BFG135

DATA SHEET

Product specification

File under discrete semiconductors, SC14

1995 Sep 13

BFG135

NPN 7GHz wideband transistor

NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated

emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level.

The distribution of the active areas across the surface of the device gives an excellent temperature profile.

PIN DESCRIPTION

1 emitter

2 base

3 emitter

4 collector

Fig.1 SOT223.

age 4

1 2 3

MSB002 - 1

Top view

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Note

1. T_s is the temperature at the soldering point of the collector tab.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V_CBO collector-base voltage open emitter − − 25 V

V_CEO collector-emitter voltage open base − − 15 V

I_C DC collector current − − 150 mA

P_tot total power dissipation up to T_s= 145°C (note 1) − − 1 W

h_FE DC current gain I_C= 100 mA; V_CE= 10 V; T_j= 25°C 80 130 − f_T transition frequency I_C= 100 mA; V_CE= 10 V; f = 1 GHz;

T_amb= 25°C − 7 − GHz

G_UM maximum unilateral power gain

I_C= 100 mA; V_CE= 10 V; f = 500 MHz;

T_amb= 25°C − 16 − dB

I_C= 100 mA; V_CE= 10 V; f = 800 MHz;

T_amb= 25°C − 12 − dB

V_o output voltage d_im=−60 dB; IC= 100 mA; V_CE= 10 V;

R_L= 75Ω; T_amb= 25°C;

f_(p+q−r)= 793.25 MHz

− 850 − mV

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V_CBO collector-base voltage open emitter − 25 V

V_CEO collector-emitter voltage open base − 15 V

V_EBO emitter-base voltage open collector − 2 V

I_C DC collector current − 150 mA

P_tot total power dissipation up to T_s= 145°C (note 1) − 1 W

T_stg storage temperature −65 150 °C

T_j junction temperature − 175 °C

THERMAL CHARACTERISTICS

Note

1. T_s is the temperature at the soldering point of the collector tab.

CHARACTERISTICS

T_j= 25°C unless otherwise specified.

Notes

1. d_im=−60 dB (DIN 45004B); IC= 100 mA; V_CE= 10 V; R_L= 75Ω; Tamb= 25°C;

V_p= V_o at d_im=−60 dB; fp= 445.25 MHz;

V_q= V_o−6 dB; fq= 453.25 MHz;

V_r= V_o−6 dB; fr= 455.25 MHz;

measured at f_(p+q−r)= 443.25 MHz.

2. d_im=−60 dB (DIN 45004B); IC= 100 mA; V_CE= 10 V; R_L= 75Ω; Tamb= 25°C;

V_p= V_o at d_im=−60 dB; fp= 795.25 MHz;

V_q= V_o−6 dB; f_q= 803.25 MHz;

V_r= V_o−6 dB; fr= 805.25 MHz;

measured at f_(p+q−r)= 793.25 MHz.

SYMBOL PARAMETER CONDITIONS THERMAL

RESISTANCE R_{th j-s} thermal resistance from junction to soldering

point

up to T_s= 145°C (note 1) 30 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I_CBO collector cut-off current I_E= 0; V_CB= 10 V − − 1 µA

h_FE DC current gain I_C= 100 mA; V_CE= 10 V 80 130 −

C_c collector capacitance I_E= i_e= 0; V_CB= 10 V; f = 1 MHz − 2 − pF C_e emitter capacitance I_C= i_c= 0; V_EB= 0.5 V; f = 1 MHz − 7 − pF

C_re feedback capacitance I_C= 0; V_CE= 10 V; f = 1 MHz − 1.2 − pF

f_T transition frequency I_C= 100 mA; V_CE= 10 V; f = 1 GHz;

T_amb= 25°C − 7 − GHz

G_UM maximum unilateral power gain

I_C= 100 mA; V_CE= 10 V;

f = 500 MHz; T_amb= 25°C − 16 − dB

I_C= 100 mA; V_CE= 10 V;

f = 800 MHz; T_amb= 25°C − 12 − dB

V_o output voltage note 1 − 900 − mV

note 2 − 850 − mV

d₂ second order intermodulation distortion

I_C= 90 mA; V_CE= 10 V;

V_O= 50 dBmV; T_amb= 25°C;

f_(p+q)= 450 MHz;

f_p= 50 MHz; f_q= 400 MHz

− −58 − dB

I_C= 90 mA; V_CE= 10 V;

V_O= 50 dBmV; T_amb= 25°C;

f_(p+q)= 810 MHz;

f_p= 250 MHz; f_q= 560 MHz

− −53 − dB

List of components (see test circuit)

Note

1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.

