2N6836

(1)



These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications.

• Switching Regulators

• Inverters

• Motor Controls

• Deflection Circuits

• Fast Turn–Off Times

30 ns Inductive Fall Time — 75 _ C (Typ) 50 ns Inductive Crossover Time — 75 _ C (Typ) 600 ns Inductive Storage Time — 75 _ C (Typ)

• Operating Temperature Range – 65 to + 200 _ C

• 100 _ C Performance Specified for:

Reverse–Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages

Leakage Currents

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

Collector–Emitter Voltage

ÎÎÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎÎÎÎ

450

ÎÎÎÎ

Vdc

Collector–Emitter Voltage

ÎÎÎÎÎÎÎ

VCEV

ÎÎÎÎÎÎÎÎ

850

ÎÎÎÎ

Vdc

Emitter Base Voltage

ÎÎÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

6.0

ÎÎÎÎ

Vdc

Collector Current — Continuous

— Peak (1)

ÎÎÎÎÎÎÎ

IC ICM

ÎÎÎÎÎÎÎÎ

15 20

ÎÎÎÎ

Adc

Base Current — Continuous

— Peak (1)

ÎÎÎÎÎÎÎ

IB IBM

ÎÎÎÎÎÎÎÎ

10 15

ÎÎÎÎ

Adc

Total Power Dissipation @ TC = 25_ C

@ TC = 100_ C Derate above 25 _ C

ÎÎÎÎÎÎÎ

PD

ÎÎÎÎÎÎÎÎ

175 100 1.0

ÎÎÎÎ

Watts W/ _ C

Operating and Storage Junction Temperature Range

ÎÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

– 65 to + 200

ÎÎÎÎ

_ C

THERMAL CHARACTERISTICS (2)

Characteristic

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎÎ

R θJC

ÎÎÎÎÎÎÎÎ

1.0

ÎÎÎÎ

_ C/W

Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5.0 Seconds

ÎÎÎÎÎÎÎ

TL

ÎÎÎÎÎÎÎÎ

275

ÎÎÎÎ

_ C

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

(2) Indicate JEDEC Registered Data.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6836/D

15 AMPERE NPN SILICON POWER TRANSISTOR

450 VOLTS 175 WATTS

CASE 1–07 TO–204AA

(TO–3)

(2)

2N6836

ELECTRICAL CHARACTERISTICS _{(TC = 25_} C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

OFF CHARACTERISTICS (1)

Collector–Emitter Sustaining Voltage (Table 2) (IC = 100 mA, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

450*

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

Collector Cutoff Current

(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc)

(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc, TC = 100_ C)

ÎÎÎÎ

ICEV

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

0.25*

1.5*

ÎÎÎ

mAdc

Collector Cutoff Current

(VCE = 850 Vdc, RBE = 50 Ω, TC = 100_ C)

ÎÎÎÎ

ICER

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

mAdc

Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.0*

ÎÎÎ

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

ÎÎÎÎ

IS/b

ÎÎÎÎÎÎÎÎÎÎÎÎ

See Figure 15*

Clamped Inductive SOA with Base Reverse Biased

ÎÎÎÎ

RBSOA

ÎÎÎÎÎÎÎÎÎÎÎÎ

See Figure 16

ON CHARACTERISTICS (1)

Collector–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.7 Adc) (IC = 10 Adc, IB = 1.0 Adc)

(IC = 10 Adc, IB = 1.0 Adc, TC = 100_ C)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.2 2.5*

3.0*

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc)

(IC = 10 Adc, IB = 1.0 Adc, TC = 100_ C)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.5*

1.5

ÎÎÎ

Vdc

DC Current Gain

(IC = 10 Adc, VCE = 5.0 Vdc) (IC = 15 Adc, VCE = 5.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

8.0*

5.0

ÎÎÎÎ

—

ÎÎÎÎ

30*

—

ÎÎÎ

—

DYNAMIC CHARACTERISTICS (2)

Current Gain — Bandwidth Product

(VCE = 10 Vdc, IC = 0.25 Adc, ftest = 10 MHz)

ÎÎÎÎ

fT

ÎÎÎÎ

10*

ÎÎÎÎ

—

ÎÎÎÎ

75*

ÎÎÎ

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

50*

ÎÎÎÎ

—

ÎÎÎÎ

400*

ÎÎÎ

pF

SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

ÎÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎ

(IC = 10 Adc, VCC = 250 Vdc,

IB1 = 1.0 Adc, PW = 30 µs, Duty Cycle v 2.0%)

