i, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.S.A.
TELEPHONE: (973) 378-2922 (212) 227-6005 FAX: (973) 376-6960
2N3634 2N3635
PNP SILICON TRANSISTOR
JEDEC TO-39 CASE
MAXIMUM RATINGS (TA=25°C)
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation
Power Dissipation (Tc=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
ic
PD PD
TJ>Tstg
©JA
<=>JC
140 140 5.0
1.01.0 5.0
-65 to +200175 35
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL
'CBO
'EBO
BVCBO
BVEB0
VCE(SAT)
VCE(SAT) VRE(SAT)
VBE(SAT)
TEST CONDITIONS VCB=100V
VEB=3.0V IC=100MA lc=10mA
!E=10uA IC=10mA, lB=
lrj=50mA, lB=
IC=10mA, lB=
lc=50mA, !B=5.0mA
MIN
140 140 5.0
MAX
V V V A W W
°C
°C/W
°C/W
UNITS
0.65
100 50
0.3 0.5 0.8 0.9
nA nA V V V V V V V
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
ELECTRICAL CHARACTERISTICS (Continued) SYMBOL
hFE hFE
hFE
FE
cibo NF ton toff
2N3634 TEST CONDITIONS MIN MAX VCE=10V, lc=0.1mA 40
VCE=10V, lc=1.0mA 45 VCE=10V, lc=10mA 50
VCE=10V, lc=50mA 50 150 VCE=10V, lc=150mA 25
VCE=30V, lc=30mA, f=100MHz 150
VCB=20V,lE=0,f= 1.0MHz 10 VEB=1.0V, lc=0, f=1.0MHz 75 VCE=10V, lc=0.5mA, RS=1.0kQ, f=1.0kHz 3.0 VCC=100V, VBE=4.0V, lc=50mA, lB1=lB2=5mA 400 VCC=100V, VBE=4.0V, lc=50mA, !Bi=lB2=5mA 600
JEDEC TO-39 CASE - MECHANICAL OUTLINE
2N3635 MIN
80 90 100 100 50 200
MAX
300
10 75 3.0 400 600
UNITS
MHz PF PF dB ns ns
All Dimensions in Inches (mm).
335(851) ^ 370(9 401 315(8001 j 3351851)
I
i .280^.60124016101T
028(0 7d>
03<"0861
/'' _/ 029(0.74) 045(114)
Lead Code:
1) Emitter 2) Base 3) Collector