The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (ε_r= 2.2); thickness

1⁄16 inch; thickness of copper sheet¹⁄32 inch.

DESIGNATION DESCRIPTION VALUE UNIT DIMENSIONS CATALOGUE NO.

C1, C3, C5, C6 multilayer ceramic capacitor 10 nF 2222 590 08627

C2, C7 multilayer ceramic capacitor 1 pF 2222 851 12108

C4 (note 1) miniature ceramic plate capacitor 10 nF 2222 629 08103

L1 microstripline 75 Ω length 7 mm;

width 2.5 mm

L2 microstripline 75 Ω length 22mm;

width 2.5 mm

L3 (note 1) 1.5 turns 0.4 mm copper wire int. dia. 3 mm;

winding pitch 1 mm

L4 microstripline 75 Ω length 19 mm;

width 2.5 mm

L5 Ferroxcube choke 5 µH 3122 108 20153

L6 (note 1) 0.4 mm copper wire ≈25 nH length 30 mm

R1 metal film resistor 10 kΩ 2322 180 73103

R2 (note 1) metal film resistor 200 Ω 2322 180 73201

R3, R4 metal film resistor 27 Ω 2322 180 73279

Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.

handbook, full pagewidth

MBB284 DUT

,,



 ,





VBB

C3 R1 L1 C1

C2 input L2

75

R2 L6

R3 R4

L3 C4





C7 C5

C6 L5

output 75 VCC

L4 Ω

Ω

Fig.3 Intermodulation distortion test printed-circuit board.

handbook, full pagewidth

MBB299 75

input

75 output C6

C7 C5

L5 VCC VBB

R1 C3

C1

C2

L1 L2 L4

R3

R2

R4 C4

L6

Ω L3 Ω

andbook, full pagewidth

MBB298 80 mm

60 mm

handbook, full pagewidth

MBB297

Fig.4 Power derating curve.

handbook, halfpage

0 50 100 200

0.8

0.6

0.2

0 0.4

MBB300

150 T ( C)o

s Ptot

(W) 1.0 1.2

Fig.5 DC current gain as a function of collector current.

handbook, halfpage

0 160

120

80

40

40 80 160

MBB294

120 I (mA)C hFE

VCE= 10 V; Tj= 25°C.

Fig.6 Feedback capacitance as a function of collector-base voltage.

IE= 0; f = 1 MHz; Tj= 25°C.

handbook, halfpage

0 3

2

1

0

4 20

MBB295

8 12 16

V (V)CB C re

(pF)

Fig.7 Transition frequency as a function of collector current.

VCE= 10 V; f = 1 GHz; Tamb= 25°C.

handbook, halfpage

0 40 80 160

8

6

2

0 4

MBB296

120 I (mA)C (GHz)

fT

Fig.8 Intermodulation distortion as a function of collector current.

VCE= 10 V; Vo= 900 mV; Tamb= 25°C;

f(p+q−r)= 443.25 MHz.

handbook, halfpage

20 120

45

70 65

MBB292

60 55 50

40 60 80 100

I (mA)C d

(dB) im

Fig.9 Intermodulation distortion as a function of collector current.

VCE= 10 V; Vo= 850 mV; Tamb= 25°C;

f(p+q−r)= 793.25 MHz.

handbook, halfpage

20 120

45

70 65

MBB293

60 55 50

40 60 80 100

I (mA)C d

(dB) im

Fig.10 Second order intermodulation distortion as a function of collector current.

VCE= 10 V; Vo= 50 dBmV; Tamb= 25°C;

f(p+q)= 450 MHz.

handbook, halfpage

20 120

45

70 65

MBB291

60 55 50

40 60 80 100

d 2 (dB)

I (mA)C

Fig.11 Second order intermodulation distortion as a function of collector current.