ÎÎÎÎÎÎÎÎ

(IB2 = 2.6 Adc, RB2 = 1.6 Ω)

ÎÎÎÎ

td

ÎÎÎÎ

—

ÎÎÎÎ

20

ÎÎÎÎ

100*

ÎÎÎ

ns

ÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎ

(IC = 10 Adc, VCC = 250 Vdc, IB1 = 1.0 Adc, PW = 30 µs, Duty Cycle v 2.0%)

ÎÎÎÎÎÎÎÎ

(IB2 = 2.6 Adc, RB2 = 1.6 Ω)

ÎÎÎÎ

tr

ÎÎÎÎ

—

ÎÎÎÎ

200

ÎÎÎÎ

500*

ÎÎÎ

ÎÎÎ ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎ

(IC = 10 Adc, VCC = 250 Vdc, IB1 = 1.0 Adc, PW = 30 µs, Duty Cycle v 2.0%)

ÎÎÎÎÎÎÎÎ

(IB2 = 2.6 Adc, RB2 = 1.6 Ω)

ÎÎÎÎ

ts

ÎÎÎÎ

—

ÎÎÎÎ

1200

ÎÎÎÎ

3000*

ÎÎÎ

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎ

IB1 = 1.0 Adc, PW = 30 µs, Duty Cycle v 2.0%)

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

tf

ÎÎÎÎ

—

ÎÎÎÎ

200

ÎÎÎÎ

250*

ÎÎÎ

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎ

Duty Cycle v 2.0%)

ÎÎÎÎÎÎÎÎ

(VBE(off) = 5.0 Vdc)

ÎÎÎÎ

ts

ÎÎÎÎ

—

ÎÎÎÎ

650

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎ

v 2.0%)

ÎÎÎÎÎÎÎÎ

(VBE(off) = 5.0 Vdc)

ÎÎÎÎ

tf

ÎÎÎÎ

—

ÎÎÎÎ

80

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Inductive Load (Table 2)

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎ

(IC = 10 Adc, IB1 = 1.0 Adc, VBE(off) = 5.0 Vdc, VCE(pk) = 400 Vdc)

ÎÎÎÎÎÎÎÎ

(TC = 100_ C)

ÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎÎ

800

ÎÎÎÎ

1500*

ÎÎÎ

ns

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎ

(IC = 10 Adc, IB1 = 1.0 Adc, VBE(off) = 5.0 Vdc, VCE(pk) = 400 Vdc)

ÎÎÎÎÎÎÎÎ

(TC = 100_ C)

ÎÎÎÎ

tfi

ÎÎÎÎ

—

ÎÎÎÎ

50

ÎÎÎÎ

150*

ÎÎÎ

ÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎ

(IC = 10 Adc, IB1 = 1.0 Adc, VBE(off) = 5.0 Vdc, VCE(pk) = 400 Vdc)

ÎÎÎÎÎÎÎÎ

_ C)

ÎÎÎÎ

tc

ÎÎÎÎ

—

ÎÎÎÎ

90

ÎÎÎÎ

200*

ÎÎÎ

ÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎ

IB1 = 1.0 Adc, VBE(off) = 5.0 Vdc, VCE(pk) = 400 Vdc)

ÎÎÎÎÎÎÎÎ

(TC = 150_ C)

ÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎÎ

1050

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎ

VCE(pk) = 400 Vdc)

ÎÎÎÎÎÎÎÎ

(TC = 150_ C)

ÎÎÎÎ

tfi

ÎÎÎÎ

—

ÎÎÎÎ

70

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

_ C)

ÎÎÎÎ

tc

ÎÎÎÎ

—

ÎÎÎÎ

120

ÎÎÎÎ

—

ÎÎÎ

(1) Pulse Test: PW ± 300 µs, Duty Cycle v 2%.

(2) fT = |she| ftest.

* Indicates JEDEC Registered Limit.

