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BYT12P-1000-2

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SGS-THOMSON

BYT 12P-1000

FAST RECOVERY RECTIFIER DIODE

■ VERY HIGH REVERSE VOLTAGE CAPA­

BILITY

■ VERY LOW REVERSE RECOVERY TIME

■ VERY LOW SWITHING LOSSES

■ LOW NOISE TURN-OFF SWITCHING

S U ITABLE A P P L IC A T IO N S

■ FREE WHEELING DIODE IN CONVERTERS AND MOTOR CONTROL CIRCUITS

■ RECTIFIER IN S.M.P.S.

Cathode connected to case

TO220AC (Plastic)

ABSOLUTE MAXIMUM RATINGS

Sym bol Param eter Value Unit

Vr r m Repetitive Peak Reverse Voltage 1000 V

Vr s m Non Repetitive Peak Reverse Voltage 1000 V

If r m Repetitive Peak Forward Current tp < 10ps 150 A

If(r m s) RMS Forward Current 25 A

If( A V) Average Forward Current Tease - 1 00°C

6 = 0.5

12 A

If s m Surge Non Repetitive Forward Current tp = 10ms

Sinusoidal

75 A

p Power Dissipation T case = 100°C 25 W

Tstg

T |

Storage and Junction Temperature Range - 4 0 to + 150 °C

THERM AL R E S IS TA N C E

S y m b o l P a r a m e te r V a lu e U n it

Rth (I-C ) Junction-case 2 °C/W

June 1989 1/5

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ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS

Sym bol Test C o n ditions Min. Typ. M ax. Unit

Ir Tj = 25°C Vr = Vr r m 50 h a

Tj = 100°C 2.5 m A

Vf T| = 25°C If= 12A 1.9 V

Tj = 100°C 1.8

RECOVERY CHARACTERISTICS

S y m b o l T e s t C o n d itio n s M in . T y p . M a x . U n it

t,r Tj = 25°C l F = 1A dip/dt = - 15A/ns VR = 30V 155 ns

If = 0.5A lR = 1A lrr=0.25A 65

TURN-OFF SWITCHING CHARACTERISTICS (Without Series Inductance)

S y m b o l T e s t C o n d itio n s M in . T y p . M a x . U n it

t|RM dip/dt = - 50A/ns VCc = 200V l F = 12A Lp < 0.05jiH Tj = 100°C See Figure 11

200 ns

di F/dt = - 100A/|xs 120

Ir m di F/dt = - 50A/ns 7.8 A

di F/dt = - 100A/HS 9

TURN-OFF OVERVOLTAGE COEFFICIENT (With Series Inductance)

Sym bol Te st C o n ditions Min. Typ. Max. Unit

Vcc

Tj = 100°C Voc = 200V lF = If<a v) diF/dt = - 12A/|j,s Lp = 12nH See Figure 12

4.5

To evaluate the conduction losses use the following equations : Vf = 1.47 + 0.026 If P = 1.47 x If(av) + 0.026 If2(rms)

SGS-THOMSON MOCIMilUEOTmWOCS 2/5

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P (H)

FIGURE 1 : Lo n frequency poNer losses

versus Bverage current. FIGURE 2 : Peak current versus fore factor.

FIGURE 3 : Non repetitive peek surge current versus overload duration.

FIGURE 4 : Thermal impedance versus pulse Hldtn.

j °rr tpO

90 X confidence T j - 100 °C

dip/d (A s)

FIGURE 5 : Voltage drop versus forNard

current. FIGURE B : Recovery charge verBus dip/dt.

r z 7 SCS-THOMSON

* 7 # MocmnuiciniMocs

3/5

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FI91WE 7 : Recovery tine versus dip/dt. FIGURE 8 : Peak reverse current versus dlF/dt.

0 100 200 300 400

FIGURE 9 : Peak forward voltage versus dlp/dt.

0 50 100 150

FIGURE 10 : Dynamic parameters versus Junction temperature.

Figure 11 : Turn-off switching characteristics (without series inductance).

4/5 T SGS-THOMSON

*■11 ffflcnoBuianmDnucs

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Figure 12 : Turn-off switching characteristics (with series inductance).

r z 7 SCS-THOMSON

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However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringementof patents or other rights of third

VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE :.. Insulating voltage = 2500