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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.SA
2N3009 2N3013 2N3014
TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS
2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications.
MAXIMUM RAT|NGS_ (TA=*25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO
Col lector-Emitter Voltage V^ES Collector-Emitter Voltage VCEQ Emitter-Base Voltage VEBQ Collector
Col lector Power Diss Power Diss Oper. and ELECTRICAL
SYMBOL 'CES
>B BVCBO BVCES
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
V
CE(SAT) VCE(SAT)
V
BE(SAT)
I* * *
VBE(SAT) VBE(SAT)
VBE(SAT)
nFE
hFE hpE
hFE
hFE cob Cib
^on toff toff TS
Current 1^
Current Peak (lO^s pulse) lc
i pat ion PD i pat ion (Tc=25°C) PD Storage Junction Temp. Tj ,
CHARACTERISTICS (TA=25°C)
TEST CONDITIONS VCE-20V
VC£-20V, VBE*0 lc-100yA
l^alOOyA lc=10mA IE»100VA
lc=30mA, lB=»3-OmA lc=»100mA, lB=10mA lr=300mA. iD^SOmA lw 0c=10mA, !B=1.0mA lr=30mA, lu ' vRa3.0mA lc=100mA, TB=10mA lc=300mA, lB=30mA lc=10mA, I B-1. OmA VrFL L " U "^=0.4V, lr»30mA VcE=0.4V, lc=10mA VcE=0'5v> lr=1OOmA VCE=1.0V, lc=100mA VrF=1.0V, lr=300mA
VCE=10V, lc-3UmA, f-100MHz VCB-5.0V, IE-0, f-1 40kHz VBE="0.5, lc=0» f=l40kHz Vcc"15v» tc=300mA» lg1-30mA VCC=2.0V, lc=30mA, lBi=3.0mA Vcc*15v> lc=3°0mAt 1 81s 182=3011^
Vrc=2.0V. lr=30mA, 1 B1=' 82=3- OmA lra|oi=| R2a10mA
Tstg
2N3009 2N3013 40
40 15 4.0 200
500
360 1.2
^N3009 . M I N
40 40 4.015
0.75
30 - 25
—15 350
MAX 0.5 0.5
0.18 0.28 0.5 0.95
1.2 1.7 120
5.0 8.0 15 25- -18
-65 40 40 15 5.0 200 500 360 1.2
2N3014 40 40 20
5-0
200 500 300 1.2 TO +200
.2N3013 M I N
40 40 15 5.0
0.75
30— 25
—15 350
MAX 0.3
0.3
0.18 0.28
0.5
0.95 1.2 1.7 120
5.0 8.0 15 25—
—18
2N3014 M I N
40 40 20 5.0
0.75
0.7 30 25- 25
-
350
MAX 0.3
0.3
0.18 0.35
~
0.18 0.95 1.2 0.8 120
5.0 8.0 - 16 - 25 18
UNIT V V V V mA mA mW oW,
UNIT
V V V V V V V V V V V V
MHz pF pF ns ns ns ns ns
NJ Senii-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