(3)

2N6836 TYPICAL STATIC CHARACTERISTICS

V CE , COLLECT OR–EMITTER VOL TAGE (VOL TS)

Figure 1. DC Current Gain IC, COLLECTOR CURRENT (AMPS)

3.0 0.2 0.5 1.0 10 20

10

5.0 Figure 2. Collector Saturation Region 2.0

0.02 IB, BASE CURRENT (AMPS)

0.1 0.05 0.1 0.2 0.5 5.0 10

0.7 0.5

0.3 0.2 IC = 1 A

TC = 25° C 10 A

50

20 h FE , DC CURRENT GAIN

TC = 100 °C 25 ° C

VCE = 5.0 V

5.0 2.0

5 A 1.0

1.0 15 A

2.0 V BE , BASE–EMITTER VOL TAGE (VOL TS) V CE , COLLECT OR–EMITTER VOL TAGE (VOL TS)

Figure 3. Collector–Emitter Saturation Voltage 5.0

0.15 IC, COLLECTOR CURRENT (AMPS)

0.05 0.2 0.5 1.0 3.0 5.0 15

2.0 1.0 0.50

0.20 βf = 5 TJ = 25° C 3.0

0.10 βf = 10 TJ = 100° C βf = 10

TJ = 25° C

1.5

0.15 IC, COLLECTOR CURRENT (AMPS)

0.20 0.50 1.0 3.0 5.0 15

1.0 0.70

0.40 0.30

0.15 Figure 4. Base–Emitter Voltage 0.50

0.70

0.30

0.07 0.3 0.7 2.0 7.0 10

0.20 100°C 75°C

TC = 25° C βf = 10

0.30 0.70 2.0 7.0 10

104 – 0.4

Figure 5. Collector Cutoff Region VBE, BASE–EMITTER VOLTAGE (VOLTS) 103

101

100 10–1

, COLLECT OR CURRENT ( A) µ

I C

– 0.2 0 + 0.2 + 0.4 + 0.6

VCE = 250 V TJ = 150° C

100 ° C

25 ° C

REVERSE FORWARD

102 125°C

75 ° C

10000

0.1 Figure 6. Capacitance VR, REVERSE VOLTAGE (VOLTS)

10 1.0 100 850

C, CAP ACIT ANCE (pF)

2000

100 Cob Cib 5000

3000

1000

200 300 500

20 50

10 TC = 25 °C

(4)

TYPICAL DYNAMIC CHARACTERISTICS

5000

1.5 Figure 7. Storage Time IC, COLLECTOR CURRENT (AMPS)

0.05 3.0 5.0 7.0 10 15

500 3000

t sv

, ST ORAGE TIME (ns)

β f = 5 TC = 75 °C VCC = 20 VOLTS VBE(off) = 0 VOLTS

VBE(off) = 2.0 VOLTS

VBE(off) = 5.0 VOLTS

Figure 8. Storage Time IC, COLLECTOR CURRENT (AMPS) t sv

, ST ORAGE TIME (ns)

200 1000 2000

100 300

0.07 2.0

VBE(off) = 0 VOLTS

VBE(off) = 2.0 VOLTS

VBE(off) = 5.0 VOLTS

βf = 10 TC = 75° C VCC = 20 VOLTS 5000

0.05 500 3000

200 1000 2000

100 300 700

1.5 2.0 3.0 5.0 7.0 10 15

1000

1.5 Figure 9. Collector Current Fall Time IC, COLLECTOR CURRENT (AMPS)

10 2.0 3.0 5.0 10 15

50 500

, COLLECT OR CURRENT F ALL TIME (ns) t fi 20 100 200

1000

Figure 10. Collector Current Fall Time IC, COLLECTOR CURRENT (AMPS) 10

50 500

t fi , COLLECT OR CURRENT F ALL TIME (ns) 20 100 200

β f = 5 TC = 75 °C VCC = 20 VOLTS

VBE(off) = 0 VOLTS

VBE(off) = 2.0 VOLTS

VBE(off) = 5.0 VOLTS 300

7.0 VBE(off) = 0 VOLTS

VBE(off) = 2.0 VOLTS

VBE(off) = 5.0 VOLTS β f = 10

TC = 75 °C VCC = 20 VOLTS 300

1.5 2.0 3.0 5.0 7.0 10 15

1500

Figure 11. Crossover Time IC, COLLECTOR CURRENT (AMPS) 15

50 500

t c , CROSSOVER TIME (ns)

20 100 300

Figure 12. Crossover Time IC, COLLECTOR CURRENT (AMPS)

t c , CROSSOVER TIME (ns)

