TIC106 SERIESSILICON CONTROLLED RECTIFIERS

●

5 A Continuous On-State Current

●

30 A Surge-Current

●

Glass Passivated Wafer

●

400 V to 800 V Off-State Voltage

●

Max I

of 200 µA

K A G

TO-220 PACKAGE (TOP VIEW)

Pin 2 is in electrical contact with the mounting base.

MDC1ACA 1

2 3

absolute maximum ratings over operating case temperature (unless otherwise noted)

NOTES: 1. These values apply when the gate-cathode resistance R_GK = 1 kΩ.

2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.

3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate linearly to zero at 110°C.

4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.

5. This value applies for a maximum averaging time of 20 ms.

RATING SYMBOL VALUE UNIT

Repetitive peak off-state voltage (see Note 1)

TIC106D TIC106M TIC106S TIC106N

V_DRM

400 600 700 800

V

Repetitive peak reverse voltage

TIC106D TIC106M TIC106S TIC106N

V_RRM

400 600 700 800

V

Continuous on-state current at (or below) 80°C case temperature (see Note 2) I_T(RMS) 5 A Average on-state current (180° conduction angle) at (or below) 80°C case temperature

(see Note 3) I_T(AV) 3.2 A

Surge on-state current (see Note 4) I_TM 30 A

Peak positive gate current (pulse width ≤ 300 µs) I_GM 0.2 A

Peak gate power dissipation (pulse width ≤ 300 µs) P_GM 1.3 W

Average gate power dissipation (see Note 5) P_G(AV) 0.3 W

Operating case temperature range T_C -40 to +110 °C

Storage temperature range T_stg -40 to +125 °C

Lead temperature 1.6 mm from case for 10 seconds T_L 230 °C

NOTE 6: This parameter must be measured using pulse techniques, t_p = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body.

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

I_DRM Repetitive peak

off-state current V_D = rated V_DRM R_GK = 1 kΩ T_C = 110°C 400 µA

I_RRM Repetitive peak

reverse current V_R= rated V_RRM I_G = 0 T_C = 110°C 1 mA

I_GT Gate trigger current V_AA = 6 V R_L= 100Ω t_p(g) ≥ 20 µs 60 200 µA

V_GT Gate trigger voltage

V_AA = 6 V t_p(g) ≥ 20 µs

R_L= 100Ω R_GK= 1 kΩ

T_C = - 40°C

1.2

V_AA = 6 V V t_p(g) ≥ 20 µs

R_L= 100Ω

R_GK= 1 kΩ 0.4 0.6 1

V_AA = 6 V t_p(g) ≥ 20 µs

R_L= 100Ω R_GK= 1 kΩ

T_C = 110°C

0.2

I_H Holding current

V_AA = 6 V

Initiating I_T = 10 mA

R_GK= 1 kΩ T_C = - 40°C

8 V_AA = 6 V mA

Initiating I_T = 10 mA

R_GK= 1 kΩ

5

V_TM Peak on-state

voltage I_TM= 5 A (See Note 6) 1.7 V

dv/dt Critical rate of rise of

off-state voltage V_D = rated V_D R_GK= 1 kΩ T_C = 110°C 10 V/µs

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R_θJC Junction to case thermal resistance 3.5 °C/W

R_θJA Junction to free air thermal resistance 62.5 °C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

t_gt Gate-controlled

turn-on time I_T = 5 A I_G = 10 mA See Figure 1 1.75 µs

t_q Circuit-commutated turn-off time

I_T = 5 A I_RM = 8 A

I_G = 10 mA See Figure 2

7.7 µs

PARAMETER MEASUREMENT INFORMATION

Figure 1. Gate-controlled turn-on time

Figure 2. Circuit-commutated turn-off time

G

R_G

V_A 30 V

I_T

V_G

IG

DUT 6 ΩΩ

V_A V_G

10%

90%

t_gt

PMC1AA

G1

R_G

V_A 30 V

I_A 6 ΩΩ

V_G1

I_G

DUT

G2 R_G

V_G2 TH1

R2

R1 0.1 µµF

to 0.5 µµF

G2 t_P Synchronisation I_G V_K

(I_RM Monitor) 0.1 ΩΩ

NOTES: A. Resistor R1 is adjusted for the specified value of I_RM.

B. Resistor R2 value is 30/I_H, where I_H is the holding current value of thyristor TH1.

C. Thyristor TH1 is the same device type as the DUT.

D. Pulse Generators, G1 and G2, are synchronised to produce an on-state anode current waveform with the following characteristics:

t_P = 50 µs to 300 µs duty cycle = 1%

E. Pulse Generators, G1 and G2, have output pulse amplitude, V_G, of ≥ 20 V and duration of 10 µs to 20 µs.

V_G1

V_G2

I_A

V_A

I_T

I_RM

t_q V_T

0 0 tP

PMC1AB

TYPICAL CHARACTERISTICS

Figure 3. Figure 4.

