© 1999 IXYS All rights reserved 1 - 3
Phase Control Thyristors VRRM = 1200-1800 V I
T(RMS) = 600 A
I
T(AV)M= 380 A
VRSM VRRM Type
VDSM VDRM
V V
1300 1200 CS 300-12io3 1700 1600 CS 300-16io3 1900 1800 CS 300-18io3
Symbol Test Conditions Maximum Ratings
IT(RMS) TVJ = TVJM 600 A
IT(AV)M Tcase= 85°C; 180° sine 330 A
Tcase= 75°C; 180° sine 380 A
ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 8500 A
VR = 0 t = 8.3 ms (60 Hz), sine 9000 A
TVJ = TVJM t = 10 ms (50 Hz), sine 8000 A
VR = 0 t = 8.3 ms (60 Hz), sine 8500 A
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 360 000 A2s VR = 0 t = 8.3 ms (60 Hz), sine 340 000 A2s TVJ = TVJM t = 10 ms (50 Hz), sine 320 000 A2s VR = 0 t = 8.3 ms (60 Hz), sine 303 500 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 1000 A 100 A/µs f = 50Hz, tP =200µs
VD = 2/3 VDRM
IG = 1 A non repetitive, IT = IT(AV)M 500 A/µs diG/dt = 1 A/µs
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/µs RGK = ∞; method 1 (linear voltage rise)
PGM TVJ = TVJM tP= 30 µs 120 W
IT = IT(AV)M tP = 10 ms 10 W
VRGM 10 V
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
Md Mounting torque 3.5 Nm
31 lb.in.
Weight 500 g
Dimensions in mm (1 mm = 0.0394") Features
● Thyristor for line frequencies
● International flat base package
● Planar glassivated chip
● Long-term stability of blocking currents and voltages Applications
● Motor control
● Power converter
● AC power controller Advantages
● Space and weight savings
● Simple mounting
● Improved temperature and power cycling
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
CS 300
4
1 2
3
1 = Anode, 2 = Cathode, 3 = Gate, 4 = Auxiliary Cathode
2
1
4 3
Not for new application
© 1999 IXYS All rights reserved 2 - 3
0.0 0.5 1.0 1.5 2.0
0 250 500 750 1000 1250
10-2 10-1 100 101 10-1
100 101 102
0 100 200 300 400 500 0
1 2 3 4
IT tgd
VG V
IG IG VT
µs A
A V
mA
Symbol Test Conditions Characteristic Values
IR, ID TVJ = TVJM; VR = VRRM; VD = VDRM ≤ 40 mA
VT IT = 1000 A; TVJ = 25°C ≤ 1.43 V
VT0 For power-loss calculations only (TVJ = 125°C) 1.0 V
rT 0.43 mΩ
VGT VD = 6 V; TVJ = 25°C ≤ 2.0 V
TVJ = -40°C ≤ 2.8 V
IGT VD = 6 V; TVJ = 25°C ≤ 150 mA
TVJ = -40°C ≤ 250 mA
VGD TVJ = TVJM; VD = 2/3 VDRM ≤ 0.2 V
IGD ≤ 1 mA
IL TVJ = 25°C; tP = 10 µs ≤ 100 mA
IG = 0.7 A; diG/dt = 0.7 A/µs
IH TVJ = 25°C; VD = 6 V; RGK = ∞ ≤ 100 mA
tgd TVJ = 25°C; VD = 1/2 VDRM ≤ 2 µs
IG = 0.7 A; diG/dt = 0.7 A/µs
tq TVJ = TVJM; IT =330 A, tP = 300 µs; di/dt = -20 A/µs typ. 150 µs VR = 100 V; dv/dt = 20 V/µs; VD = 2/3 VDRM
RthJC DC current 0.09 K/W
RthJH DC current 0.12 K/W
dS Creepage distance on surface 1.55 mm
dA Strike distance through air 1.55 mm
a Max. acceleration, 50 Hz 50 m/s2
CS 300
Fig. 1 Gate voltage and gate current Triggering:
A = no; B = possible; C = safe
Fig. 2 Gate controlled delay time tgd a = limit; b = typical
Fig. 3 On-state characteristics a = typical; b = limit b
a
a b
TVJ= 125°C TVJ= 25°C
IGT: TVJ= 0°C IGT: TVJ= 25°C IGT: TVJ= -40°C B
B B
A IGD: TVJ= 25°C IGD: TVJ=125°C
C
© 1999 IXYS All rights reserved 3 - 3
CS 300
Fig. 6 Power dissipation versus on-state current and ambient temperature (sinusoidal current)
20 40 60 80 100 120 140 0 100 200 300 400 500 600 700
0 100 200 300 400 500 600
0 100 200 300 400 500 600 700 62 71 80 89 98 107 116
125
0 PT
W
IT(AV)M A
Tamb
°C PT W
Tc
°C
20 40 60 80 100 120 140 0 100 200 300 400 500 600 700
0 100 200 300 400 500 600
0 100 200 300 400 500 600 700 62 71 80 89 98 107 116
125
0 PT
W
IT(AV)M A
Tamb
°C PT W
Tc
°C
0 50 100 150
0 100 200 300 400 500
10-3 10-2 10-1 100 101 1000
2000 3000 4000 5000 6000 7000 8000 9000
IT(AV)M ITSM
A
t Tc
A
s °C
Fig. 7 Power dissipation versus on-state current and ambient temperature (rectangular current) Fig. 4 Surgeoverload current
ITSM: crest value, t: duration
Fig. 5 Maximum forward current at case temperature 180° sine VR = 0 V
TVJ = 45°C TVJ = 125°C
RthCA = 0.03 K/W+RthHA RthCA :
0.07 K/W 0.12 K/W 0.165 K/W 0.28 K/W 0.85 k/W
DC 180° sin 120° sin 90° sin 60° sin 30° sin
DC 180°
120°
90°
60°
30°
RthCA = 0.03 K/W+RthHA RthCA :
0.07 K/W 0.12 K/W 0.165 K/W - K 25 (S) 0.28 K/W 0.85 k/W - K 25 (S)
ase
