© 1999 IXYS All rights reserved 1 - 3
Phase Control Thyristors VRRM = 800-1400 V I
T(RMS) = 120 A
I
T(AV)M= 69 A
VRSM VRRM Type
VDSM VDRM
V V
900 800 CS 35-08io4
1300 1200 CS 35-12io4
1500 1400 CS 35-14io4
Symbol Test Conditions Maximum Ratings
IT(RMS) TVJ = TVJM 120 A
IT(AV)M Tcase= 85°C; 180° sine 63 A
Tcase= 80°C; 180° sine 69 A
ITSM TVJ = 45°C; t = 10 ms (50 Hz), sine 1200 A
VR = 0 t = 8.3 ms (60 Hz), sine 1340 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1100 A
VR = 0 t = 8.3 ms (60 Hz), sine 1250 A
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 7200 A2s VR = 0 t = 8.3 ms (60 Hz), sine 7550 A2s TVJ = TVJM t = 10 ms (50 Hz), sine 6050 A2s VR = 0 t = 8.3 ms (60 Hz), sine 6500 A2s (di/dt)cr TVJ = TVJM repetitive, IT = 150 A 150 A/µs
f = 50Hz, tP =200µs VD = 2/3 VDRM
IG = 0.5 A non repetitive, IT = IT(AV)M 400 A/µs diG/dt = 0.5 A/µs
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/µs RGK = ∞; method 1 (linear voltage rise)
PGM TVJ = TVJM tP= 30 µs 10 W
IT = IT(AV)M tP = 500 µs 5 W
PG(AV) 0.5 W
VRGM 10 V
TVJ -40...+125 °C
TVJM 125 °C
Tstg -40...+125 °C
Md Mounting torque 2.5 Nm
22 lb.in.
Weight 20 g
Features
● Thyristor for line frequencies
● International standard package JEDEC TO-208AC
● Planar glassivated chip
● Long-term stability of blocking currents and voltages
Applications
● Motor control
● Power converter
● AC power controller Advantages
● Space and weight savings
● Simple mounting
● Improved temperature and power cycling
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
CS 35
1 2
3
TO-208AC (TO-65)
1 = Anode, 2 = Cathode, 3 = Gate
¼"-28 UNF-2 A 2
3
1
© 1999 IXYS All rights reserved 2 - 3
Symbol Test Conditions Characteristic Values
IR, ID TVJ = TVJM; VR = VRRM; VD = VDRM ≤ 10 mA
VT IT = 150 A; TVJ = 25°C ≤ 1.5 V
VT0 For power-loss calculations only (TVJ = 125°C) 0.85 V
rT 3.5 mΩ
VGT VD = 6 V; TVJ = 25°C ≤ 1.5 V
TVJ = -40°C ≤ 1.9 V
IGT VD = 6 V; TVJ = 25°C ≤ 100 mA
TVJ = -40°C ≤ 200 mA
VGD TVJ = TVJM; VD = 2/3 VDRM ≤ 0.2 V
IGD ≤ 1 mA
IL TVJ = 25°C; tP = 30 µs ≤ 100 mA
IG = 0.1 A; diG/dt = 0.1 A/µs
IH TVJ = 25°C; VD = 6 V; RGK = ∞ ≤ 80 mA
tgd TVJ = 25°C; VD = 1/2 VDRM ≤ 2 µs
IG = 0.1 A; diG/dt = 0.1 A/µs
tq TVJ = TVJM; IT = 50 A, tP = 200 µs; di/dt = -10 A/µs typ. 100 µs VR = 100 V; dv/dt = 10 V/µs; VD = 2/3 VDRM
RthJC DC current 0.4 K/W
RthJH DC current 0.6 K/W
dS Creepage distance on surface 1.7 mm
dA Strike distance through air 1.7 mm
a Max. acceleration, 50 Hz 50 m/s2
CS 35
0 1 2 3 4
0 100 200 300 400 500
100 101 102 103 104 0.2
0.4 0.6 0.8 2 4 6 8
0.1 1 10
IT VG
IG VT
A
mA V
V
Fig. 1 Gate trigger range Triggering:
A = no; B = possible, C = safe
Fig. 2 On-state characteristics TVJ= 25°C
TVJ= 125°C
2 4 6 8 IGD: TVJ= 25°C
IGD: TVJ=125°C
A
B I
GD: TVJ= -40°C IGD: TVJ= 0°C IGD: TVJ= 25°C
23 1
1: PG(AV)= 0.5 W 2: PGM= 5 W; tG = 500 µs 3: PGM= 10 W; tG = 30 µs
C
typ. lim.
© 1999 IXYS All rights reserved 3 - 3
0 50 100 150
0 50 100 150
2 3 4 5 6 7 8 9
1 10
103 104
10-3 10-2 10-1 100 101 0
200 400 600 800 1000 1200
0 20 40 60 80 100 120 140
0 50 100 150 200
50 100 150
0
10-3 10-2 10-1 100 101 102
0.0 0.2 0.4 0.6 0.8
I2t ITSM
A
t t Tc
PT W
IT(AV)M A
Tamb
t s ZthJH
K/W
A A2s
s
°C
ms °C
2 4
6 IT(AV)M
30°
60°
120°
180°
DC
CS 35
Fig. 3 Surge overload current ITSM: crest value, t: duration
Fig. 4 I2t versus time (1-10 ms)
Fig. 6 Power dissipation versus on-state current and ambient temperature
Fig. 5 Maximum forward current at case temperature
Fig. 7 Transient thermal impedance junction to heatsink
RthJH for various conduction angles d:
d RthJH (K/W)
DC 0.6
180° 0.65
120° 0.677
60° 0.725
30° 0.775
Constants for ZthJH calculation:
i Rthi (K/W) ti (s)
1 0.01 0.001
2 0.09 0.013
3 0.30 0.3
4 0.20 0.9
50Hz, 80%VRRM TVJ = 45°C TVJ = 125°C
VR = 0 V
TVJ = 45°C
TVJ = 125°C
DC 180° sin 120°
60°
30°
DC 180° sin 120°
60°
30°
RthJA : 0.9 K/W 1.3 K/W 1.6 K/W 3.3 K/W
ase
