RB731U
Diodes
Schottky barrier diode
RB731U
!Applications High speed switching.
!Features
1) Small surface mounting type. (SMD6) 2) Low V
Fand low I
R.
3) Three diodes in parallel for easy installation.
!Construction Silicon epitaxial planar
! ! !
!External dimensions (Units : mm)
ROHM : SMD6 EIAJ : SC-74 JEDEC : SOT-457
0.8±0.1 0.95 0.95
1.9±0.2 2.9±0.2
1.1
0.3 0.15
0∼0.1
1.6 2.8±0.2 0.3∼0.6+0.1
−0.06
−0.05+0.1
−0.1+0.2
+0.2−0.1
D 3 P
!Circuit
! ! !
!Absolute maximum ratings (Ta=25 °C)
Parameter Symbol Limits Unit
Peak reverse voltage VRM 40 V
DC reverse voltage VR 40 V
Mean rectifying current IO 30 mA
Peak forward surge current∗ IFSM 200 mA
Junction temperature Tj 125 ˚C
Storage temperature Tstg −40∼+125 ˚C
∗ 60 Hz for 1
!
! !
!Electrical characteristics (Ta=25 °C)
Note) ESD sensitive product handling required.
Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage VF − − 0.37 V IF=1mA
Reverse current IR − − 1 µA VR=10V
Capacitance between terminals CT − 2.0 − pF VR=1V, f=1MHz
RB731U
Diodes
!
! !
!Electrical characteristic curves (Ta=25 °C)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1m
10m
100m pulse measurement
1µ 10µ 100µ
Ta=125˚C
Ta=75˚C Ta=25˚C Ta=−25˚C 1000m
Typ.
FORWARD CURRENT : IF (A)
FORWARD VOLTAGE : VF (V)
Fig.1 Forward characteristics
0
Ta=125˚C
Ta=75˚C
Ta=25˚C
Ta=−25˚C
1n 10n 100n 1µ 10µ 100µ
5 10 15 20 25 30 35
REVERSE CURRENT : IR (A)
REVERSE VOLTAGE : VR (V)
Fig.2 Reverse characteristics
0 2 4 6 8 10 12 14
1 2 5 10 20 50 100
CAPACITANCE BETWEEN TERMINALS : CT (pF)
REVERSE VOLTAGE : VR (V)
Fig.3 Capacitance between terminals characteristics
00 20 40 60 80 100
25 50 75 100 125
Io CURRENT (%)
AMBIENT TEMPERATURE : Ta (˚C)
Fig.4 Derating curve (mounting on glass epoxy PCBs)