Figure 5. Figure 6.

AVERAGE ANODE ON-STATE CURRENT

T_C - Case Temperature - °C

30 40 50 60 70 80 90 100 110

IT(AV) - Maximum Average Anode Forward Current - A 0 1 2 3 4 5

6 ^TI20AA

DERATING CURVE

Φ Φ = 180º Continuous DC

Conduction Angle

Φ 0° Φ 180°

MAX CONTINUOUS ANODE POWER DISSIPATED

I_T - Continuous On-State Current - A

1 10 100

PA - Max Continuous Anode Power Dissipated - W 1 10

100 ^TI20AB

CONTINUOUS ON-STATE CURRENT vs

T_J = 110°C

SURGE ON-STATE CURRENT

Consecutive 50 Hz Half-Sine-Wave Cycles

1 10 100

ITM - Peak Half-Sine-Wave Current - A

1 10

100 ^TI20AC

CYCLES OF CURRENT DURATION vs

T_C ≤≤ 80 °C

No Prior Device Conduction Gate Control Guaranteed

TRANSIENT THERMAL RESISTANCE

Consecutive 50 Hz Half-Sine-Wave Cycles

1 10 100

RθθJC(t) - Transient Thermal Resistance - °C/W 0·1

1

10 ^TI20AD

CYCLES OF CURRENT DURATION

vs

TYPICAL CHARACTERISTICS

Figure 7. Figure 8.

Figure 9. Figure 10.

GATE TRIGGER CURRENT

T_C - Case Temperature - °C

-50 -25 0 25 50 75 100 125

IGT - Gate Trigger Current - µA

10 100

TC20AA

CASE TEMPERATURE vs

V_AA = 6 V R_L = 100 ΩΩ t_p(g) ≥≥ 20 µs

GATE TRIGGER VOLTAGE

T_C - Case Temperature - °C

-50 -25 0 25 50 75 100 125

VGT - Gate Trigger Voltage - V 0·2 0·4 0·6 0·8

0

1 ^TC20AB

CASE TEMPERATURE vs

V_AA = 6 V R_L = 100 ΩΩ R_GK = 1 kΩΩ t_p(g) ≥≥ 20 µs

GATE FORWARD VOLTAGE

I_GF - Gate Forward Current - mA

0·1 1 10 100 1000

VGF - Gate Forward Voltage - V

0·1 1

10 ^TC20AC

GATE FORWARD CURRENT vs

I_A = 0 T_C = 25 °C t_p = 300 µs Duty Cycle ≤≤ 2 %

HOLDING CURRENT

T_C - Case Temperature - °C

-50 -25 0 25 50 75 100 125

IH - Holding Current - mA

1

10 ^TC20AD

CASE TEMPERATURE vs

V_AA = 6 V R_GK = 1 kΩΩ

Initiating I_T = 10 mA

TYPICAL CHARACTERISTICS

Figure 11. Figure 12.

Figure 13.

PEAK ON-STATE VOLTAGE

I_TM - Peak On-State Current - A

0·1 1 10

VTM - Peak On-State Voltage - V

0.0 0.5 1.0 1.5 2.0

2.5 ^TC20AE

vs

PEAK ON-STATE CURRENT

T_C = 25 °C t_p = 300 µs Duty Cycle ≤≤ 2 %

GATE-CONTROLLED TURN-ON TIME

I_G - Gate Current - mA

0·1 1 10

tgt - Gate-Controlled Turn-On Time - µs

0.0 2.0 4.0 6.0 8.0

10.0 ^TC20AF

vs

GATE CURRENT

V_AA = 30 V R_L = 6 ΩΩ T_C = 25 °C

See Test Circuit and Waveforms

CIRCUIT-COMMUTATED TURN-OFF TIME

T_C - Case Temperature - °C

20 40 60 80 100 120

tq - Circuit-Commutated Turn-Off Time - µs 0 2 4 6 8 10 12 14

16 ^TC20AG

CASE TEMPERATURE vs

V_AA = 30 V R_L = 6 ΩΩ I_RM ≈≈ 8 A

See Test Circuit and Waveforms

TO-220

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.

MECHANICAL DATA

TO220

ALL LINEAR DIMENSIONS IN MILLIMETERS

ø

1,32 4,20 4,70

1 2 3

0,97 0,61 see Note C see Note B

10,0 10,4

2,54 2,95

6,0 6,6

14,55 15,90

12,7 14,1 3,5

6,1

1,07 1,70

2,34 2,74

4,88 5,28 3,71

3,96

0,41 0,64

2,40 2,90

VERSION 2 VERSION 1

NOTES: A. The centre pin is in electrical contact with the mounting tab.

B. Mounting tab corner profile according to package version.

C. Typical fixing hole centre stand off height according to package version.

Version 1, 18.0 mm. Version 2, 17.6 mm.

MDXXBE

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements.

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Copyright © 1997, Power Innovations Limited