rz 7 S G S-TU O M SO N
^ 7 # M e M i L i a r f M o c s B C 3 9 4
H IG H V O L T A G E A M P L IF IE R
DESCRIPTION
The BC394 is a silicon planar epitaxial NPN trans
istor in Jedec TO-18 metal case, designed for ge
neral purpose high-voltage and video amplifier ap
plications.
The complementary PNP type is the BC393.
INT ERNAL SCH EMATIC DIAGRAM
ABSOLU TE MAXIM UM RATINGS
S y m b o l P a r a m e t e r V a l u e Unit
VcBO Collector-base Voltage ( Ie = 0) 180 V
VcEO Collector-emitter Voltage (Ib = 0 ) 180 V
Vebo Emitter-base Voltage (lc = 0 ) 6 V
lc Collector Current 100 mA
P t o t Total Power Dissipation at T amb < 25 “C 0.4 w
3t Tease — 25 °C 1.4 W
T s t g Storage Temperature - 55 to 200
°c
T,
Junction Temperature 200°c
January 1989 1/3
BC394
T HERMAL DATA
R t h j- c a s e Thermal Resistance Junction-case M ax 125
°c/w
R t h j- a m b Thermal Resistance Junction-ambient M ax 440
c w
ELE CTRICAL CHARACTERISTICS (Tamb = 25 =C unless otherwise specified)
S ym bo l P a r a m e t e r T e s t C o n d it io n s Min. Typ. Max. Unit
Ic B O Collector Cutoff Current
( Ie = 0) VCB = 1 0 0 V
VcB = 1 00 V T a m b = 1 50 °C
50 50 p3 >>
V (B R ) CBO Collector-base Breakdown
Voltage (Ie = 0) l c = 1 0 0 pA 180 V
V (B R ) CEO* Collector-emitter Breakdown
Voltage (la = 0) lc = 10 mA 180 V
V (B R ) EBO Emitter-base Breakdown
Voltage ( lc = 0) l E = 1 0 0 liA 6 V
VcE ( s a t ) ' Collector-emitter Saturation
Voltage l c = 10 mA B = 1 mA
l c = 50 mA l B = 5 mA
200 400
300 mV
mV
Vb e ( s a t ) • Base-emitter Saturation
Voltage
oo IIII cn-*■ oo 33 >> CD CD IIII cn-»■ 33 >> 750
850
900 mV
mV h F E * DC Curent Gain
oo it ii
I 1
<<oo II11 o o <<30 85 100
f l Transition frequency lc = 10 mA V Ce = 10 V 50 95 MHz
CcBO Collector-base
Capacitance l E = 0 V CB = 10 V
f = 1 MHz 5 pF
* Pulsed : pulse duration = 300 ps, duty cycle = 1 %.
DC Current. Collector-emitter Saturation Voltage.
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* t 7
SCS-THOMSON [MQiG[B«SCTiMi]©8BC394
3ase-emitter Saturation Voltage. Transition Frequency.
SGS-THOMSON SSIC 2 S L S C T T K
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