1000

200 β f = 5 TC = 75 °C VCC = 20 VOLTS

VBE(off) = 0 VOLTS VBE(off) = 2.0 VOLTS

VBE(off) = 5.0 VOLTS

1.5 2.0 3.0 5.0 7.0 10 15

VBE(off) = 0 VOLTS

VBE(off) = 2.0 VOLTS

VBE(off) = 5.0 VOLTS βf = 10

TC = 75° C VCC = 20 VOLTS

1.5 2.0 3.0 5.0 7.0 10 15

1500

15 50 500

20 100 300 1000

200

(5)

2N6836

Figure 13. Inductive Switching Measurements TIME

Figure 14. Peak Reverse Base Current I B2

, REVERSE BASE CURRENT (AMPS)

10

0 VBE(off), REVERSE BASE VOLTAGE (VOLTS)

0 3.0 4.0

9 8 7

1 IB1 = 2.0 AMPS

IC = 10 AMPS TC = 25 °C

1.0 2.0 5.0

6 5 4 3 2

IB1 = 1.0 AMPS 90% VCE(pk)

IC

90% IC(pk)

IC pk VCE(pk)

tc

90% IB1 VCE

IB 10% VCE(pk) 2% IC

tsv trv tfi tti

10%

IC pk

GUARANTEED SAFE OPERATING AREA LIMITS

20

5.0 Figure 15. Maximum Forward Bias Safe Operating Area VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 5.0

2.0 1.0 0.50

0.02 10 20 30 50 450

0.10 I C 0.05

, COLLECT OR CURRENT (AMPS)

TC = 25 °C dc

1 ms

70 100 200 300 BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

10 µs 10

20

100 Figure 16. Maximum Reverse Bias Safe Operating Area

VCE, PEAK COLLECTOR–EMITTER VOLTAGE (VOLTS) 14

10 0 150 200 250 350 850

6.0 I C(pk) 2.0

, PEAK COLLECT OR CURRENT (AMPS)

Bf w 4 TC v 100 ° C

450 600 700 18

VBE(off) = 0 V

VBE(off) = 1 to 5 V

SAFE OPERATING AREA INFORMATION FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second break- down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa- tion than the curves indicate.

The data of Figure 15 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC w 25 _ C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 15 may be found at any case temperature by using the appropriate curve on Figure 18.

TJ(pk) may be calculated from the data in Figure 17. At high case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations im- posed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base–to–emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping, RC

snubbing, load line shaping, etc. The safe level for these de-

vices is specified as Reverse Bias Safe Operating Area and

represents the voltage–current condition allowable during re-

verse biased turn–off. This rating is verified under clamped

conditions so that the device is never subjected to an ava-

lanche mode. Figure 16 gives the RBSOA characteristics.

(6)

Figure 17. Thermal Response t, TIME (ms)

1.0 0.01 0.1

0.01 0.1 1.0 10 100 1 k

r(t), TRANSIENT THERMAL RESIST ANCE (NORMALIZED)

R θJC(t) = r(t) RθJC R θJC = 1.0 °C/W TJ(pk) – TC = P(pk) Rθ JC(t)

100

80

60

40 0 20

0 40 80 120 200

Figure 18. Power Derating TC, CASE TEMPERATURE ( °C)

POWER DERA TING F ACT OR (%)

THERMAL DERATING

SECOND BREAKDOWN DERATING

160 Table 1. Resistive Load Switching

H.P. 214 OR EQUIV.

P.G. IB IC

td and tr ts and tf

RL 50

TUT

VCC RB = 10

Vin 0 V

[ 11 V

tr v 15 ns

VCC = 250 Vdc RL = 25 Ω IC = 10 Adc IB = 1.0 Adc

0 V

[ – 35 V

+ Vdc [ 11 Vdc

20

100 2N6191

50

500 10 µ F 0.02 µF

1.0 µF

RB1 A RB2 100

– V 0 V

+ V

– 5 V A

*Tektronix P–6042 or equivalent.

VCC = 250 IB1 = 1.0 Adc RB1 = 10 Ω RL = 25 Ω IB2 = 2.6 Adc RB2 = 1.6 Ω IC = 10 Adc For VBE(off) = 5.0 V RB2 = 0 Ω H.P. 214

OR EQUIV.

P.G.

