2

1.0 0.9 0.8

0.6

0.4

0.2

00 20 40 60 80 100 120 140 160

IT16953 IT16954

Ta=25°C Single pulse

When mounted on ceramic substrate (600mm

✕0.8mm)

1000 7 5

3 2

100 7 5

3 2

10

2

100

7

5

3

2

10 1000 7 5

3 2

100 7 5

3 2

10

VCE= --2V VCE= --10V

--10 2 3 5 7 2 3 5 7 --1000 2 3 5

--100

2 3 5 7 --10 2 3 5 7

--1.0

--100

--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 10

f=1MHz

3 2

--1.0 7 5 3 2

0.1 7 5 3 2

0.01

IC / IB=10

5 7 --0.01 2 3 5 7 --0.1 2 3 5 7--1.0 2 3 5

IT16949 IT16950

IT16947 IT16947

When mounted on ceramic substrate

Embossed Taping Specifi cation

CPH3101-TL-E

Outline Drawing Land Pattern Example CPH3101-TL-E

Mass (g) Unit 0.013

* For reference mm

Unit: mm

0.6

2.4

0.95 0.95

1.4