VCE= 10 V; Vo= 50 dBmV; Tamb= 25°C f(p+q)= 810 MHz.

handbook, halfpage

20 120

45

70 65

MBB290

60 55 50

40 60 80 100

d 2 (dB)

I (mA)C

Fig.12 Load impedance as a function of output power.

VCE= 7.5 V; f = 900 MHz.

handbook, halfpage

0 0.25 1.0

–10 0 20

MEA951

0.50

POUT(W) 10

30

0.75 40

Z (Ω)L

50 60

R L

X L

Fig.13 Load impedance as a function of output power.

VCE= 10 V; f = 900 MHz.

handbook, halfpage

0 0.5

0 10 30

MEA952

1 POUT(W) 20

40

1.5 50

Z (Ω)L

R L

X L

Fig.14 Load impedance as a function of output power.

VCE= 12.5 V; f = 900 MHz.

handbook, halfpage

0 0.5

0 10 30

MEA953

1 P

OUT(W) 20

40

1.5 60

Z (Ω)L

R L

X L 50

Fig.15 Input impedance as a function of output power.

VCE= 7.5 V; f = 900 MHz.

handbook, halfpage

0 0.25 1.0

0 2 6

MEA948

0.50

POUT(W) 4

8

0.75 10

Z (Ω)i

r i x i

Fig.16 Input impedance as a function of output power.

VCE= 10 V; f = 900 MHz.

handbook, halfpage

0 1.5

0 2 6

MEA949

0.5

POUT(W) 4

8

1 10

Z (Ω)i

r i

x i

Fig.17 Input impedance as a function of output power.

VCE= 12.5 V; f = 900 MHz.

handbook, halfpage

0 1.5

0 2 6

MEA950

0.5

POUT(W) 4

8

1 10

Z (Ω)i

r i

x i

Fig.18 Efficiency as a function of output power.

f = 900 MHz.

handbook, halfpage

0 0.5 1.5

40 50 70

MEA947

1 η

(%)

POUT(W) V =

CE 12.5 V

60 80

7.5 V 10 V

Fig.19 Output power as a function of input power.

f = 900 MHz.

handbook, halfpage

0 100 300

1.5

0 0.5 1

MEA945

200 P OUT

(W)

PIN (mW) V =

CE 12.5 V

10 V

7.5 V

Fig.20 Power gain as a function of output power.

f = 900 MHz.

handbook, halfpage

0 0.5 1.5

10

0 2 6

MEA946

1 G p

(dB)

POUT(W) V =CE

12.5 V

10 V 7.5 V 4

8

Fig.21 Maximum unilateral power gain as a function of frequency.

IC= 100 mA; VCE= 10 V; Tamb= 25°C.

handbook, halfpage40

0 20 30

10

MBB289

10² 10³ 10⁴

10

f (MHz) G UM

(dB)

Fig.22 Common emitter input reflection coefficient (S₁₁).

IC= 100 mA; VCE= 10 V; Tamb= 25°C; Zo= 50Ω..

handbook, full pagewidth

10

25

50

100

250

10

25

50

100

250 0

+ j

– j

MBB288

∞

10 25 50 100 250

Fig.23 Common emitter forward transmission coefficient (S₂₁).

IC= 100 mA; VCE= 10 V; Tamb= 25°C.

handbook, full pagewidth

MBB286 0 o 30o 60o

90o 120o

150o

180 o

150o

120o

90o

60o

30o 40 30 20

50 10

Fig.24 Common emitter reverse transmission coefficient (S₁₂).

IC= 100 mA; VCE= 10 V; Tamb= 25°C.

handbook, full pagewidth

MBB285 0 o 30o 60o

90o 120o

150o

180 o

150o

120o

90o

60o

30o 0.2

0.1 0.3 0.4 0.5 0.6

Fig.25 Common emitter output reflection coefficient (S₂₂).

IC= 100 mA; VCE= 10 V; Tamb= 25°C; Zo= 50Ω..

handbook, full pagewidth

10

25

50

100

250

10

25

50

100

250 0

+ j

– j

MBB287

∞

10 25 50 100 250