2N5337 0.02 µF

+ –

IB IC RL

50 TUT

VCC

(7)

2N6836 Table 2. Inductive Load Switching

V(BR)CEO Inductive Switching RBSOA

L = 10 mH L = 200 µ H L = 200 µ H

RB2 = R RB2 = 0 RB2 = 0

VCC = 20 Volts VCC = 20 Volts VCC = 20 Volts

RB1 selected for desired IB1 RB1 selected for desired IB1

*Tektronix Scope — Tektronix

*P–6042 or 7403 or

*Equivalent Equivalent Note: Adjust – V to obtain desired VBE(off) at Point A.

T1

T1 [ Lcoil (ICpk)

T1 adjusted to obtain IC(pk) VCC

0 V

≈ – 35 V

+ V [ 11 V

20

100 2N6191

50 500 10 µ F

1.0 µF

RB1 A RB2 100

– V

0 V

+ V

– V A

H.P. 214 OR EQUIV.

P.G.

2N5337 0.02 µF

+ –

50 *IB

T.U.T.

VCC 0.02 µF

*IC

IB IC

IC(pk)

VCE(pk)

IB1

IB2 VCE

Vclamp + –

L

VCE(pk) = VCE(clamp) MR856

TYPICAL INDUCTIVE SWITCHING WAVEFORMS

IC(pk) = 10 Amps IB1 = 1.0 Amp VBE(off) = 5.0 Volts VCE(pk) = 400 Volts TC = 25° C

Time Base = 20 ns/cm

tsv tfi, tc

IC(pk) = 10 Amps IB1 = 1.0 Amp VBE(off) = 5.0 Volts VCE(pk) = 400 Volts TC = 25° C

Time Base = 100 ns/cm

VCE(pk)

0 I B1

I B2 VCE(sat)

tsv= 370 ns

IC(pk) tfi = 20 ns

VCE(pk)

VCE(sat) 24 ns tc

(8)

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE 2. EMITTER CASE: COLLECTOR

DIM MIN MAX MIN MAX MILLIMETERS INCHES

A 1.550 REF 39.37 REF

B ––– 1.050 ––– 26.67

C 0.250 0.335 6.35 8.51 D 0.038 0.043 0.97 1.09 E 0.055 0.070 1.40 1.77 G 0.430 BSC 10.92 BSC

H 0.215 BSC 5.46 BSC

K 0.440 0.480 11.18 12.19 L 0.665 BSC 16.89 BSC

N ––– 0.830 ––– 21.08

Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77

A N

E

C

K

–T– ^SEATING

PLANE

D 2 PL

Q M

0.13 (0.005) M T Y ^M

Y M

0.13 (0.005) M T –Q–

–Y–

2

1 U L

G B

V

H

CASE 1–07 TO–204AA (TO–3)

ISSUE Z

How to reach us:

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2N6836

     

  

  

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications.

• Switching Regulators

• Inverters

• Motor Controls

• Deflection Circuits

• Fast Turn–Off Times

30 ns Inductive Fall Time — 75 _ C (Typ) 50 ns Inductive Crossover Time — 75 _ C (Typ) 600 ns Inductive Storage Time — 75 _ C (Typ)

• Operating Temperature Range – 65 to + 200 _ C

• 100 _ C Performance Specified for:

Reverse–Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages

Leakage Currents

MAXIMUM RATINGS (2)

Rating

Symbol

Max

Unit

Collector–Emitter Voltage

VCEO(sus)

450

Vdc

Collector–Emitter Voltage

VCEV

850

Vdc

Emitter Base Voltage

VEB

6.0

Vdc

Collector Current — Continuous

— Peak (1)

IC ICM

15 20

Adc

Base Current — Continuous

— Peak (1)

IB IBM

10 15

Adc

Total Power Dissipation @ TC = 25_ C

@ TC = 100_ C Derate above 25 _ C

PD

175 100 1.0

Watts W/ _ C

Operating and Storage Junction Temperature Range

TJ, Tstg

– 65 to + 200

_ C

THERMAL CHARACTERISTICS (2)

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R θJC

1.0

_ C/W

Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5.0 Seconds

TL

275

_ C

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

(2) Indicate JEDEC Registered Data.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

  

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6836/D



15 AMPERE NPN SILICON POWER TRANSISTOR

450 VOLTS 175 WATTS

CASE 1–07 TO–204AA

(TO–3)

2N6836

ELECTRICAL CHARACTERISTICS (TC = 25_ C unless otherwise noted)

Characteristic

Symbol



ELECTRICAL CHARACTERISTICS _{(TC = 25_} C unless otherwise noted)