SGS-THOMSON
MJE13009
HIGH VOLTAGE, HIGH SPEED, POWER SWITCHING
DESCRIPTION
The MJE13008 and MJE13009 are silicon multiepi- taxial mesa NPN transistors. They are mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators deflection cir
cuits, etc.
INTERNA L S C H EM ATIC DIAGRAM
Ce
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter
Value MJE13008 MJE13009 Unit
VcEO Collector-emitter Voltage ( Ib= 0) 300 400 V
Vc e v Collector-emitter Voltage 600 700 V
Vebo Emitter-base Voltage (lc = 0) 9 V
lc Collector Current 12 A
1c m Collector Peak Current (tp < 10ms) 24 A
Ib Base Current 6 A
Ibm Base Peak Current (tp < 10ms) 12 A
Ie Emitter Current 18 A
Ie u Emitter Peak Current 36 A
P to t Total Power Dissipation at T c a s e £ 25°C 100 W
T s tg Storage Temperature - 6 5 to 150 °C
T i Junction Temperature 150 °C
December 1988 1/5
M JE13008-MJE13009
THERMAL DATA
Rth j-case Thermal Resistance Junction-case Max 1.25 =C/W
ELECTRICAL CHARACTERISTICS
( T caSe= 25°C unless otherwise specified)
Sym bol P aram e ter T e s t C onditions Min. Typ. M ax. Unit
Ie b o Emitter Cutoff Current (lc = 0) V EB = 9 V 1 mA
o m < Collector Cutoff Current Vc e v = rated value 1 mA
VbE(oM) = 1.5V Vc e v = rated value V E B (o ff) = 1 -5 V
T case = 1 0 0 ° C 5 mA
V c E O (s u s ) Collector-Emitter Sustaining l c = 10 mA Ie = 0
Voltage fo r M J E 1 3008 3 0 0 V
for M J E 1 3009 400 V
V c E ( s a t)* Collector-emitter Saturation l c = 5 A Is = 1A 1 V
Voltage lc = 8A lB = 1.6A 1.5 V
lc = 12A l B = 3 A 3 V
l c = 8 A T case = 1 0 0 ° C
l B « 1.6A
2 V
V B E (sa t)* Base-emitter Saturation l c = 5 A l B = 1A 1.2 V
Voltage l c = 8 A l B = 1.6A 1.6 V
l c = 8 A T case = 1 0 0 ° C
l B = 1.6A
1.5 V
hFE * DC Current Gain l c = 5 A V CE - 5V 8 40
l c = 8 A V CE - 5V 6 3 0
f l Transition Frequency lc = 500mA V0E = 10V 4 MHz
Co b Output Capacitance VCB - 1 0 V f = 0.1 MHz
l E = 0 180 pF
to n Turn-on Time RESISTIVE LOAD 1.1 ps
t. Storage Time V cc = 1 2 5 V lc = BA
3 ps
tf Fall Time Duty Cycle < 1% 0 .7 ps
* Pulsed : pulse duration = 300ns, duty cycle < 2%.
Safe Operating Areas. DC Current Gain.
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Collector-emitter Saturation Voltage.
K ) - ' 1 10 lc (A )
Base-emitter Saturation Voltage.
G-5680
Switching Times Resistive Load (see fig. 2).
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—
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1
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in
VCC=12SV l B1=* , B2 h FE = 5 T e a s e d
:
0 2 A 6 8 10 12 lc (A)
Collector-emitter Saturation Voltage.
0 1 2 3 lB ( A)
Collector Current Spread vs. Base-emitter Voltage.
Switching Times Inductive Load (see fig. 1).
0 2 A 6 8 10 12 lc ( A )
SGS-THOMSON
MC»aSIU!CTIR®KOC§
3/5
MJE13008-MJE13009
Switching Times vs. Tease Inductive Load.
180
160
H O
120 100
80
60
40 20 0
25 50 75 100 Tc a s e C C >
Clamped Reverse Bias Safe Operating Areas..
•c
( A )
12
10
8
6
0 100 2 0 0 3 0 0 4 0 0 50 0 VC £ c la m p (V )
Dynamic Collector-emitter Saturation Voltage (see fig. 2).
Figure 1 : Switching Times Test Circuit on Inductive Load.
+ 6 V
D1, D2 - Fast recovery diodes
Q1. Q2 - Transistors SGS : 2N5191, 2N5195
4/5 HZ
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Figure 2 : Switching Times Test Circuit on Resistive Load and
VcE(sat)Dyn. Test Circuit.
SGS-THOMSON
HCM SU SEViM H5 /5
